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1. 发明授权

US07465647B2 Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device 有权
公开(公告)号：US07465647B2
公开(公告)日：2008-12-16
申请号：US11896509
申请日：2007-09-04
申请人： Shunpei Yamazaki , Toru Takayama , Yohei Kanno
发明人： Shunpei Yamazaki , Toru Takayama , Yohei Kanno
IPC分类号： H01L21/46 , H01L21/30 , H01L21/762
CPC分类号： H01L21/6835 , G06K19/0704 , G06K19/0723 , G06K19/07703 , G06K19/07718 , G06K19/07745 , G06K19/07749 , G06K19/0775 , G06K19/07758 , G06K19/07779 , G06K19/07781 , G06K19/07783 , H01L23/49855 , H01L2221/68318 , H01L2221/68359 , H01L2221/68368 , H01L2224/45147 , H01L2224/49171 , H01L2924/00014 , H01L2924/01015 , H01L2924/01047 , H01L2924/10253 , H01L2924/12044 , H01L2924/19041 , H01L2924/30105 , H01L2924/3011 , H01L2924/00 , H01L2224/48 , H01L2924/00011
摘要： With non-contact and contact IC chips becoming common, it is necessary to mass-produce enormous amount of IC chips, which are utilizable for human beings, animals and plants, commercial products, banknotes, and the like, at low cost. For example, it is necessary to manufacture IC chips to be applied to commercial products, banknotes, and the like at a cost of 1 to several yen per IC chip, preferably, at a cost less than 1 yen, and it is desired to realize a structure of an IC chip that can be mass-produced at low cost and a manufacturing process of the IC chip.A method of manufacturing a thin film integrated circuit device according to the present invention includes steps of forming a peel-off layer over a thermally oxidized silicon substrate, forming a plurality of thin film integrated circuit devices over the peel-off layer with a base film interposed therebetween, forming a groove between the plurality of thin film integrated circuit devices, and separating the plurality of thin film integrated circuit devices by introducing one of a gas and a liquid including halogen fluoride into the groove to remove the peel-off layer.

2. 发明授权

US07271076B2 Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device 有权
标题翻译：薄膜集成电路器件的制造方法和非接触式薄膜集成电路器件的制造方法
公开(公告)号：US07271076B2
公开(公告)日：2007-09-18
申请号：US11007645
申请日：2004-12-09
申请人： Shunpei Yamazaki , Toru Takayama , Yohei Kanno
发明人： Shunpei Yamazaki , Toru Takayama , Yohei Kanno
IPC分类号： H01L21/46 , H01L21/30 , H01L21/762
CPC分类号： H01L21/6835 , G06K19/0704 , G06K19/0723 , G06K19/07703 , G06K19/07718 , G06K19/07745 , G06K19/07749 , G06K19/0775 , G06K19/07758 , G06K19/07779 , G06K19/07781 , G06K19/07783 , H01L23/49855 , H01L2221/68318 , H01L2221/68359 , H01L2221/68368 , H01L2224/45147 , H01L2224/49171 , H01L2924/00014 , H01L2924/01015 , H01L2924/01047 , H01L2924/10253 , H01L2924/12044 , H01L2924/19041 , H01L2924/30105 , H01L2924/3011 , H01L2924/00 , H01L2224/48 , H01L2924/00011
摘要： A method of manufacturing a thin film integrated circuit device according to the present invention includes steps of forming a peel-off layer over a thermally oxidized silicon substrate, forming a plurality of thin film integrated circuit devices over the peel-off layer with a base film interposed therebetween, forming a groove between the plurality of thin film integrated circuit devices, and separating the plurality of thin film integrated circuit devices by introducing one of a gas and a liquid including halogen fluoride into the groove to remove the peel-off layer.
摘要翻译：根据本发明的制造薄膜集成电路器件的方法包括以下步骤：在热氧化硅衬底上形成剥离层，在剥离层上形成多个薄膜集成电路器件，底片在所述多个薄膜集成电路器件之间形成沟槽，并且通过将包含卤素氟化物的气体和液体中的一种引入到所述沟槽中以去除所述剥离层来分离所述多个薄膜集成电路器件。

