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    • 8. 发明授权
    • Display device, manufacturing method thereof, and television set
    • 显示装置及其制造方法以及电视机
    • US07564058B2
    • 2009-07-21
    • US11187988
    • 2005-07-25
    • Shunpei YamazakiHironobu ShojiShinji MaekawaOsamu NakamuraTatsuya HondaGen FujiiYukie SuzukiIkuko Kawamata
    • Shunpei YamazakiHironobu ShojiShinji MaekawaOsamu NakamuraTatsuya HondaGen FujiiYukie SuzukiIkuko Kawamata
    • H01L27/14
    • H01L21/02667G02F1/1368G02F2202/104H01L21/2022H01L21/2026H01L27/124H01L27/1277H01L27/1292H01L27/3246H01L27/3248H01L27/3262H01L27/3276H01L51/56
    • A manufacturing method of a display device having TFTs capable of high-speed operation with few variations of threshold voltage is provided, in which materials are used with high efficiency and a small number of photomasks is required. The display device of the invention comprises a gate electrode layer and a pixel electrode layer formed over an insulating surface, a gate insulating layer formed over the gate electrode layer, a crystalline semiconductor layer formed over the gate insulating layer, a semiconductor layer having one conductivity type formed in contact with the crystalline semiconductor layer, a source electrode layer and a drain electrode layer formed in contact with the semiconductor layer having one conductivity type, an insulating later formed over the source electrode layer, the drain electrode layer, and the pixel electrode layer, a first opening formed in the insulating layer to reach the source electrode layer or the drain electrode layer, a second opening formed in the gate insulating layer and the insulating layer to reach the pixel electrode layer, and a wiring layer formed in the first opening and the second opening to electrically connect the source electrode layer or the drain electrode layer to the pixel electrode layer.
    • 提供了具有能够以极小的阈值电压变化进行高速运行的TFT的显示装置的制造方法,其中以高效率使用材料并且需要少量的光掩模。 本发明的显示装置包括形成在绝缘表面上的栅极电极层和像素电极层,形成在栅极电极层上的栅极绝缘层,形成在栅极绝缘层上的结晶半导体层,具有一个导电性的半导体层 形成为与结晶半导体层接触的类型,源电极层和漏极电极层,形成为与具有一种导电类型的半导体层接触,在源极电极层,漏极电极层和像素电极之后形成绝缘体 在所述绝缘层中形成的第一开口到达所述源极电极层或所述漏极电极层,形成在所述栅极绝缘层和所述绝缘层中的第二开口到达所述像素电极层;以及布线层, 开口和第二开口以电连接源极电极层或漏极电极 呃到像素电极层。