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1. 发明授权

US5596522A Homogeneous compositions of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements 失效
标题翻译：微晶半导体材料，半导体器件和由其制造的直接可重写存储器元件的均匀组成，以及由存储元件制造的阵列
公开(公告)号：US5596522A
公开(公告)日：1997-01-21
申请号：US510400
申请日：1995-08-02
申请人： Stanford R. Ovshinsky , Stephen J. Hudgens , David Strand , Wolodymyr Czubatyj , Jesus Gonzalez-Hernandez , Hellmut Fritzsche , Quiyi Ye , Sergey A. Kostylev , Benjamin S. Chao
发明人： Stanford R. Ovshinsky , Stephen J. Hudgens , David Strand , Wolodymyr Czubatyj , Jesus Gonzalez-Hernandez , Hellmut Fritzsche , Quiyi Ye , Sergey A. Kostylev , Benjamin S. Chao
IPC分类号： G11C11/56 , G11C16/02 , H01L27/24 , H01L45/00
CPC分类号： G11C11/56 , C01B19/007 , G11C11/5678 , G11C13/0004 , H01L27/2409 , H01L27/2463 , H01L45/065 , H01L45/1233 , H01L45/1253 , H01L45/144 , G11C13/04 , G11C2213/72
摘要： A unique class of microcrystalline semiconductor materials which can be modulated, within a crystalline phase, to assume any one of a large dynamic range of different Fermi level positions while maintaining a substantially constant band gap over the entire range, even after a modulating field has been removed. A solid state, directly overwritable, electronic and optical, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory based upon the novel switching characteristics provided by said unique class of semiconductor materials, which memory exhibits orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory of the instant invention is in turn characterized, inter alia, by numerous stable and non-volatile detectable configurations of local atomic order, which configurations can be selectively and repeatably accessed by input signals of varying levels.
摘要翻译：一种独特的微晶半导体材料，其可以在晶相内被调制以承担不同费米能级位置的大动态范围中的任何一种，同时在整个范围内保持基本恒定的带隙，即使在调制场已经被删除。基于由所述独特类型的半导体材料提供的新型开关特性的固态，直接可重写的，电子和光学，非易失性，高密度，低成本，低能量，高速度，容易制造的多单元单元存储器，其中存储器在显着降低的能量水平下显示出高数量级的开关速度。特别地，本发明的新颖记忆特征还在于本地原子序列的许多稳定和非易失性可检测配置，其可通过不同等级的输入信号选择性地和可重复地访问这些配置。

2. 发明授权

US4766471A Thin film electro-optical devices 失效
标题翻译：薄膜电光器件
公开(公告)号：US4766471A
公开(公告)日：1988-08-23
申请号：US821643
申请日：1986-01-23
申请人： Stanford R. Ovshinsky , Robert R. Johnson , Stephen J. Hudgens , Roger W. Pryor , Guy C. Wicker , Robert S. Nolan
发明人： Stanford R. Ovshinsky , Robert R. Johnson , Stephen J. Hudgens , Roger W. Pryor , Guy C. Wicker , Robert S. Nolan
IPC分类号： H01L29/739 , H01L31/113 , H01L31/16 , H01L31/173 , H01L33/00 , H01S5/026 , H04B10/00 , H01L31/12
CPC分类号： H01L31/162 , H01L29/7391 , H01L31/113 , H01L31/173 , H01L33/0004 , H01S5/0264 , H04B10/802
摘要： An electro-optical communication device which includes a light transmissive conduit integrally formed to interconnect a light emitter and a light detector. The length over which the light transmissive conduit extends is substantially greater than the size of either the light emitter or the light detector. In the preferred embodiment, the light emitter and the light detector are each formed from amorphous semiconductor alloy material and may be substantially surrounded by the light transmissive conduit.
摘要翻译：一种电光通信装置，其包括整体形成以将发光器和光检测器互连的透光导管。透光导管延伸的长度实质上大于光发射器或光检测器的尺寸。在优选实施例中，光发射器和光检测器各自由非晶半导体合金材料形成，并且可以基本上被透光导管包围。