3. 发明申请

US20080009125A1 Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device 有权
标题翻译：薄膜集成电路器件的制造方法和非接触式薄膜集成电路器件的制造方法
公开(公告)号：US20080009125A1
公开(公告)日：2008-01-10
申请号：US11896509
申请日：2007-09-04
申请人： Shunpei Yamazaki , Toru Takayama , Yohei Kanno
发明人： Shunpei Yamazaki , Toru Takayama , Yohei Kanno
IPC分类号： H01L21/30 , H01L21/84
CPC分类号： H01L21/6835 , G06K19/0704 , G06K19/0723 , G06K19/07703 , G06K19/07718 , G06K19/07745 , G06K19/07749 , G06K19/0775 , G06K19/07758 , G06K19/07779 , G06K19/07781 , G06K19/07783 , H01L23/49855 , H01L2221/68318 , H01L2221/68359 , H01L2221/68368 , H01L2224/45147 , H01L2224/49171 , H01L2924/00014 , H01L2924/01015 , H01L2924/01047 , H01L2924/10253 , H01L2924/12044 , H01L2924/19041 , H01L2924/30105 , H01L2924/3011 , H01L2924/00 , H01L2224/48 , H01L2924/00011
摘要： With non-contact and contact IC chips becoming common, it is necessary to mass-produce enormous amount of IC chips, which are utilizable for human beings, animals and plants, commercial products, banknotes, and the like, at low cost. For example, it is necessary to manufacture IC chips to be applied to commercial products, banknotes, and the like at a cost of 1 to several yen per IC chip, preferably, at a cost less than 1 yen, and it is desired to realize a structure of an IC chip that can be mass-produced at low cost and a manufacturing process of the IC chip. A method of manufacturing a thin film integrated circuit device according to the present invention includes steps of forming a peel-off layer over a thermally oxidized silicon substrate, forming a plurality of thin film integrated circuit devices over the peel-off layer with a base film interposed therebetween, forming a groove between the plurality of thin film integrated circuit devices, and separating the plurality of thin film integrated circuit devices by introducing one of a gas and a liquid including halogen fluoride into the groove to remove the peel-off layer.
摘要翻译：随着非接触式和接触式IC芯片的普及，需要大量生产大量可用于人类，动植物，商业产品，纸币等的IC芯片，成本低廉。例如，以IC成本为1〜数日元的成本，优选以不到1日元的成本为代价，制造适用于商品，纸币等的IC芯片是有必要的。可以低成本大量生产的IC芯片的结构和IC芯片的制造工艺。根据本发明的制造薄膜集成电路器件的方法包括以下步骤：在热氧化硅衬底上形成剥离层，在剥离层上形成多个薄膜集成电路器件，底片在所述多个薄膜集成电路器件之间形成沟槽，并且通过将包含卤素氟化物的气体和液体中的一种引入到所述沟槽中以去除所述剥离层来分离所述多个薄膜集成电路器件。

4. 发明申请

US20050148121A1 Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device 有权
标题翻译：薄膜集成电路器件的制造方法和非接触式薄膜集成电路器件的制造方法
公开(公告)号：US20050148121A1
公开(公告)日：2005-07-07
申请号：US11007645
申请日：2004-12-09
申请人： Shunpei Yamazaki , Toru Takayama , Yohei Kanno
发明人： Shunpei Yamazaki , Toru Takayama , Yohei Kanno
IPC分类号： G06K19/07 , G06K19/077 , H01L21/00 , H01L21/68 , H01L21/82 , H01L23/02 , H01L23/498 , H01L27/00
CPC分类号： H01L21/6835 , G06K19/0704 , G06K19/0723 , G06K19/07703 , G06K19/07718 , G06K19/07745 , G06K19/07749 , G06K19/0775 , G06K19/07758 , G06K19/07779 , G06K19/07781 , G06K19/07783 , H01L23/49855 , H01L2221/68318 , H01L2221/68359 , H01L2221/68368 , H01L2224/45147 , H01L2224/49171 , H01L2924/00014 , H01L2924/01015 , H01L2924/01047 , H01L2924/10253 , H01L2924/12044 , H01L2924/19041 , H01L2924/30105 , H01L2924/3011 , H01L2924/00 , H01L2224/48 , H01L2924/00011
摘要： With non-contact and contact IC chips becoming common, it is necessary to mass-produce enormous amount of IC chips, which are utilizable for human beings, animals and plants, commercial products, banknotes, and the like, at low cost. For example, it is necessary to manufacture IC chips to be applied to commercial products, banknotes, and the like at a cost of 1 to several yen per IC chip, preferably, at a cost less than 1 yen, and it is desired to realize a structure of an IC chip that can be mass-produced at low cost and a manufacturing process of the IC chip. A method of-manufacturing a thin film integrated circuit device according to the present invention includes steps of forming a peel-off layer over a thermally oxidized silicon substrate, forming a plurality of thin film integrated circuit devices over the peel-off layer with a base film interposed therebetween, forming a groove between the plurality of thin film integrated circuit devices, and separating the plurality of thin film integrated circuit devices by introducing one of a gas and a liquid including halogen fluoride into the groove to remove the peel-off layer.
摘要翻译：随着非接触式和接触式IC芯片的普及，需要大量生产大量可用于人类，动植物，商业产品，纸币等的IC芯片，成本低廉。例如，以IC成本为1〜数日元的成本，优选以不到1日元的成本为代价，制造适用于商品，纸币等的IC芯片是有必要的。可以低成本大量生产的IC芯片的结构和IC芯片的制造工艺。根据本发明的制造薄膜集成电路器件的方法包括以下步骤：在热氧化硅衬底上形成剥离层，在剥离层上形成多个薄膜集成电路器件，基底在所述多个薄膜集成电路器件之间形成沟槽，并且通过将含有卤素氟化物的气体和液体中的一种引入到所述沟槽中以除去所述剥离层来分离所述多个薄膜集成电路器件。

