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1. 发明申请

US20090133751A1 Nanostructured Organic Solar Cells 审中-公开
标题翻译：纳米结构有机太阳能电池
公开(公告)号：US20090133751A1
公开(公告)日：2009-05-28
申请号：US12324120
申请日：2008-11-26
申请人： Sidlgata V. Sreenivasan , Shrawan Singhal , Christopher Mark Melliar-Smith , Frank Y. Xu , Byung-Jin Choi
发明人： Sidlgata V. Sreenivasan , Shrawan Singhal , Christopher Mark Melliar-Smith , Frank Y. Xu , Byung-Jin Choi
IPC分类号： H01L31/00
CPC分类号： H01L51/447 , H01L51/0015 , H01L51/424 , H01L2251/105 , Y02E10/549
摘要： Solar cells having at least one electron acceptor layer and at least one electron donor layer forming a patterned p-n junction are described. Electron acceptor layer may be formed by patterning formable N-type material between a template and an electrode layer, and solidifying the formable N-type material.
摘要翻译：描述具有至少一个电子受体层和形成图案化p-n结的至少一个电子给体层的太阳能电池。可以通过在模板和电极层之间构图可形成的N型材料并固化可形成的N型材料来形成电子受体层。

2. 发明授权

US07780893B2 Method of concurrently patterning a substrate having a plurality of fields and a plurality of alignment marks 有权
标题翻译：同时构图具有多个场的衬底和多个对准标记的方法
公开(公告)号：US07780893B2
公开(公告)日：2010-08-24
申请号：US11695850
申请日：2007-04-03
申请人： Sidlgata V. Sreenivasan , Ian M. McMackin , Christopher Mark Melliar-Smith , Byung-Jin Choi
发明人： Sidlgata V. Sreenivasan , Ian M. McMackin , Christopher Mark Melliar-Smith , Byung-Jin Choi
IPC分类号： B28B11/08
CPC分类号： B29C43/021 , B29C43/003 , B29C43/58 , B29C2043/025 , B29C2043/142 , B29C2043/5825 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F9/703 , G03F9/7042 , G03F9/7076 , G03F9/708 , G03F9/7084 , Y10S977/887
摘要： A method of patterning a substrate comprising first and second fields with a template, the template having a mold and a plurality of alignment forming areas and a plurality of template alignment marks, the method comprising: positioning a material on the first field of the substrate and a plurality of regions of the substrate, the plurality of regions laying outside of the first and second fields; positioning the mold and the substrate such that a desired spatial relationship between the mold and the first field of the substrate is obtained to define a pattern in the material on the first field of the substrate while concurrently defining a plurality of substrate alignment marks with the material in the plurality of regions of the substrate in superimposition with the plurality of alignment forming areas of the template; positioning a material on the second field of the substrate; and positioning the mold and the substrate to obtain a desired spatial relationship between the plurality of template alignment marks and the plurality of substrate alignment marks such that a desired spatial relationship between the mold and the second field of the substrate is obtained to define a pattern in the material on the second field of the substrate.
摘要翻译：一种使用模板构图包括第一场和第二场的衬底的方法，所述模板具有模具和多个对准形成区域和多个模板对准标记，所述方法包括：将材料定位在所述衬底的第一场上，以及所述基板的多个区域，所述多个区域布置在所述第一和第二场外; 定位模具和基板，使得获得模具和基板的第一场之间的期望的空间关系，以在基板的第一场上的材料中限定图案，同时用材料限定多个基板对准标记在与所述模板的所述多个对准形成区域重叠的所述基板的所述多个区域中; 将材料定位在基板的第二场上; 并且定位所述模具和所述基板以获得所述多个模板对准标记与所述多个基板对准标记之间的期望的空间关系，使得获得所述模具和所述基板的所述第二场之间的期望的空间关系，以限定所述模板衬底的第二场上的材料。

