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1. 发明授权

US5204544A Photoelectric conversion device with stabilizing electrode 失效
标题翻译：具有稳定电极的光电转换装置
公开(公告)号：US5204544A
公开(公告)日：1993-04-20
申请号：US839074
申请日：1992-02-24
申请人： Shunsuke Inoue , Shiro Arikawa
发明人： Shunsuke Inoue , Shiro Arikawa
IPC分类号： H01L27/146 , H01L31/101 , H01L31/11
CPC分类号： H01L27/14681 , H01L31/101 , H01L31/1105
摘要： A photoelectric conversion device has a semiconductor region for accumulating the carriers generated by photoexcitation which reads the signals according to the accumulated carriers in said semiconductor region. A stabilizing electrode is provided above the surface where the semiconductor region is formed.
摘要翻译：光电转换装置具有用于累积通过光激发产生的载流子的半导体区域，其根据所述半导体区域中的累积载流子读取信号。在形成半导体区域的表面上方设置稳定电极。

2. 发明授权

US07714919B2 Solid-state image pickup device and camera 有权
标题翻译：固态图像拾取装置和相机
公开(公告)号：US07714919B2
公开(公告)日：2010-05-11
申请号：US11130160
申请日：2005-05-17
申请人： Shunsuke Inoue , Shin Kikuchi
发明人： Shunsuke Inoue , Shin Kikuchi
IPC分类号： H04N3/14 , H04N5/225 , H04N5/217 , H04N5/235
CPC分类号： H04N5/378 , H04N5/343 , H04N5/347
摘要： A solid-state image pickup device includes an adder adding signals from pixels to achieve a high S/N, while performing both static image and moving image pickup. The device has a pixel unit having pixels arranged two-dimensionally and outputs pixel signals derived by photoelectric conversion. The device operates in a first mode of reading a pixel signal of every pixel, and a second mode of adding and reading a plurality of pixel signals. Variable gain column amplifiers perform readout at different gains in the first and second modes. The device also has output lines where output signals from the pixels arranged in one line are outputted respectively, and at least one of the variable gain amplifier is connected to each of the output lines. The gain at the time of readout in the second mode is higher than the gain at the time of readout in the first mode.
摘要翻译：固态图像拾取装置包括一个加法器，用于附加来自像素的信号以实现高S / N，同时执行静态图像和运动图像拾取。该装置具有像素单元，其具有二维布置的像素，并且输出通过光电转换导出的像素信号。该装置以读取每个像素的像素信号的第一模式和添加和读取多个像素信号的第二模式工作。可变增益列放大器在第一和第二模式下以不同的增益执行读出。该装置还具有分别输出来自排列在一行中的像素的输出信号的输出线，并且可变增益放大器中的至少一个连接到每个输出线。在第二模式中读出时的增益高于在第一模式中读出时的增益。

3. 发明授权

US07639297B2 Image pickup apparatus 失效
公开(公告)号：US07639297B2
公开(公告)日：2009-12-29
申请号：US11198232
申请日：2005-08-08
申请人： Tomoya Yoneda , Shunsuke Inoue , Tetsunobu Kochi , Hidekazu Takahashi , Masanori Ogura
发明人： Tomoya Yoneda , Shunsuke Inoue , Tetsunobu Kochi , Hidekazu Takahashi , Masanori Ogura
IPC分类号： H04N3/14 , H04N5/225
CPC分类号： H01L27/14603 , H01L27/14621 , H01L27/14625 , H01L27/14645 , H04N5/3415 , H04N9/045 , H04N2209/048
摘要： An image pickup apparatus is provided, which comprises a plurality of image pickup areas formed on a same semiconductor chip and arranged in the horizontal and the vertical directions, each image pickup area having a plurality of pixels arranged in the horizontal and the vertical directions, a plurality of vertical scanning circuits which sequentially scan pixels in the vertical direction to scan a plurality of image pickup areas in the vertical direction independently from each other, a plurality of lenses, at least one of which is provided in each of the plurality of image pickup areas and which focuses light to form an image on the image pickup areas, and a driving circuit which drives the plurality of vertical scanning circuits so that at least a part of a scanning period of each of the plurality of vertical scanning circuits overlaps with each other.

