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1. 发明授权

US09633998B2 Semiconductor device and method for making the same 有权
公开(公告)号：US09633998B2
公开(公告)日：2017-04-25
申请号：US13613848
申请日：2012-09-13
申请人： Stanislav Ivanovich Soloviev , Ahmed Elasser , Alexander Viktorovich Bolotnikov , Alexey Vert , Peter Almern Losee
发明人： Stanislav Ivanovich Soloviev , Ahmed Elasser , Alexander Viktorovich Bolotnikov , Alexey Vert , Peter Almern Losee
IPC分类号： H01L29/15 , H01L27/06 , H01L27/08
CPC分类号： H01L27/0676 , H01L27/0817 , H01L27/1443 , H01L27/14609 , H01L29/66363 , H01L29/7412
摘要： A semiconductor device is provided. The semiconductor device includes an avalanche photodiode unit and a thyristor unit. The avalanche photodiode unit is configured to receive incident light to generate a trigger current and comprises a wide band-gap semiconductor. The thyristor unit is configured to be activated by the trigger current to an electrically conductive state. A semiconductor device and a method for making a semiconductor device are also presented.

2. 发明申请

US20140070231A1 SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20140070231A1
公开(公告)日：2014-03-13
申请号：US13613848
申请日：2012-09-13
申请人： Stanislav Ivanovich Soloviev , Ahmed Elasser , Alexander Viktorovich Bolotnikov , Alexey Vert , Peter Almern Losee
发明人： Stanislav Ivanovich Soloviev , Ahmed Elasser , Alexander Viktorovich Bolotnikov , Alexey Vert , Peter Almern Losee
IPC分类号： H01L29/74 , H01L29/24 , H01L21/332 , H01L29/20
CPC分类号： H01L27/0676 , H01L27/0817 , H01L27/1443 , H01L27/14609 , H01L29/66363 , H01L29/7412
摘要： A semiconductor device is provided. The semiconductor device includes an avalanche photodiode unit and a thyristor unit. The avalanche photodiode unit is configured to receive incident light to generate a trigger current and comprises a wide band-gap semiconductor. The thyristor unit is configured to be activated by the trigger current to an electrically conductive state. A semiconductor device and a method for making a semiconductor device are also presented.
摘要翻译：提供半导体器件。半导体器件包括雪崩光电二极管单元和晶闸管单元。雪崩光电二极管单元被配置为接收入射光以产生触发电流并且包括宽带隙半导体。晶闸管单元被配置为被触发电流激活到导电状态。还提出了半导体器件和制造半导体器件的方法。

3. 发明授权

US08691634B2 Optically triggered semiconductor device and method for making the same 有权
标题翻译：光学触发半导体器件及其制造方法
公开(公告)号：US08691634B2
公开(公告)日：2014-04-08
申请号：US13960971
申请日：2013-08-07
申请人： Ahmed Elasser , Stephen Daley Arthur , Alexey Vert , Stanislav Ivanovich Soloviev , Peter Almern Losee
发明人： Ahmed Elasser , Stephen Daley Arthur , Alexey Vert , Stanislav Ivanovich Soloviev , Peter Almern Losee
IPC分类号： H01L21/332
CPC分类号： H01L31/1113 , H01L27/0817 , H01L29/74
摘要： A thyristor device includes a semiconductor body and a conductive anode. The semiconductor body has a plurality of doped layers forming a plurality of dopant junctions and includes an optical thyristor, a first amplifying thyristor, and a switching thyristor. The conductive anode is disposed on a first side of the semiconductor body. The optical thyristor is configured to receive incident radiation to generate a first electric current, and the first amplifying thyristor is configured to increase the first electric current from the optical thyristor to at least a threshold current. The switching thyristor switches to the conducting state in order to conduct a second electric current from the anode and through the semiconductor body.
摘要翻译：晶闸管器件包括半导体本体和导电阳极。半导体本体具有形成多个掺杂剂结的多个掺杂层，并且包括光学晶闸管，第一放大晶闸管和开关晶闸管。导电阳极设置在半导体本体的第一侧上。光晶闸管被配置为接收入射辐射以产生第一电流，并且第一放大晶闸管被配置为将来自光晶闸管的第一电流增加到至少阈值电流。开关晶闸管切换到导通状态，以便从阳极和半导体本体传导第二电流。

