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1. 发明授权

US09905809B2 Light emitting device 有权
公开(公告)号：US09905809B2
公开(公告)日：2018-02-27
申请号：US13205872
申请日：2011-08-09
申请人： Satoshi Seo , Takeshi Noda , Shunpei Yamazaki
发明人： Satoshi Seo , Takeshi Noda , Shunpei Yamazaki
IPC分类号： H01L33/60 , H01L51/52 , H01L51/50 , H01L27/32
CPC分类号： H01L51/5278 , H01L27/3211 , H01L27/3244 , H01L51/5044 , H01L51/5218 , H01L51/5265
摘要： It is an object of the invention to provide a light emitting device which can display a superior image in which luminescent color from each light emitting layer is beautifully displayed and power consumption is lowered in a light emitting element in which light emitting layers are stacked. One feature of the invention is that, in a light emitting element which comprises light emitting layers stacked between electrodes, each distance between each light emitting layer and an electrode is approximately oddly multiplied ¼ wavelength by controlling a thickness of a layer provided therebetween to enhance luminous output efficiency. Another feature of the invention is that a drive voltage is lowered using a high conductive material for the layer compared with a conventional element.

2. 发明授权

US09088002B2 Light-emitting device and manufacturing method thereof 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US09088002B2
公开(公告)日：2015-07-21
申请号：US13370958
申请日：2012-02-10
申请人： Hisao Ikeda , Satoshi Seo , Shunpei Yamazaki
发明人： Hisao Ikeda , Satoshi Seo , Shunpei Yamazaki
IPC分类号： H01L29/08 , H01L51/50
CPC分类号： H01L51/5056 , H01L51/50 , H01L2251/552
摘要： An object of the present invention is to decrease the conductivity of a hole-injection layer (or a hole-transport layer) containing molybdenum oxide without decreasing the amount of molybdenum oxide so that crosstalk is prevented from occurring. A light-emitting element includes, between an anode and a cathode, an EL layer including at least a hole-injection layer and a light-emitting layer. In the light-emitting element, the hole-injection layer is provided between the anode and the light-emitting layer, and the hole-injection layer contains molybdenum oxide and an additive. The additive may be an alkali metal, an alkaline earth metal, a substance having a HOMO level of lower than or equal to −5.8 eV, or a substance having a hole mobility of lower than or equal to 10−7 cm2/Vs.
摘要翻译：本发明的目的是降低含有氧化钼的空穴注入层（或空穴传输层）的导电性，而不会减少氧化钼的量，从而防止发生串扰。发光元件在阳极和阴极之间包括至少包括空穴注入层和发光层的EL层。在发光元件中，空穴注入层设置在阳极和发光层之间，空穴注入层含有氧化钼和添加剂。添加剂可以是碱金属，碱土金属，HOMO含量低于或等于-5.8eV的物质或具有低于或等于10-7cm 2 / Vs的空穴迁移率的物质。

3. 发明授权

US09000458B2 Light-emitting element, light-emitting device, and display device 有权
标题翻译：发光元件，发光元件及显示元件
公开(公告)号：US09000458B2
公开(公告)日：2015-04-07
申请号：US13368872
申请日：2012-02-08
申请人： Satoshi Seo , Toshiki Sasaki , Nobuharu Ohsawa , Takahiro Ushikubo , Shunpei Yamazaki
发明人： Satoshi Seo , Toshiki Sasaki , Nobuharu Ohsawa , Takahiro Ushikubo , Shunpei Yamazaki
IPC分类号： H01L29/20 , H01L21/00 , H01L51/50 , H01L51/52
CPC分类号： H01L51/5265 , H01L27/3209 , H01L51/504 , H01L51/5044 , H01L51/5218 , H01L51/5234 , H01L51/5271 , H01L51/5278 , H01L2251/5376
摘要： A light-emitting element with which a reduction in power consumption and an improvement in productivity of a display device can be achieved is provided. A technique of manufacturing a display device with high productivity is provided. The light-emitting element includes an electrode having a reflective property, and a first light-emitting layer, a charge generation layer, a second light-emitting layer, and an electrode having a light-transmitting property stacked in this order over the electrode having a reflective property. The optical path length between the electrode having a reflective property and the first light-emitting layer is one-quarter of the peak wavelength of the emission spectrum of the first light-emitting layer. The optical path length between the electrode having a reflective property and the second light-emitting layer is three-quarters of the peak wavelength of the emission spectrum of the second light-emitting layer.
摘要翻译：提供了能够实现功率消耗的降低和显示装置的生产率的提高的发光元件。提供了一种以高生产率制造显示装置的技术。发光元件包括具有反射性的电极，以及第一发光层，电荷产生层，第二发光层和具有透光性的电极，该透光性依次层叠在具有反映属性。具有反射性的电极和第一发光层之间的光程长度是第一发光层的发射光谱的峰值波长的四分之一。具有反射性的电极和第二发光层之间的光程长度是第二发光层的发射光谱的峰值波长的四分之三。

