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1. 发明授权

US08969182B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08969182B2
公开(公告)日：2015-03-03
申请号：US13453118
申请日：2012-04-23
申请人： Junichi Koezuka , Naoto Yamade , Yuhei Sato , Yutaka Okazaki , Shunpei Yamazaki
发明人： Junichi Koezuka , Naoto Yamade , Yuhei Sato , Yutaka Okazaki , Shunpei Yamazaki
IPC分类号： H01L21/36 , H01L21/00 , H01L29/04 , H01L29/786 , H01L29/66
CPC分类号： H01L27/1274 , H01L21/02565 , H01L21/02609 , H01L21/02667 , H01L21/383 , H01L21/44 , H01L21/477 , H01L27/1225 , H01L29/66742 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L29/78696
摘要： A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a transistor including an oxide semiconductor film, an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a first crystalline oxide semiconductor film) is formed; oxygen is added to the oxide semiconductor film to amorphize at least part of the oxide semiconductor film, so that an amorphous oxide semiconductor film containing an excess of oxygen is formed; an aluminum oxide film is formed over the amorphous oxide semiconductor film; and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a second crystalline oxide semiconductor film) is formed.
摘要翻译：使用氧化物半导体的半导体器件具有稳定的电特性以提高可靠性。在包括氧化物半导体膜的晶体管的制造工艺中，形成含有基本上垂直于其顶表面的c轴的晶体（也称为第一晶体氧化物半导体膜）的氧化物半导体膜; 氧化物被添加到氧化物半导体膜中以使至少部分氧化物半导体膜非晶化，从而形成含有过量氧的非晶氧化物半导体膜; 在非晶氧化物半导体膜上形成氧化铝膜; 在其上进行热处理以使非晶氧化物半导体膜的至少一部分结晶，使得含有具有基本上垂直于其顶表面的c轴的晶体的氧化物半导体膜（也称为第二结晶氧化物半导体膜）形成了。

2. 发明授权

US08952379B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08952379B2
公开(公告)日：2015-02-10
申请号：US13608044
申请日：2012-09-10
申请人： Shunpei Yamazaki , Atsuo Isobe , Hiromachi Godo , Takehisa Hatano , Sachiaki Tezuka , Suguru Hondo , Naoto Yamade , Junichi Koezuka
发明人： Shunpei Yamazaki , Atsuo Isobe , Hiromachi Godo , Takehisa Hatano , Sachiaki Tezuka , Suguru Hondo , Naoto Yamade , Junichi Koezuka
IPC分类号： H01L29/78 , H01L29/417 , H01L29/786
CPC分类号： H01L29/41733 , H01L29/78618 , H01L29/7869 , H01L29/78693
摘要： Provided is a semiconductor device in which an oxide semiconductor layer is provided; a pair of wiring layers which are provided with the gate electrode layer interposed therebetween are electrically connected to the low-resistance regions; and electrode layers are provided to be in contact with the low-resistance regions, below regions where the wiring layers are formed.
摘要翻译：提供一种半导体器件，其中提供氧化物半导体层; 设置有栅极电极层的一对布线层电连接到低电阻区域; 并且电极层设置成与低电阻区域接触，在形成布线层的区域之下。

3. 发明授权

US08643008B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08643008B2
公开(公告)日：2014-02-04
申请号：US13547119
申请日：2012-07-12
申请人： Shunpei Yamazaki , Naoto Yamade , Junichi Koezuka
发明人： Shunpei Yamazaki , Naoto Yamade , Junichi Koezuka
IPC分类号： H01L29/10 , H01L29/18 , H01L27/148
CPC分类号： H01L27/1225
摘要： A semiconductor device which can operate at high speed and consumes a smaller amount of power is provided. In a semiconductor device including transistors each including an oxide semiconductor, the oxygen concentration of the oxide semiconductor film of the transistor having small current at negative gate voltage is different from that of the oxide semiconductor film of the transistor having high field-effect mobility and large on-state current. Typically, the oxygen concentration of the oxide semiconductor film of the transistor having high field-effect mobility and large on-state current is lower than that of the oxide semiconductor film of the transistor having small current at negative gate voltage.
摘要翻译：提供了可以高速运行并消耗更少功率的半导体器件。在包括各自包含氧化物半导体的晶体管的半导体器件中，在负栅极电压下具有小电流的晶体管的氧化物半导体膜的氧浓度与具有高场效应迁移率的晶体管的氧化物半导体膜的氧浓度不同通态电流。通常，具有高场电迁移率和大导通状态电流的晶体管的氧化物半导体膜的氧浓度低于在负栅极电压下具有小电流的晶体管的氧化物半导体膜的氧浓度。

