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1. 发明申请

US20070254432A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070254432A1
公开(公告)日：2007-11-01
申请号：US11790348
申请日：2007-04-25
申请人： Shunpei Yamazaki , Kiyoshi Kato , Ryoji Nomura
发明人： Shunpei Yamazaki , Kiyoshi Kato , Ryoji Nomura
IPC分类号： H01L29/08 , H01L51/40 , H01L21/8242
CPC分类号： H01L27/12 , B82Y10/00 , G11C13/0014 , G11C13/004 , G11C2013/0054 , H01L27/1248 , H01L27/13 , H01L27/285
摘要： In the present invention, a semiconductor device that has a nonvolatile memory element to which data can be written at times other than during manufacture and in which forgery and the like performed by rewriting of data can be prevented is provided. In addition, a semiconductor device in which a high level of integration is possible is provided. Furthermore, a semiconductor device in which miniaturization is possible is provided. In a semiconductor device having a memory element that includes a first conductive layer, a second conductive layer, and an organic compound layer interposed between the first conductive layer and the second conductive layer; the second conductive layer is connected to a wiring, formed in the same way as the first conductive layer is formed, through an opening formed in the organic compound layer.
摘要翻译：在本发明中，提供了一种具有非易失性存储元件的半导体器件，可以防止在制造过程中可以写入数据的非易失性存储元件，并且可以防止通过重写数据进行伪造等。此外，提供了其中可以实现高集成度的半导体器件。此外，提供了可以进行小型化的半导体器件。在具有包含第一导电层，第二导电层和介于第一导电层和第二导电层之间的有机化合物层的存储元件的半导体器件中; 第二导电层通过形成在有机化合物层中的开口连接到与形成第一导电层的方式相同的布线。

2. 发明授权

US07923719B2 Semiconductor memory device wherein wiring contact is made through an opening in an organic compound layer 有权
标题翻译：半导体存储器件，其中通过有机化合物层中的开口制造布线接触
公开(公告)号：US07923719B2
公开(公告)日：2011-04-12
申请号：US11790348
申请日：2007-04-25
申请人： Shunpei Yamazaki , Kiyoshi Kato , Ryoji Nomura
发明人： Shunpei Yamazaki , Kiyoshi Kato , Ryoji Nomura
IPC分类号： H01L29/08 , H01L51/40 , H01L21/8242
CPC分类号： H01L27/12 , B82Y10/00 , G11C13/0014 , G11C13/004 , G11C2013/0054 , H01L27/1248 , H01L27/13 , H01L27/285
摘要： In the present invention, a semiconductor device that has a nonvolatile memory element to which data can be written at times other than during manufacture and in which forgery and the like performed by rewriting of data can be prevented is provided. In addition, a semiconductor device in which a high level of integration is possible is provided. Furthermore, a semiconductor device in which miniaturization is possible is provided. In a semiconductor device having a memory element that includes a first conductive layer, a second conductive layer, and an organic compound layer interposed between the first conductive layer and the second conductive layer; the second conductive layer is connected to a wiring, formed in the same way as the first conductive layer is formed, through an opening formed in the organic compound layer.
摘要翻译：在本发明中，提供了一种具有非易失性存储元件的半导体器件，可以防止在制造过程中可以写入数据的非易失性存储元件，并且可以防止通过重写数据进行伪造等。此外，提供了其中可以实现高集成度的半导体器件。此外，提供了可以进行小型化的半导体器件。在具有包含第一导电层，第二导电层和介于第一导电层和第二导电层之间的有机化合物层的存储元件的半导体器件中; 第二导电层通过形成在有机化合物层中的开口连接到与形成第一导电层的方式相同的布线。

3. 发明授权

US08238152B2 Memory device and manufacturing method the same 有权
标题翻译：存储器件和制造方法相同
公开(公告)号：US08238152B2
公开(公告)日：2012-08-07
申请号：US12711333
申请日：2010-02-24
申请人： Yoshinobu Asami , Tamae Takano , Masayuki Sakakura , Ryoji Nomura , Shunpei Yamazaki
发明人： Yoshinobu Asami , Tamae Takano , Masayuki Sakakura , Ryoji Nomura , Shunpei Yamazaki
IPC分类号： G11C11/34 , G11C11/00 , H01L51/00
CPC分类号： H01L27/1082 , B82Y10/00 , G11C11/34 , G11C13/0014 , G11C2213/79 , H01L23/4828 , H01L27/105 , H01L27/1203 , H01L27/1244 , H01L27/28 , H01L29/458 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.
摘要翻译：可以在没有接触的情况下发送和接收数据的半导体器件部分地受到一些铁路通行证，电子货币卡等的普及; 然而，提供便宜的半导体器件以进一步普及是主要的任务。鉴于上述现有条件，本发明的半导体器件包括具有用于提供便宜的半导体器件的简单结构的存储器及其制造方法。包括在存储器中的存储元件包括含有有机化合物的层，并且将设置在存储元件部分中的TFT的源电极或漏电极用作形成存储元件的位线的导电层。

