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1. 发明授权

US08834989B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08834989B2
公开(公告)日：2014-09-16
申请号：US13295278
申请日：2011-11-14
申请人： Kazuko Ikeda , Shinya Sasagawa , Hideomi Suzawa , Shunpei Yamazaki
发明人： Kazuko Ikeda , Shinya Sasagawa , Hideomi Suzawa , Shunpei Yamazaki
IPC分类号： H01L21/00 , H01L29/786 , H01L27/12 , H01L29/66
CPC分类号： H01L27/12 , H01L29/66757 , H01L29/78675 , Y10T428/24421
摘要： An object is to provide a semiconductor device with improved reliability and for which a defect due to an end portion of a semiconductor layer provided in an island-shape is prevented, and a manufacturing method thereof. A structure includes an island-shaped semiconductor layer provided over a substrate, an insulating layer provided over a top surface and a side surface of the island-shaped semiconductor layer, and a gate electrode provided over the island-shaped semiconductor layer with the insulating layer interposed therebetween. In the insulating layer provided to be in contact with the island-shaped semiconductor layer, a region that is in contact with the side surface of the island-shaped semiconductor layer is made to have a lower dielectric constant than a region over the top surface of the island-shaped semiconductor layer.
摘要翻译：本发明的目的是提供一种可靠性提高的半导体器件及其制造方法，该半导体器件具有提高的岛状半导体层的端部的缺陷。一种结构包括设置在基板上的岛状半导体层，设置在岛状半导体层的顶表面和侧表面上的绝缘层以及设置在岛状半导体层上的绝缘层的栅电极插入其间。在与岛状半导体层接触的绝缘层中，使与岛状半导体层的侧面接触的区域的介电常数比上述表面的区域低岛状半导体层。

2. 发明申请

US20080128703A1 Semiconductor Device and Manufacturing Method Thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080128703A1
公开(公告)日：2008-06-05
申请号：US11949186
申请日：2007-12-03
申请人： Kazuko Ikeda , Shinya Sasagawa , Hideomi Suzawa , Shunpei Yamazaki
发明人： Kazuko Ikeda , Shinya Sasagawa , Hideomi Suzawa , Shunpei Yamazaki
IPC分类号： H01L29/04 , H01L21/336
CPC分类号： H01L27/12 , H01L29/66757 , H01L29/78675 , Y10T428/24421
摘要： An object is to provide a semiconductor device with improved reliability and for which a defect due to an end portion of a semiconductor layer provided in an island-shape is prevented, and a manufacturing method thereof. A structure includes an island-shaped semiconductor layer provided over a substrate, an insulating layer provided over a top surface and a side surface of the island-shaped semiconductor layer, and a gate electrode provided over the island-shaped semiconductor layer with the insulating layer interposed therebetween. In the insulating layer provided to be in contact with the island-shaped semiconductor layer, a region that is in contact with the side surface of the island-shaped semiconductor layer is made to have a lower dielectric constant than a region over the top surface of the island-shaped semiconductor layer.
摘要翻译：本发明的目的是提供一种可靠性提高的半导体器件及其制造方法，该半导体器件具有提高的岛状半导体层的端部的缺陷。一种结构包括设置在基板上的岛状半导体层，设置在岛状半导体层的顶表面和侧表面上的绝缘层以及设置在岛状半导体层上的绝缘层的栅电极插入其间。在与岛状半导体层接触的绝缘层中，使与岛状半导体层的侧面接触的区域的介电常数比上述表面的区域低岛状半导体层。

3. 发明授权

US08067772B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US08067772B2
公开(公告)日：2011-11-29
申请号：US11949186
申请日：2007-12-03
申请人： Kazuko Ikeda , Shinya Sasagawa , Hideomi Suzawa , Shunpei Yamazaki
发明人： Kazuko Ikeda , Shinya Sasagawa , Hideomi Suzawa , Shunpei Yamazaki
IPC分类号： H01L29/04
CPC分类号： H01L27/12 , H01L29/66757 , H01L29/78675 , Y10T428/24421
摘要： An object is to provide a semiconductor device with improved reliability and for which a defect due to an end portion of a semiconductor layer provided in an island-shape is prevented, and a manufacturing method thereof. A structure includes an island-shaped semiconductor layer provided over a substrate, an insulating layer provided over a top surface and a side surface of the island-shaped semiconductor layer, and a gate electrode provided over the island-shaped semiconductor layer with the insulating layer interposed therebetween. In the insulating layer provided to be in contact with the island-shaped semiconductor layer, a region that is in contact with the side surface of the island-shaped semiconductor layer is made to have a lower dielectric constant than a region over the top surface of the island-shaped semiconductor layer.
摘要翻译：本发明的目的是提供一种可靠性提高的半导体器件及其制造方法，该半导体器件具有提高的岛状半导体层的端部的缺陷。一种结构包括设置在基板上的岛状半导体层，设置在岛状半导体层的顶表面和侧表面上的绝缘层以及设置在岛状半导体层上的绝缘层的栅电极插入其间。在与岛状半导体层接触的绝缘层中，使与岛状半导体层的侧面接触的区域的介电常数比上述表面的区域低岛状半导体层。