4. 发明授权

US07980198B2 Doping apparatus, doping method, and method for fabricating thin film transistor 有权
标题翻译：掺杂装置，掺杂方法和制造薄膜晶体管的方法
公开(公告)号：US07980198B2
公开(公告)日：2011-07-19
申请号：US12755609
申请日：2010-04-07
申请人： Junichi Koezuka , Naoto Yamade
发明人： Junichi Koezuka , Naoto Yamade
IPC分类号： C23C16/00
CPC分类号： H01L22/24 , H01L27/12 , H01L27/1285 , H01L27/1292 , Y10S438/914
摘要： It is an object of the present invention to provide a doping apparatus, a doping method, and a method for fabricating a thin film transistor that can carry out doping to the carrier concentration which is optimum for obtaining the desired electric characteristic non-destructively and in an easy manner. In accordance with the present invention, an electric characteristic of a semiconductor element (threshold voltage in a transistor and the like) is correctly and precisely monitored by using a contact angle, and is controlled by controlling a doping method. In addition, the present invention can be momentarily acquired information by in-situ monitoring the characteristic and can be fed back without a time lag.
摘要翻译：本发明的目的是提供一种掺杂装置，掺杂方法和制造薄膜晶体管的方法，所述薄膜晶体管可以对载流子浓度进行掺杂，这对于非破坏性地获得所需的电特性是最佳的一个简单的方式。根据本发明，通过使用接触角正确且精确地监测半导体元件的电特性（晶体管等中的阈值电压），并且通过控制掺杂方法来控制。此外，本发明可以通过原位监测特性而瞬间获取信息，并且可以在没有时间延迟的情况下反馈。

5. 发明申请

US20050032341A1 Doping apparatus, doping method, and method for fabricating thin film transistor 有权
标题翻译：掺杂装置，掺杂方法和制造薄膜晶体管的方法
公开(公告)号：US20050032341A1
公开(公告)日：2005-02-10
申请号：US10910623
申请日：2004-08-04
申请人： Junichi Koezuka , Naoto Yamade
发明人： Junichi Koezuka , Naoto Yamade
IPC分类号： H01L21/66 , H01L21/77 , H01L21/84 , H01L27/12 , H01L21/26
CPC分类号： H01L22/24 , H01L27/12 , H01L27/1285 , H01L27/1292 , Y10S438/914
摘要： It is an object of the present invention to provide a doping apparatus, a doping method, and a method for fabricating a thin film transistor that can carry out doping to the carrier concentration which is optimum for obtaining the desired electric characteristic non-destructively and in an easy manner. In accordance with the present invention, an electric characteristic of a semiconductor element (threshold voltage in a transistor and the like) is correctly and precisely monitored by using a contact angle, and is controlled by controlling a doping method. In addition, the present invention can be momentarily acquired information by in-situ monitoring the characteristic and can be fed back without a time lag.
摘要翻译：本发明的目的是提供一种掺杂装置，掺杂方法和制造薄膜晶体管的方法，所述薄膜晶体管可以对载流子浓度进行掺杂，这对于非破坏性地获得所需的电特性是最佳的一个简单的方式。根据本发明，通过使用接触角正确且精确地监测半导体元件的电特性（晶体管等中的阈值电压），并且通过控制掺杂方法来控制。此外，本发明可以通过原位监测特性而瞬间获取信息，并且可以在没有时间延迟的情况下反馈。

