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1. 发明授权

US08415679B2 Semiconductor device and manufacturing method thereof 有权
公开(公告)号：US08415679B2
公开(公告)日：2013-04-09
申请号：US13461249
申请日：2012-05-01
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
IPC分类号： H01L27/14
CPC分类号： H01L27/1218 , H01L23/291 , H01L27/1214 , H01L27/1266 , H01L27/3244 , H01L29/66757 , H01L29/78603 , H01L51/0002 , H01L51/0021 , H01L51/0024 , H01L51/003 , H01L2221/68368 , H01L2924/0002 , Y10S438/928 , Y10S438/982 , H01L2924/00
摘要： It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.

2. 发明授权

US08228454B2 Peeling method and method for manufacturing display device using the peeling method 有权
标题翻译：使用剥离方法制造显示装置的剥离方法和方法
公开(公告)号：US08228454B2
公开(公告)日：2012-07-24
申请号：US12720761
申请日：2010-03-10
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno
IPC分类号： G02F1/1343
CPC分类号： H01L27/1218 , H01L21/02175 , H01L21/28008 , H01L21/324 , H01L21/425 , H01L21/707 , H01L21/823487 , H01L27/1214 , H01L27/1266 , H01L27/156 , H01L27/3244 , H01L29/78603 , H01L33/005 , H01L33/0054 , H01L51/003 , H01L51/56 , H01L2221/68368 , H01L2227/326 , H01L2933/0016
摘要： The present invention provides a simplifying method for a peeling process as well as peeling and transcribing to a large-size substrate uniformly. A feature of the present invention is to peel a first adhesive and to cure a second adhesive at the same time in a peeling process, thereby to simplify a manufacturing process. In addition, the present invention is to devise the timing of transcribing a peel-off layer in which up to an electrode of a semiconductor are formed to a predetermined substrate. In particular, a feature is that peeling is performed by using a pressure difference in the case that peeling is performed with a state in which plural semiconductor elements are formed on a large-size substrate.
摘要翻译：本发明提供了一种剥离方法的简化方法以及均匀地剥离和转录到大尺寸基板。本发明的一个特征是剥离第一粘合剂并在剥离过程中同时固化第二粘合剂，从而简化制造过程。另外，本发明是为了将形成半导体的电极的剥离层转印为规定的基板的时机。特别地，特征在于，在大尺寸基板上形成有多个半导体元件的状态下进行剥离的情况下，通过使用压差来进行剥离。

3. 发明授权

US08212364B2 Method for manufacturing semiconductor apparatus, and semiconductor apparatus and electric appliance 有权
标题翻译：半导体装置的制造方法以及半导体装置及电器
公开(公告)号：US08212364B2
公开(公告)日：2012-07-03
申请号：US11440116
申请日：2006-05-25
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno , Koichiro Tanaka
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno , Koichiro Tanaka
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/02667 , C30B13/24 , C30B29/06 , H01L21/02683 , H01L21/02686 , H01L21/2026 , H01L21/6835 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/81 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2221/68354 , H01L2221/68359 , H01L2221/68363 , H01L2221/68368 , H01L2223/54473 , H01L2224/1134 , H01L2224/16145 , H01L2224/16225 , H01L2224/16235 , H01L2224/29198 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73204 , H01L2224/73265 , H01L2224/81203 , H01L2224/81205 , H01L2224/81801 , H01L2224/83102 , H01L2224/83192 , H01L2224/92125 , H01L2224/92247 , H01L2225/06524 , H01L2225/06555 , H01L2225/1023 , H01L2225/1058 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/0106 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01084 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/15183 , H01L2924/15311 , H01L2924/15331 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/30105 , H01L2924/3025 , H01L2924/00014 , H01L2924/00012 , H01L2224/13099 , H01L2924/00 , H01L2924/3512
摘要： The present invention is directed to a semiconductor device having: an interposer; a wiring provided on the interposer; a first chip having a first semiconductor device, a first pad and a first solder ball over the interposer, the first semiconductor device being connected to the first pad and the first pad being connected to the first solder ball; a second chip having a second semiconductor device, a second pad and a second solder ball over the first chip, the second semiconductor device being connected to the second pad and the second pad being connected to the second solder ball; and a terminal provided at a rear side of the interposer, where the wiring and the first chip are connected via the first solder ball, where the first chip and the second chip are connected via the second solder ball, and where the terminal is connected to the first semiconductor device.
摘要翻译：本发明涉及一种具有：插入件的半导体器件; 布置在插入器上的布线; 第一芯片，具有第一半导体器件，第一焊盘和位于插入件上的第一焊球，第一半导体器件连接到第一焊盘，第一焊盘连接到第一焊球; 具有第二半导体器件的第二芯片，第二焊盘和位于第一芯片上的第二焊球，第二半导体器件连接到第二焊盘，第二焊盘连接到第二焊球; 以及设置在所述插入件的后侧的端子，其中所述布线和所述第一芯片经由所述第一焊球连接，其中所述第一芯片和所述第二芯片经由所述第二焊球连接，并且所述端子连接到第一个半导体器件。

