专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09716264B2 Electrode for lithium secondary battery, method of manufacturing the electrode, and lithium secondary battery including the electrode 有权
公开(公告)号：US09716264B2
公开(公告)日：2017-07-25
申请号：US13593468
申请日：2012-08-23
申请人： Soon-Sung Suh , Sung-Hwan Moon , Yury Matulevich , Seung-Uk Kwon , Yo-Han Park , Chang-Ui Jeong , Jae-Hyuk Kim , Chun-Gyoo Lee , Jong-Seo Choi
发明人： Soon-Sung Suh , Sung-Hwan Moon , Yury Matulevich , Seung-Uk Kwon , Yo-Han Park , Chang-Ui Jeong , Jae-Hyuk Kim , Chun-Gyoo Lee , Jong-Seo Choi
IPC分类号： H01M4/134 , H01M4/1395 , H01M4/38 , H01M10/0525 , H01M4/02
CPC分类号： H01M4/1395 , H01M4/386 , H01M10/0525 , H01M2004/021
摘要： An electrode for a lithium secondary battery includes a silicon-based alloy, and has a surface roughness of about 1 to about 10 μm and a surface roughness deviation of 5 μm or less. A method of manufacturing the electrode includes mixing an electrode composition, milling the composition, coating the milled composition on a current collector, and drying the milled composition. A lithium secondary battery includes the electrode.

2. 发明申请

US20130216912A1 ELECTRODE FOR LITHIUM SECONDARY BATTERY, METHOD OF MANUFACTURING THE ELECTRODE, AND LITHIUM SECONDARY BATTERY INCLUDING THE ELECTRODE 有权
标题翻译：用于锂二次电池的电极，制造电极的方法和包括电极的锂二次电池
公开(公告)号：US20130216912A1
公开(公告)日：2013-08-22
申请号：US13593468
申请日：2012-08-23
申请人： Soon-Sung Suh , Sung-Hwan Moon , Yury Matulevich , Seung-Uk Kwon , Yo-Han Park , Chang-Ui Jeong , Jae-Hyuk Kim , Chun-Gyoo Lee , Jong-Seo Choi
发明人： Soon-Sung Suh , Sung-Hwan Moon , Yury Matulevich , Seung-Uk Kwon , Yo-Han Park , Chang-Ui Jeong , Jae-Hyuk Kim , Chun-Gyoo Lee , Jong-Seo Choi
IPC分类号： H01M4/38 , H01M4/583 , B05D3/00 , H01M4/48 , B05D5/12 , H01M4/46 , H01M4/40
CPC分类号： H01M4/1395 , H01M4/386 , H01M10/0525 , H01M2004/021
摘要： An electrode for a lithium secondary battery includes a silicon-based alloy, and has a surface roughness of about 1 to about 10 μm and a surface roughness deviation of 5 μm or less. A method of manufacturing the electrode includes mixing an electrode composition, milling the composition, coating the milled composition on a current collector, and drying the milled composition. A lithium secondary battery includes the electrode.
摘要翻译：锂二次电池用电极包括硅系合金，其表面粗糙度为1〜10μm左右，表面粗糙度偏差为5μm以下。制造电极的方法包括混合电极组合物，研磨组合物，在集电器上涂覆研磨组合物，并干燥研磨组合物。锂二次电池包括电极。

