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1. 发明授权

US07205182B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07205182B2
公开(公告)日：2007-04-17
申请号：US10968093
申请日：2004-10-20
申请人： Shunpei Yamazaki , Satoshi Murakami , Hideto Ohnuma , Osamu Nakamura , Koichiro Tanaka , Yasuyuki Arai
发明人： Shunpei Yamazaki , Satoshi Murakami , Hideto Ohnuma , Osamu Nakamura , Koichiro Tanaka , Yasuyuki Arai
IPC分类号： H01L21/00
CPC分类号： H01L21/268 , H01L21/3226 , H01L21/67103 , H01L21/67115 , H01L27/12 , H01L27/1285 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78633 , H01L2029/7863
摘要： The present invention is characterized in that gettering is performed such that impurity regions to which a noble gas element is added are formed in a semiconductor film and the metallic element included in the semiconductor film is segregated into the impurity regions by laser annealing. Also, a reflector is provided under a substrate on which a semiconductor film is formed. When laser light transmitted through the semiconductor film substrate is irradiated from the front side of the substrate, the laser beam is reflected by the reflector and thus the laser light can be irradiated to the semiconductor film from the read side thereof. Laser light can be also irradiated to low concentration impurity regions overlapped with a portion the gate electrode. Thus, an effective energy density in the semiconductor film is increased to thereby effect recovery of crystallinity and activation of the impurity element.
摘要翻译：本发明的特征在于，在半导体膜中形成添加有惰性气体元素的杂质区域的吸气，通过激光退火将包含在半导体膜中的金属元素分离成杂质区域。另外，在形成有半导体膜的基板的下方设置有反射体。当透过半导体薄膜基板的激光从基板的正面照射时，激光束被反射体反射，因此激光可以从其读出侧照射到半导体薄膜上。激光也可以照射到与栅电极的一部分重叠的低浓度杂质区域。因此，半导体膜中的有效能量密度增加，从而实现结晶性的恢复和杂质元素的活化。

2. 发明申请

US20050074987A1 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20050074987A1
公开(公告)日：2005-04-07
申请号：US10968093
申请日：2004-10-20
申请人： Shunpei Yamazaki , Satoshi Murakami , Hideto Ohnuma , Osamu Nakamura , Koichiro Tanaka , Yasuyuki Arai
发明人： Shunpei Yamazaki , Satoshi Murakami , Hideto Ohnuma , Osamu Nakamura , Koichiro Tanaka , Yasuyuki Arai
IPC分类号： H01L21/00 , H01L21/268 , H01L21/322 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L29/00
CPC分类号： H01L21/268 , H01L21/3226 , H01L21/67103 , H01L21/67115 , H01L27/12 , H01L27/1285 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78633 , H01L2029/7863
摘要： The present invention is characterized in that gettering is performed such that impurity regions to which a noble gas element is added are formed in a semiconductor film and the metallic element included in the semiconductor film is segregated into the impurity regions by laser annealing. Also, a reflector is provided under a substrate on which a semiconductor film is formed. When laser light transmitted through the semiconductor film substrate is irradiated from the front side of the substrate, the laser beam is reflected by the reflector and thus the laser light can be irradiated to the semiconductor film from the read side thereof. Laser light can be also irradiated to low concentration impurity regions overlapped with a portion the gate electrode. Thus, an effective energy density in the semiconductor film is increased to thereby effect recovery of crystallinity and activation of the impurity element.
摘要翻译：本发明的特征在于，在半导体膜中形成添加有惰性气体元素的杂质区域的吸气，通过激光退火将包含在半导体膜中的金属元素分离成杂质区域。另外，在形成有半导体膜的基板的下方设置有反射体。当透过半导体薄膜基板的激光从基板的正面照射时，激光束被反射体反射，因此激光可以从其读出侧照射到半导体薄膜上。激光也可以照射到与栅电极的一部分重叠的低浓度杂质区域。因此，半导体膜中的有效能量密度增加，从而实现结晶性的恢复和杂质元素的活化。