4. 发明授权

US08044946B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08044946B2
公开(公告)日：2011-10-25
申请号：US12823182
申请日：2010-06-25
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Yasuyuki Arai , Noriko Shibata
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Yasuyuki Arai , Noriko Shibata
IPC分类号： H05K5/00
CPC分类号： H01L51/0024 , G02F1/13306 , G02F1/1339 , G02F1/1341 , G02F1/134309 , G02F1/13439 , G02F1/13452 , G02F1/13454 , G02F1/1368 , G02F2001/13456 , G02F2202/28 , H01L21/2007 , H01L21/67196 , H01L21/67207 , H01L21/67236 , H01L21/6835 , H01L21/76251 , H01L25/0657 , H01L25/50 , H01L27/1214 , H01L27/1222 , H01L27/124 , H01L27/1266 , H01L27/1274 , H01L27/15 , H01L27/3248 , H01L27/3272 , H01L27/3276 , H01L29/78675 , H01L51/003 , H01L51/5012 , H01L51/5056 , H01L51/5072 , H01L51/5088 , H01L51/5092 , H01L51/5096 , H01L51/5206 , H01L51/5221 , H01L51/56 , H01L2221/68368 , H01L2224/05001 , H01L2224/05009 , H01L2224/05025 , H01L2224/13025 , H01L2224/16 , H01L2225/06524 , H01L2225/06548 , H01L2225/06555 , H01L2225/06586 , H01L2227/323 , H01L2227/326 , H01L2251/308 , H01L2251/5323 , H01L2924/00014 , H01L2924/01004 , H01L2924/01025 , H01L2924/01046 , H01L2924/01055 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/12044 , H01L2924/3025 , H01L2924/00 , H01L2224/05599 , H01L2224/05099
摘要： The present invention intends to realize a narrow frame of a system on panel. In addition to this, a system mounted on a panel is intended to make higher and more versatile in the functionality. In the invention, on a panel on which a pixel portion (including a liquid crystal element, a light-emitting element) and a driving circuit are formed, integrated circuits that have so far constituted an external circuit are laminated and formed. Specifically, of the pixel portion and the driving circuit on the panel, on a position that overlaps with the driving circuit, any one kind or a plurality of kinds of the integrated circuits is formed by laminating according to a transcription technique.
摘要翻译：本发明旨在实现面板上系统的窄帧。除此之外，安装在面板上的系统旨在使功能更高更通用。在本发明中，在形成有像素部（包括液晶元件，发光元件）和驱动电路的面板上，层叠形成了构成外部电路的集成电路。具体地，在面板上的像素部分和驱动电路中，在与驱动电路重叠的位置上，根据转录技术层叠形成任何一种或多种集成电路。

5. 发明授权

US08012854B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08012854B2
公开(公告)日：2011-09-06
申请号：US13045560
申请日：2011-03-11
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
IPC分类号： H01L21/30
CPC分类号： H01L27/1218 , H01L23/291 , H01L27/1214 , H01L27/1266 , H01L27/3244 , H01L29/66757 , H01L29/78603 , H01L51/0002 , H01L51/0021 , H01L51/0024 , H01L51/003 , H01L2221/68368 , H01L2924/0002 , Y10S438/928 , Y10S438/982 , H01L2924/00
摘要： It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.
摘要翻译：本发明的目的是提供一种不会对被剥离层造成损伤的剥离方法，并且不仅使表面积小的层被剥离，而且还允许具有大表面积的被剥离层要完全去皮。此外，本发明的另一个目的是将要剥离的层粘合到各种基材上以提供更轻的半导体器件及其制造方法。特别地，目的是将由TFT表示的各种元素（薄膜二极管，包含硅的PIN结的光电转换元件或硅电阻元件）粘合到柔性膜上以提供更轻的半导体器件和其制造方法。