4. 发明申请

US20070279502A1 SOLID-STATE IMAGE PICK-UP DEVICE AND IMAGING SYSTEM USING THE SAME 失效
标题翻译：固态图像拍摄装置和使用其的成像系统
公开(公告)号：US20070279502A1
公开(公告)日：2007-12-06
申请号：US11833146
申请日：2007-08-02
申请人： Shunsuke Inoue
发明人： Shunsuke Inoue
IPC分类号： H04N3/14
CPC分类号： H01L27/14601 , H01L21/28525 , H01L23/53271 , H01L27/14612 , H01L27/14623 , H01L27/1463 , H01L27/14636 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a solid-state image pick-up device without shading in the dark state, and capable of making a dynamic range and a S/N high. Reference numeral 505 denotes an N-type cathode of a photodiode, 506 denoting a surface P-type region for forming the photodiode into an embedded structure, 508a denoting an N-type high concentration region which forms a floating diffusion and which is also a drain region of a transfer MOS transistor. Reference character 508b denotes a polysilicon lead-out electrode brought into direct contact with the N-type high concentration region. Light incident from the surface passes through an aperture without a metal third layer 525 to enter into the photodiode. Among incident lights, light reflected by the top surface of a gate electrode 504 of the transfer MOS transistor is reflected by a first layer metal 521 right above the polysilicon, so as to repeats reflection a plurality of times to attenuate sufficiently before entering into the floating diffusion section, thereby making the aliasing extremely small.
摘要翻译：本发明提供了一种固态图像拾取装置，其在黑暗状态下没有阴影，并且能够使动态范围和S / N高。附图标记505表示光电二极管的N型阴极，506表示用于将光电二极管形成嵌入结构的表面P型区域，508表示形成浮动扩散的N型高浓度区域，也表示为漏极区域。附图标记508b表示与N型高浓度区域直接接触的多晶硅引出电极。从表面入射的光通过没有金属第三层525的孔径进入光电二极管。在入射光中，由转移MOS晶体管的栅电极504的上表面反射的光被多晶硅上方的第一层金属521反射，从而在进入浮置之前多次重复反射以充分衰减扩散部分，从而使得混叠非常小。

5. 发明申请

US20060278896A1 Solid-state image sensing device 失效
标题翻译：固态摄像装置
公开(公告)号：US20060278896A1
公开(公告)日：2006-12-14
申请号：US11448020
申请日：2006-06-07
申请人： Shunsuke Inoue
发明人： Shunsuke Inoue
IPC分类号： H01L29/768
CPC分类号： H01L27/14612 , H01L27/14623
摘要： A solid-state image sensing device has a pixel that includes a photodiode that generates an electrical charge according to an amount of incoming light, a floating diffusion portion, a charge transfer transistor that transfers the electrical charge to the floating diffusion portion from the photoelectric conversion portion, a reading circuit that outputs an signal on the basis of said electrical charge held in said floating diffusion portion, and a light-shielding member disposed so as to cover a side wall of a gate electrode of the charge transfer transistor on the photoelectric conversion portion side.
摘要翻译：固态摄像装置具有像素，该像素包括根据入射光量产生电荷的光电二极管，浮动扩散部分，电荷转移晶体管，其将电荷从光电转换传递到浮动扩散部分基于保持在所述浮动扩散部分中的所述电荷输出信号的读取电路和设置成在光电转换上覆盖电荷转移晶体管的栅电极的侧壁的遮光部件部分侧。