3. 发明申请

US20130202967A1 NEGATIVE ACTIVE MATERIAL FOR RECHARGEABLE LITHIUM BATTERY AND RECHARGEABLE LITHIUM BATTERY INCLUDING SAME 审中-公开
标题翻译：用于可充电锂电池和可充电锂电池的负极活性材料
公开(公告)号：US20130202967A1
公开(公告)日：2013-08-08
申请号：US13548177
申请日：2012-07-12
申请人： Jae-Hyuk Kim , Sung-Hwan Moon , Seung-Uk Kwon , Soon-Sung Suh , Chang-Ui Jeong , Yo-Han Park , Chun-Gyoo Lee , Yury Matulevich , Jong-Seo Choi
发明人： Jae-Hyuk Kim , Sung-Hwan Moon , Seung-Uk Kwon , Soon-Sung Suh , Chang-Ui Jeong , Yo-Han Park , Chun-Gyoo Lee , Yury Matulevich , Jong-Seo Choi
IPC分类号： H01M4/583 , H01M4/38
CPC分类号： H01M4/386 , H01M4/364 , H01M4/483 , H01M4/502 , H01M4/523 , H01M4/625 , H01M10/052 , H01M2004/027
摘要： A negative active material for a rechargeable lithium battery includes a matrix including an Si—X based alloy, where X is not Si and is selected from alkali metals, alkaline-earth metals, Group 13 elements, Group 14 elements, Group 15 elements, Group 16 elements, transition elements, rare earth elements, or combinations thereof; silicon dispersed in the matrix; and oxygen in the negative active material, the oxygen being included at 20 at % or less based on the total number of atoms in the negative active material. A rechargeable lithium battery includes the negative active material.
摘要翻译：用于可再充电锂电池的负极活性材料包括包含Si-X基合金的基体，其中X不是Si并且选自碱金属，碱土金属，第13族元素，第14族元素，第15族元素，组 16元素，过渡元素，稀土元素或其组合; 硅分散在基质中; 和负极活性物质中的氧，基于负极活性物质中的总原子数，氧被包含在20原子％以下。可充电锂电池包括负极活性材料。

4. 发明申请

US20130130112A1 SILICON BASED SHAPE MEMORY ALLOY NEGATIVE ACTIVE MATERIAL, NEGATIVE ACTIVE MATERIAL COMPOSITION INCLUDING SAME, RECHARGEABLE LITHIUM BATTERY INCLUDING SAME, AND METHOD OF PREPARING SAME 有权
标题翻译：基于硅的形状记忆合金负极活性材料，包括其的负极活性材料组合物，包括其的可充电锂电池及其制备方法
公开(公告)号：US20130130112A1
公开(公告)日：2013-05-23
申请号：US13570413
申请日：2012-08-09
申请人： Byung-Joo CHUNG , Chun-Gyoo Lee
发明人： Byung-Joo CHUNG , Chun-Gyoo Lee
IPC分类号： C22C30/00 , C22C30/04 , H01B1/04 , H01M4/38 , C22C1/02 , H01B1/02 , B82Y30/00
CPC分类号： C22C1/02 , B22F1/004 , B22F1/02 , B82Y30/00 , C22C1/1036 , C22C9/00 , C22C19/03 , C22C30/00 , C22C30/04 , C23C24/08 , H01B1/02 , H01B1/04 , H01M4/133 , H01M4/134 , H01M4/364 , H01M4/366 , H01M4/38 , H01M4/386 , H01M4/587 , H01M4/622 , H01M4/625 , H01M10/052 , H01M2004/021 , Y02E60/122 , Y10T16/44
摘要： A silicon-based shape memory alloy negative active material includes a silicon-based material precipitated on a Ni2Mn1-XZX shape memory alloy basic material. In the silicon-based shape memory alloy negative active material, X satisfies the relationship 0≦X≦1 and Z is one of Al, Ga, In, Sn, or Sb.
摘要翻译：硅基形状记忆合金负极活性材料包括沉积在Ni2Mn1-XZX形状记忆合金基材上的硅基材料。在硅基形状记忆合金负极活性物质中，X满足关系0 @ X @ 1，Z为Al，Ga，In，Sn或Sb之一。

5. 发明授权

US07279830B2 Electron emission device 失效
标题翻译：电子发射装置
公开(公告)号：US07279830B2
公开(公告)日：2007-10-09
申请号：US11068067
申请日：2005-02-26
申请人： Sang-Jo Lee , Chun-Gyoo Lee , Sang-Hyuck Ahn , Su-Bong Hong , Byong-Gon Lee , Sang-Ho Jeon , Yong-Soo Choi
发明人： Sang-Jo Lee , Chun-Gyoo Lee , Sang-Hyuck Ahn , Su-Bong Hong , Byong-Gon Lee , Sang-Ho Jeon , Yong-Soo Choi
IPC分类号： H01J1/304 , H01J1/46
CPC分类号： H01J3/022
摘要： An electron emission device includes gate electrodes formed on a substrate. The gate electrodes are located on a first plane. An insulating layer is formed on the gate electrodes. Cathode electrodes are formed on the insulating layer. Electron emission regions are electrically connected to the cathode electrodes. The electron emission regions are located on a second plane. In addition, the electron emission device includes counter electrodes placed substantially on the second plane of the electron emission regions. The gate electrodes and the counter electrodes are for receiving a same voltage, and a distance, D, between at least one of the electron emission regions and at least one of the counter electrodes satisfies the following condition: 1(μm)≦D≦28.1553+1.7060t(μm), where t indicates a thickness of the insulating layer.
摘要翻译：电子发射器件包括形成在衬底上的栅电极。栅电极位于第一平面上。在栅电极上形成绝缘层。阴极电极形成在绝缘层上。电子发射区域电连接到阴极电极。电子发射区位于第二平面上。此外，电子发射装置包括基本上放置在电子发射区的第二平面上的相对电极。栅电极和对电极用于接收相同的电压，并且至少一个电子发射区域和至少一个相对电极之间的距离D满足以下条件：1（mum）<= D < = 28.1553 + 1.7060t（mum），其中t表示绝缘层的厚度。