6. 发明授权

US07622797B2 Semiconductor device having a flexible printed circuit 有权
标题翻译：具有柔性印刷电路的半导体器件
公开(公告)号：US07622797B2
公开(公告)日：2009-11-24
申请号：US12249523
申请日：2008-10-10
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Yasuyuki Arai , Noriko Shibata
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Yasuyuki Arai , Noriko Shibata
IPC分类号： G09G3/36
CPC分类号： H01L27/1266 , H01L21/6835 , H01L27/1214 , H01L2221/68368 , H01L2224/05172 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/07811 , H01L2924/00 , H01L2224/05624 , H01L2924/00014 , H01L2224/05639 , H01L2224/05647 , H01L2224/05664 , H01L2224/05681 , H01L2224/05684 , H01L2224/05124 , H01L2224/05147 , H01L2224/05184
摘要： To provide a thin film device which becomes possible to be formed in the portion which has been considered impossible to be provided with such device by the conventional technique, and to provide a semiconductor device which occupies small space and which has high shock resistance and flexibility, a device formation layer with a thickness of at most 50 μm which was peeled from a substrate by a transfer technique is transferred to another substrate, hence, a thin film device can be formed over various substrates. For instance, a semiconductor device can be formed so as to occupy small space by pasting a thin film device which is transferred to a flexible substrate onto a rear surface of a substrate of a panel, by pasting directly a thin film device onto a rear surface of a substrate of a panel, or by transferring a thin film device to an FPC which is pasted onto a substrate of a panel.
摘要翻译：为了提供可以在通过常规技术被认为不可能设置这种器件的部分中形成的薄膜器件，并且提供占据小空间并且具有高抗冲击性和柔性的半导体器件，通过转印技术将从基板剥离的厚度最多为50μm的元件形成层转移到另一基板，因此可以在各种基板上形成薄膜器件。例如，可以通过将薄膜器件直接粘贴到背面上来形成半导体器件，以便占据较小的空间，该薄膜器件被传送到柔性衬底到面板的衬底的背面上或者通过将薄膜器件转移到贴在面板的基板上的FPC上。

7. 发明授权

US07407870B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07407870B2
公开(公告)日：2008-08-05
申请号：US11410073
申请日：2006-04-25
申请人： Junya Maruyama , Yumiko Ohno , Toru Takayama , Yuugo Goto , Shunpei Yamazaki
发明人： Junya Maruyama , Yumiko Ohno , Toru Takayama , Yuugo Goto , Shunpei Yamazaki
IPC分类号： H01L21/46
CPC分类号： H01L27/1266 , H01L21/6835 , H01L27/1214 , H01L2221/68359 , H01L2221/68368 , H01L2924/3025
摘要： The present invention is a separation method for easy separation of an allover release layer with a large area. Further, the present invention is the separating method that is not subjected to restrictions in the use of substrates, such as a kind of substrate, during forming a release layer. A separation method comprising the steps of forming a metal film, a first oxide, and a semiconductor film containing hydrogen in this order; and bonding a support to a release layer containing the first oxide and the semiconductor film and separating the release layer bonded to the support from a substrate provided with the metal layer by a physical means. Through the separation method, heat treatment is carried out to diffuse hydrogen contained in the semiconductor film, a third oxide is formed by reducing a second oxide formed at a surface boundary between the metal film and the first oxide film, and a film containing the second oxide and the third oxide, a surface boundary between the film containing the second oxide and the third oxide, and the metal film, or a surface boundary between the film containing the second oxide and the third oxide, and the first oxide is split.
摘要翻译：本发明是用于容易地分离大面积的全层释放层的分离方法。此外，本发明是在形成剥离层期间不受使用诸如基板的基板的限制的分离方法。一种分离方法，包括以下步骤：依次形成含有氢的金属膜，第一氧化物和半导体膜; 以及将载体接合到包含第一氧化物和半导体膜的剥离层，并且通过物理手段从与设置有金属层的基板分离结合到载体的剥离层。通过分离方法，进行热处理以扩散半导体膜中所含的氢，通过还原在金属膜和第一氧化物膜之间的表面边界处形成的第二氧化物和包含第二氧化物的膜形成第三氧化物氧化物和第三氧化物，含有第二氧化物的膜和第三氧化物的膜与金属膜之间的表面边界或含有第二氧化物的膜和第三氧化物之间的表面边界以及第一氧化物被分裂。

