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1. 发明申请

US20070041256A1 LAYOUT FOR EQUALIZER AND DATA LINE SENSE AMPLIFIER EMPLOYED IN A HIGH SPEED MEMORY DEVICE 有权
标题翻译：在高速存储器件中使用的均衡器和数据线检测放大器的布局
公开(公告)号：US20070041256A1
公开(公告)日：2007-02-22
申请号：US11383727
申请日：2006-05-16
申请人： Soo-Bong CHANG , Chi-Wook KIM
发明人： Soo-Bong CHANG , Chi-Wook KIM
IPC分类号： G11C7/00
CPC分类号： G11C7/1048 , G11C7/062 , G11C11/4091 , G11C11/4093
摘要： A memory device includes a memory cell array block including memory cells, a word line driver block adjacent the memory cell array block disposed in a direction in which word lines of the memory cells are arranged, a sense amplifier block adjacent the memory cell array block disposed in a direction in which bit lines of the memory cells are arranged, a conjunction block disposed at an intersection of the word line driver block and the sense amplifier block, an equalizer for equalizing a pair of local data lines, the equalizer disposed in the conjunction block, and a local data line sense amplifier configured to sense and amplify signals on a pair of local data lines, and having transistors of a first type disposed in the conjunction block and transistors of a second type disposed in the sense amplifier block.
摘要翻译：存储器件包括存储单元阵列块，存储单元阵列块，与沿着存储单元的字线排列的方向布置的存储单元阵列块相邻的字线驱动块，设置有存储单元阵列块的读出放大器块在布置存储单元的位线的方向上，设置在字线驱动块和读出放大器块的交叉点处的连接块，用于均衡一对本地数据线的均衡器，均衡器配置在一起块和本地数据线读出放大器，其被配置为感测和放大一对本地数据线上的信号，并且具有布置在连接块中的第一类型的晶体管和布置在读出放大器块中的第二类型的晶体管。

2. 发明申请

US20110090746A1 DEVICE AND METHOD GENERATING INTERNAL VOLTAGE IN SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：在半导体存储器件中产生内部电压的器件和方法
公开(公告)号：US20110090746A1
公开(公告)日：2011-04-21
申请号：US12978677
申请日：2010-12-27
申请人： Soo-Bong CHANG , Doo-Young KIM , Jung-Im HUH
发明人： Soo-Bong CHANG , Doo-Young KIM , Jung-Im HUH
IPC分类号： G11C5/14
CPC分类号： G11C5/147
摘要： A semiconductor memory device and a method of generating an internal voltage in the semiconductor memory device are provided. The semiconductor memory device includes a controller configured to activate a sensing enable signal when an active command is applied from outside, inactivate the sensing enable signal when a precharge command is applied, and output the sensing enable signal, and an array internal voltage generator configured to output an active array power supply voltage as an array power supply voltage when the sensing enable signal is activated, output an external array power supply voltage and a standby array power supply voltage as the array power supply voltage when the sensing enable signal is inactivated, and output the standby array power supply voltage alone as the array power supply voltage when the sensing enable signal is inactivated for at least a specific period.
摘要翻译：提供半导体存储器件和在半导体存储器件中产生内部电压的方法。半导体存储器件包括：控制器，被配置为当从外部施加有效命令时激活感测使能信号，当施加预充电命令时使感测使能信号失效，并输出感测使能信号;以及阵列内部电压发生器，被配置为当感测使能信号被激活时，输出有源阵列电源电压作为阵列电源电压，当感测使能信号被去激活时，输出外部阵列电源电压和备用阵列电源电压作为阵列电源电压;以及当感测使能信号在至少特定的时间段内被去激活时，单独输出备用阵列电源电压作为阵列电源电压。

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