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    • 2. 发明授权
    • Method and apparatus for fabricating encapsulated micro-channels in a substrate
    • 用于在衬底中制造封装的微通道的方法和装置
    • US06610605B2
    • 2003-08-26
    • US09895128
    • 2001-06-28
    • Jeremy A. RowlettePaul Winer
    • Jeremy A. RowlettePaul Winer
    • H01L21311
    • H01L33/00B81C1/00071H01L21/311H01L31/0328
    • A method for fabricating encapsulated micro-channels in a substrate is described. The method includes the formation of a thin film layer over an area of a substrate. Following the formation of the thin layer, a periodic array of access holes are formed within the thin film layer along dimensions of one or more desired micro-channels. Following formation of the access holes, the one or more micro-channels are formed, via the access holes, within an underlying layer of the substrate. Finally, the one or more micro-channels are encapsulated, thereby closing the one or more access holes along the dimensions of the desired micro-channels. Accordingly, the method is suitable in one context for rapid prototyping of micro-electromechanical systems in the areas of, for example, RF micro-systems, fluidic micro-systems and bio-fluidic applications. In addition, the method enables the rapid prototyping of integrated circuits.
    • 描述了在衬底中制造封装的微通道的方法。 该方法包括在衬底的区域上形成薄膜层。 在形成薄层之后,沿着一个或多个所需微通道的尺寸在薄膜层内形成周期性的存取孔阵列。 在形成接入孔之后,通过接入孔在衬底的下层内形成一个或多个微通道。 最后,一个或多个微通道被封装,从而沿着期望的微通道的尺寸闭合一个或多个访问孔。 因此,该方法适用于在例如RF微系统,流体微系统和生物流体应用领域中的微机电系统的快速成型的一个上下文中。 此外,该方法可以实现集成电路的快速原型设计。
    • 4. 发明授权
    • Device speed alteration by electron-hole pair injection and device heating
    • 通过电子 - 空穴对注入和器件加热改变器件速度
    • US06882170B2
    • 2005-04-19
    • US10313933
    • 2002-12-05
    • Travis EilesJeremy A. Rowlette
    • Travis EilesJeremy A. Rowlette
    • G01R31/3161G01R31/26
    • G01R31/3161
    • Integrated circuit and integrated circuit device diagnostic methods and apparatus in accordance with the present invention are provided. The IC is operated to produce an output marginally above a pass-fail threshold for a particular performance criteria. The IC is made to fail that criteria by inducing an electrical stress in an IC device that is of marginal design for that particular criteria. The electrical stress acts to minutely degrade the performance of the IC device driving the IC below the pass-fail threshold. When each IC device is stressed in accordance with the embodiments of the present invention, marginal IC devices are identified to enable the design to be modified. The induced electrical stress is non-destructive to the IC device and IC, which permits a repeatable diagnostic process, as well as allows for the diagnostic testing of other IC devices in the same microcircuit.
    • 提供了根据本发明的集成电路和集成电路设备诊断方法和装置。 运行IC以产生略高于特定性能标准的通过失败阈值的输出。 通过在针对该特定标准的边缘设计的IC器件中引起电应力来使IC失效。 电应力微小地降低驱动IC的IC器件的性能,低于通过失败阈值。 当根据本发明的实施例对每个IC器件进行应力时,识别边缘IC器件使得能够修改该设计。 感应电应力对IC器件和IC是非破坏性的,这允许可重复的诊断过程,并且允许在同一微电路中对其它IC器件进行诊断测试。