4. 发明申请

US20130153953A1 OPTICALLY TRIGGERED SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME 有权
公开(公告)号：US20130153953A1
公开(公告)日：2013-06-20
申请号：US13328796
申请日：2011-12-16
申请人： Ahmed Elasser , Arthur Stephen Daley , Alexey Vert , Stanislav I. Soloviev , Peter Almern Losee
发明人： Ahmed Elasser , Arthur Stephen Daley , Alexey Vert , Stanislav I. Soloviev , Peter Almern Losee
IPC分类号： H01L27/06 , H01L21/332
CPC分类号： H01L31/1113 , H01L27/0817 , H01L29/74
摘要： A thyristor device includes a semiconductor body and a conductive anode. The semiconductor body has a plurality of doped layers forming a plurality of dopant junctions and includes an optical thyristor, a first amplifying thyristor, and a switching thyristor. The conductive anode is disposed on a first side of the semiconductor body. The optical thyristor is configured to receive incident radiation to generate a first electric current, and the first amplifying thyristor is configured to increase the first electric current from the optical thyristor to at least a threshold current. The switching thyristor switches to the conducting state in order to conduct a second electric current from the anode and through the semiconductor body.

5. 发明授权

US08536617B2 Optically triggered semiconductor device and method for making the same 有权
标题翻译：光学触发半导体器件及其制造方法
公开(公告)号：US08536617B2
公开(公告)日：2013-09-17
申请号：US13328796
申请日：2011-12-16
申请人： Alexey Vert , Ahmed Elasser , Arthur Stephen Daley , Stanislav I Soloviev , Peter Almern Losee
发明人： Alexey Vert , Ahmed Elasser , Arthur Stephen Daley , Stanislav I Soloviev , Peter Almern Losee
IPC分类号： H01L31/101
CPC分类号： H01L31/1113 , H01L27/0817 , H01L29/74
摘要： A thyristor device includes a semiconductor body and a conductive anode. The semiconductor body has a plurality of doped layers forming a plurality of dopant junctions and includes an optical thyristor, a first amplifying thyristor, and a switching thyristor. The conductive anode is disposed on a first side of the semiconductor body. The optical thyristor is configured to receive incident radiation to generate a first electric current, and the first amplifying thyristor is configured to increase the first electric current from the optical thyristor to at least a threshold current. The switching thyristor switches to the conducting state in order to conduct a second electric current from the anode and through the semiconductor body.
摘要翻译：晶闸管器件包括半导体本体和导电阳极。半导体本体具有形成多个掺杂剂结的多个掺杂层，并且包括光学晶闸管，第一放大晶闸管和开关晶闸管。导电阳极设置在半导体本体的第一侧上。光晶闸管被配置为接收入射辐射以产生第一电流，并且第一放大晶闸管被配置为将来自光晶闸管的第一电流增加到至少阈值电流。开关晶闸管切换到导通状态，以便从阳极和半导体本体传导第二电流。

