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1. 发明授权

US08279665B2 Memory cell and select element 有权
标题翻译：存储单元和选择元素
公开(公告)号：US08279665B2
公开(公告)日：2012-10-02
申请号：US12949047
申请日：2010-11-18
申请人： Siegfried Friedrich Karg , Gerhard Ingmar Meijer
发明人： Siegfried Friedrich Karg , Gerhard Ingmar Meijer
IPC分类号： G11C11/00
CPC分类号： G11C13/0011 , H01L45/085 , H01L45/1233 , H01L45/1246 , H01L45/1266 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/146 , H01L45/1683 , H01L45/1691
摘要： In accordance with an aspect of the present disclosure, a memory cell (1) or select element is provided. The element includes an ion conductor element (3) formed of a ion conductor material with mobile metal ions, a first electrically conducing electrode (4) in electrical contact with the ion conductor element, and a second electrically conducting electrode (6) in electrical contact with the ion conductor element, so that the memory cell or select element is programmable by applying an electrical voltage between the first electrode and the second electrode that causes the metal ions to be influenced so that an electrical resistance across the ion conductor element is caused to vary, for example because a metallic protrusion (7) is caused to grow or decompose. In contrast to prior art approaches, the ion conductor element has a shape that is asymmetrical with respect to an exchange of the first electrode (4) and the second electrode (6) for each other.
摘要翻译：根据本公开的一个方面，提供了存储单元（1）或选择元件。该元件包括由离子导体材料与移动金属离子形成的离子导体元件（3），与离子导体元件电接触的第一导电电极（4）和电接触的第二导电电极（6）通过在第一电极和第二电极之间施加电压来使存储单元或选择元件可编程，从而使金属离子受到影响，从而使离子导体元件的电阻达到变化，例如因为使金属突起（7）生长或分解。与现有技术的方法相比，离子导体元件具有相对于第一电极（4）和第二电极（6）彼此交换的不对称的形状。

2. 发明申请

US20090179245A1 MEMORY CELL AND MEMORY DEVICE 有权
标题翻译：存储单元和存储器件
公开(公告)号：US20090179245A1
公开(公告)日：2009-07-16
申请号：US12353315
申请日：2009-01-14
申请人： Siegfried Friedrich Karg , Gerhard Ingmar Meijer
发明人： Siegfried Friedrich Karg , Gerhard Ingmar Meijer
IPC分类号： H01L29/82 , H01L29/94
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/147
摘要： A programmable magnetoresistive memory cell. The memory cell has a magnetic element that includes a first and a second ferromagnetic layer. The first and second ferromagnetic layers are separated by a non-ferromagnetic and preferably electrically insulating spacer layer. The data bit is read out by measuring the electrical resistance across the magnetic element. The memory cell further includes: a third ferromagnetic layer having a well-defined magnetization direction and a resistance switching material having a carrier density. The carrier density can be altered by causing an ion concentration to become altered by means of an applied electrical voltage signal. Thus, the carrier density can be switched between a first and second state.
摘要翻译：可编程磁阻存储单元。存储单元具有包括第一和第二铁磁层的磁性元件。第一铁磁层和第二铁磁层由非铁磁性并且优选电绝缘间隔层分开。通过测量磁性元件两端的电阻来读出数据位。存储单元还包括：具有明确限定的磁化方向的第三铁磁层和具有载流子密度的电阻切换材料。可以通过使施加的电压信号使离子浓度变化而改变载流子密度。因此，可以在第一和第二状态之间切换载流子密度。

3. 发明授权

US07961493B2 Programmable device 有权
标题翻译：可编程器件
公开(公告)号：US07961493B2
公开(公告)日：2011-06-14
申请号：US12478316
申请日：2009-06-04
申请人： Siegfried Friedrich Karg , Gerhard Ingmar Meijer
发明人： Siegfried Friedrich Karg , Gerhard Ingmar Meijer
IPC分类号： G11C11/22
CPC分类号： H01L27/226 , G11C11/161 , G11C11/1675 , H01L29/66984 , H01L43/08 , H03K19/177
摘要： A programmable device including a source-drain-gate structure. The device includes two programming electrodes and an antiferromagnetic multiferroic material between the two programming electrodes for switching the spontaneous polarization between a first spontaneous polarization direction and a second spontaneous polarization direction. The programmable device further includes a ferromagnetic material, which is in immediate contact with the multiferroic material. Magnetization of the ferromagnetic material is switchable by a transition between the first switching state and the second switching state of the multiferroic material by an exchange coupling between electronic states of the multiferroic material and the ferromagnetic material. The programmable device also includes means for determining a direction of the magnetization of the ferromagnetic material. A spin valve effect is used for causing an electrical resistance between the source and the drain electrode.
摘要翻译：一种包括源极 - 漏极 - 栅极结构的可编程器件。该装置包括两个编程电极和两个编程电极之间的反铁磁性多铁性材料，用于在第一自发极化方向和第二自发极化方向之间切换自发极化。可编程装置还包括与多铁性材料立即接触的铁磁材料。铁磁材料的磁化可以通过多铁材料的电子状态与铁磁材料之间的交换耦合，通过多铁材料的第一开关状态和第二开关状态之间的转变来切换。可编程装置还包括用于确定铁磁材料的磁化方向的装置。自旋阀效应用于引起源极和漏极之间的电阻。

