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1. 发明授权

US08557614B2 Method for manufacturing lighting device 有权
标题翻译：照明装置制造方法
公开(公告)号：US08557614B2
公开(公告)日：2013-10-15
申请号：US13336356
申请日：2011-12-23
申请人： Shunpei Yamazaki , Yasuyuki Arai , Naoto Kusumoto
发明人： Shunpei Yamazaki , Yasuyuki Arai , Naoto Kusumoto
IPC分类号： H01L21/66
CPC分类号： H01L51/56 , H01L27/3204 , H01L51/5268 , H01L51/5275 , H01L2251/5361 , H01L2251/5392 , H01L2251/568
摘要： An object is to provide a method for manufacturing a lighting device, in which a problem of a short circuit between an upper electrode and a lower electrode of a light-emitting element is solved without reducing a light-emitting property of a normal portion of the light-emitting element to the utmost. In a light-emitting element including an upper electrode, an electroluminescent layer, and a lower electrode, a short-circuited portion that is undesirably formed between the upper electrode and the lower electrode is irradiated with a laser beam, whereby a region where the short-circuited portion is removed is formed, and then the region is filled with an insulating resin having a light-transmitting property. Thus, the problem of the short circuit between the upper electrode and the lower electrode is solved and yield of a lighting device is improved.
摘要翻译：本发明的目的是提供一种照明装置的制造方法，其中解决了发光元件的上部电极和下部电极之间的短路问题，而不会降低发光元件的正常部分的发光特性发光元件最大。在包括上电极，电致发光层和下电极的发光元件中，用激光束照射不希望地形成在上电极和下电极之间的短路部分，由此短路的区域形成去除的部分，然后用具有透光性的绝缘树脂填充该区域。因此，解决了上电极和下电极之间短路的问题，并且提高了照明装置的产量。

2. 发明授权

US07816195B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07816195B2
公开(公告)日：2010-10-19
申请号：US12041014
申请日：2008-03-03
申请人： Shunpei Yamazaki , Naoto Kusumoto , Hideto Ohnuma , Koichiro Tanaka
发明人： Shunpei Yamazaki , Naoto Kusumoto , Hideto Ohnuma , Koichiro Tanaka
IPC分类号： H01L21/00
CPC分类号： H01L27/127 , G02F1/13454 , H01L27/1203 , H01L27/1214 , H01L29/4908 , H01L29/66757 , H01L29/78696
摘要： A TFT having a high threshold voltage is connected to the source electrode of each TFT that constitutes a CMOS circuit. In another aspect, pixel thin-film transistors are constructed such that a thin-film transistor more distant from a gate line drive circuit has a lower threshold voltage. In a further aspect, a control film that is removable in a later step is formed on the surface of the channel forming region of a TFT, and doping is performed from above the control film.
摘要翻译：具有高阈值电压的TFT连接到构成CMOS电路的每个TFT的源电极。在另一方面，像素薄膜晶体管被构造成使得离栅极线驱动电路更远的薄膜晶体管具有较低的阈值电压。在另一方面，在TFT的沟道形成区域的表面上形成可在后续步骤中移除的控制膜，并且从控制膜的上方进行掺杂。

3. 发明授权

US07303980B2 Laser annealing method and apparatus 有权
标题翻译：激光退火方法和装置
公开(公告)号：US07303980B2
公开(公告)日：2007-12-04
申请号：US10273755
申请日：2002-10-18
申请人： Shunpei Yamazaki , Naoto Kusumoto , Koichiro Tanaka
发明人： Shunpei Yamazaki , Naoto Kusumoto , Koichiro Tanaka
IPC分类号： H01L21/00
CPC分类号： H01L21/02686 , B23K26/073 , H01L21/2026 , H01L21/268 , H01L27/1285 , H01L27/1296 , H01L29/66757 , H01L29/78675
摘要： A linear pulse laser beam to be applied to an illumination surface is so formed as to have, at the focus, an energy profile in the width direction which satisfies inequalities 0.5L1≦L2≦L1 and 0.5L1≦L3≦L1 where assuming that a maximum energy is 1, L1 is a beam width of two points having an energy of 0.95 and L1+L2+L3 is a beam width of two points having an energy of 0.70, L2 and L3 occupying two peripheral portions of the beam width. According to another aspect of the invention, a compound-eye-like fly-eye lens for expanding a pulse laser beam in a sectional manner is provided upstream of a cylindrical lens for converging the laser beam into a linear beam.
摘要翻译：施加到照明表面的线性脉冲激光束被形成为在焦点处具有宽度方向上的能量分布，其满足不等式0.5L 1 <= L 2 <= L 1和0.5L 1 < L 3 <= L 1其中，假定最大能量为1，L 1是具有0.95的能量的两点的波束宽度，L 1+ L 2+ L 3是具有0.70的能量的两点的波束宽度，L 2和L 3占据梁宽度的两个周边部分。根据本发明的另一方面，在用于将激光束会聚到线性光束的柱面透镜的上游设置用于以分段方式扩展脉冲激光束的复眼型飞眼透镜。

