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    • 1. 发明申请
    • SYSTEM AND METHOD OF MEASURING IRREGULARITY OF A GLASS SUBSTRATE
    • 测量玻璃基板不正常性的系统和方法
    • US20120133952A1
    • 2012-05-31
    • US13094711
    • 2011-04-26
    • Soon-Jong LeeBong-Joo WooByoung-Chan ParkSeong-Jin ChoiJae-Hoon Chung
    • Soon-Jong LeeBong-Joo WooByoung-Chan ParkSeong-Jin ChoiJae-Hoon Chung
    • G01B11/30
    • G01B11/306G01N21/896G01N2021/9513
    • A system and a method of measuring irregularity of a glass substrate using only a reflection light reflected by an upper surface of reflection lights reflected by the upper surface and a lower surface of the glass substrate are disclosed. The system includes a light source section configured to output a first light to the glass substrate and a screen. Here, the first light outputted from the light source section is reflected by an upper surface and a lower surface of the glass substrate, a first reflection light reflected by the upper surface of the glass substrate is inputted into the screen, a first line is formed on the screen in accordance with the input of the first reflection light, a second reflection light reflected by the lower surface of the glass substrate is inputted into the screen through the upper surface, a second line is formed on the screen in accordance with the input of the second reflection light, and the light source section and the screen are disposed on the basis of the glass substrate so that the lines are separated.
    • 公开了一种使用仅由反射光反射的反射光来测量玻璃基板的不规则性的系统和方法,该反射光由玻璃基板的上表面和下表面反射的反射光的上表面反射。 该系统包括被配置为将第一光输出到玻璃基板和屏幕的光源部。 这里,从光源部输出的第一光被玻璃基板的上表面和下表面反射,由玻璃基板的上表面反射的第一反射光被输入到屏幕中,形成第一线 在屏幕上根据第一反射光的输入,由玻璃基板的下表面反射的第二反射光通过上表面输入到屏幕中,根据输入在屏幕上形成第二行 的第二反射光,并且光源部分和屏幕被设置在玻璃基板的基础上,使得线分离。
    • 2. 发明授权
    • System and method of measuring irregularity of a glass substrate
    • 测量玻璃基板不规则性的系统和方法
    • US08351051B2
    • 2013-01-08
    • US13094711
    • 2011-04-26
    • Soon-Jong LeeBong-Joo WooByoung-Chan ParkSeong-Jin ChoiJae-Hoon Chung
    • Soon-Jong LeeBong-Joo WooByoung-Chan ParkSeong-Jin ChoiJae-Hoon Chung
    • G01B11/30G01N21/00
    • G01B11/306G01N21/896G01N2021/9513
    • A system and a method of measuring irregularity of a glass substrate using only a reflection light reflected by an upper surface of reflection lights reflected by the upper surface and a lower surface of the glass substrate are disclosed. The system includes a light source section configured to output a first light to the glass substrate and a screen. Here, the first light outputted from the light source section is reflected by an upper surface and a lower surface of the glass substrate, a first reflection light reflected by the upper surface of the glass substrate is inputted into the screen, a first line is formed on the screen in accordance with the input of the first reflection light, a second reflection light reflected by the lower surface of the glass substrate is inputted into the screen through the upper surface, a second line is formed on the screen in accordance with the input of the second reflection light, and the light source section and the screen are disposed on the basis of the glass substrate so that the lines are separated.
    • 公开了一种使用仅由反射光反射的反射光来测量玻璃基板的不规则性的系统和方法,该反射光由玻璃基板的上表面和下表面反射的反射光的上表面反射。 该系统包括被配置为将第一光输出到玻璃基板和屏幕的光源部。 这里,从光源部输出的第一光被玻璃基板的上表面和下表面反射,由玻璃基板的上表面反射的第一反射光被输入到屏幕中,形成第一线 在屏幕上根据第一反射光的输入,由玻璃基板的下表面反射的第二反射光通过上表面输入到屏幕中,根据输入在屏幕上形成第二行 的第二反射光,并且光源部分和屏幕被设置在玻璃基板的基础上,使得线分离。
    • 3. 发明申请
    • REAL TIME LEAK DETECTION SYSTEM OF PROCESS CHAMBER
    • 过程室实时泄漏检测系统
    • US20090229348A1
    • 2009-09-17
    • US12306140
    • 2007-06-27
    • Bong-Joo Woo
    • Bong-Joo Woo
    • G01M3/00G01J3/00
    • C23C16/4401G01N21/68H01J37/32935H01J37/32972H01L21/67069H01L21/67253
    • Provided is a technology for detecting a leak of a process chamber in real time generated from a semiconductor substrate manufacturing process using an apparatus using plasma in a vacuum state. The real time leak detection system of a process chamber can detect a leak through end point detection (EPD) whether spectrums of nitrogen, oxygen, argon, and so on, are generated in a plasma spectrum as external air is injected into the process chamber due to the leak, and determining occurrence of the leak from the process chamber through a helium leak detector on the basis of the detection signal, without shutdown of equipment. Therefore, when the leak occurs from the process chamber, its detection time can be reduced to improve productivity. In addition, cracks in the process chamber used in a high temperature HDP CVD process can be readily checked to prevent damage to the process chamber and accidents due to the damage.
    • 提供了一种用于使用在真空状态下使用等离子体的装置从半导体基板制造工艺产生的实时检测处理室泄漏的技术。 处理室的实时泄漏检测系统可以通过端点检测(EPD)来检测在等离子体光谱中是否产生氮,氧,氩等的光谱,因为外部空气被注入到处理室中 根据检测信号通过氦泄漏检测器确定来自处理室的泄漏的发生,而不关闭设备。 因此,当从处理室发生泄漏时,可以降低其检测时间以提高生产率。 此外,可以容易地检查在高温HDP CVD工艺中使用的处理室中的裂纹,以防止对处理室的损坏和由于损坏引起的事故。