4. 发明授权

US08405124B2 Logic element, and integrated circuit or field programmable gate array 有权
标题翻译：逻辑元件，集成电路或现场可编程门阵列
公开(公告)号：US08405124B2
公开(公告)日：2013-03-26
申请号：US12350329
申请日：2009-01-08
申请人： Siegfried Friedrich Karg , Gerhard Ingmar Meijer
发明人： Siegfried Friedrich Karg , Gerhard Ingmar Meijer
IPC分类号： H01L29/66
CPC分类号： H03K19/1778 , H01L27/11803 , H03K19/17728
摘要： A complementary logic element including first and second transistor elements. The first and second gate electrodes of the two transistor elements are electrically parallel to form a common gate. Both the coupling layers of the first and the second transistor element include a resistance switching material, a conductivity of which may be altered by causing an ion concentration to alter if an electrical voltage signal of an appropriate polarity is applied. The first and second transistor elements also include an ion conductor layer that is capable of accepting ions from the coupling layer and of releasing ions into the coupling layer. The coupling layers and ion conductor layers are such that the application of an electrical signal of a given polarity to the gate enhances the electrical conductivity of the first coupling layer and diminishes the electrical conductivity of the second, or vice versa.
摘要翻译：互补逻辑元件，包括第一和第二晶体管元件。两个晶体管元件的第一和第二栅极电极并联以形成公共栅极。第一和第二晶体管元件的耦合层都包括电阻切换材料，如果施加了适当极性的电压信号，其电导率可以通过使离子浓度改变而改变。第一和第二晶体管元件还包括能够接受来自耦合层的离子并将离子释放到耦合层中的离子导体层。耦合层和离子导体层使得向栅极施加给定极性的电信号增强了第一耦合层的电导率并且减小了第二耦合层的电导率，反之亦然。

5. 发明授权

US08139389B2 Programmable device 有权
标题翻译：可编程器件
公开(公告)号：US08139389B2
公开(公告)日：2012-03-20
申请号：US13040429
申请日：2011-03-04
申请人： Siegfried Friedrich Karg , Gerhard Ingmar Meijer
发明人： Siegfried Friedrich Karg , Gerhard Ingmar Meijer
IPC分类号： G11C11/22
CPC分类号： H01L27/226 , G11C11/161 , G11C11/1675 , H01L29/66984 , H01L43/08 , H03K19/177
摘要： A programmable device including a source-drain-gate structure. The device includes two programming electrodes and an antiferromagnetic multiferroic material between the two programming electrodes for switching the spontaneous polarization between a first spontaneous polarization direction and a second spontaneous polarization direction. The programmable device further includes a ferromagnetic material, which is in immediate contact with the multiferroic material. Magnetization of the ferromagnetic material is switchable by a transition between the first switching state and the second switching state of the multiferroic material by an exchange coupling between electronic states of the multiferroic material and the ferromagnetic material. The programmable device also includes means for determining a direction of the magnetization of the ferromagnetic material. A spin valve effect is used for causing an electrical resistance between the source and the drain electrode.
摘要翻译：一种包括源极 - 漏极 - 栅极结构的可编程器件。该装置包括两个编程电极和两个编程电极之间的反铁磁性多铁性材料，用于在第一自发极化方向和第二自发极化方向之间切换自发极化。可编程装置还包括与多铁性材料立即接触的铁磁材料。铁磁材料的磁化可以通过多铁材料的电子状态与铁磁材料之间的交换耦合，通过多铁材料的第一开关状态和第二开关状态之间的转变来切换。可编程装置还包括用于确定铁磁材料的磁化方向的装置。自旋阀效应用于引起源极和漏极之间的电阻。