3. 发明申请

US20070228610A1 Method of Concurrently Patterning a Substrate Having a Plurality of Fields and a Plurality of Alignment Marks 有权
标题翻译：同时形成具有多个场和多个对准标记的基板的方法
公开(公告)号：US20070228610A1
公开(公告)日：2007-10-04
申请号：US11695850
申请日：2007-04-03
申请人： Sidlgata V. Sreenivasan , Ian M. McMackin , Christopher Mark Melliar-Smith , Byung-Jin Choi
发明人： Sidlgata V. Sreenivasan , Ian M. McMackin , Christopher Mark Melliar-Smith , Byung-Jin Choi
IPC分类号： B29C43/02
CPC分类号： B29C43/021 , B29C43/003 , B29C43/58 , B29C2043/025 , B29C2043/142 , B29C2043/5825 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F9/703 , G03F9/7042 , G03F9/7076 , G03F9/708 , G03F9/7084 , Y10S977/887
摘要： A method of patterning a substrate comprising first and second fields with a template, the template having a mold and a plurality of alignment forming areas and a plurality of template alignment marks, the method comprising: positioning a material on the first field of the substrate and a plurality of regions of the substrate, the plurality of regions laying outside of the first and second fields; positioning the mold and the substrate such that a desired spatial relationship between the mold and the first field of the substrate is obtained to define a pattern in the material on the first field of the substrate while concurrently defining a plurality of substrate alignment marks with the material in the plurality of regions of the substrate in superimposition with the plurality of alignment forming areas of the template; positioning a material on the second field of the substrate; and positioning the mold and the substrate to obtain a desired spatial relationship between the plurality of template alignment marks and the plurality of substrate alignment marks such that a desired spatial relationship between the mold and the second field of the substrate is obtained to define a pattern in the material on the second field of the substrate.
摘要翻译：一种使用模板构图包括第一场和第二场的衬底的方法，所述模板具有模具和多个对准形成区域和多个模板对准标记，所述方法包括：将材料定位在所述衬底的第一场上，以及所述基板的多个区域，所述多个区域布置在所述第一和第二场外; 定位模具和基板，使得获得模具和基板的第一场之间的期望的空间关系，以在基板的第一场上的材料中限定图案，同时用材料限定多个基板对准标记在与所述模板的所述多个对准形成区域重叠的所述基板的所述多个区域中; 将材料定位在基板的第二场上; 并且定位所述模具和所述基板以获得所述多个模板对准标记与所述多个基板对准标记之间的期望的空间关系，使得获得所述模具和所述基板的所述第二场之间的期望的空间关系，以限定所述模板衬底的第二场上的材料。

4. 发明申请

US20100278954A1 Method of Concurrently Patterning a Substrate Having a Plurality of Fields and a Plurality of Alignment Marks 审中-公开
标题翻译：同时形成具有多个场和多个对准标记的基板的方法
公开(公告)号：US20100278954A1
公开(公告)日：2010-11-04
申请号：US12835018
申请日：2010-07-13
申请人： Sidlgata V. Sreenivasan , Ian M. McMackin , Christopher Mark Melliar-Smith , Byung-Jin Choi
发明人： Sidlgata V. Sreenivasan , Ian M. McMackin , Christopher Mark Melliar-Smith , Byung-Jin Choi
IPC分类号： B28B11/08
CPC分类号： B29C43/021 , B29C43/003 , B29C43/58 , B29C2043/025 , B29C2043/142 , B29C2043/5825 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F9/703 , G03F9/7042 , G03F9/7076 , G03F9/708 , G03F9/7084 , Y10S977/887
摘要： Imprint lithography templates for patterning substrates are described. The templates include a section having a mold a first pattern of alignment forming areas and template alignment marks. The additional sections are generally devoid of a mold. One or more of the additional section may include the first pattern of a second pattern of alignment forming areas and template alignment marks. The second pattern may correspond to the first pattern.
摘要翻译：描述用于图案化基板的印刷光刻模板。模板包括具有模具的部分，其具有对准形成区域的第一图案和模板对准标记。附加部分通常没有模具。附加部分中的一个或多个可以包括对准形成区域和模板对准标记的第二图案的第一图案。第二图案可以对应于第一图案。