6. 发明授权

US08709922B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US08709922B2
公开(公告)日：2014-04-29
申请号：US13448611
申请日：2012-04-17
申请人： Junichi Koezuka , Naoto Yamade , Kyoko Yoshioka , Yuhei Sato , Mari Terashima
发明人： Junichi Koezuka , Naoto Yamade , Kyoko Yoshioka , Yuhei Sato , Mari Terashima
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L29/66969 , H01L21/02667 , H01L29/78606 , H01L29/78693
摘要： A highly reliable semiconductor device which is formed using an oxide semiconductor and has stable electric characteristics is provided. A semiconductor device which includes an amorphous oxide semiconductor layer including a region containing oxygen in a proportion higher than that in the stoichiometric composition, and an aluminum oxide film provided over the amorphous oxide semiconductor layer is provided. The amorphous oxide semiconductor layer is formed as follows: oxygen implantation treatment is performed on a crystalline or amorphous oxide semiconductor layer which has been subjected to dehydration or dehydrogenation treatment, and then thermal treatment is performed on the oxide semiconductor layer provided with an aluminum oxide film at a temperature lower than or equal to 450° C.
摘要翻译：提供了使用氧化物半导体形成且具有稳定的电特性的高度可靠的半导体器件。提供一种半导体器件，其包括非晶氧化物半导体层，所述非晶氧化物半导体层包括含有比所述化学计量组成中高的比例的氧的区域和设置在所述非晶氧化物半导体层上的氧化铝膜。无定形氧化物半导体层如下形成：对已进行脱水或脱氢处理的结晶或非晶氧化物半导体层进行氧注入处理，然后对设置有氧化铝膜的氧化物半导体层进行热处理在低于或等于450℃的温度下

7. 发明申请

US20070224711A1 Doping apparatus, doping method, and method for fabricating thin film transistor 失效
标题翻译：掺杂装置，掺杂方法和制造薄膜晶体管的方法
公开(公告)号：US20070224711A1
公开(公告)日：2007-09-27
申请号：US11798980
申请日：2007-05-18
申请人： Junichi Koezuka , Naoto Yamade
发明人： Junichi Koezuka , Naoto Yamade
IPC分类号： H01L21/66
CPC分类号： H01L22/24 , H01L27/12 , H01L27/1285 , H01L27/1292 , Y10S438/914
摘要： It is an object of the present invention to provide a doping apparatus, a doping method, and a method for fabricating a thin film transistor that can carry out doping to the carrier concentration which is optimum for obtaining the desired electric characteristic non-destructively and in an easy manner. In accordance with the present invention, an electric characteristic of a semiconductor element (threshold voltage in a transistor and the like) is correctly and precisely monitored by using a contact angle, and is controlled by controlling a doping method. In addition, the present invention can be momentarily acquired information by in-situ monitoring the characteristic and can be fed back without a time lag.
摘要翻译：本发明的目的是提供一种掺杂装置，掺杂方法和制造薄膜晶体管的方法，所述薄膜晶体管可以对载流子浓度进行掺杂，这对于非破坏性地获得所需的电特性是最佳的一个简单的方式。根据本发明，通过使用接触角正确且精确地监测半导体元件的电特性（晶体管等中的阈值电压），并且通过控制掺杂方法来控制。此外，本发明可以通过原位监测特性而瞬间获取信息，并且可以在没有时间延迟的情况下反馈。

8. 发明授权

US07713761B2 Doping apparatus, doping method, and method for fabricating thin film transistor 失效
标题翻译：掺杂装置，掺杂方法和制造薄膜晶体管的方法
公开(公告)号：US07713761B2
公开(公告)日：2010-05-11
申请号：US11798980
申请日：2007-05-18
申请人： Junichi Koezuka , Naoto Yamade
发明人： Junichi Koezuka , Naoto Yamade
IPC分类号： G01R31/26 , H01L21/66
CPC分类号： H01L22/24 , H01L27/12 , H01L27/1285 , H01L27/1292 , Y10S438/914
摘要： It is an object of the present invention to provide a doping apparatus, a doping method, and a method for fabricating a thin film transistor that can carry out doping to the carrier concentration which is optimum for obtaining the desired electric characteristic non-destructively and in an easy manner. In accordance with the present invention, an electric characteristic of a semiconductor element (threshold voltage in a transistor and the like) is correctly and precisely monitored by using a contact angle, and is controlled by controlling a doping method. In addition, the present invention can be momentarily acquired information by in-situ monitoring the characteristic and can be fed back without a time lag.
摘要翻译：本发明的目的是提供一种掺杂装置，掺杂方法和制造薄膜晶体管的方法，所述薄膜晶体管可以对载流子浓度进行掺杂，这对于非破坏性地获得所需的电特性是最佳的一个简单的方式。根据本发明，通过使用接触角正确且精确地监测半导体元件的电特性（晶体管等中的阈值电压），并且通过控制掺杂方法来控制。此外，本发明可以通过原位监测特性而瞬间获取信息，并且可以在没有时间延迟的情况下反馈。

