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    • 10. 发明授权
    • Tunable radiation emitting semiconductor device
    • 可调辐射发射半导体器件
    • US07633081B2
    • 2009-12-15
    • US10556615
    • 2004-05-13
    • Erik Petrus Antonius Maria BakkersStefan Peter Grabowski
    • Erik Petrus Antonius Maria BakkersStefan Peter Grabowski
    • H01L29/06
    • H01L33/24H01L33/0004H01L33/38
    • A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light radiation. The structure is operable to emit light radiation in response to a current flow therethrough. Moreover, the elongated structure is fabricated to be sufficiently narrow for quantum confinement of charge carriers associated with the current flow to occur therein. Furthermore, the structure further includes an electrode arrangement for applying an electric field to the elongated structure for causing bending of its bandgap characteristic for modulating a wavelength of the light radiation emitted in operation from the structure in response to the current flow therethrough.
    • 可调谐辐射半导体器件包括至少部分地由一个或多个半导体材料制成的细长结构,所述半导体材料具有包括能量对应于光辐射的光子能量的一个或多个能量跃迁的带隙特性。 该结构可操作以响应于其中的电流而发射光辐射。 此外,细长结构被制造为足够窄以使与其中发生的电流相关联的电荷载流子的量子限制。 此外,该结构还包括用于向细长结构施加电场的电极装置,用于引起其带隙特性的弯曲,以响应于流过其中的电流而从结构中调制在操作中发射的光辐射的波长。