6. 发明申请

US20110149648A1 PROGRAMMABLE DEVICE 有权
标题翻译：可编程器件
公开(公告)号：US20110149648A1
公开(公告)日：2011-06-23
申请号：US13040429
申请日：2011-03-04
申请人： Siegfried Friedrich Karg , Gerhard Ingmar Meijer
发明人： Siegfried Friedrich Karg , Gerhard Ingmar Meijer
IPC分类号： G11C11/14 , H01L29/82
CPC分类号： H01L27/226 , G11C11/161 , G11C11/1675 , H01L29/66984 , H01L43/08 , H03K19/177
摘要： A programmable device including a source-drain-gate structure. The device includes two programming electrodes and an antiferromagnetic multiferroic material between the two programming electrodes for switching the spontaneous polarization between a first spontaneous polarization direction and a second spontaneous polarization direction. The programmable device further includes a ferromagnetic material, which is in immediate contact with the multiferroic material. Magnetization of the ferromagnetic material is switchable by a transition between the first switching state and the second switching state of the multiferroic material by an exchange coupling between electronic states of the multiferroic material and the ferromagnetic material. The programmable device also includes means for determining a direction of the magnetization of the ferromagnetic material. A spin valve effect is used for causing an electrical resistance between the source and the drain electrode.
摘要翻译：一种包括源极 - 漏极 - 栅极结构的可编程器件。该装置包括两个编程电极和两个编程电极之间的反铁磁性多铁性材料，用于在第一自发极化方向和第二自发极化方向之间切换自发极化。可编程装置还包括与多铁性材料立即接触的铁磁材料。铁磁材料的磁化可以通过多铁材料的电子状态与铁磁材料之间的交换耦合，通过多铁材料的第一开关状态和第二开关状态之间的转变来切换。可编程装置还包括用于确定铁磁材料的磁化方向的装置。自旋阀效应用于引起源极和漏极之间的电阻。

7. 发明授权

US07825486B2 Memory cell and memory device 有权
标题翻译：存储单元和存储器件
公开(公告)号：US07825486B2
公开(公告)日：2010-11-02
申请号：US12353315
申请日：2009-01-14
申请人： Siegfried Friedrich Karg , Gerhard Ingmar Meijer
发明人： Siegfried Friedrich Karg , Gerhard Ingmar Meijer
IPC分类号： H01L43/10
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/147
摘要： A programmable magnetoresistive memory cell. The memory cell has a magnetic element that includes a first and a second ferromagnetic layer. The first and second ferromagnetic layers are separated by a non-ferromagnetic and preferably electrically insulating spacer layer. The data bit is read out by measuring the electrical resistance across the magnetic element. The memory cell further includes: a third ferromagnetic layer having a well-defined magnetization direction and a resistance switching material having a carrier density. The carrier density can be altered by causing an ion concentration to become altered by means of an applied electrical voltage signal. Thus, the carrier density can be switched between a first and second state.
摘要翻译：可编程磁阻存储单元。存储单元具有包括第一和第二铁磁层的磁性元件。第一铁磁层和第二铁磁层由非铁磁性并且优选电绝缘间隔层分开。通过测量磁性元件两端的电阻来读出数据位。存储单元还包括：具有明确限定的磁化方向的第三铁磁层和具有载流子密度的电阻切换材料。可以通过使施加的电压信号使离子浓度变化而改变载流子密度。因此，可以在第一和第二状态之间切换载流子密度。

8. 发明申请

US20090174430A1 LOGIC ELEMENT, AND INTEGRATED CIRCUIT OR FIELD PROGRAMMABLE GATE ARRAY 有权
标题翻译：逻辑元件和集成电路或现场可编程门阵列
公开(公告)号：US20090174430A1
公开(公告)日：2009-07-09
申请号：US12350329
申请日：2009-01-08
申请人： Siegfried Friedrich Karg , Gerhard Ingmar Meijer
发明人： Siegfried Friedrich Karg , Gerhard Ingmar Meijer
IPC分类号： H03K19/177 , H03K19/0944
CPC分类号： H03K19/1778 , H01L27/11803 , H03K19/17728
摘要： A complementary logic element including first and second transistor elements. The first and second gate electrodes of the two transistor elements are electrically parallel to form a common gate. Both the coupling layers of the first and the second transistor element include a resistance switching material, a conductivity of which may be altered by causing an ion concentration to alter if an electrical voltage signal of an appropriate polarity is applied. The first and second transistor elements also include an ion conductor layer that is capable of accepting ions from the coupling layer and of releasing ions into the coupling layer. The coupling layers and ion conductor layers are such that the application of an electrical signal of a given polarity to the gate enhances the electrical conductivity of the first coupling layer and diminishes the electrical conductivity of the second, or vice versa.
摘要翻译：互补逻辑元件，包括第一和第二晶体管元件。两个晶体管元件的第一和第二栅极电极并联以形成公共栅极。第一和第二晶体管元件的耦合层都包括电阻切换材料，如果施加了适当极性的电压信号，其电导率可以通过使离子浓度改变而改变。第一和第二晶体管元件还包括能够接受来自耦合层的离子并将离子释放到耦合层中的离子导体层。耦合层和离子导体层使得向栅极施加给定极性的电信号增强了第一耦合层的电导率并且减小了第二耦合层的电导率，反之亦然。