6. 发明申请

US20050035382A1 Solid state image sensing device having pixels provided with barrier layer underneath transistor regions and camera using said device 审中-公开
标题翻译：具有在晶体管区域下方设置有阻挡层的像素的固态图像感测装置和使用所述装置的相机
公开(公告)号：US20050035382A1
公开(公告)日：2005-02-17
申请号：US10944941
申请日：2004-09-21
申请人： Mahito Shinohara , Shunsuke Inoue
发明人： Mahito Shinohara , Shunsuke Inoue
IPC分类号： H01L27/146 , H04N5/335 , H04N5/369 , H04N5/374 , H01L31/062
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14609 , H01L27/1463 , H01L27/14632 , H01L27/14643 , H01L27/14654 , H01L27/14656
摘要： A solid-state image sensing device includes a plurality of pixels. Each pixel has a photodiode, a first transistor, and a second transistor. The photodiode is constituted by a first-conductivity-type semiconductor region and a second-conductivity-type semiconductor region. The first and second conductivity types are opposite to each other. The first transistor has a first-conductivity-type drain region formed in the second-conductivity-type semiconductor region to transfer signal charge to the drain region. The second transistor has a source region and a drain region which are formed in the second-conductivity-type semiconductor region and which have the first conductivity type. At least one second-conductivity-type potential barrier is provided under the drain region of the first transistor and the source region and/or the drain region of the second transistor.
摘要翻译：固态图像感测装置包括多个像素。每个像素具有光电二极管，第一晶体管和第二晶体管。光电二极管由第一导电型半导体区域和第二导电型半导体区域构成。第一和第二导电类型彼此相反。第一晶体管具有形成在第二导电型半导体区域中的第一导电型漏极区域，以将信号电荷转移到漏极区域。第二晶体管具有形成在第二导电型半导体区域中并且具有第一导电类型的源极区和漏极区。在第一晶体管的漏极区域和第二晶体管的源极区域和/或漏极区域的下方提供至少一个第二导电型势垒。

7. 发明授权

US6144427A Polymer dispersed liquid crystal panel 失效
标题翻译：聚合物分散液晶面板
公开(公告)号：US6144427A
公开(公告)日：2000-11-07
申请号：US568319
申请日：1995-12-06
申请人： Hiroaki Hoshi , Shunsuke Inoue
发明人： Hiroaki Hoshi , Shunsuke Inoue
IPC分类号： G02F1/1333 , G02F1/1334 , G02F1/1335 , G02F1/136 , G02F1/1368
CPC分类号： G02F1/133514 , G02F1/1334 , G02F2001/133521 , G02F2203/02
摘要： A liquid crystal display device comprises a reflective type liquid crystal panel with pixels which are arranged in two-dimentionally and which modulate irradiated light utilizing polymer dispersed liquid crystal capable of exhibiting two conditions including scattering and unscattering. The device is provided with an optical member having a multiple-interference effect at a predetermined angle with respect to the surface of the reflective type liquid crystal panel.
摘要翻译：液晶显示装置包括具有二维配置的像素的反射型液晶面板，利用能够呈现包括散射和不散射的两个条件的聚合物分散液晶来调制照射光。该装置设置有相对于反射型液晶面板的表面以预定角度具有多重干涉效应的光学构件。

8. 发明授权

US5994757A Electronic circuit device capable for use as a memory device 失效
标题翻译：能用作存储装置的电子电路装置
公开(公告)号：US5994757A
公开(公告)日：1999-11-30
申请号：US383186
申请日：1995-02-03
申请人： Takeshi Ichikawa , Mamoru Miyawaki , Shunsuke Inoue
发明人： Takeshi Ichikawa , Mamoru Miyawaki , Shunsuke Inoue
IPC分类号： G11C17/06 , G11C17/16 , H01L23/525 , H01L27/10 , H01L29/00 , H01L29/04 , H01L29/861
CPC分类号： G11C17/16 , H01L23/5252 , H01L2924/0002
摘要： An electronic circuit device includes first and second conductors and a high-resistance member arranged therebetween. The high-resistance member consists of a material which changes from a high resistivity state to a low resistivity state in accordance with a voltage applied between the first and second conductors.
摘要翻译：电子电路装置包括第一和第二导体以及设置在它们之间的高电阻部件。高电阻部件由根据施加在第一和第二导体之间的电压从高电阻率状态变为低电阻率状态的材料构成。