4. 发明授权

US08018152B2 Light-emitting element including intermediate conductive layer having a hole-injection layer with an island-like structure 有权
标题翻译：发光元件包括具有岛状结构的空穴注入层的中间导电层
公开(公告)号：US08018152B2
公开(公告)日：2011-09-13
申请号：US11587843
申请日：2005-05-17
申请人： Shunpei Yamazaki , Ryoji Nomura , Satoshi Seo , Hiroko Abe , Yasuo Nakamura
发明人： Shunpei Yamazaki , Ryoji Nomura , Satoshi Seo , Hiroko Abe , Yasuo Nakamura
IPC分类号： H05B33/22 , H05B33/26
CPC分类号： H01L33/42 , H01L27/3209 , H01L51/5088 , H01L51/5092 , H01L51/5278 , H01L2924/0002 , H01L2924/00
摘要： When a light-emitting element having an intermediate conductive layer between a plurality of light-emitting layers is formed, the intermediate conductive layer can have transparency; and thus, materials are largely limited and the manufacturing process of an element becomes complicated by a conventional method. A light-emitting element according to the present invention is formed by sequentially stacking a pixel electrode, a first light-emitting layer, an intermediate conductive layer (including an electron injecting layer and a hole-injecting layer, one of which is island-like), a second light-emitting layer and an opposite electrode. Therefore, the present invention can provide a light-emitting element typified by an organic EL element in which a range of choice of materials that can be used as the intermediate conductive layer is broadened extremely, and which can realize a high light-emitting efficiency, a low power consumption and a high reliability, and further a display device using the light-emitting element.
摘要翻译：当形成具有在多个发光层之间的中间导电层的发光元件时，中间导电层可以具有透明性; 因此材料受到很大限制，并且通过常规方法使元件的制造过程变得复杂。根据本发明的发光元件通过顺序堆叠像素电极，第一发光层，中间导电层（包括电子注入层和空穴注入层，其中之一是岛状的），第二发光层和相对电极。因此，本发明可以提供一种以有机EL元件为代表的发光元件，其中可以用作中间导电层的材料的选择范围极大，可以实现高的发光效率，低功耗和高可靠性，以及使用该发光元件的显示装置。

5. 发明申请

US20080093462A1 Semiconductor Device and Manufacturing Method Thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080093462A1
公开(公告)日：2008-04-24
申请号：US11587531
申请日：2005-11-28
申请人： Hiroko Abe , Mikio Yukawa , Ryoji Nomura , Satoshi Seo , Shunpei Yamazaki
发明人： Hiroko Abe , Mikio Yukawa , Ryoji Nomura , Satoshi Seo , Shunpei Yamazaki
IPC分类号： G06K19/06
CPC分类号： H01L27/10 , B82Y10/00 , G11C13/0004 , G11C13/0007 , G11C13/0014 , G11C17/16 , G11C2213/32 , G11C2213/77 , G11C2213/79 , H01L27/12 , H01L27/28 , H01L27/283 , H01L29/78645 , H01L51/0059
摘要： It is an object of the present invention to provide a semiconductor device having a memory circuit which is nonvolatile and able to be written additionally, an antenna which can be easily manufactured, and to provide a manufacturing method thereof. In addition, it is an object of the present invention to prevent unauthorized rewriting of information of a wireless chip and forgery of a wireless chip itself and to ensure a security of a wireless chip. In view of the foregoing, the present invention provides an IC tag in which information thereof is identified by wireless communication signal and also information of a memory in an IC tag (a memory which can not be rewritten) is identified by an optical reading device. A memory in an IC tag according to the present invention has an identification surface with which information can be identified by an optical reading device.
摘要翻译：本发明的目的是提供一种具有非易失性且能够被写入的存储电路的半导体器件，可容易地制造的天线，并提供其制造方法。此外，本发明的目的是防止无线芯片的信息的未经授权的重写和无线芯片本身的伪造并且确保无线芯片的安全性。鉴于上述情况，本发明提供了一种IC标签，其中通过无线通信信号识别信息，并且还通过光学读取装置识别IC标签（不能被重写的存储器）中的存储器的信息。根据本发明的IC标签中的存储器具有可由光学读取装置识别信息的识别表面。