6. 发明申请

US20070096621A1 Electron emission display 审中-公开
标题翻译：电子发射显示
公开(公告)号：US20070096621A1
公开(公告)日：2007-05-03
申请号：US11585845
申请日：2006-10-25
申请人： Sang-Ho Jeon , Chun-Gyoo Lee , Sang-Jo Lee , Sang-Hyuck Ahn , Su-Bong Hong , Jong-Hoon Shin
发明人： Sang-Ho Jeon , Chun-Gyoo Lee , Sang-Jo Lee , Sang-Hyuck Ahn , Su-Bong Hong , Jong-Hoon Shin
IPC分类号： H01J1/62 , H01J63/04 , H01J1/00
CPC分类号： H01J29/481 , H01J29/467 , H01J31/127
摘要： An electron emission display includes first and second substrates facing each other, first electrodes formed on the first substrate, and electron emission regions electrically connected to the first electrodes. Second electrodes are placed over the first electrodes such that the second electrodes are electrically insulated from the first electrodes. The second electrodes have a plurality of openings for exposing the electron emission regions. A third electrode is placed over the second electrodes such that the third electrode is electrically insulated from the second electrodes. The third electrode has openings communicating with the openings of the second electrodes. The second and the third electrodes are structured to satisfy the following condition: 1.5≦W2/W1≦3.0 where W1 indicates the width of each opening of the second electrodes, and W2 indicates the width of the opening of the third electrode.
摘要翻译：电子发射显示器包括彼此面对的第一和第二基板，形成在第一基板上的第一电极和电连接到第一电极的电子发射区域。第二电极放置在第一电极上，使得第二电极与第一电极电绝缘。第二电极具有用于暴露电子发射区域的多个开口。第三电极放置在第二电极上，使得第三电极与第二电极电绝缘。第三电极具有与第二电极的开口连通的开口。第二和第三电极被构造成满足以下条件：1.5 <= W 2 / W 1 <= 3.0其中W 1表示第二电极的每个开口的宽度，W 2表示第二电极的开口宽度第三电极。

7. 发明申请

US20070090750A1 Electron emission device and electron emission display using the same 审中-公开
标题翻译：电子发射器件和使用其的电子发射显示器
公开(公告)号：US20070090750A1
公开(公告)日：2007-04-26
申请号：US11580931
申请日：2006-10-16
申请人： Sang-Jo Lee , Chun-Gyoo Lee , Sang-Ho Jeon , Sang-Hyuck Ahn , Su-Bong Hong , Jong-Hoon Shin
发明人： Sang-Jo Lee , Chun-Gyoo Lee , Sang-Ho Jeon , Sang-Hyuck Ahn , Su-Bong Hong , Jong-Hoon Shin
IPC分类号： H01J63/04 , H01J1/62
CPC分类号： H01J29/467 , H01J31/127
摘要： An electron emission device includes a substrate with an effective area and a pad area placed external to the effective area. Cathode electrodes are formed on the substrate. Electron emission regions are formed at the cathode electrodes within the effective area. Gate electrodes are separately insulated from the cathode electrodes by interposing an insulating layer, and have opening portions to expose the electron emission regions. The respective gate electrodes have an effective portion located at the effective area with a first line width, and a pad portion located at the pad area with a second line width. When the line width subtracted from the first line width by the whole line width of the opening portions placed in the width direction of the effective portion is defined as an effective line width, the second line width is established to be larger than the effective line width.
摘要翻译：电子发射装置包括具有有效面积的衬底和放置在有效区域外部的焊盘区域。在基板上形成阴极电极。在有效区域内的阴极电极形成电子发射区域。栅电极通过插入绝缘层与阴极分离绝缘，并具有露出电子发射区的开口部分。相应的栅电极具有位于具有第一线宽的有效区域的有效部分，以及位于具有第二线宽度的焊盘区域处的焊盘部分。当从第一行宽减去沿有效部分的宽度方向的开口部分的整个线宽减去的线宽被定义为有效线宽时，第二线宽被确定为大于有效线宽。