9. 发明授权

US5812231A Display unit 失效
标题翻译：显示单元
公开(公告)号：US5812231A
公开(公告)日：1998-09-22
申请号：US492247
申请日：1995-06-19
申请人： Tetsunobu Kochi , Mamoru Miyawaki , Shunsuke Inoue , Takanori Watanabe
发明人： Tetsunobu Kochi , Mamoru Miyawaki , Shunsuke Inoue , Takanori Watanabe
IPC分类号： G02F1/1333 , G02F1/133 , G02F1/1345 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , G09G3/20 , G09G3/36 , H01L27/12 , H01L27/13 , H01L29/786 , G09G5/00 , H01L29/04
CPC分类号： G09G3/3688 , G09G3/3648 , H01L27/1203 , H01L27/13 , G02F1/13454 , G02F2001/136281 , G09G2310/0248 , G09G2310/0297 , G09G3/2011
摘要： A high-density impurity semiconductor region having the same conductivity type as a single-crystal silicon substrate is formed in addition to a main circuit portion of a peripheral circuit on the single-crystal silicon substrate. This semiconductor region is connected to a given potential point directly leading to an electric source. Alternatively, at a part of the peripheral drive circuit, a high-density impurity semiconductor region having a conductivity type reverse to that of the single-crystal silicon substrate is formed, and this semiconductor region is connected to a given potential point directly leading to an electric source. This can solve the problem that photocarriers (electrons and/or holes) caused by the light having not cut off and having entered into the single-crystal silicon region may enter into the peripheral drive circuit through the single-crystal silicon substrate to cause misoperation of the circuit.
摘要翻译：除了在单晶硅衬底上的外围电路的主电路部分之外，还形成具有与单晶硅衬底相同的导电类型的高密度杂质半导体区域。该半导体区域连接到直接通向电源的给定电位点。或者，在外围驱动电路的一部分，形成具有与单晶硅基板相反的导电类型的高密度杂质半导体区域，并且该半导体区域直接连接到给定的电位点，电源。这可以解决由未被切断并进入单晶硅区域的光引起的光载流子（电子和/或空穴）可能通过单晶硅衬底进入外围驱动电路的问题，导致误操作电路。

10. 发明授权

US5757054A Display unit 失效
标题翻译：显示单元
公开(公告)号：US5757054A
公开(公告)日：1998-05-26
申请号：US714439
申请日：1996-09-16
申请人： Mamoru Miyawaki , Shunsuke Inoue
发明人： Mamoru Miyawaki , Shunsuke Inoue
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , H01L27/06 , H01L29/04 , H01L31/036
CPC分类号： G02F1/136277 , H01L27/0688 , G02F1/13454
摘要： The present invention solves problems as follows: a problem that, since light for displaying enters into a semiconductor substrate, carrier induced by light occurs in the semiconductor substrate, potential of the substrate fluctuates, and hence display characteristics become worse; a problem that, in the semiconductor substrate, voltages are applied to the peripheral driving circuits so as to operate the peripheral driving circuits formed in a single-crystal area, which makes display characteristics worse by the voltages being conducted to the display area through the substrate; and a problem that, in case potentials of adjacent pixels greatly differ, the difference locally changes. For this purpose, in a display unit including an active matrix substrate having an image display portion being provided with a plurality of switches and a driving circuit for supplying driving signals to the switches around the image display portion, an opposing substrate opposing the active matrix substrate and having a transparent electrode, and a liquid crystal material between both of the active matrix substrate and the opposing substrate, heavily doped impurity regions having impurity density heavier than that of the semiconductor substrate are formed in the image display portion, and the heavily doped impurity regions are connected to a fixed potential around the image display portion.
摘要翻译：本发明解决了以下问题：由于用于显示的光进入半导体衬底，所以在半导体衬底中产生由光引起的载流子，所以衬底的电位变动，因此显示特性变差; 在半导体基板中，向周边驱动电路施加电压以对形成在单晶区域中的外围驱动电路进行操作的问题在于，通过通过基板向显示区域传导的电压使显示特性变差 ; 以及在相邻像素的电位大大不同的情况下，差异局部变化的问题。为此，在包括具有图像显示部分的多个开关的有源矩阵基板和用于向图像显示部分周围的开关提供驱动信号的驱动电路的显示单元中，与有源矩阵基板相对的相对基板并且在有源矩阵基板和相对基板两者之间具有透明电极和液晶材料，在图像显示部分中形成具有比半导体基板重的杂质密度的重掺杂杂质区，并且重掺杂杂质区域连接到图像显示部分周围的固定电位。

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