6. 发明申请

US20070013301A1 Light emitting element, light emitting device, and electronic apparatus 有权
标题翻译：发光元件，发光元件及电子设备
公开(公告)号：US20070013301A1
公开(公告)日：2007-01-18
申请号：US11473332
申请日：2006-06-23
申请人： Shunpei Yamazaki , Junichiro Sakata , Ryoji Nomura
发明人： Shunpei Yamazaki , Junichiro Sakata , Ryoji Nomura
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H01L51/52 , H01L51/5048 , Y10S428/917
摘要： It is an object of the present invention to provide a light emitting element with a low driving voltage. In a light emitting element, a first electrode; and a first composite layer, a second composite layer, a light emitting layer, an electron transporting layer, an electron injecting layer, and a second electrode, which are stacked over the first electrode, are included. The first composite layer and the second composite layer each include metal oxide and an organic compound. A concentration of metal oxide in the first composite layer is higher than a concentration of metal oxide in the second composite layer, whereby a light emitting element with a low driving voltage can be obtained. Further, the composite layer is not limited to a two-layer structure. A multi-layer structure can be employed. However, a concentration of metal oxide in the composite layer is gradually higher from the light emitting layer to first electrode side.
摘要翻译：本发明的目的是提供一种具有低驱动电压的发光元件。在发光元件中，第一电极; 并且包括层叠在第一电极上的第一复合层，第二复合层，发光层，电子传输层，电子注入层和第二电极。第一复合层和第二复合层各自包括金属氧化物和有机化合物。第一复合层中的金属氧化物的浓度高于第二复合层中的金属氧化物的浓度，由此可以获得具有低驱动电压的发光元件。此外，复合层不限于两层结构。可以采用多层结构。然而，复合层中的金属氧化物的浓度从发光层逐渐变高到第一电极侧。

7. 发明申请

US20060244373A1 Light emitting device and method for manufacturing thereof 审中-公开
标题翻译：发光元件及其制造方法
公开(公告)号：US20060244373A1
公开(公告)日：2006-11-02
申请号：US11408216
申请日：2006-04-20
申请人： Ryoji Nomura , Kaoru Kato , Satoshi Yoshimoto , Shunpei Yamazaki
发明人： Ryoji Nomura , Kaoru Kato , Satoshi Yoshimoto , Shunpei Yamazaki
IPC分类号： H01L51/52 , H01L51/56 , H05B33/12
CPC分类号： H01L51/5012 , H01L2251/558 , Y10T428/24942 , Y10T428/2495 , Y10T428/24967
摘要： An object of the present invention is to provide a light emitting device including an organic light emitting layer and an organic compound and having high light emitting efficient along with less deterioration in characteristics. In the light emitting device, an anode, a cathode facing the anode, light emitting layers each comprising an organic compound and being provided between the anode and the cathode, and carrier transporting layers each comprising an organic compound, are provided over a substrate. Each of the light emitting layers and each of the carrier transporting layers are alternately stacked. A thickness of each of the carrier transporting layers is thinner than that of each of the light emitting layers. When each of the carrier transporting layers is a hole transporting layer, each of the light emitting layers has an electron transporting property. When each of the carrier transporting layers is an electron transporting layer, each of the light emitting layers has a hole transporting property.
摘要翻译：本发明的目的是提供一种包括有机发光层和有机化合物并且具有高发光效率以及更少的特性劣化的发光器件。在发光装置中，在基板上设置阳极，面向阳极的阴极，各自包含有机化合物并且设置在阳极和阴极之间的发光层以及各自包含有机化合物的载流子传输层。每个发光层和每个载流子传输层交替堆叠。每个载流子传输层的厚度比每个发光层的厚度薄。当每个载流子传输层是空穴传输层时，每个发光层都具有电子传输性质。当每个载流子传输层是电子传输层时，每个发光层具有空穴传输性质。