8. 发明授权

US07303942B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07303942B2
公开(公告)日：2007-12-04
申请号：US10735767
申请日：2003-12-16
申请人： Hideaki Kuwabara , Junya Maruyama , Yumiko Ohno , Toru Takayama , Yuugo Goto , Etsuko Arakawa , Shunpei Yamazaki
发明人： Hideaki Kuwabara , Junya Maruyama , Yumiko Ohno , Toru Takayama , Yuugo Goto , Etsuko Arakawa , Shunpei Yamazaki
IPC分类号： H01L21/44
CPC分类号： H01L21/6835 , H01L21/563 , H01L24/27 , H01L24/29 , H01L24/81 , H01L24/83 , H01L29/0657 , H01L29/66757 , H01L29/78675 , H01L2221/68359 , H01L2221/68368 , H01L2224/0401 , H01L2224/04026 , H01L2224/13111 , H01L2224/13144 , H01L2224/16225 , H01L2224/274 , H01L2224/29101 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32225 , H01L2224/73204 , H01L2224/81191 , H01L2224/81801 , H01L2224/83192 , H01L2224/838 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/04953 , H01L2924/0665 , H01L2924/0781 , H01L2924/12042 , H01L2924/14 , H01L2924/1517 , H01L2924/15311 , H01L2924/1579 , H01L2924/3511 , H01L2924/00 , H01L2924/00012 , H01L2924/01014 , H01L2924/3512 , H01L2924/00014 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299
摘要： It is an object of the present invention to provide a technique for making a semiconductor device thinner without using a back-grinding method for a silicon wafer. According to the present invention, an integrated circuit film is mounted, thereby making a semiconductor device mounting the integrated circuit film thinner. The term “an integrated circuit film” means a film-like integrated circuit which is manufactured based on an integrated circuit manufactured by a semiconductor film formed over a substrate such as a glass substrate or a quartz substrate. In the present invention, the integrated circuit film is manufactured by a technique for transferring.
摘要翻译：本发明的目的是提供一种使半导体器件更薄而不使用用于硅晶片的后磨法的技术。根据本发明，安装集成电路膜，从而使得安装集成电路膜的半导体器件更薄。术语“集成电路膜”是指基于由诸如玻璃基板或石英基板的基板上形成的半导体膜制成的集成电路制造的膜状集成电路。在本发明中，通过转印技术制造集成电路膜。

9. 发明申请

US20070211189A1 Peeling method and method for manufacturing display device using the peeling method 有权
标题翻译：使用剥离方法制造显示装置的剥离方法和方法
公开(公告)号：US20070211189A1
公开(公告)日：2007-09-13
申请号：US11797535
申请日：2007-05-04
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno
IPC分类号： G02F1/136
CPC分类号： H01L27/1218 , H01L21/02175 , H01L21/28008 , H01L21/324 , H01L21/425 , H01L21/707 , H01L21/823487 , H01L27/1214 , H01L27/1266 , H01L27/156 , H01L27/3244 , H01L29/78603 , H01L33/005 , H01L33/0054 , H01L51/003 , H01L51/56 , H01L2221/68368 , H01L2227/326 , H01L2933/0016
摘要： The present invention provides a simplifying method for a peeling process as well as peeling and transcribing to a large-size substrate uniformly. A feature of the present invention is to peel a first adhesive and to cure a second adhesive at the same time in a peeling process, thereby to simplify a manufacturing process. In addition, the present invention is to devise the timing of transcribing a peel-off layer in which up to an electrode of a semiconductor are formed to a predetermined substrate. In particular, a feature is that peeling is performed by using a pressure difference in the case that peeling is performed with a state in which plural semiconductor elements are formed on a large-size substrate.
摘要翻译：本发明提供了一种剥离方法的简化方法以及均匀地剥离和转录到大尺寸基板。本发明的一个特征是剥离第一粘合剂并在剥离过程中同时固化第二粘合剂，从而简化制造过程。另外，本发明是为了将形成半导体的电极的剥离层转印为规定的基板的时机。特别地，特征在于，在大尺寸基板上形成有多个半导体元件的状态下进行剥离的情况下，通过使用压差来进行剥离。

10. 发明申请

US20070158745A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070158745A1
公开(公告)日：2007-07-12
申请号：US11713606
申请日：2007-03-05
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
IPC分类号： H01L27/12 , H01L27/01
CPC分类号： H01L27/1218 , H01L23/291 , H01L27/1214 , H01L27/1266 , H01L27/3244 , H01L29/66757 , H01L29/78603 , H01L51/0002 , H01L51/0021 , H01L51/0024 , H01L51/003 , H01L2221/68368 , H01L2924/0002 , Y10S438/928 , Y10S438/982 , H01L2924/00
摘要： (Object) It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof. (Solving Means) When a metal layer 11 is provided over a substrate, an oxide layer 12 is provided in contact with the metal layer 11, a layer to be peeled 13 is formed, and the metal layer 11 is irradiated with a laser beam to perform oxidization and form a metal oxide layer 16, a clear separation is possible with a physical means within the metal oxide layer 12 or at an interface between the metal oxide layer 16 and the oxide layer 12.
摘要翻译：（对象）本发明的目的是提供一种不会对被剥离层造成损害的剥离方法，并且不仅允许以小的表面积剥离层，而且还可以使用剥离层大的表面积要完全剥离。此外，本发明的另一个目的是将要剥离的层粘合到各种基材上以提供更轻的半导体器件及其制造方法。特别地，目的是将由TFT表示的各种元素（薄膜二极管，包含硅的PIN结的光电转换元件或硅电阻元件）粘合到柔性膜上以提供更轻的半导体器件和其制造方法。（解决方案）当在基板上设置金属层11时，设置与金属层11接触的氧化物层12，形成被剥离层13，并且用激光束照射金属层11 进行氧化并形成金属氧化物层16，通过金属氧化物层12内的物理手段或金属氧化物层16与氧化物层12之间的界面，可以进行清晰的分离。

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