专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06523416B2 Method for setting shape and working stress, and working environment of steel member 失效
公开(公告)号：US06523416B2
公开(公告)日：2003-02-25
申请号：US09940669
申请日：2001-08-29
申请人： Shusaku Takagi , Kaneaki Tsuzaki , Tadanobu Inoue
发明人： Shusaku Takagi , Kaneaki Tsuzaki , Tadanobu Inoue
IPC分类号： G01N300
CPC分类号： C22C38/22 , C22C38/04 , G01N33/20
摘要： A delayed fracture is effectively prevented by appropriately setting a shape and working stress, and working environment of a high strength member having more than 1,000 MPa of tensile strength. For this end, the relationship between a maximum value of diffusible hydrogen contents of unfailed specimens (Hc) and Weibull stress are found and the content of diffusible hydrogen entered into steel from the environment due to corrosion during the use of the steel member (He) is also found. Then, Weibull stress in the Hc that is equal to the He is found, thus determining the shape and working stress of the steel member so as to provide stress below the Weibull stress.

2. 发明申请

US20090277539A1 Steel for Warm Working, Warm Working Method Using the Steel, and Steel Material and Steel Component Obtainable Therefrom 审中-公开
标题翻译：用于工作的钢，使用钢的热加工方法，以及可获得的钢材和钢材
公开(公告)号：US20090277539A1
公开(公告)日：2009-11-12
申请号：US12085304
申请日：2006-11-21
申请人： Yuuji Kimura , Tadanobu Inoue , Kaneaki Tsuzaki , Kotobu Nagai
发明人： Yuuji Kimura , Tadanobu Inoue , Kaneaki Tsuzaki , Kotobu Nagai
IPC分类号： C21D11/00 , C21D8/02 , C21D8/06 , C22C38/00
CPC分类号： C21D9/46 , C21D8/0205 , C21D8/0231 , C21D8/0431 , C21D8/065 , C21D8/105 , C21D9/0075 , C21D9/0093 , C21D9/525 , C22C38/02 , C22C38/04 , C22C38/18
摘要： There are provided a steel for warm working, to be subjected to warm working as various structures, components of cars, and the like, a warm working method thereof, and a steel material and a steel component obtainable from the warm working method.[Solving Means] A steel is to have a particle dispersion type fiber structure formed in the matrix by warm working. The steel is characterized in that the total amount of the dispersed second-phase particles at room temperature is 7×10−3 or more in terms of volume fraction, and the Vickers hardness (HV) is equal to or larger than the hardness H of the following equation (2): H=(5.2−1.2×10−4λ)×102 (2) when the steel is subjected to any of annealing, tempering, and aging treatments in the as-unworked state under conditions such that a parameter λ expressed by the following equation (1): λ=T(log t+20)(T; temperature(K), t; time(hr)) (1) is 1.4×104 or more in a prescribed temperature range of 350° C. or more and Ac1 point or less. This steel is taken as the steel for warm working.
摘要翻译：提供一种用于温暖加工的钢，可以作为各种结构，汽车部件等进行温暖加工，其加热方法，以及可从该加热方法获得的钢材和钢部件。 [解决方案]钢是通过热加工形成在基质中的粒子分散型纤维结构体。钢的特征在于，室温下分散的二相粒子的总量以体积分数计为7×10 -3以上，维氏硬度（HV）等于或大于下述的硬度H 等式（2）：H =（5.2-1.2×10-4λ）x102（2）当钢在非工作状态下进行任何退火，回火和老化处理时，条件是使得由以下公式（1）：在350℃以上的规定温度范围内，λ= T（log t + 20）（T;温度（K），t;时间（hr））（1）为1.4×10 4以上和Ac1点以下。这种钢被作为温暖工作的钢。