3. 发明授权

US4668968A Integrated circuit compatible thin film field effect transistor and method of making same 失效
标题翻译：集成电路兼容薄膜场效应晶体管及其制作方法
公开(公告)号：US4668968A
公开(公告)日：1987-05-26
申请号：US610130
申请日：1984-05-14
申请人： Stanford R. Ovshinsky , Stephen J. Hudgens
发明人： Stanford R. Ovshinsky , Stephen J. Hudgens
IPC分类号： H01L29/78 , H01L27/12 , H01L29/161 , H01L29/40 , H01L29/786 , H01L29/04 , H01L29/54
CPC分类号： H01L29/78684 , H01L29/161
摘要： There is disclosed integrated circuit compatible thin film field effect transistors which can be fabricated at low temperatures and operated at fast switching rates for use, for example, in video rate applications. The transistors include a body of germanium semiconductor material having a structure more ordered than amorphous material and less ordered than single crystalline material. The source and drain of the transistors comprises rectifying contacts formed on or in the body of germanium semiconductor material. Also disclosed are a method of making the transistors and an electronically addressable array system utilizing the transistors to advantage.
摘要翻译：公开了集成电路兼容的薄膜场效应晶体管，其可以在低温下制造并且以快速切换速率操作以用于例如视频速率应用。晶体管包括具有比无定形材料更有序的结构的锗半导体材料体，并且比单晶材料有序。晶体管的源极和漏极包括形成在锗半导体材料体内或体内的整流触点。还公开了制造晶体管和利用晶体管的电子可寻址阵列系统的方法。

4. 发明授权

US5093149A Method of depositing directly activated species onto a remotely located substrate 失效
标题翻译：将直接活化的物质沉积到远位的基底上的方法
公开(公告)号：US5093149A
公开(公告)日：1992-03-03
申请号：US520988
申请日：1990-05-07
申请人： Joachim Doehler , Stephen J. Hudgens , Stanford R. Ovshinsky , Lester R. Peedin , Jeffrey M. Krisko
发明人： Joachim Doehler , Stephen J. Hudgens , Stanford R. Ovshinsky , Lester R. Peedin , Jeffrey M. Krisko
IPC分类号： C23C16/44 , C23C16/452 , C23C16/455
CPC分类号： C23C16/4551 , C23C16/452 , C23C16/455 , C23C16/45514
摘要： A method of depositing high quality thin film at a high rate of deposition through the formation of a high flux of activated precursor species of a precursor deposition gas by employing a substantial pressure differential between the pressure adjacent the aperture in a conduit from which said precursor deposition gas is introduced into the interior of a vacuumized enclosure and the background pressure which exits in said enclosure. As the precursor deposition gas is introduced into said enclosure, a high density plume of said activated precursor species are formed therefrom due to an electromagnetic field established in an activation region adjacent said aperture. The pressure differential is sufficient to cause those activated precursor species to be deposited upon a remotely positioned substrate. In order to obtain a sufficient pressure differential, it is preferred that the flow of the precursor deposition gas reaches transonic velocity. And in order to obtain a high quality thin film, it is preferred that the plume of activated precursor species is spaced from the substrate; without structural or electrical confinement, a distance from the activation region greater than the mean free path of undesired activated precursor species and within the mean free path of desired species.
摘要翻译：一种沉积高质量薄膜的方法，该方法是通过在邻近导管孔之间的压力之间产生相当大的压力差，形成高通量的活化前体物质的前体沉积气体，气体被引入真空封壳的内部，并且在所述外壳中离开的背景压力。当前体沉积气体被引入所述外壳中时，由于在邻近所述孔的激活区域中建立的电磁场，所以形成所述活化的前体物质的高密度羽流。压力差足以使这些活化的前体物质沉积在远距离定位的基底上。为了获得足够的压差，优选前体沉积气体的流量达到跨音速。并且为了获得高质量的薄膜，优选活化的前体物质的羽流与基底间隔开; 没有结构或电气限制，距离激活区域的距离大于不期望的活化的前体物质的平均自由程和在所需物种的平均自由程中。