4. 发明授权

US08968822B2 Light emitting apparatus and method of fabricating the same 有权
公开(公告)号：US08968822B2
公开(公告)日：2015-03-03
申请号：US12173265
申请日：2008-07-15
申请人： Shunpei Yamazaki , Masakazu Murakami , Satoshi Seo
发明人： Shunpei Yamazaki , Masakazu Murakami , Satoshi Seo
IPC分类号： B05D7/00 , H01L27/32 , H01L27/12 , H01L51/00 , H01L51/56
CPC分类号： H01L51/5203 , H01L27/12 , H01L27/322 , H01L27/3246 , H01L51/0003 , H01L51/0014 , H01L51/0037 , H01L51/0042 , H01L51/005 , H01L51/0059 , H01L51/5228 , H01L51/5262 , H01L51/56 , H01L2251/5315
摘要： Although an ink jet method known as a method of selectively forming a film of a high molecular species organic compound, can coat to divide an organic compound for emitting three kinds (R, G, B) of light in one step, film forming accuracy is poor, it is difficult to control the method and therefore, uniformity is not achieved and the constitution is liable to disperse. In contrast thereto, according to the invention, a film comprising a high molecular species material is formed over an entire face of a lower electrode connected to a thin film transistor by a coating method and thereafter, the film comprising the high molecular species material is etched by etching by plasma to thereby enable to selectively form a high molecular species material layer. Further, the organic compound layer is constituted by a material for carrying out luminescence of white color or luminescence of single color and combined with a color changing layer or a coloring layer to thereby realize full color formation.

5. 发明授权

US08895996B2 Light-emitting device and lighting device 有权
标题翻译：发光装置及照明装置
公开(公告)号：US08895996B2
公开(公告)日：2014-11-25
申请号：US13368449
申请日：2012-02-08
申请人： Shunpei Yamazaki , Satoshi Seo
发明人： Shunpei Yamazaki , Satoshi Seo
IPC分类号： H01L27/15 , H01L51/50 , H01L51/52
CPC分类号： H01L51/5278 , H01L51/5044 , H01L51/5088 , H01L51/5092
摘要： A light-emitting device and a lighting device each including a light-emitting element which can recover from a short circuit between a pair of electrodes by itself without adversely affecting the characteristics of the element is provided. An oxide layer is provided so as to be in contact with an electrode of the light-emitting element, whereby, due to heat generated when a short circuit is caused between a pair of electrodes, oxygen in the oxide layer and an electrode material in a short-circuited part are reacted with each other and the electrode material in the short-circuited part can be an insulator. Further, by providing an oxide layer in contact with an electron-injection layer containing an alkaline earth metal, an oxide of the alkaline earth metal can be formed, whereby moisture that enters the insulator formed by an insulation phenomenon in the short-circuited part can be adsorbed and removed.
摘要翻译：本发明提供一种发光装置和照明装置，其特征在于，具有发光元件，该发光元件本身可以从一对电极之间的短路中恢复，而不会不利地影响元件的特性。提供氧化层以与发光元件的电极接触，由此，由于在一对电极之间产生短路，在氧化物层中的氧和氧化物层中的电极材料短路部分彼此反应，并且短路部分中的电极材料可以是绝缘体。此外，通过提供与包含碱土金属的电子注入层接触的氧化物层，可以形成碱土金属的氧化物，由此在短路部分中通过绝缘现象形成的绝缘体中的水分可以被吸附和去除。