6. 发明授权

US09006027B2 Systems and methods for terminating junctions in wide bandgap semiconductor devices 有权
标题翻译：用于在宽带隙半导体器件中终止结的系统和方法
公开(公告)号：US09006027B2
公开(公告)日：2015-04-14
申请号：US13610614
申请日：2012-09-11
申请人： Zachary Matthew Stum , Ahmed Elasser , Stephen Daley Arthur , Stanislav I. Soloviev , Peter Almern Losee
发明人： Zachary Matthew Stum , Ahmed Elasser , Stephen Daley Arthur , Stanislav I. Soloviev , Peter Almern Losee
IPC分类号： H01L21/00 , H01L31/0328 , H01L29/06 , H01L29/74 , H01L29/87 , H01L21/02 , H01L29/73 , H01L29/739 , H01L29/16 , H01L29/20
CPC分类号： H01L29/0661 , H01L21/02107 , H01L29/063 , H01L29/1608 , H01L29/2003 , H01L29/73 , H01L29/7395 , H01L29/74 , H01L29/87
摘要： An electrical device includes a blocking layer disposed on top of a substrate layer, wherein the blocking layer and the substrate layer each are wide bandgap semiconductors, and the blocking layer and the substrate layer form a buried junction in the electrical device. The device comprises a termination feature disposed at a surface of the blocking layer and a filled trench disposed proximate to the termination feature. The filled trench extends through the blocking layer to reach the substrate layer and is configured to direct an electrical potential associated with the buried junction toward the termination feature disposed near the surface of the blocking layer to terminate the buried junction.
摘要翻译：电气装置包括设置在基底层顶部的阻挡层，其中阻挡层和基底层各自是宽带隙半导体，并且阻挡层和基底层在电气装置中形成掩埋结。该装置包括设置在阻挡层的表面处的端接特征和靠近端接特征设置的填充沟槽。填充的沟槽延伸穿过阻挡层以到达衬底层并且被配置为将与掩埋结相关联的电势引导到设置在阻挡层表面附近的端接特征以终止掩埋结。

7. 发明申请

US20140070229A1 SYSTEMS AND METHODS FOR TERMINATING JUNCTIONS IN WIDE BANDGAP SEMICONDUCTOR DEVICES 有权
标题翻译：用于在宽带半导体器件中终止结的系统和方法
公开(公告)号：US20140070229A1
公开(公告)日：2014-03-13
申请号：US13610614
申请日：2012-09-11
申请人： Zachary Matthew Stum , Ahmed Elasser , Stephen Daley Arthur , Stanislav I. Soloviev , Peter Almern Losee
发明人： Zachary Matthew Stum , Ahmed Elasser , Stephen Daley Arthur , Stanislav I. Soloviev , Peter Almern Losee
IPC分类号： H01L29/20 , H01L21/768 , H01L29/161
CPC分类号： H01L29/0661 , H01L21/02107 , H01L29/063 , H01L29/1608 , H01L29/2003 , H01L29/73 , H01L29/7395 , H01L29/74 , H01L29/87
摘要： An electrical device includes a blocking layer disposed on top of a substrate layer, wherein the blocking layer and the substrate layer each are wide bandgap semiconductors, and the blocking layer and the substrate layer form a buried junction in the electrical device. The device comprises a termination feature disposed at a surface of the blocking layer and a filled trench disposed proximate to the termination feature. The filled trench extends through the blocking layer to reach the substrate layer and is configured to direct an electrical potential associated with the buried junction toward the termination feature disposed near the surface of the blocking layer to terminate the buried junction.
摘要翻译：电气装置包括设置在基底层顶部的阻挡层，其中阻挡层和基底层各自是宽带隙半导体，并且阻挡层和基底层在电气装置中形成掩埋结。该装置包括设置在阻挡层的表面处的端接特征和靠近端接特征设置的填充沟槽。填充的沟槽延伸穿过阻挡层以到达衬底层并且被配置为将与掩埋结相关联的电势引导到设置在阻挡层表面附近的端接特征以终止掩埋结。

