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    • 3. 发明授权
    • Method of manufacturing semiconductor device
    • 制造半导体器件的方法
    • US08017482B2
    • 2011-09-13
    • US12974819
    • 2010-12-21
    • Toshikazu MatsuiYasuyuki SayamaHiroki EtoTakumi Hosoya
    • Toshikazu MatsuiYasuyuki SayamaHiroki EtoTakumi Hosoya
    • H01L21/336
    • H01L29/66734H01L21/26586H01L29/42376H01L29/7397
    • The invention provides a method of manufacturing a semiconductor device at low cost in which the gate insulation film having a trench structure is not damaged by arsenic ions when the emitter layer or the like is formed and the insulation breakdown voltage is enhanced. A gate electrode made of polysilicon formed in a trench is thermally oxidized in a high temperature furnace or the like to form a thick polysilicon thermal oxide film on the gate electrode. Impurity ions are then ion-implanted to form an N type semiconductor layer that is to be an emitter layer or the like. At this time, the polysilicon thermal oxide film is formed thicker than the projected range Rp of impurity ions in the silicon oxide film for forming the N type semiconductor layer as the emitter layer or the like by ion implantation. This prevents a gate insulation film between the gate electrode and the N type semiconductor layer from being damaged by the impurity ions.
    • 本发明提供了一种以低成本制造半导体器件的方法,其中当形成发射极层等时,具有沟槽结构的栅极绝缘膜不被砷离子损坏并且绝缘击穿电压增强。 在沟槽中形成的由多晶硅形成的栅电极在高温炉等中被热氧化,以在栅电极上形成厚的多晶硅热氧化膜。 然后将杂质离子离子注入以形成作为发射极层等的N型半导体层。 此时,通过离子注入,多晶硅热氧化膜形成得比用于形成N型半导体层的氧化硅膜中的杂质离子的投射范围Rp比发射极层等厚。 这防止了栅电极和N型半导体层之间的栅极绝缘膜被杂质离子损坏。