6. 发明授权

US08890407B2 Semiconductor device and light-emitting device 有权
标题翻译：半导体器件和发光器件
公开(公告)号：US08890407B2
公开(公告)日：2014-11-18
申请号：US13464969
申请日：2012-05-05
申请人： Hiroko Abe , Satoshi Seo , Shunpei Yamazaki
发明人： Hiroko Abe , Satoshi Seo , Shunpei Yamazaki
IPC分类号： H05B33/00 , H01L33/26 , H01L33/08 , H01L33/40 , G09G3/32 , H01L27/12 , G09G3/20
CPC分类号： H01L27/12 , G09G3/2022 , G09G3/3258 , G09G2300/0847 , G09G2310/0248 , G09G2310/0251 , H01L27/1214 , Y10S428/917
摘要： One feature of a semiconductor device of the present invention is to include an electrode that serves as an electrode of a light-emitting element. The electrode includes a first layer and a second layer. Further, end portions of the electrode are covered with a partition layer having an opening portion. Moreover, a part of the electrode is exposed by the opening portion of the partition layer. One feature of a semiconductor device of the present invention is to include an electrode that serves as an electrode of a light-emitting element and a transistor. The electrode and the transistor are connected electrically to each other. The electrode includes a first layer and a second layer. Further, end portions of the electrode are covered with a partition layer having an opening portion. Moreover, the second layer is exposed by the opening portion of the partition layer.
摘要翻译：本发明的半导体器件的一个特征是包括用作发光元件的电极的电极。电极包括第一层和第二层。此外，电极的端部被具有开口部分的隔离层覆盖。此外，电极的一部分被分隔层的开口部分露出。本发明的半导体器件的一个特征是包括用作发光元件和晶体管的电极的电极。电极和晶体管彼此电连接。电极包括第一层和第二层。此外，电极的端部被具有开口部分的隔离层覆盖。此外，第二层被分隔层的开口部分暴露。

7. 发明授权

US08632166B2 Printing device and method of manufacturing a light emitting device 有权
标题翻译：印刷装置及其制造方法
公开(公告)号：US08632166B2
公开(公告)日：2014-01-21
申请号：US12710793
申请日：2010-02-23
申请人： Shunpei Yamazaki , Satoshi Seo
发明人： Shunpei Yamazaki , Satoshi Seo
IPC分类号： B41J2/045
CPC分类号： H01L27/1214 , B05B17/0607 , B05C5/0275 , B05C11/06 , B05C11/1047 , B41J2/005 , B41J2202/11 , B41M3/003 , H01L27/1292 , H01L29/78645 , H01L29/78648 , H01L51/0004 , H01L51/0005 , H01L51/0034 , H01L51/0035 , H01L51/0036 , H01L51/0037 , H01L51/0038 , H01L51/56
摘要： A first pressure generating chamber, which is sealed by a first elastic plate mounted with a first piezoelectric element at one surface, and a second pressure generating chamber, which is sealed by a second elastic plate mounted with a second piezoelectric element at one surface are formed in a casing. The second pressure generating chamber is formed with an opening which is a discharge port. A mixture is discharged from the discharge port. A nozzle formed with an opening jets gas toward a substrate surface, and is provided in the vicinity of the discharge port of the ink head.
摘要翻译：第一压力发生室由一个表面安装有第一压电元件的第一弹性板和第一压力发生室密封，第一压力发生室由在一个表面上安装有第二压电元件的第二弹性板密封在套管中。第二压力发生室形成有作为排出口的开口。混合物从排出口排出。形成有开口的喷嘴朝向基板表面喷射气体，并且设置在墨头的排出口附近。