5. 发明申请

US20090214761A1 REAL TIME IMPRINT PROCESS DIAGNOSTICS FOR DEFECTS 有权
标题翻译：实时印刷过程诊断错误
公开(公告)号：US20090214761A1
公开(公告)日：2009-08-27
申请号：US12392663
申请日：2009-02-25
申请人： Sidlgata V. Sreenivasan , Shrawan Singhal , Byung-Jin Choi
发明人： Sidlgata V. Sreenivasan , Shrawan Singhal , Byung-Jin Choi
IPC分类号： C23C16/52
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： Defects and/or particles during an imprint lithography process may provide exclusion zones and/or transition zones in the patterned layer. Exclusion zones and/or transition zones in the patterned layer may be identified to provide a region of interest on a template.
摘要翻译：在压印光刻过程中的缺陷和/或颗粒可以在图案化层中提供排除区和/或过渡区。可以识别图案化层中的排除区和/或过渡区以在模板上提供感兴趣的区域。

6. 发明授权

US07815824B2 Real time imprint process diagnostics for defects 有权
标题翻译：缺陷的实时压印过程诊断
公开(公告)号：US07815824B2
公开(公告)日：2010-10-19
申请号：US12392663
申请日：2009-02-25
申请人： Sidlgata V. Sreenivasan , Shrawan Singhal , Byung-Jin Choi
发明人： Sidlgata V. Sreenivasan , Shrawan Singhal , Byung-Jin Choi
IPC分类号： B29C45/76
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： Defects and/or particles during an imprint lithography process may provide exclusion zones and/or transition zones in the patterned layer. Exclusion zones and/or transition zones in the patterned layer may be identified to provide a region of interest on a template.
摘要翻译：在压印光刻过程中的缺陷和/或颗粒可以在图案化层中提供排除区和/或过渡区。可以识别图案化层中的排除区和/或过渡区以在模板上提供感兴趣的区域。

7. 发明授权

US08828297B2 Patterning of non-convex shaped nanostructures 有权
标题翻译：非凸形纳米结构的图案化
公开(公告)号：US08828297B2
公开(公告)日：2014-09-09
申请号：US13290770
申请日：2011-11-07
申请人： Sidlgata V. Sreenivasan , Vikramjit Singh , Frank Y. Xu , Byung-Jin Choi
发明人： Sidlgata V. Sreenivasan , Vikramjit Singh , Frank Y. Xu , Byung-Jin Choi
IPC分类号： B82Y40/00 , G03F7/00
CPC分类号： B29C59/022 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L29/0673
摘要： Methods of making nano-scale structures with geometric cross-sections, including convex or non-convex cross-sections, are described. The approach may be used to directly pattern substrates and/or create imprint lithography templates or molds that may be subsequently used to directly replicate nano-shaped patterns into other substrates, such as into a functional or sacrificial resist to form functional nanoparticles.
摘要翻译：描述了制造具有几何横截面的纳米级结构的方法，包括凸形或非凸形横截面。该方法可以用于直接图案化衬底和/或创建压印光刻模板或模具，其可以随后用于将纳米形图案直接复制到其它衬底中，例如形成功能性或牺牲抗蚀剂以形成功能纳米颗粒。

