专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08304272B2 Germanium photodetector 有权
标题翻译：锗光电探测器
公开(公告)号：US08304272B2
公开(公告)日：2012-11-06
申请号：US13024724
申请日：2011-02-10
申请人： Solomon Assefa , Jeehwan Kim , Jin-Hong Park , Yurii A. Vlasov
发明人： Solomon Assefa , Jeehwan Kim , Jin-Hong Park , Yurii A. Vlasov
IPC分类号： H01L21/00
CPC分类号： H01L31/1808 , H01L31/1085 , Y02E10/50
摘要： A method for forming a photodetector device includes forming an insulator layer on a substrate, forming a germanium (Ge) layer on the insulator layer and a portion of the substrate, forming a second insulator layer on the Ge layer, implanting n-type ions in the Ge layer, patterning the n-type Ge layer, forming a capping insulator layer on the second insulator layer and a portion of the first insulator layer, heating the device to crystallize the Ge layer resulting in an single crystalline n-type Ge layer, and forming electrodes electrically connected to the single crystalline n-type Ge layer.
摘要翻译：一种形成光检测器件的方法包括在基片上形成绝缘体层，在绝缘体层和基片的一部分上形成锗（Ge）层，在Ge层上形成第二绝缘体层，将n型离子注入 Ge层，图案化n型Ge层，在第二绝缘体层上形成覆盖绝缘体层和第一绝缘体层的一部分，加热该器件以使Ge层结晶，得到单晶n型Ge层，以及形成电连接到单晶n型Ge层的电极。

2. 发明申请

US20120001283A1 Germanium Photodetector 有权
标题翻译：锗光检测器
公开(公告)号：US20120001283A1
公开(公告)日：2012-01-05
申请号：US13024724
申请日：2011-02-10
申请人： Solomon Assefa , Jeehwan Kim , Jin-Hong Park , Yurii A. Vlasov
发明人： Solomon Assefa , Jeehwan Kim , Jin-Hong Park , Yurii A. Vlasov
IPC分类号： H01L31/028 , H01L31/18
CPC分类号： H01L31/1808 , H01L31/1085 , Y02E10/50
摘要： A method for forming a photodetector device includes forming an insulator layer on a substrate, forming a germanium (Ge) layer on the insulator layer and a portion of the substrate, forming a second insulator layer on the Ge layer, implanting n-type ions in the Ge layer, patterning the n-type Ge layer, forming a capping insulator layer on the second insulator layer and a portion of the first insulator layer, heating the device to crystallize the Ge layer resulting in an single crystalline n-type Ge layer, and forming electrodes electrically connected to the single crystalline n-type Ge layer.
摘要翻译：一种形成光检测器件的方法包括在基片上形成绝缘体层，在绝缘体层和基片的一部分上形成锗（Ge）层，在Ge层上形成第二绝缘体层，将n型离子注入 Ge层，图案化n型Ge层，在第二绝缘体层上形成覆盖绝缘体层和第一绝缘体层的一部分，加热该器件以使Ge层结晶，得到单晶n型Ge层，以及形成电连接到单晶n型Ge层的电极。

3. 发明申请

US20120288992A1 Germanium Photodetector 有权
标题翻译：锗光检测器
公开(公告)号：US20120288992A1
公开(公告)日：2012-11-15
申请号：US13556597
申请日：2012-07-24
申请人： Solomon Assefa , Jeehwan Kim , Jin-Hong Park , Yurii A. Vlasov
发明人： Solomon Assefa , Jeehwan Kim , Jin-Hong Park , Yurii A. Vlasov
IPC分类号： H01L31/18
CPC分类号： H01L31/1808 , H01L31/1085 , Y02E10/50
摘要： A method for forming a photodetector device includes forming an insulator layer on a substrate, forming a germanium (Ge) layer on the insulator layer and a portion of the substrate, forming a second insulator layer on the Ge layer, patterning the Ge layer, forming a capping insulator layer on the second insulator layer and a portion of the first insulator layer, heating the device to crystallize the Ge layer resulting in an single crystalline Ge layer, implanting n-type ions in the single crystalline Ge layer, heating the device to activate n-type ions in the single crystalline Ge layer, and forming electrodes electrically connected to the single crystalline n-type Ge layer.
摘要翻译：一种形成光检测器件的方法包括：在基片上形成绝缘体层，在绝缘体层和一部分基底上形成锗（Ge）层，在Ge层上形成第二绝缘层，构图Ge层，形成在所述第二绝缘体层上的封盖绝缘体层和所述第一绝缘体层的一部分，加热所述器件以使所述Ge层结晶，得到单晶Ge层，在所述单晶Ge层中注入n型离子，将所述器件加热至在单晶Ge层中激活n型离子，以及形成电连接到单晶n型Ge层的电极。