4. 发明授权

US06562672B2 Semiconductor material and method for forming the same and thin film transistor 失效
标题翻译：用于形成相同薄膜晶体管的半导体材料和方法
公开(公告)号：US06562672B2
公开(公告)日：2003-05-13
申请号：US09911615
申请日：2001-07-25
申请人： Shunpei Yamazaki , Hongyong Zhang , Naoto Kusumoto , Yasuhiko Takemura
发明人： Shunpei Yamazaki , Hongyong Zhang , Naoto Kusumoto , Yasuhiko Takemura
IPC分类号： H01L2100
CPC分类号： H01L29/16 , H01L29/78675
摘要： A semiconductor material and a method for forming the same, said semiconductor material having fabricated by a process comprising irradiating a laser beam or a high intensity light equivalent to a laser beam to an amorphous silicon film containing therein carbon, nitrogen, and oxygen each at a concentration of 5×1019 atoms·cm−3 or lower, preferably 1×1019 atoms·cm−3 or lower, without melting the amorphous silicon film. The present invention provides thin film semiconductors having high mobility at an excellent reproducibility, said semiconductor materials being useful for fabricating compact thin film semiconductor devices such as thin film transistors improved in device characteristics.
摘要翻译：一种半导体材料及其形成方法，所述半导体材料通过以下步骤制造，所述方法包括：将激光束等效于激光的激光束或高强度光照射到含有碳，氮和氧的非晶硅膜中，浓度为5×1019原子％-3或更低，优选为1×1019原子％-3或更低，而不熔化非晶硅膜。本发明提供了具有优异的再现性的高迁移率的薄膜半导体，所述半导体材料可用于制造薄膜晶体管等薄膜半导体器件，从而改善器件特性。

5. 发明授权

US06558991B2 Laser irradiation apparatus and laser irradiation method 有权
公开(公告)号：US06558991B2
公开(公告)日：2003-05-06
申请号：US09930758
申请日：2001-08-15
申请人： Shunpei Yamazaki , Koichiro Tanaka , Naoto Kusumoto
发明人： Shunpei Yamazaki , Koichiro Tanaka , Naoto Kusumoto
IPC分类号： H01L2100
CPC分类号： H01L21/02686 , B23K26/0738 , C30B13/24 , H01L21/02532 , H01L21/02678 , H01L21/02691 , H01L21/2026 , H01L29/66757
摘要： Laser annealing is performed by irradiating, while scanning, a semiconductor thin-film with laser light. The laser light that is linear on the irradiation surface is moved in its line-width direction and applied non-continuously. The laser light has, in its line-width direction, an energy density profile that assumes a step-like form in which the energy density varies in a step-like manner. In particular, the scanning pitch D and the step widths Ln are so set as to satisfy a relationship Ln≧D.

6. 发明授权

US06528359B2 Laser annealing method and laser annealing device 有权
公开(公告)号：US06528359B2
公开(公告)日：2003-03-04
申请号：US09796949
申请日：2001-02-27
申请人： Naoto Kusumoto , Shunpei Yamazaki , Koichiro Tanaka
发明人： Naoto Kusumoto , Shunpei Yamazaki , Koichiro Tanaka
IPC分类号： H01L2120
CPC分类号： H01L21/02675 , H01L21/02532 , H01L21/0259 , H01L21/02672 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/268 , H01L21/67115
摘要： In order to promote an effect of laser annealing in respect of a semiconductor film, moisture is intentionally included in an atmosphere in irradiating laser beam to the semiconductor film by which a temperature holding layer comprising water vapor is formed on the surface of the semiconductor film in irradiating the laser beam and the laser annealing operation can be performed effectively.