5. 发明授权

US4745000A Method of fabricating electrostatic drums using microwave energy 失效
标题翻译：使用微波能量制造静电鼓的方法
公开(公告)号：US4745000A
公开(公告)日：1988-05-17
申请号：US8442
申请日：1987-01-29
申请人： Stanford R. Ovshinsky , David D. Allred , Lee Walter , Stephen J. Hudgens
发明人： Stanford R. Ovshinsky , David D. Allred , Lee Walter , Stephen J. Hudgens
IPC分类号： C23C16/511 , H01J37/32 , H01L21/205 , C23C11/02
CPC分类号： H01J37/3222 , C23C16/511 , H01J37/32192 , H01J37/32275 , H01L21/0237 , H01L21/02422 , H01L21/02425 , H01L21/0245 , H01L21/02505 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： An improved method of fabricating the thin film layers of an electrostatic image producing device utilizing microwave energy by operating at substantially the minimum of the pressure-power curve for the particular geometry of reaction vessel and composition of reaction gases being utilized.
摘要翻译：一种改进的制造静电图像产生装置的薄膜层的方法，该装置利用微波能量，通过对反应容器的特定几何形状和组成的反应气体的组成进行基本上最小的压力 - 功率曲线的操作。

6. 发明授权

US4737379A Plasma deposited coatings, and low temperature plasma method of making same 失效
标题翻译：等离子体沉积涂层和低温等离子体制造方法
公开(公告)号：US4737379A
公开(公告)日：1988-04-12
申请号：US32263
申请日：1987-03-31
申请人： Stephen J. Hudgens , Annette G. Johncock , Stanford R. Ovshinsky , Prem Nath
发明人： Stephen J. Hudgens , Annette G. Johncock , Stanford R. Ovshinsky , Prem Nath
IPC分类号： C23C16/50 , C23C16/30 , C23C16/34 , C23C16/40 , C23C16/42 , C23C16/511 , H01J37/32 , H01L21/205 , B05D3/06
CPC分类号： H01J37/32192 , B32B17/10018 , C23C16/30 , C23C16/511 , H01J37/3222 , H01J37/32275 , H01L21/0237 , H01L21/02422 , H01L21/0243 , H01L21/02532 , H01L21/0262 , B32B2375/00
摘要： A method of depositing a substantially hydrogen free or controlled hydrogen content multi-element alloy film on a substrate. The method utilizes a microwave excited plasma of a hydrogen free precursor gas to deposit a hard, adherent coating. The method comprises providing a substrate to be coated in a vacuum deposition chamber, with a source of microwave energy coupled to the vacuum deposition chamber. A substantially hydrogen free reaction gas precursor composition is introduced into the reaction chamber at a pressure corresponding substantially to a pressure minimum of the modified Paschen curve for the reaction gas precursor composition. Activation of the source of microwave energy excites the reaction gas precursor composition, in this way forming a plasma in the vacuum deposition chamber to deposit a substantially hydrogen free or controlled hydrogen content multi-element alloy film on the substrate.
摘要翻译：将基本上无氢或受控的含氢多元素合金膜沉积在基底上的方法。该方法利用无氢前体气体的微波激发等离子体沉积硬的粘附涂层。该方法包括在真空沉积室中提供待涂覆的基底，其中微波能量源耦合到真空沉积室。将基本上无氢的反应气体前体组合物以基本上对应于反应气体前体组合物的改性Paschen曲线的压力最小值的压力引入反应室中。微波能量源的激活激发反应气体前体组合物，以这种方式在真空沉积室中形成等离子体，以在基板上沉积基本上无氢或受控的含氢多元素合金膜。

7. 发明授权

US4615905A Method of depositing semiconductor films by free radical generation 失效
标题翻译：通过自由基生成沉积半导体膜的方法
公开(公告)号：US4615905A
公开(公告)日：1986-10-07
申请号：US725616
申请日：1985-04-22
申请人： Stanford R. Ovshinsky , David D. Allred , Lee Walter , Stephen J. Hudgens
发明人： Stanford R. Ovshinsky , David D. Allred , Lee Walter , Stephen J. Hudgens
IPC分类号： C23C16/511 , H01J37/32 , H01L21/205 , C23C11/02
CPC分类号： H01J37/3222 , C23C16/511 , H01J37/32192 , H01J37/32275 , H01L21/02381 , H01L21/02425 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： A method of depositing a semiconductor alloy film onto a substrate by activating groups of free radicals and incorporating desired ones of the activated groups into the film.
摘要翻译：一种通过激活自由基基团并将期望的活化基团并入膜中将半导体合金膜沉积到基底上的方法。