4. 发明授权

US08614116B2 Germanium photodetector 有权
标题翻译：锗光电探测器
公开(公告)号：US08614116B2
公开(公告)日：2013-12-24
申请号：US13556597
申请日：2012-07-24
申请人： Solomon Assefa , Jeehwan Kim , Jin-Hong Park , Yurii A. Vlasov
发明人： Solomon Assefa , Jeehwan Kim , Jin-Hong Park , Yurii A. Vlasov
IPC分类号： H01L21/00
CPC分类号： H01L31/1808 , H01L31/1085 , Y02E10/50
摘要： A method for forming a photodetector device includes forming an insulator layer on a substrate, forming a germanium (Ge) layer on the insulator layer and a portion of the substrate, forming a second insulator layer on the Ge layer, patterning the Ge layer, forming a capping insulator layer on the second insulator layer and a portion of the first insulator layer, heating the device to crystallize the Ge layer resulting in an single crystalline Ge layer, implanting n-type ions in the single crystalline Ge layer, heating the device to activate n-type ions in the single crystalline Ge layer, and forming electrodes electrically connected to the single crystalline n-type Ge layer.
摘要翻译：一种形成光检测器件的方法包括：在基片上形成绝缘体层，在绝缘体层和一部分基底上形成锗（Ge）层，在Ge层上形成第二绝缘层，构图Ge层，形成在所述第二绝缘体层上的封盖绝缘体层和所述第一绝缘体层的一部分，加热所述器件以使所述Ge层结晶，得到单晶Ge层，在所述单晶Ge层中注入n型离子，将所述器件加热至在单晶Ge层中激活n型离子，以及形成电连接到单晶n型Ge层的电极。

5. 发明申请

US20120193687A1 REDUCED S/D CONTACT RESISTANCE OF III-V MOSFET USING LOW TEMPERATURE METAL-INDUCED CRYSTALLIZATION OF n+ Ge 有权
标题翻译：使用n + Ge低温金属诱导结晶的III-V MOSFET的降低的S / D接触电阻
公开(公告)号：US20120193687A1
公开(公告)日：2012-08-02
申请号：US13017127
申请日：2011-01-31
申请人： Jeehwan Kim , Jin-Hong Park , Devendra Sadana , Kuen-Ting Shiu
发明人： Jeehwan Kim , Jin-Hong Park , Devendra Sadana , Kuen-Ting Shiu
IPC分类号： H01L29/772 , H01L21/28
CPC分类号： H01L29/20 , H01L21/26513 , H01L21/28575 , H01L29/0847 , H01L29/267 , H01L29/41783 , H01L29/452 , H01L29/66522 , H01L29/66628 , H01L29/78
摘要： Embodiments of this invention provide a method to fabricate an electrical contact. The method includes providing a substrate of a compound Group III-V semiconductor material having at least one electrically conducting doped region adjacent to a surface of the substrate. The method further includes fabricating the electrical contact to the at least one electrically conducting doped region by depositing a single crystal layer of germanium over the surface of the substrate so as to at least partially overlie the at least one electrically conducting doped region, converting the single crystal layer of germanium into a layer of amorphous germanium by implanting a dopant, forming a metal layer over exposed surfaces of the amorphous germanium layer, and performing a metal-induced crystallization (MIC) process on the amorphous germanium layer having the overlying metal layer to convert the amorphous germanium layer to a crystalline germanium layer and to activate the implanted dopant. The electrical contact can be a source or a drain contact of a transistor.
摘要翻译：本发明的实施例提供一种制造电接触的方法。该方法包括提供化合物III-V族半导体材料的衬底，其具有与衬底的表面相邻的至少一个导电掺杂区域。该方法还包括通过在衬底的表面上沉积锗的单晶层以至少部分地覆盖在至少一个导电掺杂区域上来将至少一个导电掺杂区域的电接触制造到该至少一个导电掺杂区域，通过注入掺杂剂，在非晶锗层的暴露表面上形成金属层，并对具有上层金属层的非晶锗层进行金属诱导结晶（MIC）工艺，将锗的晶体层分解成无定形锗层，将无定形锗层转化为结晶锗层并激活注入的掺杂剂。电接触可以是晶体管的源极或漏极接触。