5. 发明授权

US07975926B2 Paper money, coin, valuable instrument, certificates, tag, label, card, packing containers, documents, respectively installed with integrated circuit 有权
标题翻译：纸币，硬币，贵重仪器，证书，标签，标签，卡片，包装容器，文件，分别装有集成电路
公开(公告)号：US07975926B2
公开(公告)日：2011-07-12
申请号：US11017791
申请日：2004-12-22
申请人： Shunpei Yamazaki , Yasuyuki Arai , Yohei Kanno
发明人： Shunpei Yamazaki , Yasuyuki Arai , Yohei Kanno
IPC分类号： G06K19/00
CPC分类号： G07F7/1008 , G06K19/07309 , G06K19/07749 , G06Q20/346
摘要： Although a product having such the IC chip has been diffused, information on the product may be capable of being perceived, abstracted, falsified, or the like by a third person with his external device during distribution of the product or after purchase of the product. Further, privacy may be seriously infringed. Paper money, various products, and the like are disclosed according to the present invention with an integrated circuit device having a switching memory for controlling reading and writing of information (lock/unlock of information) in order to protect the information recorded and stored in the integrated circuit such as an IC chip installed to the product or the like.
摘要翻译：虽然具有这样的IC芯片的产品已经被散布，但是在产品分发期间或购买产品之后，产品的信息可能被外部设备的第三人在被感知，抽象，伪造等方面被感知，抽象化，伪造等。此外，隐私可能会严重侵犯。根据本发明公开了纸币，各种产品等，其具有集成电路装置，具有用于控制信息的读取和写入（信息的锁定/解锁）的切换存储器，以便保护记录和存储在信息中的信息集成电路，例如安装在产品上的IC芯片等。

6. 发明授权

US07868957B2 Thin film transistor, display device and liquid crystal display device and method for manufacturing the same 有权
标题翻译：薄膜晶体管，显示装置和液晶显示装置及其制造方法
公开(公告)号：US07868957B2
公开(公告)日：2011-01-11
申请号：US10573775
申请日：2004-11-30
申请人： Shunpei Yamazaki , Shinji Maekawa , Yohei Kanno
发明人： Shunpei Yamazaki , Shinji Maekawa , Yohei Kanno
IPC分类号： G02F1/1368 , H01L21/336 , H01L21/288
CPC分类号： H01L21/288 , H01L21/28008 , H01L21/76838 , H01L27/1292 , H01L29/66765 , H01L29/78669 , H01L29/78678 , H01L2224/73265
摘要： As a wiring becomes thicker, discontinuity of an insulating film covering the wiring has become a problem. It is difficult to form a wiring with width thin enough for a thin film transistor used for a current high definition display device. As a wiring is made thinner, signal delay due to wiring resistance has become a problem. In view of the above problems, the invention provides a structure in which a conductive film is formed in a hole of an insulating film, and the surfaces of the conductive film and the insulating film are flat. As a result, discontinuity of thin films covering a conductive film and an insulating film can be prevented. A wiring can be made thinner by controlling the width of the hole. Further, a wiring can be made thicker by controlling the depth of the hole.
摘要翻译：随着布线变厚，覆盖布线的绝缘膜的不连续性成为问题。对于用于当前的高分辨率显示装置的薄膜晶体管，难以形成宽度足够薄的布线。由于布线变薄，由于布线电阻引起的信号延迟已经成为问题。鉴于上述问题，本发明提供一种在绝缘膜的孔中形成导电膜，并且导电膜和绝缘膜的表面平坦的结构。结果，可以防止覆盖导电膜和绝缘膜的薄膜的不连续性。通过控制孔的宽度可以使布线更薄。此外，通过控制孔的深度，可以使布线变厚。