7. 发明授权

US06373870B1 Laser irradiation apparatus and laser irradiation method 有权
公开(公告)号：US06373870B1
公开(公告)日：2002-04-16
申请号：US09141763
申请日：1998-08-27
申请人： Shunpei Yamazaki , Koichiro Tanaka , Naoto Kusumoto
发明人： Shunpei Yamazaki , Koichiro Tanaka , Naoto Kusumoto
IPC分类号： H01S310
CPC分类号： H01L21/02686 , B23K26/0738 , C30B13/24 , H01L21/02532 , H01L21/02678 , H01L21/02691 , H01L21/2026 , H01L29/66757
摘要： Laser annealing is performed by irradiating, while scanning, a semiconductor thin-film with laser light. The laser light that is linear on the irradiation surface is moved in its line-width direction and applied non-continuously. The laser light has, in its line-width direction, an energy density profile that assumes a step-like form in which the energy density varies in a step-like manner. In particular, the scanning pitch D and the step widths Ln are so set as to satisfy a relationship Ln≧D.

8. 发明授权

US06242291B1 Laser annealing method and laser annealing device 失效
标题翻译：激光退火方法和激光退火装置
公开(公告)号：US06242291B1
公开(公告)日：2001-06-05
申请号：US08987573
申请日：1997-12-11
申请人： Naoto Kusumoto , Shunpei Yamazaki , Koichiro Tanaka
发明人： Naoto Kusumoto , Shunpei Yamazaki , Koichiro Tanaka
IPC分类号： H01L2100
CPC分类号： H01L21/02675 , H01L21/02532 , H01L21/0259 , H01L21/02672 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/268 , H01L21/67115
摘要： In order to promote an effect of laser annealing in respect of a semiconductor film, moisture is intentionally included in an atmosphere in irradiating laser beam to the semiconductor film by which a temperature holding layer comprising water vapor is formed on the surface of the semiconductor film in irradiating the laser beam and the laser annealing operation can be performed effectively.
摘要翻译：为了促进半导体膜的激光退火的效果，在向半导体膜照射激光的气氛中有意地包含水分，在该半导体膜中，在半导体膜的表面上形成有包含水蒸气的温度保持层可以有效地进行激光照射和激光退火操作。

9. 发明授权

US6149984A Laser irradiation method 有权
标题翻译：激光照射法
公开(公告)号：US6149984A
公开(公告)日：2000-11-21
申请号：US304808
申请日：1999-05-03
申请人： Shunpei Yamazaki , Naoto Kusumoto
发明人： Shunpei Yamazaki , Naoto Kusumoto
IPC分类号： C23C16/44 , C30B1/02 , C30B13/24 , C30B31/20 , C23C14/04 , H01L21/31 , H01L21/42
CPC分类号： C30B31/20 , C23C16/4405 , C30B1/023 , C30B13/24 , C30B29/06
摘要： In processing an object by irradiating it with laser light, a laser irradiation chamber is evacuated to a pressure value suitable for the intended laser light processing and the laser light processing is performed with the pressure in the chamber kept constant at the above value. Further, electrodes are provided in the laser irradiation chamber, and the inside of the chamber is cleaned by introducing an etching gas into the chamber during or immediately before the laser light irradiation and rendering the etching gas active.
摘要翻译：在通过用激光照射物体来处理物体时，将激光照射室抽真空到适合于预期的激光处理的压力值，并且在室内的压力保持恒定在上述值的情况下进行激光处理。此外，在激光照射室中设置电极，并且通过在激光照射期间或紧接其后的激光照射期间将蚀刻气体引入室内，并使蚀刻气体活性化，从而对室内进行清洗。

10. 发明授权

US5937282A Method for producing semiconductor device 失效
公开(公告)号：US5937282A
公开(公告)日：1999-08-10
申请号：US893550
申请日：1997-07-11
申请人： Setsuo Nakajima , Shunpei Yamazaki , Naoto Kusumoto , Satoshi Teramoto
发明人： Setsuo Nakajima , Shunpei Yamazaki , Naoto Kusumoto , Satoshi Teramoto
IPC分类号： H01L29/786 , H01L21/20 , H01L21/336 , H01L21/423 , H01L21/00
CPC分类号： H01L21/2026 , H01L21/423 , H01L27/1277 , H01L27/1281 , H01L29/66757 , Y10S148/016 , Y10S148/093
摘要： In producing a thin film transistor, after an amorphous silicon film is formed on a substrate, a nickel silicide layer is formed by spin coating with a solution (nickel acetate solution) containing nickel as the metal element which accelerates (promotes) the crystallization of silicon and by heat treating. The nickel silicide layer is selectively patterned to form island-like nickel silicide layer. The amorphous silicon film is patterned. A laser light is irradiated while moving the laser, so that crystal growth occurs from the region in which the nickel silicide layer is formed and a region equivalent to a single crystal (a monodomain region) is obtained.

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