8. 发明授权

US5166758A Electrically erasable phase change memory 失效
标题翻译：电可擦除相变存储器
公开(公告)号：US5166758A
公开(公告)日：1992-11-24
申请号：US642984
申请日：1991-01-18
申请人： Stanford R. Ovshinsky , Stephen J. Hudgens , Wolodymyr Czubatyj , David A. Strand , Guy C. Wicker
发明人： Stanford R. Ovshinsky , Stephen J. Hudgens , Wolodymyr Czubatyj , David A. Strand , Guy C. Wicker
IPC分类号： H01L27/10 , G11C11/56 , G11C16/02 , H01H45/00 , H01L21/8247 , H01L27/105 , H01L27/115 , H01L27/24 , H01L29/788 , H01L29/792 , H01L45/00
CPC分类号： G11C13/0004 , G11C11/56 , G11C11/5678 , H01L27/115 , H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1675 , G11C13/04
摘要： An electrically erasable phase change memory utilizing a stoichiometrically and volumetrically balanced phase change material in which both the switching times and the switching energies required for the transitions between the amorphous and the crystalline states are substantially reduced below those attainable with prior art electrically erasable phase change memories. One embodiment of the invention comprises an integrated circuit implementation of the memory in a high bit density configuration in which manufacturing costs are correspondingly reduced and performance parameters are further improved.

9. 发明授权

US4937094A Method of creating a high flux of activated species for reaction with a remotely located substrate 失效
标题翻译：产生高通量的活化物质用于与位于远端的基质反应的方法
公开(公告)号：US4937094A
公开(公告)日：1990-06-26
申请号：US373300
申请日：1989-06-29
申请人： Joachim Doehler , Stephen J. Hudgens , Stanford R. Ovshinsky , Buddie Dotter, II , Lester R. Peedin , Jeffrey M. Krisko , Annette Krisko
发明人： Joachim Doehler , Stephen J. Hudgens , Stanford R. Ovshinsky , Buddie Dotter, II , Lester R. Peedin , Jeffrey M. Krisko , Annette Krisko
IPC分类号： C23C16/44 , C23C16/452 , C23C16/455
CPC分类号： C23C16/4551 , C23C16/452 , C23C16/455 , C23C16/45514
摘要： A method of forming a high flux of activated species, such as ions, of an energy transferring gas by employing a substantial pressure differential between a first conduit in which the energy transferring gas is introduced into a vacuumized enclosure and the background pressure which exits in said enclosure. In one embodiment, the flow rate of the energy transferring gas flowing through said first conduit, when taken in conjunction with said pressure differential, causes the high flux to activated species of the energy transferring gas to collide with a precursor deposition/etchant gas, remotely introduced into the enclosure through a second conduit, for forming deposition/etchant species therefrom. In an alternate embodiment, the pressure differential causes those activated species, themselves, to be either deposited upon or etched away from the surface of a remotely positioned substrate.
摘要翻译：一种通过在其中将能量转移气体引入抽真空的外壳中的第一导管和在所述真空室中退出的背景压力之间的实质压差来形成能量转移气体的高通量活化物质如离子的方法，外壳。在一个实施例中，当与所述压力差相结合时，流过所述第一导管的能量转移气体的流速导致能量转移气体的活化物质与前体沉积/蚀刻剂气体的远距离碰撞通过第二导管引入外壳，用于从其形成沉积/蚀刻剂物质。在替代实施例中，压差使得这些活化物质本身沉积在或远离远离定位的基底的表面上蚀刻。

10. 发明授权

US4701343A Method of depositing thin films using microwave energy 失效
标题翻译：使用微波能量沉积薄膜的方法
公开(公告)号：US4701343A
公开(公告)日：1987-10-20
申请号：US896049
申请日：1986-08-13
申请人： Stanford R. Ovshinsky , David D. Allred , Lee Walter , Stephen J. Hudgens
发明人： Stanford R. Ovshinsky , David D. Allred , Lee Walter , Stephen J. Hudgens
IPC分类号： C23C16/511 , H01J37/32 , H01L21/205 , C23C11/02
CPC分类号： H01J37/3222 , C23C16/511 , H01J37/32192 , H01J37/32275 , H01L21/0242 , H01L21/02425 , H01L21/0245 , H01L21/02488 , H01L21/02505 , H01L21/02532 , H01L21/0262
摘要： An improved method of depositing thin films onto a substrate with microwave energy by operating at substantially the minimum of the pressure-power curve for the particular geometry of reaction vessel and composition of reaction gases being utilized.
摘要翻译：通过对反应容器的特定几何形状和组成的反应气体的组成进行基本上最小的压力 - 功率曲线的操作，通过微波能量将薄膜沉积到衬底上的改进方法。

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