6. 发明授权

US08536043B2 Reduced S/D contact resistance of III-V MOSFET using low temperature metal-induced crystallization of n+ Ge 有权
标题翻译：使用n + Ge的低温金属诱导结晶降低了III-V MOSFET的S / D接触电阻
公开(公告)号：US08536043B2
公开(公告)日：2013-09-17
申请号：US13017127
申请日：2011-01-31
申请人： Jeehwan Kim , Jin-Hong Park , Devendra Sadana , Kuen-Ting Shiu
发明人： Jeehwan Kim , Jin-Hong Park , Devendra Sadana , Kuen-Ting Shiu
IPC分类号： H01L21/28
CPC分类号： H01L29/20 , H01L21/26513 , H01L21/28575 , H01L29/0847 , H01L29/267 , H01L29/41783 , H01L29/452 , H01L29/66522 , H01L29/66628 , H01L29/78
摘要： Embodiments of this invention provide a method to fabricate an electrical contact. The method includes providing a substrate of a compound Group III-V semiconductor material having at least one electrically conducting doped region adjacent to a surface of the substrate. The method further includes fabricating the electrical contact to the at least one electrically conducting doped region by depositing a single crystal layer of germanium over the surface of the substrate so as to at least partially overlie the at least one electrically conducting doped region, converting the single crystal layer of germanium into a layer of amorphous germanium by implanting a dopant, forming a metal layer over exposed surfaces of the amorphous germanium layer, and performing a metal-induced crystallization (MIC) process on the amorphous germanium layer having the overlying metal layer to convert the amorphous germanium layer to a crystalline germanium layer and to activate the implanted dopant. The electrical contact can be a source or a drain contact of a transistor.
摘要翻译：本发明的实施例提供一种制造电接触的方法。该方法包括提供化合物III-V族半导体材料的衬底，其具有与衬底的表面相邻的至少一个导电掺杂区域。该方法还包括通过在衬底的表面上沉积锗的单晶层以至少部分地覆盖在至少一个导电掺杂区域上来将至少一个导电掺杂区域的电接触制造到该至少一个导电掺杂区域，通过注入掺杂剂，在非晶锗层的暴露表面上形成金属层，并对具有上覆金属层的非晶锗层进行金属诱导结晶（MIC）工艺，将锗的晶体层分解成无定形锗层，将无定形锗层转化为结晶锗层并激活注入的掺杂剂。电接触可以是晶体管的源极或漏极接触。

7. 发明申请

US20100190340A1 Methods of forming fine patterns using a nanoimprint lithography 失效
标题翻译：使用纳米压印光刻形成精细图案的方法
公开(公告)号：US20100190340A1
公开(公告)日：2010-07-29
申请号：US12657750
申请日：2010-01-27
申请人： Jeong-Hoon Lee , Jeong-Ho Yeo , Joo-On Park , In-Sung Kim , Doo-Hoon Goo , Jin-Hong Park , Chang-Min Park
发明人： Jeong-Hoon Lee , Jeong-Ho Yeo , Joo-On Park , In-Sung Kim , Doo-Hoon Goo , Jin-Hong Park , Chang-Min Park
IPC分类号： H01L21/306 , B29C43/00 , C23F1/00
CPC分类号： G03F7/0002 , B29C43/003 , B29C2043/025 , B82Y10/00 , B82Y40/00
摘要： In a method of forming fine patterns, a photocurable coating layer is formed on a substrate. A first surface of a template makes contact with the photocurable coating layer. The first surface of the template includes at least two first patterns having a first dispersion degree of sizes, and at least one portion of the first surface of the template includes a photo attenuation member. A light is irradiated onto the photocurable coating layer through the template to form a cured coating layer including second patterns having a second dispersion degree of sizes. The second patterns are generated from the first patterns and the second dispersion degree is less than the first dispersion degree. The template is separate from the cured coating layer. A size dispersion degree of the patterns used in a nanoimprint lithography process may be adjusted by the light attenuation member, so that the fine patterns may be formed to have an improved size dispersion degree.
摘要翻译：在形成精细图案的方法中，在基板上形成光固化涂层。模板的第一表面与光固化涂层接触。模板的第一表面包括具有第一分散度大小的至少两个第一图案，并且模板的第一表面的至少一部分包括光衰减构件。通过模板将光照射到可光固化涂层上，以形成具有第二分散度尺寸的第二图案的固化涂层。从第一图案生成第二图案，第二色散度小于第一色散度。模板与固化涂层分开。可以通过光衰减部件调整在纳米压印光刻工艺中使用的图案的尺寸分散度，使得精细图案可以形成为具有改进的尺寸分散度。