8. 发明授权

US08536569B2 Light emitting element and light emitting device using the element 有权
标题翻译：发光元件和使用该元件的发光装置
公开(公告)号：US08536569B2
公开(公告)日：2013-09-17
申请号：US13316079
申请日：2011-12-09
申请人： Shunpei Yamazaki , Satoshi Seo
发明人： Shunpei Yamazaki , Satoshi Seo
IPC分类号： H01L51/00
CPC分类号： H01L27/3209 , H01L27/322 , H01L51/5036
摘要： A first light emitting element 310 and a second light emitting element 320 are serially laminated over a substrate 300. The first light emitting element 310 has a light emitting layer 312 between a first anode 311 and a first cathode 313, and the second light emitting element 320 has a light emitting layer 322 between a second anode 321 and a second cathode 323. Here, the light emitting layer 312 shows a first emission spectrum 330 having peaks both in a blue to blue green wavelength range and in a yellow to orange wavelength range, and the light emitting layer 322 shows a second emission spectrum 340 having peaks both in a blue green to green wavelength range and in an orange to red wavelength range.
摘要翻译：第一发光元件310和第二发光元件320串联地层叠在衬底300上。第一发光元件310在第一阳极311和第一阴极313之间具有发光层312，并且第二发光元件 320具有在第二阳极321和第二阴极323之间的发光层32.这里，发光层312示出了具有蓝色至蓝绿色波长范围和黄色至橙色波长范围内的峰值的第一发射光谱330 ，并且发光层322示出了具有蓝色绿色至绿色波长范围和橙色至红色波长范围内的峰值的第二发射光谱340。

9. 发明授权

US08519615B2 Low drive voltage light emitting element 有权
标题翻译：低驱动电压发光元件
公开(公告)号：US08519615B2
公开(公告)日：2013-08-27
申请号：US13543173
申请日：2012-07-06
申请人： Satoshi Seo , Shunpei Yamazaki
发明人： Satoshi Seo , Shunpei Yamazaki
IPC分类号： H01L51/50 , H01L51/52 , H01L51/54
CPC分类号： H01L51/5012 , H01L27/3244 , H01L51/0059 , Y10S428/917
摘要： An object of the present invention is to provide a material which does not substantially have a hole injection barrier from an electrode. A composite material containing an organic compound and an inorganic compound, in which measured current-voltage characteristics of a thin-film layer formed from the composite material which is sandwiched between a pair of electrodes each having a work function of 3.5 eV to 5.5 eV follow Formula (1) below, is manufactured. J = { A ⁢ ⁢ exp ⁡ ( - ϕ a 2 ⁢ ⁢ kT ) } ⁢ V + BV n ( 1 )
摘要翻译：本发明的目的是提供一种基本上不具有来自电极的空穴注入阻挡层的材料。含有有机化合物和无机化合物的复合材料，其中测量由复合材料形成的薄膜层的电流 - 电压特性，其夹在一对电极之间，每个电极的功函数为3.5eV至5.5eV，其功函数为3.5eV至5.5eV 制造下面的式（1）。 J = {A⁢exp⁡（ - ＆phis; a 2ükT）} V + BV n（1）

10. 发明授权

US08344363B2 Semiconductor device and method of manufacturing same 有权
公开(公告)号：US08344363B2
公开(公告)日：2013-01-01
申请号：US12750325
申请日：2010-03-30
申请人： Shunpei Yamazaki , Satoshi Seo , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Satoshi Seo , Hideaki Kuwabara
IPC分类号： H01L35/24
CPC分类号： H01L51/5209 , G01J1/4228 , H01L25/167 , H01L27/3206 , H01L27/3211 , H01L27/322 , H01L27/3244 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L27/3276 , H01L33/0041 , H01L51/0096 , H01L51/5206 , H01L51/5218 , H01L51/5221 , H01L51/5234 , H01L51/524 , H01L51/5271 , H01L51/529 , H01L51/56 , H01L2227/323 , H01L2251/5315
摘要： A FET is formed on a semiconductor substrate, a curved surface having a radius of curvature is formed on an upper end of an insulation, a portion of a first electrode is exposed corresponding to the curved surface to form an inclined surface, and a region defining a luminescent region is subjected to etching to expose the first electrode. Luminescence emitted from an organic chemical compound layer is reflected by the inclined surface of the first electrode to increase a total quantity of luminescence taken out in a certain direction.

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