7. 发明申请

US20070085112A1 Thin film transistor, display device and liquid crystal display device and method for manufacturing the same 有权
标题翻译：薄膜晶体管，显示装置和液晶显示装置及其制造方法
公开(公告)号：US20070085112A1
公开(公告)日：2007-04-19
申请号：US10573775
申请日：2004-11-30
申请人： Shunpei Yamazaki , Shinji Maekawa , Yohei Kanno
发明人： Shunpei Yamazaki , Shinji Maekawa , Yohei Kanno
IPC分类号： H01L29/76
CPC分类号： H01L21/288 , H01L21/28008 , H01L21/76838 , H01L27/1292 , H01L29/66765 , H01L29/78669 , H01L29/78678 , H01L2224/73265
摘要： As a wiring becomes thicker, discontinuity of an insulating film covering the wiring has become a problem. It is difficult to form a wiring with width thin enough for a thin film transistor used for a current high definition display device. As a wiring is made thinner, signal delay due to wiring resistance has become a problem. In view of the above problems, the invention provides a structure in which a conductive film is formed in a hole of an insulating film, and the surfaces of the conductive film and the insulating film are flat. As a result, discontinuity of thin films covering a conductive film and an insulating film can be prevented. A wiring can be made thinner by controlling the width of the hole. Further, a wiring can be made thicker by controlling the depth of the hole.
摘要翻译：随着布线变厚，覆盖布线的绝缘膜的不连续性成为问题。对于用于当前的高分辨率显示装置的薄膜晶体管，难以形成宽度足够薄的布线。由于布线变薄，由于布线电阻引起的信号延迟已经成为问题。鉴于上述问题，本发明提供一种在绝缘膜的孔中形成导电膜，并且导电膜和绝缘膜的表面平坦的结构。结果，可以防止覆盖导电膜和绝缘膜的薄膜的不连续性。通过控制孔的宽度可以使布线更薄。此外，通过控制孔的深度，可以使布线变厚。

8. 发明申请

US20050141256A1 Paper money, coin, valuable instrument, certificates, tag, label, card, packing containers, documents, respectively installed with integrated circuit 有权
标题翻译：纸币，硬币，贵重仪器，证书，标签，标签，卡片，包装容器，文件，分别装有集成电路
公开(公告)号：US20050141256A1
公开(公告)日：2005-06-30
申请号：US11017791
申请日：2004-12-22
申请人： Shunpei Yamazaki , Yasuyuki Arai , Yohei Kanno
发明人： Shunpei Yamazaki , Yasuyuki Arai , Yohei Kanno
IPC分类号： G06K19/073 , G06K19/077 , G07F7/10 , G11C17/00
CPC分类号： G07F7/1008 , G06K19/07309 , G06K19/07749 , G06Q20/346
摘要： Although a product having such the IC chip has been diffused, information on the product may be capable of being perceived, abstracted, falsified, or the like by a third person with his external device during distribution of the product or after purchase of the product. Further, privacy may be seriously infringed. Paper money, various products, and the like are disclosed according to the present invention with an integrated circuit device having a switching memory for controlling reading and writing of information (lock/unlock of information) in order to protect the information recorded and stored in the integrated circuit such as an IC chip installed to the product or the like.
摘要翻译：虽然具有这样的IC芯片的产品已经被散布，但是在产品分发期间或购买产品之后，产品的信息可能被外部设备的第三人在被感知，抽象，伪造等方面被感知，抽象化，伪造等。此外，隐私可能会严重侵犯。根据本发明公开了纸币，各种产品等，其具有集成电路装置，具有用于控制信息的读取和写入（信息的锁定/解锁）的切换存储器，以便保护记录和存储在信息中的信息集成电路，例如安装在产品上的IC芯片等。