3. 发明申请

US20130019211A1 Optimizing lithographic mask for manufacturability in efficient manner 失效
标题翻译：以有效的方式优化光刻面具的可制造性
公开(公告)号：US20130019211A1
公开(公告)日：2013-01-17
申请号：US13183070
申请日：2011-07-14
申请人： Masaharu Sakamoto , Alan E. Rosenbluth , Marc Alan Szeto-Millstone , Tadanobu Inoue , Kehan Tian , Andreas Waechter , Jonathan Lee , David Osmond Melville
发明人： Masaharu Sakamoto , Alan E. Rosenbluth , Marc Alan Szeto-Millstone , Tadanobu Inoue , Kehan Tian , Andreas Waechter , Jonathan Lee , David Osmond Melville
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G06F2217/12 , Y02P90/265
摘要： Mask layout data of a lithographic mask includes polygons that each include horizontal and vertical edges. Each of a number of target edge pairs is defined by two edges of one or more of the polygons. A search box having a boundary coincident with a given edge of the edges of the polygons is specified. Whether the search box includes at least one edge of the edges of the polygons in addition to the given edge is determined. Where the search box includes at least one edge, at least one of the target edge pairs is specified as including the given edge and one of the at least one edge. For each target edge pair that has been specified, a manufacturability penalty value is determined. A dynamic manufacturability constraint table and a non-zero multiplier table are maintained.
摘要翻译：光刻掩模的掩模布局数据包括各自包括水平和垂直边缘的多边形。多个目标边对中的每一个由一个或多个多边形的两个边界定义。指定具有与多边形的边缘的给定边缘重合的边界的搜索框。确定搜索框是否包括除了给定边缘之外的多边形的边缘的至少一个边缘。在搜索框包括至少一个边缘的情况下，目标边缘对中的至少一个被指定为包括给定边缘和至少一个边缘中的一个边缘。对于已经指定的每个目标边对，确定可制造性惩罚值。维持动态可制造性约束表和非零乘数表。

4. 发明申请

US20100254849A1 MAGNESIUM ALLOY 有权
标题翻译：镁合金
公开(公告)号：US20100254849A1
公开(公告)日：2010-10-07
申请号：US12734001
申请日：2008-10-02
申请人： Toshiji Mukai , Hidetoshi Somekawa , Tadanobu Inoue , Alok Singh
发明人： Toshiji Mukai , Hidetoshi Somekawa , Tadanobu Inoue , Alok Singh
IPC分类号： C22C23/02
CPC分类号： C22F1/06 , C22C1/002 , C22C23/02 , C22F1/00
摘要： An object of the invention is to provide a magnesium alloy having high strength and sufficient formability. A magnesium alloy mainly contains magnesium and has high tensile strength and high compression strength. The crystal grain structure of the alloy has a high angle grain boundary, and the inside of the crystal grain surrounded by the high angle grain boundary is composed of subgrains.
摘要翻译：本发明的目的是提供一种具有高强度和充分成形性的镁合金。镁合金主要含镁，抗拉强度高，抗压强度高。合金的晶粒结构具有高角度晶界，由高角度晶界包围的晶粒内部由亚晶粒构成。

5. 发明申请

US20100153902A1 DETERMINING MANUFACTURABILITY OF LITHOGRAPHIC MASK BY SELECTING TARGET EDGE PAIRS USED IN DETERMINING A MANUFACTURING PENALTY OF THE LITHOGRAPHIC MASK 有权
标题翻译：通过选择用于确定LITHOGRAPHIC MASK的制造性罚款中使用的目标边缘对方法来确定LITHOGRAPHIC MASK的可制造性
公开(公告)号：US20100153902A1
公开(公告)日：2010-06-17
申请号：US12334485
申请日：2008-12-14
申请人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Kehan Tian , Masaharu Sakamoto , Alan E. Rosenbluth
发明人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Kehan Tian , Masaharu Sakamoto , Alan E. Rosenbluth
IPC分类号： G06F17/50
CPC分类号： G03F1/68 , G03F1/78
摘要： The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edges are selected from mask layout data of the lithographic mask. The mask layout data includes polygons distributed over cells, where each polygon has edges. The cells include a center cell, two vertical cells above and below the center cell, and two horizontal cells to the left and right of the center cell. Target edge pairs are selected for determining a manufacturing penalty in making the lithographic mask, in a manner that decreases the computational volume in determining the manufacturing penalty. The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is determined based on the target edge pairs selected. The manufacturability of the lithographic mask is output. The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask.
摘要翻译：确定用于制造半导体器件的实例的光刻掩模的可制造性。从光刻掩模的掩模布局数据中选择目标边缘。掩模布局数据包括分布在单元格上的多边形，其中每个多边形具有边。小区包括中心小区，中心小区上方和下方的两个垂直小区以及中心小区左侧和右侧的两个水平小区。选择目标边对以确定在制作光刻掩模时的制造损失，以减小计算体积来确定制造损失。基于所选择的目标边缘对来确定光刻掩模的可制造性，包括制造光刻掩模的制造损失。输出光刻掩模的可制造性。光刻掩模的可制造性取决于制造光刻掩模的制造损失。