3. 发明授权

US06809012B2 Method of making a thin film transistor using laser annealing 失效
标题翻译：使用激光退火制造薄膜晶体管的方法
公开(公告)号：US06809012B2
公开(公告)日：2004-10-26
申请号：US10034498
申请日：2002-01-03
申请人： Shunpei Yamazaki , Satoshi Murakami , Hideto Ohnuma , Osamu Nakamura , Koichiro Tanaka , Yasuyuki Arai
发明人： Shunpei Yamazaki , Satoshi Murakami , Hideto Ohnuma , Osamu Nakamura , Koichiro Tanaka , Yasuyuki Arai
IPC分类号： H01L2947
CPC分类号： H01L21/268 , H01L21/3226 , H01L21/67103 , H01L21/67115 , H01L27/12 , H01L27/1285 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78633 , H01L2029/7863
摘要： The present invention is characterized in that gettering is performed such that impurity regions to which a noble gas element is added are formed in a semiconductor film and the metallic element included in the semiconductor film is segregated into the impurity regions by laser annealing. Also, a reflector is provided under a substrate on which a semiconductor film is formed. When laser light transmitted through the semiconductor film substrate is irradiated from the front side of the substrate, the laser beam is reflected by the reflector and thus the laser light can be irradiated to the semiconductor film from the read side thereof. Laser light can be also irradiated to low concentration impurity regions overlapped with a portion the gate electrode. Thus, an effective energy density in the semiconductor film is increased to thereby effect recovery of crystallinity and activation of the impurity element.
摘要翻译：本发明的特征在于，在半导体膜中形成添加有惰性气体元素的杂质区域的吸气，通过激光退火将包含在半导体膜中的金属元素分离成杂质区域。另外，在形成有半导体膜的基板的下方设置有反射体。当透过半导体薄膜基板的激光从基板的正面照射时，激光束被反射体反射，因此激光可以从其读出侧照射到半导体薄膜上。激光也可以照射到与栅电极的一部分重叠的低浓度杂质区域。因此，半导体膜中的有效能量密度增加，从而实现结晶性的恢复和杂质元素的活化。

4. 发明授权

US07943287B2 Method for manufacturing display device 有权
标题翻译：显示装置制造方法
公开(公告)号：US07943287B2
公开(公告)日：2011-05-17
申请号：US11881232
申请日：2007-07-26
申请人： Shunpei Yamazaki , Koichiro Tanaka , Hironobu Shoji , Yasuyuki Arai
发明人： Shunpei Yamazaki , Koichiro Tanaka , Hironobu Shoji , Yasuyuki Arai
IPC分类号： G03F7/00
CPC分类号： H01L27/124 , H01L27/1288 , Y10S430/146
摘要： An object is to provide a display device that can be manufactured with increased use efficiency of a material by a simplified manufacturing process and a manufacturing technique thereof. A light-absorbing layer is formed, an insulating layer is formed over the light-absorbing layer, the light-absorbing layer and the insulating layer are selectively irradiated with laser light, so that an irradiated region of the light-absorbing layer and an irradiated region of the insulating layer are removed, and accordingly an opening is formed in the light-absorbing layer and the insulating layer, and a conductive film is formed in the opening so as to be in contact with the light-absorbing film. The conductive film is formed in the opening so as to be in contact with the exposed light-absorbing layer, so that the light-absorbing layer and the conductive film are electrically connected to each other with the insulating layer interposed therebetween.
摘要翻译：本发明的目的是提供一种能够通过简化的制造工艺及其制造技术以更高的材料利用效率制造的显示装置。形成光吸收层，在光吸收层上形成绝缘层，用激光选择性地照射光吸收层和绝缘层，使得光吸收层的照射区域和被照射的去除绝缘层的区域，因此在光吸收层和绝缘层中形成开口，并且在开口中形成导电膜以与光吸收膜接触。导电膜形成在开口中以与曝光的光吸收层接触，使得光吸收层和导电膜彼此之间以绝缘层彼此电连接。

5. 发明申请

US20080182207A1 Method for manufacturing display device 有权
标题翻译：显示装置制造方法
公开(公告)号：US20080182207A1
公开(公告)日：2008-07-31
申请号：US11881232
申请日：2007-07-26
申请人： Shunpei Yamazaki , Koichiro Tanaka , Hironobu Shoji , Yasuyuki Arai
发明人： Shunpei Yamazaki , Koichiro Tanaka , Hironobu Shoji , Yasuyuki Arai
IPC分类号： G03F7/00
CPC分类号： H01L27/124 , H01L27/1288 , Y10S430/146
摘要： An object is to provide a display device that can be manufactured with increased use efficiency of a material by a simplified manufacturing process and a manufacturing technique thereof. A light-absorbing layer is formed, an insulating layer is formed over the light-absorbing layer, the light-absorbing layer and the insulating layer are selectively irradiated with laser light, so that an irradiated region of the light-absorbing layer and an irradiated region of the insulating layer are removed, and accordingly an opening is formed in the light-absorbing layer and the insulating layer, and a conductive film is formed in the opening so as to be in contact with the light-absorbing film. The conductive film is formed in the opening so as to be in contact with the exposed light-absorbing layer, so that the light-absorbing layer and the conductive film are electrically connected to each other with the insulating layer interposed therebetween.
摘要翻译：本发明的目的是提供一种能够通过简化的制造工艺及其制造技术以更高的材料利用效率制造的显示装置。形成光吸收层，在光吸收层上形成绝缘层，用激光选择性地照射光吸收层和绝缘层，使得光吸收层的照射区域和被照射的去除绝缘层的区域，因此在光吸收层和绝缘层中形成开口，并且在开口中形成导电膜以与光吸收膜接触。导电膜形成在开口中以与曝光的光吸收层接触，使得光吸收层和导电膜彼此之间以绝缘层彼此电连接。