8. 发明授权

US08994086B2 Memory device made from stacked substrates bonded with a resin containing conductive particles 有权
标题翻译：由与含有导电颗粒的树脂粘合的堆叠衬底制成的存储器件
公开(公告)号：US08994086B2
公开(公告)日：2015-03-31
申请号：US12904313
申请日：2010-10-14
申请人： Shunpei Yamazaki , Hiroko Abe , Yukie Nemoto , Ryoji Nomura , Mikio Yukawa
发明人： Shunpei Yamazaki , Hiroko Abe , Yukie Nemoto , Ryoji Nomura , Mikio Yukawa
IPC分类号： H01L21/3205 , H01L21/822 , B82Y10/00 , G11C13/00 , G11C17/14 , G11C17/16 , G11C17/18 , H01L27/06 , H01L27/24 , H01L45/00 , H01L27/12
CPC分类号： H01L27/2463 , B82Y10/00 , G11C13/00 , G11C13/0004 , G11C13/0014 , G11C13/0016 , G11C13/0069 , G11C17/143 , G11C17/16 , G11C17/18 , G11C2013/009 , G11C2213/77 , G11C2213/79 , H01L21/8221 , H01L23/66 , H01L27/0688 , H01L27/1266 , H01L27/2409 , H01L27/2436 , H01L27/283 , H01L45/06 , H01L45/065 , H01L45/1213 , H01L45/1233 , H01L45/141 , H01L45/143 , H01L45/144 , H01L51/0098 , H01L2223/6677 , H01L2224/48091 , H01L2224/48137 , H01L2224/49107 , H01L2224/73265 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
摘要： The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.
摘要翻译：本发明提供了一种非易失性，易于制造并且可另外写入的半导体器件。本发明的半导体器件包括多个晶体管，用作晶体管的源极布线或漏极布线的导电层，以及与多个晶体管之一重叠的存储元件，以及用作天线。存储元件包括第一导电层，有机化合物层和相变层，以及依次层叠的第二导电层。用作天线的导电层和用作多个晶体管的源极布线或漏极布线的导电层设置在同一层上。

9. 发明申请

US20110037061A1 Light Emitting Device, Electronic Equipment and Apparatus For Manufacturing the Same 有权
标题翻译：发光装置，用于制造其的电子设备和装置
公开(公告)号：US20110037061A1
公开(公告)日：2011-02-17
申请号：US12912818
申请日：2010-10-27
申请人： Shunpei Yamazaki , Hiroko Abe , Masakazu Murakami , Ryoji Nomura
发明人： Shunpei Yamazaki , Hiroko Abe , Masakazu Murakami , Ryoji Nomura
IPC分类号： H01L51/50
CPC分类号： H01L51/5281 , H01L27/3267 , H01L51/5016 , H01L51/5036 , H01L2251/5323
摘要： To provide an aspect of a novel display device using a light emitting element which is composed of a cathode, an EL layer and an anode, and a manufacturing device of the display device. According to the present invention, dual-sided emission display can be performed in one sheet white color light emitting panel 1001 in which, for example, different images can be displayed on a topside screen and backside screen (full color display, monochrome display or area color display). Two polarizing plates 1002, 1003 are formed by shifting the position thereof with an angular deviation of 90 degrees each other so as to prevent outside light from passing through the pane, thereby realizing a black display when not displayed.
摘要翻译：提供使用由阴极，EL层和阳极构成的发光元件的新型显示装置的一个方面以及显示装置的制造装置。根据本发明，可以在一张白色发光面板1001中进行双面发光显示，其中例如可以在顶部屏幕和背面屏幕上显示不同的图像（全色显示，单色显示或区域彩色显示）。两个偏振板1002,1003是通过以90度的角度偏移的位置移动来形成的，以防止外界光通过窗格，从而在不显示时实现黑色显示。

10. 发明授权

US07816721B2 Transmission/reception semiconductor device with memory element and antenna on same side of conductive adhesive 有权
标题翻译：具有存储元件和天线的传输/接收半导体器件在导电粘合剂的同一侧
公开(公告)号：US07816721B2
公开(公告)日：2010-10-19
申请号：US11632049
申请日：2005-11-09
申请人： Shunpei Yamazaki , Hiroko Abe , Yukie Nemoto , Ryoji Nomura , Mikio Yukawa
发明人： Shunpei Yamazaki , Hiroko Abe , Yukie Nemoto , Ryoji Nomura , Mikio Yukawa
IPC分类号： H01L21/3205
CPC分类号： H01L27/2463 , B82Y10/00 , G11C13/00 , G11C13/0004 , G11C13/0014 , G11C13/0016 , G11C13/0069 , G11C17/143 , G11C17/16 , G11C17/18 , G11C2013/009 , G11C2213/77 , G11C2213/79 , H01L21/8221 , H01L23/66 , H01L27/0688 , H01L27/1266 , H01L27/2409 , H01L27/2436 , H01L27/283 , H01L45/06 , H01L45/065 , H01L45/1213 , H01L45/1233 , H01L45/141 , H01L45/143 , H01L45/144 , H01L51/0098 , H01L2223/6677 , H01L2224/48091 , H01L2224/48137 , H01L2224/49107 , H01L2224/73265 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
摘要： The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.
摘要翻译：本发明提供了一种非易失性，易于制造并且可另外写入的半导体器件。本发明的半导体器件包括多个晶体管，用作晶体管的源极布线或漏极布线的导电层，以及与多个晶体管之一重叠的存储元件，以及用作天线。存储元件包括第一导电层，有机化合物层和相变层，以及依次层叠的第二导电层。用作天线的导电层和用作多个晶体管的源极布线或漏极布线的导电层设置在同一层上。

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