9. 发明申请

US20110120856A1 Memory Cell and Select Element 有权
标题翻译：内存单元格和选择元素
公开(公告)号：US20110120856A1
公开(公告)日：2011-05-26
申请号：US12949047
申请日：2010-11-18
申请人： Siegfried Friedrich Karg , Gerhard Ingmar Meijer
发明人： Siegfried Friedrich Karg , Gerhard Ingmar Meijer
IPC分类号： C25B15/02
CPC分类号： G11C13/0011 , H01L45/085 , H01L45/1233 , H01L45/1246 , H01L45/1266 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/146 , H01L45/1683 , H01L45/1691
摘要： In accordance with an aspect of the present disclosure, a memory cell (1) or select element is provided. The element includes an ion conductor element (3) formed of a ion conductor material with mobile metal ions, a first electrically conducing electrode (4) in electrical contact with the ion conductor element, and a second electrically conducting electrode (6) in electrical contact with the ion conductor element, so that the memory cell or select element is programmable by applying an electrical voltage between the first electrode and the second electrode that causes the metal ions to be influenced so that an electrical resistance across the ion conductor element is caused to vary, for example because a metallic protrusion (7) is caused to grow or decompose. In contrast to prior art approaches, the ion conductor element has a shape that is asymmetrical with respect to an exchange of the first electrode (4) and the second electrode (6) for each other.
摘要翻译：根据本公开的一个方面，提供了存储单元（1）或选择元件。元件包括由离子导体材料与移动金属离子形成的离子导体元件（3），与离子导体元件电接触的第一导电电极（4）和电接触的第二导电电极（6）通过在第一电极和第二电极之间施加电压来使存储单元或选择元件可编程，从而使金属离子受到影响，从而使离子导体元件的电阻达到变化，例如因为使金属突起（7）生长或分解。与现有技术的方法相比，离子导体元件具有相对于第一电极（4）和第二电极（6）彼此交换的不对称的形状。

10. 发明申请

US20090302886A1 PROGRAMMABLE DEVICE 有权
标题翻译：可编程器件
公开(公告)号：US20090302886A1
公开(公告)日：2009-12-10
申请号：US12478316
申请日：2009-06-04
申请人： Siegfried Friedrich Karg , Gerhard Ingmar Meijer
发明人： Siegfried Friedrich Karg , Gerhard Ingmar Meijer
IPC分类号： H03K19/173 , H01L29/00
CPC分类号： H01L27/226 , G11C11/161 , G11C11/1675 , H01L29/66984 , H01L43/08 , H03K19/177
摘要： A programmable device including a source-drain-gate structure. The device includes two programming electrodes and an antiferromagnetic multiferroic material between the two programming electrodes for switching the spontaneous polarization between a first spontaneous polarization direction and a second spontaneous polarization direction. The programmable device further includes a ferromagnetic material, which is in immediate contact with the multiferroic material. Magnetization of the ferromagnetic material is switchable by a transition between the first switching state and the second switching state of the multiferroic material by an exchange coupling between electronic states of the multiferroic material and the ferromagnetic material. The programmable device also includes means for determining a direction of the magnetization of the ferromagnetic material. A spin valve effect is used for causing an electrical resistance between the source and the drain electrode.
摘要翻译：一种包括源极 - 漏极 - 栅极结构的可编程器件。该装置包括两个编程电极和两个编程电极之间的反铁磁性多铁性材料，用于在第一自发极化方向和第二自发极化方向之间切换自发极化。可编程装置还包括与多铁性材料立即接触的铁磁材料。铁磁材料的磁化可以通过多铁材料的电子状态与铁磁材料之间的交换耦合，通过多铁材料的第一开关状态和第二开关状态之间的转变来切换。可编程装置还包括用于确定铁磁材料的磁化方向的装置。自旋阀效应用于引起源极和漏极之间的电阻。

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