6. 发明授权

US07723725B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07723725B2
公开(公告)日：2010-05-25
申请号：US11649315
申请日：2007-01-03
申请人： Shunpei Yamazaki , Satoshi Murakami , Yasuyuki Arai
发明人： Shunpei Yamazaki , Satoshi Murakami , Yasuyuki Arai
IPC分类号： H01L31/00
CPC分类号： H01L27/1248 , G02F1/13454 , G02F1/136209 , G02F1/136213 , H01L27/1203 , H01L27/1255 , H01L27/1462 , H01L27/14623 , H01L27/1463 , H01L27/14643 , H01L27/3262 , H01L27/3265 , H01L27/3272 , H01L29/66772 , H01L29/78633
摘要： There is provided an active matrix type display device in which the display device is formed of a driver circuit with an insulated gate FET capable of operating at high speed, and even if an area of a pixel electrode per unit pixel is made small, sufficient storage capacitance can be obtained. In a semiconductor device comprising an active matrix circuit with an insulated gate field effect transistor having at least an active layer made of single crystalline semiconductor, an organic resin insulating layer is formed over the insulated gate field effect transistor, a storage capacitance is formed of a light shielding layer formed over the organic resin insulating layer, a dielectric layer formed to be in close contact with the light shielding layer, and a light reflecting electrode connected to the insulated gate field effect transistor.
摘要翻译：提供了一种有源矩阵型显示装置，其中显示装置由具有能够高速运行的绝缘栅极FET的驱动电路形成，并且即使每单位像素的像素电极的面积变小，足够的存储可以获得电容。在包括具有绝缘栅场效应晶体管的有源矩阵电路的半导体器件中，至少具有由单晶半导体制成的有源层，绝缘栅场效应晶体管上形成有机树脂绝缘层，存储电容由形成在有机树脂绝缘层上的遮光层，形成为与遮光层紧密接触的电介质层，以及连接到绝缘栅场效应晶体管的光反射电极。

7. 发明申请

US20070164290A1 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070164290A1
公开(公告)日：2007-07-19
申请号：US11649315
申请日：2007-01-03
申请人： Shunpei Yamazaki , Satoshi Murakami , Yasuyuki Arai
发明人： Shunpei Yamazaki , Satoshi Murakami , Yasuyuki Arai
IPC分类号： H01L29/04
CPC分类号： H01L27/1248 , G02F1/13454 , G02F1/136209 , G02F1/136213 , H01L27/1203 , H01L27/1255 , H01L27/1462 , H01L27/14623 , H01L27/1463 , H01L27/14643 , H01L27/3262 , H01L27/3265 , H01L27/3272 , H01L29/66772 , H01L29/78633
摘要： There is provided an active matrix type display device in which the display device is formed of a driver circuit with an insulated gate FET capable of operating at high speed, and even if an area of a pixel electrode per unit pixel is made small, sufficient storage capacitance can be obtained. In a semiconductor device comprising an active matrix circuit with an insulated gate field effect transistor having at least an active layer made of single crystalline semiconductor, an organic resin insulating layer is formed over the insulated gate field effect transistor, a storage capacitance is formed of a light shielding layer formed over the organic resin insulating layer, a dielectric layer formed to be in close contact with the light shielding layer, and a light reflecting electrode connected to the insulated gate field effect transistor.
摘要翻译：提供了一种有源矩阵型显示装置，其中显示装置由具有能够高速运行的绝缘栅极FET的驱动电路形成，并且即使每单位像素的像素电极的面积变小，足够的存储可以获得电容。在包括具有绝缘栅场效应晶体管的有源矩阵电路的半导体器件中，至少具有由单晶半导体制成的有源层，绝缘栅场效应晶体管上形成有机树脂绝缘层，存储电容由形成在有机树脂绝缘层上的遮光层，形成为与遮光层紧密接触的电介质层，以及连接到绝缘栅场效应晶体管的光反射电极。