6. 发明授权

US08156331B2 Information transfer 有权
标题翻译：信息传递
公开(公告)号：US08156331B2
公开(公告)日：2012-04-10
申请号：US11779750
申请日：2007-07-18
申请人： Seiichi Kawano , Tadanobu Inoue
发明人： Seiichi Kawano , Tadanobu Inoue
IPC分类号： H04L29/06
CPC分类号： H04L9/00 , G06F21/62 , G06F21/6263 , G06F21/6281 , G06F2221/2105 , H04L2209/60 , H04L2209/76
摘要： Methods and apparatus are provided for securely inputting highly confidential information, exchanging the information via a network, and securely reflecting the information in a computer, without the information being stolen by malicious software. Upon a transfer of encrypted information from a server to a computer, the transferred information is stored in a memory of the computer and the computer is switched to a suspended state and immediately thereafter returns to the previous state to be shifted to under the control of a BIOS. The information stored in the memory is decrypted and processed there. Processing information generated based on the processed information is then encrypted and it is transferred to the server after the computer is switched to under the control of the operating system.
摘要翻译：提供方法和装置，用于安全地输入高度机密信息，通过网络交换信息，并将信息安全地反映在计算机中，而不会使信息被恶意软件窃取。在将加密信息从服务器传送到计算机时，所传送的信息被存储在计算机的存储器中，并且计算机被切换到暂停状态，并且立即返回到先前状态以转移到在 BIOS。存储在存储器中的信息在那里被解密和处理。然后，基于处理后的信息生成的处理信息被加密，并且在操作系统的控制下将计算机切换到之后将其传送到服务器。

7. 发明授权

US08056026B2 Determining manufacturability of lithographic mask by selecting target edge pairs used in determining a manufacturing penalty of the lithographic mask 有权
标题翻译：通过选择用于确定光刻掩模的制造损失的目标边缘对来确定光刻掩模的可制造性
公开(公告)号：US08056026B2
公开(公告)日：2011-11-08
申请号：US12334485
申请日：2008-12-14
申请人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Kehan Tian , Masahura Sakamoto , Alan E. Rosenbluth
发明人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Kehan Tian , Masahura Sakamoto , Alan E. Rosenbluth
IPC分类号： G06F17/50
CPC分类号： G03F1/68 , G03F1/78
摘要： The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edges are selected from mask layout data of the lithographic mask. The mask layout data includes polygons distributed over cells, where each polygon has edges. The cells include a center cell, two vertical cells above and below the center cell, and two horizontal cells to the left and right of the center cell. Target edge pairs are selected for determining a manufacturing penalty in making the lithographic mask, in a manner that decreases the computational volume in determining the manufacturing penalty. The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is determined based on the target edge pairs selected. The manufacturability of the lithographic mask is output. The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask.
摘要翻译：确定用于制造半导体器件的实例的光刻掩模的可制造性。从光刻掩模的掩模布局数据中选择目标边缘。掩模布局数据包括分布在单元格上的多边形，其中每个多边形具有边。小区包括中心小区，中心小区上方和下方的两个垂直小区以及中心小区左侧和右侧的两个水平小区。选择目标边对以确定在制作光刻掩模时的制造损失，以减小计算体积来确定制造损失。基于所选择的目标边缘对来确定光刻掩模的可制造性，包括制造光刻掩模的制造损失。输出光刻掩模的可制造性。光刻掩模的可制造性取决于制造光刻掩模的制造损失。

8. 发明授权

US08056023B2 Determining manufacturability of lithographic mask by reducing target edge pairs used in determining a manufacturing penalty of the lithographic mask 有权
标题翻译：通过减少用于确定光刻掩模的制造损失的目标边缘对来确定光刻掩模的可制造性
公开(公告)号：US08056023B2
公开(公告)日：2011-11-08
申请号：US12334482
申请日：2008-12-14
申请人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Kehan Tian , Masahura Sakamoto , Alan E. Rosenbluth
发明人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Kehan Tian , Masahura Sakamoto , Alan E. Rosenbluth
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edge pairs are selected from mask layout data of the lithographic mask to determine a manufacturing penalty in making the lithographic mask. The mask layout data includes polygons, where each polygon has edges, and where each target edge pair is defined by two of the edges of one or more of the polygons. The number of the target edge pairs is reduced to decrease computational volume in determining the manufacturing penalty in making the lithographic mask. The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is determined based on the target edge pairs as reduced in number. The manufacturability of the lithographic mask is output. The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask.
摘要翻译：确定用于制造半导体器件的实例的光刻掩模的可制造性。从光刻掩模的掩模布局数据中选择目标边缘对，以确定在制作光刻掩模时的制造损失。掩模布局数据包括多边形，其中每个多边形具有边缘，并且其中每个目标边对对由一个或多个多边形的两个边缘限定。在确定制作光刻掩模时的制造损失时，减少目标边缘对的数量以减少计算量。基于减少数量的目标边缘对来确定光刻掩模的可制造性，包括制造光刻掩模的制造损失。输出光刻掩模的可制造性。光刻掩模的可制造性取决于制造光刻掩模的制造损失。