9. 发明授权

US07250312B2 Doping method and method for fabricating thin film transistor 有权
标题翻译：用于制造薄膜晶体管的掺杂方法和方法
公开(公告)号：US07250312B2
公开(公告)日：2007-07-31
申请号：US10910623
申请日：2004-08-04
申请人： Junichi Koezuka , Naoto Yamade
发明人： Junichi Koezuka , Naoto Yamade
IPC分类号： H01L21/66 , G01R31/26
CPC分类号： H01L22/24 , H01L27/12 , H01L27/1285 , H01L27/1292 , Y10S438/914
摘要： It is an object of the present invention to provide a doping apparatus, a doping method, and a method for fabricating a thin film transistor that can carry out doping to the carrier concentration which is optimum for obtaining the desired electric characteristic non-destructively and in an easy manner. In accordance with the present invention, an electric characteristic of a semiconductor element (threshold voltage in a transistor and the like) is correctly and precisely monitored by using a contact angle, and is controlled by controlling a doping method. In addition, the present invention can be momentarily acquired information by in-situ monitoring the characteristic and can be fed back without a time lag.
摘要翻译：本发明的目的是提供一种掺杂装置，掺杂方法和制造薄膜晶体管的方法，所述薄膜晶体管可以对载流子浓度进行掺杂，这对于非破坏性地获得所需的电特性是最佳的一个简单的方式。根据本发明，通过使用接触角正确且精确地监测半导体元件的电特性（晶体管等中的阈值电压），并且通过控制掺杂方法来控制。此外，本发明可以通过原位监测特性而瞬间获取信息，并且可以在没有时间延迟的情况下反馈。

10. 发明授权

US08796681B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08796681B2
公开(公告)日：2014-08-05
申请号：US13602489
申请日：2012-09-04
申请人： Naoto Yamade , Junichi Koezuka
发明人： Naoto Yamade , Junichi Koezuka
IPC分类号： H01L29/10 , H01L29/04 , H01L27/12
CPC分类号： H01L29/78693 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/12 , H01L29/04 , H01L29/10 , H01L29/7869
摘要： A semiconductor device which is miniaturized and has sufficient electrical characteristics to function as a transistor is provided. In a semiconductor device including a transistor in which a semiconductor layer, a gate insulating layer, and a gate electrode layer are stacked in that order, an oxide semiconductor film which contains at least four kinds of elements of indium, gallium, zinc, and oxygen, and in which the percentage of the indium is twice or more as large as each of the percentage of the gallium and the percentage of the zinc when the composition of the four elements is expressed in atomic percentage is used as the semiconductor layer. In the semiconductor device, the oxide semiconductor film is a film to which oxygen is introduced in the manufacturing process and contains a large amount of oxygen, and an insulating layer including an aluminum oxide film is provided to cover the transistor.
摘要翻译：提供小型化并具有足够的电特性用作晶体管的半导体器件。在包括半导体层，栅极绝缘层和栅极电极层的晶体管的半导体器件中，依次包含铟，镓，锌和氧中的至少四种元素的氧化物半导体膜，并且其中当四种元素的组成以原子百分比表示时，铟的百分比是镓的百分比和锌的百分比的两倍或更多，而作为半导体层。在半导体器件中，氧化物半导体膜是在制造过程中引入氧并含有大量氧的膜，并且提供包括氧化铝膜的绝缘层以覆盖晶体管。

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