8. 发明申请

US20110260361A1 SAFE DEPARATION FOR NANO IMPRINTING 有权
标题翻译： NANO IMPRINTING的安全拨款
公开(公告)号：US20110260361A1
公开(公告)日：2011-10-27
申请号：US13095514
申请日：2011-04-27
申请人： Se-Hyuk Im , Mahadevan GanapathiSubramanian , Edward Brian Fletcher , Niyaz Khusnatdinov , Gerard M. Schmid , Mario Johannes Meissl , Anshuman Cherala , Frank Y. Xu , Byung-Jin Choi , Sidlgata V. Sreenivasan
发明人： Se-Hyuk Im , Mahadevan GanapathiSubramanian , Edward Brian Fletcher , Niyaz Khusnatdinov , Gerard M. Schmid , Mario Johannes Meissl , Anshuman Cherala , Frank Y. Xu , Byung-Jin Choi , Sidlgata V. Sreenivasan
IPC分类号： B29C59/02 , B82Y30/00
CPC分类号： B29C59/02 , B29C45/76 , B29L2007/001 , B82Y10/00 , B82Y40/00 , G03F7/0002 , Y10S977/877
摘要： Control of lateral strain and lateral strain ratio (dt/db) between template and substrate through the selection of template and/or substrate thicknesses (Tt and/or Tb), control of template and/or substrate back pressure (Pt and/or Pb), and/or selection of material stiffness are described.
摘要翻译：通过选择模板和/或衬底厚度（Tt和/或Tb），模板和/或衬底背压（Pt和/或Pb）的控制来控制模板和衬底之间的横向应变和横向应变比（dt / db））和/或材料刚度的选择。

9. 发明授权

US08968620B2 Safe separation for nano imprinting 有权
标题翻译：纳米压印安全分离
公开(公告)号：US08968620B2
公开(公告)日：2015-03-03
申请号：US13095514
申请日：2011-04-27
申请人： Se-Hyuk Im , Mahadevan GanapathiSubramanian , Edward Brian Fletcher , Niyaz Khusnatdinov , Gerard M. Schmid , Mario Johannes Meissl , Anshuman Cherala , Frank Y. Xu , Byung-Jin Choi , Sidlgata V. Sreenivasan
发明人： Se-Hyuk Im , Mahadevan GanapathiSubramanian , Edward Brian Fletcher , Niyaz Khusnatdinov , Gerard M. Schmid , Mario Johannes Meissl , Anshuman Cherala , Frank Y. Xu , Byung-Jin Choi , Sidlgata V. Sreenivasan
IPC分类号： B29C45/76 , G03F7/00 , B82Y10/00 , B82Y40/00
CPC分类号： B29C59/02 , B29C45/76 , B29L2007/001 , B82Y10/00 , B82Y40/00 , G03F7/0002 , Y10S977/877
摘要： Control of lateral strain and lateral strain ratio (dt/db) between template and substrate through the selection of template and/or substrate thicknesses (Tt and/or Tb), control of template and/or substrate back pressure (Pt and/or Pb), and/or selection of material stiffness are described.
摘要翻译：通过选择模板和/或衬底厚度（Tt和/或Tb），模板和/或衬底背压（Pt和/或Pb）的控制来控制模板和衬底之间的横向应变和横向应变比（dt / db））和/或材料刚度的选择。

10. 发明授权

US08980751B2 Methods and systems of material removal and pattern transfer 有权
标题翻译：材料去除和图案转移的方法和系统
公开(公告)号：US08980751B2
公开(公告)日：2015-03-17
申请号：US13014508
申请日：2011-01-26
申请人： Gerard M. Schmid , Michael N. Miller , Byung-Jin Choi , Douglas J. Resnick , Sidlgata V. Sreenivasan , Frank Y. Xu , Darren D. Donaldson
发明人： Gerard M. Schmid , Michael N. Miller , Byung-Jin Choi , Douglas J. Resnick , Sidlgata V. Sreenivasan , Frank Y. Xu , Darren D. Donaldson
IPC分类号： H01L21/311 , H01J37/20 , G03F7/42 , B82Y40/00 , B82Y10/00 , G03F7/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F7/42
摘要： Polymerized material on a substrate may be removed by exposure to vacuum ultraviolet (VUV) radiation from an energy source within a gaseous atmosphere of a controlled composition. Following such removal, additional etching techniques are also described for nano-imprinting.
摘要翻译：可以通过暴露于受控组合物的气体气氛中的来自能量源的真空紫外（VUV）辐射来去除衬底上的聚合材料。在这种去除之后，还描述了用于纳米压印的附加蚀刻技术。

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