8. 发明申请

US20060032481A1 Method for determining amount of fuel injection in engine system 失效
标题翻译：确定发动机系统燃油喷射量的方法
公开(公告)号：US20060032481A1
公开(公告)日：2006-02-16
申请号：US11199920
申请日：2005-08-08
申请人： Jin-Hong Park
发明人： Jin-Hong Park
IPC分类号： F02D41/18
CPC分类号： F02D41/18 , F02D41/22 , F02D2200/1012
摘要： Determining a fuel injection amount of an engine system having a crank sensor and airflow sensor includes computing a speed change of engine revolutions per minute and computing a speed change of an intake-air amount. Comparing the speed change of the engine rpm and the speed change of the intake-air amount with reference values, and if vibration and reverse-flow are determined to occur in the intake manifold, correcting the intake-air amount into the present engine speed and computing the present intake-air amount. The fuel injection amount is then determined by using the above computed intake-air amount. This improves the accuracy of determining the credible range of the airflow sensor and increases the range using the airflow sensor.
摘要翻译：确定具有曲轴传感器和气流传感器的发动机系统的燃料喷射量包括计算每分钟发动机转数的速度变化并计算进气量的速度变化。比较发动机转速的变化速度和进气量的速度变化与参考值，并且如果确定在进气歧管中发生振动和反向流量，则将进气量校正为当前发动机转速，以及计算当前的进气量。然后通过使用上述计算出的进气量来确定燃料喷射量。这提高了确定气流传感器的可信范围的精度，并使用气流传感器增加了范围。

9. 发明申请

US20160143121A1 EXTREME ULTRAVIOLET LIGHT SOURCE DEVICE AND METHOD OF GENERATING EXTREME ULTRA-VIOLET LIGHT 有权
标题翻译：极光紫外线光源装置及其产生超极紫外光的方法
公开(公告)号：US20160143121A1
公开(公告)日：2016-05-19
申请号：US14817762
申请日：2015-08-04
申请人： Seung-Koo Lee , In-Sung Kim , Jin-Hong Park
发明人： Seung-Koo Lee , In-Sung Kim , Jin-Hong Park
IPC分类号： H05G2/00 , B05B17/06 , G03F7/20 , G01V8/12 , G21K1/06
CPC分类号： H05G2/006 , B05B17/06 , B05B17/0607 , G01V8/12 , G03F7/70033 , G21K1/067 , H05G2/003 , H05G2/008
摘要： An extreme ultraviolet (EUV) light source device includes a source droplet generator for generating source droplets as a target source for generating extreme ultraviolet (EUV) light and for injecting the source droplets to a collector, a light irradiator for directing a detection light to an injection path of the source droplets, a light detector for detecting the detection light blocked by the source droplet, and a source droplet controller electrically connected to the light detector and the source droplet generator for analyzing the detection light to determine whether a satellite of the source droplet is generated or to determine a size of the generated satellite and for controlling a formation of a stream of source droplets based on the determination result.
摘要翻译：一种极紫外（EUV）光源装置包括：源液滴发生器，用于产生源液滴作为产生极紫外（EUV）光的目标光源，并将源液滴注入收集器;光照射器，用于将检测光引导到源液滴的注入路径，用于检测由源液滴阻挡的检测光的光检测器，以及电连接到光检测器和源液滴发生器的源液滴控制器，用于分析检测光，以确定源的卫星产生液滴或确定产生的卫星的尺寸并且用于基于确定结果控制源液滴流的形成。

10. 发明申请

US20080311308A1 Composition for Functional Coatings, Film Formed Therefrom and Method for Forming the Composition and the Film 审中-公开
标题翻译：功能性涂料的组合物，其形成的膜及其组合物和膜的形成方法
公开(公告)号：US20080311308A1
公开(公告)日：2008-12-18
申请号：US11659213
申请日：2004-08-13
申请人： Hae-Wook Lee , Jin-Hong Park
发明人： Hae-Wook Lee , Jin-Hong Park
IPC分类号： C04B14/00 , C08K5/17 , C08J3/28 , C08F4/32 , C08F2/48 , C08L33/02 , C08F2/54 , C08F2/46 , C04B14/30
CPC分类号： C08F2/48 , C08F2/44 , C08F2/46 , C08K3/22 , C09D5/24 , C09D7/62 , C09D7/67 , C09D7/68
摘要： The present invention relates to compositions for functional films, and more particularly to compositions for functional films such as a heat ray screening film compatible with hydrolic or alcoholic and anti-hydrolic resin binder, a near infrared screening film, a chrominance correcting film, a conductive film, a magnetic film, a ferromagnetic film, a dielectric film, a ferroelectric film, an electrochromic film, an electroluminescence film, an insulating film, a reflecting film, a reflection preventing film, a catalyst film, a photocatalyst film, a light selectively absorbing film, a hard film, and a heat resisting film, films formed therefrom, and a method of forming the compositions and the films.
摘要翻译：本发明涉及功能性膜用组合物，更具体地说，涉及功能膜用组合物，例如与水溶性或醇类和抗水性树脂粘合剂相容的热线屏蔽膜，近红外屏蔽膜，色度校正膜，导电性膜，磁性膜，铁磁性膜，电介质膜，铁电体膜，电致变色膜，电致发光膜，绝缘膜，反射膜，防反射膜，催化剂膜，光催化剂膜，选择性地吸收膜，硬膜和耐热膜，由其形成的膜，以及形成组合物和膜的方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式