9. 发明授权

US08322847B2 Liquid droplet ejection system and control program of ejection condition of compositions 有权
标题翻译：液滴喷射系统和组合物喷射条件控制程序
公开(公告)号：US08322847B2
公开(公告)日：2012-12-04
申请号：US13049078
申请日：2011-03-16
申请人： Shunpei Yamazaki , Jun Koyama , Yasuyuki Arai , Shinji Maekawa , Yohei Kanno
发明人： Shunpei Yamazaki , Jun Koyama , Yasuyuki Arai , Shinji Maekawa , Yohei Kanno
IPC分类号： B41J2/01 , B05B7/06 , H01L21/36
CPC分类号： H01L51/0004 , H01L51/56 , H05K1/0269 , H05K3/0008 , H05K3/1241
摘要： When using a liquid droplet ejection method, a conventional photomask is not required, however, it is required instead that a moving path of a nozzle or a substrate is controlled with accuracy at least in ejecting liquid droplets. According to the characteristics of compositions to be ejected or their pattern, such ejection conditions are desirably set as the moving rate of a nozzle or a substrate, ejection quantity, ejection distance and ejection rate of compositions, atmosphere of the space that the compositions are ejected, the temperature and moisture of the space, and heating temperature of the substrate. A liquid droplet ejection system in accordance with the invention comprises an input means for inputting data of a thin film pattern, a set means for setting a nozzle for a ejecting a composition containing a material for forming the thin film or setting a moving path of the substrate to which the composition is ejected, an image pick-up means for detecting an alignment marker formed on a substrate and a control means for controlling the moving path of the nozzle or the substrate.
摘要翻译：当使用液滴喷射方法时，不需要常规的光掩模，然而，需要至少在喷射液滴时精确地控制喷嘴或基板的移动路径。根据要喷射的组合物或其图案的特征，这种喷射条件期望设置为喷嘴或基底的移动速率，喷射量，喷射距离和组合物的喷射速率，组合物喷出的空间的气氛，空间的温度和湿度，以及基板的加热温度。根据本发明的液滴喷射系统包括用于输入薄膜图案的数据的输入装置，用于设置用于喷射包含用于形成薄膜的材料的组合物的喷嘴的设定装置或设置该薄膜图案的移动路径用于检测形成在基板上的取向标记的图像拾取装置和用于控制喷嘴或基板的移动路径的控制装置。

10. 发明授权

US08228453B2 Thin film transistor, display device and liquid crystal display device and method for manufacturing the same 有权
标题翻译：薄膜晶体管，显示装置和液晶显示装置及其制造方法
公开(公告)号：US08228453B2
公开(公告)日：2012-07-24
申请号：US12984627
申请日：2011-01-05
申请人： Shunpei Yamazaki , Shinji Maekawa , Yohei Kanno
发明人： Shunpei Yamazaki , Shinji Maekawa , Yohei Kanno
IPC分类号： G02F1/1368
CPC分类号： H01L21/288 , H01L21/28008 , H01L21/76838 , H01L27/1292 , H01L29/66765 , H01L29/78669 , H01L29/78678 , H01L2224/73265
摘要： As a wiring becomes thicker, discontinuity of an insulating film covering the wiring has become a problem. It is difficult to form a wiring with width thin enough for a thin film transistor used for a current high definition display device. As a wiring is made thinner, signal delay due to wiring resistance has become a problem. In view of the above problems, the invention provides a structure in which a conductive film is formed in a hole of an insulating film, and the surfaces of the conductive film and the insulating film are flat. As a result, discontinuity of thin films covering a conductive film and an insulating film can be prevented. A wiring can be made thinner by controlling the width of the hole. Further, a wiring can be made thicker by controlling the depth of the hole.
摘要翻译：随着布线变厚，覆盖布线的绝缘膜的不连续性成为问题。对于用于当前的高分辨率显示装置的薄膜晶体管，难以形成宽度足够薄的布线。由于布线变薄，由于布线电阻引起的信号延迟已经成为问题。鉴于上述问题，本发明提供一种在绝缘膜的孔中形成导电膜，并且导电膜和绝缘膜的表面平坦的结构。结果，可以防止覆盖导电膜和绝缘膜的薄膜的不连续性。通过控制孔的宽度可以使布线更薄。此外，通过控制孔的深度，可以使布线变厚。

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