8. 发明申请

US20100277868A1 INSULATED METAL SUBSTRATES INCORPORATING ADVANCED COOLING 有权
标题翻译：包含高级冷却的绝缘金属基板
公开(公告)号：US20100277868A1
公开(公告)日：2010-11-04
申请号：US12433301
申请日：2009-04-30
申请人： Richard Alfred Beaupre , Peter Almern Losee , Xiaochun Shen , John Stanley Glaser , Joseph Lucian Smolenski , Adam Gregory Pautsch
发明人： Richard Alfred Beaupre , Peter Almern Losee , Xiaochun Shen , John Stanley Glaser , Joseph Lucian Smolenski , Adam Gregory Pautsch
IPC分类号： H05K7/20
CPC分类号： H05K7/20927 , H01L23/473 , H01L2924/0002 , H01L2924/00
摘要： A power module includes one or more semiconductor power devices bonded to an insulated metal substrate (IMS). A plurality of cooling fluid channels is integrated into the IMS.
摘要翻译：功率模块包括结合到绝缘金属基板（IMS）的一个或多个半导体功率器件。多个冷却流体通道被集成到IMS中。

9. 发明申请

US20130221374A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20130221374A1
公开(公告)日：2013-08-29
申请号：US13597299
申请日：2012-08-29
申请人： Ramakrishna Rao , Stephen Daley Arthur , Peter Almern Losee , Kevin Sean Matocha
发明人： Ramakrishna Rao , Stephen Daley Arthur , Peter Almern Losee , Kevin Sean Matocha
IPC分类号： H01L29/16
CPC分类号： H01L29/1608 , H01L29/0615 , H01L29/1095 , H01L29/66068 , H01L29/66712 , H01L29/7802 , H01L29/7811
摘要： A semiconductor device includes a substrate comprising a semiconductor material. The substrate has a surface that defines a surface normal direction and includes a P-N junction comprising an interface between a first region and a second region, where the first (second) region includes a first (second) dopant type, so as to have a first (second) conductivity type. The substrate includes a termination extension region disposed adjacent to the P-N junction and having an effective concentration of the second dopant type that is generally the effective concentration of the second dopant type in the second doped region. The substrate includes an adjust region disposed adjacent to the surface and between the surface and at least part of the termination extension region, where the effective concentration of the second dopant type generally decreases when moving from the termination extension region into the adjust region along the surface normal direction.
摘要翻译：半导体器件包括包含半导体材料的衬底。衬底具有限定表面法线方向的表面，并且包括PN结，其包括在第一区域和第二区域之间的界面，其中第一（第二）区域包括第一（第二）掺杂剂类型，以便具有第一（第二）导电类型。衬底包括邻近P-N结设置并且具有通常为第二掺杂区域中的第二掺杂剂类型的有效浓度的第二掺杂剂类型的有效浓度的终止延伸区域。衬底包括与表面相邻并且在表面与终止延伸区域的至少一部分之间布置的调节区域，其中当从端接延伸区域沿着表面移动到调节区域中时，第二掺杂剂类型的有效浓度通常降低正常方向

10. 发明授权

US08232637B2 Insulated metal substrates incorporating advanced cooling 有权
标题翻译：采用先进冷却的绝缘金属基板
公开(公告)号：US08232637B2
公开(公告)日：2012-07-31
申请号：US12433301
申请日：2009-04-30
申请人： Richard Alfred Beaupre , Peter Almern Losee , Xiaochun Shen , John Stanley Glaser , Joseph Lucian Smolenski , Adam Gregory Pautsch
发明人： Richard Alfred Beaupre , Peter Almern Losee , Xiaochun Shen , John Stanley Glaser , Joseph Lucian Smolenski , Adam Gregory Pautsch
IPC分类号： H01L23/34
CPC分类号： H05K7/20927 , H01L23/473 , H01L2924/0002 , H01L2924/00
摘要： A power module includes one or more semiconductor power devices bonded to an insulated metal substrate (IMS). A plurality of cooling fluid channels is integrated into the IMS.
摘要翻译：功率模块包括结合到绝缘金属基板（IMS）的一个或多个半导体功率器件。多个冷却流体通道被集成到IMS中。

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