8. 发明授权

US06677613B1 Semiconductor device and method of fabricating the same 有权
公开(公告)号：US06677613B1
公开(公告)日：2004-01-13
申请号：US09517542
申请日：2000-03-02
申请人： Shunpei Yamazaki , Satoshi Murakami , Yasuyuki Arai
发明人： Shunpei Yamazaki , Satoshi Murakami , Yasuyuki Arai
IPC分类号： H01L31036
CPC分类号： H01L27/1248 , G02F1/13454 , G02F1/136209 , G02F1/136213 , H01L27/1203 , H01L27/1255 , H01L27/1462 , H01L27/14623 , H01L27/1463 , H01L27/14643 , H01L27/3262 , H01L27/3265 , H01L27/3272 , H01L29/66772 , H01L29/78633
摘要： There is provided an active matrix type display device in which the display device is formed of a driver circuit with an insulated gate FET capable of operating at high speed, and even if an area of a pixel electrode per unit pixel is made small, sufficient storage capacitance can be obtained. In a semiconductor device comprising an active matrix circuit with an insulated gate field effect transistor having at least an active layer made of single crystalline semiconductor, an organic resin insulating layer is formed over the insulated gate field effect transistor, a storage capacitance is formed of a light shielding layer formed over the organic resin insulating layer, a dielectric layer formed to be in close contact with the light shielding layer, and a light reflecting electrode connected to the insulated gate field effect transistor.

9. 发明授权

US07161176B2 Electroluminescence display device having a semiconductor substrate 有权
标题翻译：具有半导体衬底的电致发光显示装置
公开(公告)号：US07161176B2
公开(公告)日：2007-01-09
申请号：US10651458
申请日：2003-08-29
申请人： Shunpei Yamazaki , Satoshi Murakami , Yasuyuki Arai
发明人： Shunpei Yamazaki , Satoshi Murakami , Yasuyuki Arai
IPC分类号： H01L29/04
CPC分类号： H01L27/1248 , G02F1/13454 , G02F1/136209 , G02F1/136213 , H01L27/1203 , H01L27/1255 , H01L27/1462 , H01L27/14623 , H01L27/1463 , H01L27/14643 , H01L27/3262 , H01L27/3265 , H01L27/3272 , H01L29/66772 , H01L29/78633
摘要： There is provided an active matrix type display device in which the display device is formed of a driver circuit with an insulated gate FET capable of operating at high speed, and even if an area of a pixel electrode per unit pixel is made small, sufficient storage capacitance can be obtained. In a semiconductor device comprising an active matrix circuit with an insulated gate field effect transistor having at least an active layer made of single crystalline semiconductor, an organic resin insulating layer is formed over the insulated gate field effect transistor, a storage capacitance is formed of a light shielding layer formed over the organic resin insulating layer, a dielectric layer formed to be in close contact with the light shielding layer, and a light reflecting electrode connected to the insulated gate field effect transistor.
摘要翻译：提供了一种有源矩阵型显示装置，其中显示装置由具有能够高速运行的绝缘栅极FET的驱动电路形成，并且即使每单位像素的像素电极的面积变小，足够的存储可以获得电容。在包括具有绝缘栅场效应晶体管的有源矩阵电路的半导体器件中，至少具有由单晶半导体制成的有源层，在绝缘栅场效应晶体管的上方形成有机树脂绝缘层，存储电容由形成在有机树脂绝缘层上的遮光层，形成为与遮光层紧密接触的电介质层，以及连接到绝缘栅场效应晶体管的光反射电极。

10. 发明申请

US20080156195A1 Air shower device, building, and system for reducing hay fever 有权
标题翻译：空气淋浴设备，建筑物和减少花粉热的系统
公开(公告)号：US20080156195A1
公开(公告)日：2008-07-03
申请号：US12000827
申请日：2007-12-18
申请人： Shunpei Yamazaki , Osamu Nakamura , Yasuyuki Arai
发明人： Shunpei Yamazaki , Osamu Nakamura , Yasuyuki Arai
IPC分类号： B01D46/46
CPC分类号： B01D46/442 , B01D46/46 , Y10S55/34
摘要： An air shower device which prevents allergenic substances which cause hay fever from being brought into a living space, in which a person resides or carries out an activity, by an outside body. The air shower device includes a suction unit, which takes in outside air; an air blower unit having an air blower which blows air which has been taken in, at a specific air-flow rate and a filter which cleans by removing dust, including pollen, from air which is blown; and a dust collecting unit which collects dust, including pollen, from exhaust of an air shower room which includes the air blower unit. Further, the air shower device includes an air-flow rate control unit which controls the amount of air blown by an air blower according to an amount of pollen dispersed in the outside air.
摘要翻译：一种空气淋浴装置，其防止造成花粉症的过敏原物质通过外部身体进入人居住或进行活动的生活空间。该空气淋浴装置包括吸入外部空气的抽吸单元; 吹风机单元，其具有鼓风机，其以特定的空气流量吹入已经被吸入的空气;以及过滤器，其通过从吹出的空气中除去包括花粉在内的灰尘而被清洁; 以及从包括鼓风机单元的空气淋浴房的排气中收集包括花粉在内的灰尘的集尘单元。此外，空气淋浴装置包括空气流量控制单元，其根据分散在外部空气中的花粉量控制鼓风机吹送的空气量。

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