9. 发明申请

US20110231803A1 Wavefront engineering of mask data for semiconductor device design 有权
标题翻译：用于半导体器件设计的掩模数据的波前工程
公开(公告)号：US20110231803A1
公开(公告)日：2011-09-22
申请号：US12725287
申请日：2010-03-16
申请人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Alan E. Rosenbluth , Kehan Tian , Masaharu Sakamoto , Saeed Bagheri
发明人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Alan E. Rosenbluth , Kehan Tian , Masaharu Sakamoto , Saeed Bagheri
IPC分类号： G06F17/50
CPC分类号： G03F7/70433 , G03F1/36 , G03F1/70 , G03F7/705
摘要： Optical wave data for a semiconductor device design is divided into regions. First wavefront engineering is performed on the wave data of each region, accounting for just the wave data of each region and not accounting for the wave data of neighboring regions of each region. The optical wave data of each region is normalized based on results of the first wavefront engineering. Second wavefront engineering is performed on the wave data of each region, based at least on the wave data of each region as has been normalized. The second wavefront engineering takes into account the wave data of each region and a guard band around each region that includes the wave data of the neighboring regions of each region. The second wavefront engineering can be sequentially performed by organizing the regions into groups, and sequentially performing the second wavefront engineering on the regions of each group in parallel.
摘要翻译：半导体器件设计的光波数据分为几个区域。对每个区域的波形数据执行第一波前工程，仅考虑每个区域的波形数据，不考虑每个区域的相邻区域的波形数据。基于第一波前工程的结果对每个区域的光波数据进行归一化。至少基于已经归一化的每个区域的波形数据，对每个区域的波形数据执行第二波前工程。第二波前工程考虑了每个区域的波形数据和围绕每个区域的保护带，其包括每个区域的相邻区域的波形数据。可以通过将区域组合成组并且顺序地在并行地对每个组的区域执行第二波前工程来顺序执行第二波前工程。

10. 发明申请

US20100153903A1 DETERMINING MANUFACTURABILITY OF LITHOGRAPHIC MASK USING CONTINUOUS DERIVATIVES CHARACTERIZING THE MANUFACTURABILITY ON A CONTINUOUS SCALE 有权
标题翻译：使用连续衍生物确定表面掩模的可制造性，表征连续性尺度上的可制造性
公开(公告)号：US20100153903A1
公开(公告)日：2010-06-17
申请号：US12334488
申请日：2008-12-14
申请人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Kehan Tian , Masaharu Sakamoto , Alan E. Rosenbluth
发明人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Kehan Tian , Masaharu Sakamoto , Alan E. Rosenbluth
IPC分类号： G06F17/50
CPC分类号： G03F1/76 , G03F1/36
摘要： The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edge pairs are selected from mask layout data of the lithographic mask, for determining a manufacturing penalty in making the lithographic mask. The mask layout data includes polygons, where each polygon has a number of edges. Each target edge pair is defined by two of the edges of one or more of the polygons. The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is determined. Determining the manufacturing penalty is based on the target edge pairs as selected. Determining the manufacturability of the lithographic mask uses continuous derivatives characterizing the manufacturability of the lithographic mask on a continuous scale. The manufacturability of the lithographic mask is output. The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask.
摘要翻译：确定用于制造半导体器件的实例的光刻掩模的可制造性。从光刻掩模的掩模布局数据中选择目标边缘对，以确定在制作光刻掩模时的制造损失。掩模布局数据包括多边形，其中每个多边形具有多个边。每个目标边对由一个或多个多边形的两个边缘定义。确定了光刻掩模的可制造性，包括制造光刻掩模的制造损失。确定制造损失是基于所选择的目标边缘对。确定平版印刷掩模的可制造性使用连续的衍生物来表征平版印刷掩模的可制造性在连续尺度上。输出光刻掩模的可制造性。光刻掩模的可制造性取决于制造光刻掩模的制造损失。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式