8. 发明申请

US20070029917A1 Electron emission device and method for manufacturing the same 失效
标题翻译：电子发射装置及其制造方法
公开(公告)号：US20070029917A1
公开(公告)日：2007-02-08
申请号：US11394058
申请日：2006-03-29
申请人： Su-Bong Hong , Chun-Gyoo Lee , Sang-Jo Lee , Sang-Ho Jeon , Sang-Hyuck Ahn
发明人： Su-Bong Hong , Chun-Gyoo Lee , Sang-Jo Lee , Sang-Ho Jeon , Sang-Hyuck Ahn
IPC分类号： H01J1/62
CPC分类号： H01J1/304 , H01J9/025 , H01J29/04 , H01J31/127
摘要： An electron emission device includes a first substrate; a second substrate facing the first substrate and separated therefrom by a predetermined distance; cathode electrodes, each comprising first electrodes formed on the first substrate, and a plurality of second electrodes spaced apart from the first electrodes; electron emission regions formed on the plurality of second electrodes; resistance layers interconnecting the first electrodes and each of the plurality of second electrodes while surrounding the electron emission regions; an insulating layer positioned over the resistance layers and the cathode electrodes; and gate electrodes formed over the insulating layer.
摘要翻译：电子发射装置包括：第一基板; 面对所述第一基板的第二基板并与所述第二基板分离预定距离; 每个包括形成在第一基板上的第一电极和与第一电极间隔开的多个第二电极的阴极电极; 形成在所述多个第二电极上的电子发射区域; 电阻层，其在围绕所述电子发射区域的同时将所述第一电极和所述多个第二电极中的每一个互连; 位于所述电阻层和所述阴极上的绝缘层; 以及形成在绝缘层上的栅电极。

9. 发明申请

US20060113889A1 Electron emission device 失效
公开(公告)号：US20060113889A1
公开(公告)日：2006-06-01
申请号：US11283794
申请日：2005-11-22
申请人： Byong-Gon Lee , Sang-Jo Lee , Sang-Ho Jeon , Sang-Hyuck Ahn , Su-Bong Hong , Chun-Gyoo Lee
发明人： Byong-Gon Lee , Sang-Jo Lee , Sang-Ho Jeon , Sang-Hyuck Ahn , Su-Bong Hong , Chun-Gyoo Lee
IPC分类号： H01J63/04 , H01J1/62
CPC分类号： H01J3/022 , H01J29/467 , H01J29/481 , H01J63/02
摘要： An electron emission device includes first electrodes arranged on a substrate in a direction of the substrate, and an insulating layer arranged on an entire surface of the substrate and covering the first electrodes. Second electrodes are arranged on the insulating layer and are perpendicular to the first electrodes. Electron emission regions are connected to one of the first and the second electrodes. The lateral edges of the first electrodes and the lateral edges of the second electrodes respectively cross each other.

10. 发明授权

US07034448B2 Field emission display 失效
公开(公告)号：US07034448B2
公开(公告)日：2006-04-25
申请号：US10413445
申请日：2003-04-14
申请人： Chun-Gyoo Lee , Sang-Jo Lee , Yong-Soo Choi , Sang-Hyuck Ahn , Byong-Gon Lee , Ho-Su Han
发明人： Chun-Gyoo Lee , Sang-Jo Lee , Yong-Soo Choi , Sang-Hyuck Ahn , Byong-Gon Lee , Ho-Su Han
IPC分类号： H01J19/24
CPC分类号： H01J31/127
摘要： A field emission display includes a first substrate and a second substrate opposing one another with a predetermined gap therebetween. At least one gate electrode is formed on the first substrate. An insulation layer formed over the first substrate covering the gate electrode. Cathode electrodes are formed on the insulation layer and including field enhancing sections that expose the insulation layer corresponding to pixel regions. Electron emission sources formed over the cathode electrodes adjacent at least one side of the field enhancing sections. An illumination assembly is formed on the second substrate and realizes the display of images by electrons emitted from the electron emission sources.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式