4. 发明申请

US20080128808A1 Semiconductor Device and Manufacturing Method Thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080128808A1
公开(公告)日：2008-06-05
申请号：US11945739
申请日：2007-11-27
申请人： Shunpei Yamazaki , Kazuko Ikeda , Shinya Sasagawa , Hideomi Suzawa
发明人： Shunpei Yamazaki , Kazuko Ikeda , Shinya Sasagawa , Hideomi Suzawa
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/4908 , H01L21/84 , H01L27/1203 , H01L29/66772 , H01L29/78609
摘要： A semiconductor device manufactured utilizing an SOI substrate, in which defects due to an end portion of an island-shaped silicon layer are prevented and the reliability is improved, and a manufacturing method thereof. The following are included: an SOI substrate in which an insulating layer and an island-shaped silicon layer are stacked in order over a support substrate; a gate insulating layer provided over one surface and a side surface of the island-shaped silicon layer; and a gate electrode which is provided over the island-shaped silicon layer with the gate insulating layer interposed therebetween. The gate insulating layer is formed such that the dielectric constant in the region which is in contact with the side surface of the island-shaped silicon layer is lower than that over the one surface of the island-shaped silicon layer.
摘要翻译：利用SOI衬底制造的半导体器件及其制造方法，其中防止了由岛状硅层的端部引起的缺陷并提高了可靠性。包括以下：SOI基板，其中绝缘层和岛状硅层依次层叠在支撑基板上; 设置在岛状硅层的一个表面和侧面上的栅极绝缘层; 以及栅极电极，其设置在岛状硅层上，栅极绝缘层插入其间。栅极绝缘层形成为与岛状硅层的侧面接触的区域的介电常数低于岛状硅层的一个表面的介电常数。

5. 发明授权

US07968884B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07968884B2
公开(公告)日：2011-06-28
申请号：US11945739
申请日：2007-11-27
申请人： Shunpei Yamazaki , Kazuko Ikeda , Shinya Sasagawa , Hideomi Suzawa
发明人： Shunpei Yamazaki , Kazuko Ikeda , Shinya Sasagawa , Hideomi Suzawa
IPC分类号： H01L29/10 , H01L29/76 , H01L31/036 , H01L31/112
CPC分类号： H01L29/4908 , H01L21/84 , H01L27/1203 , H01L29/66772 , H01L29/78609
摘要： A semiconductor device manufactured utilizing an SOI substrate, in which defects due to an end portion of an island-shaped silicon layer are prevented and the reliability is improved, and a manufacturing method thereof. The following are included: an SOI substrate in which an insulating layer and an island-shaped silicon layer are stacked in order over a support substrate; a gate insulating layer provided over one surface and a side surface of the island-shaped silicon layer; and a gate electrode which is provided over the island-shaped silicon layer with the gate insulating layer interposed therebetween. The gate insulating layer is formed such that the dielectric constant in the region which is in contact with the side surface of the island-shaped silicon layer is lower than that over the one surface of the island-shaped silicon layer.
摘要翻译：利用SOI衬底制造的半导体器件及其制造方法，其中防止了由岛状硅层的端部引起的缺陷并提高了可靠性。包括以下：SOI基板，其中绝缘层和岛状硅层依次层叠在支撑基板上; 设置在岛状硅层的一个表面和侧面上的栅极绝缘层; 以及栅极电极，其设置在岛状硅层上，栅极绝缘层插入其间。栅极绝缘层形成为与岛状硅层的侧面接触的区域的介电常数低于岛状硅层的一个表面的介电常数。

6. 发明申请

US20120058631A1 Semiconductor Device and Manufacturing Method Thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120058631A1
公开(公告)日：2012-03-08
申请号：US13295278
申请日：2011-11-14
申请人： Kazuko Ikeda , Shinya Sasagawa , Hideomi Suzawa , Shunpei Yamazaki
发明人： Kazuko Ikeda , Shinya Sasagawa , Hideomi Suzawa , Shunpei Yamazaki
IPC分类号： H01L21/20 , H01L21/28
CPC分类号： H01L27/12 , H01L29/66757 , H01L29/78675 , Y10T428/24421
摘要： An object is to provide a semiconductor device with improved reliability and for which a defect due to an end portion of a semiconductor layer provided in an island-shape is prevented, and a manufacturing method thereof. A structure includes an island-shaped semiconductor layer provided over a substrate, an insulating layer provided over a top surface and a side surface of the island-shaped semiconductor layer, and a gate electrode provided over the island-shaped semiconductor layer with the insulating layer interposed therebetween. In the insulating layer provided to be in contact with the island-shaped semiconductor layer, a region that is in contact with the side surface of the island-shaped semiconductor layer is made to have a lower dielectric constant than a region over the top surface of the island-shaped semiconductor layer.
摘要翻译：本发明的目的是提供一种可靠性提高的半导体器件及其制造方法，该半导体器件具有提高的岛状半导体层的端部的缺陷。一种结构包括设置在基板上的岛状半导体层，设置在岛状半导体层的顶表面和侧表面上的绝缘层以及设置在岛状半导体层上的绝缘层的栅电极插入其间。在与岛状半导体层接触的绝缘层中，使与岛状半导体层的侧面接触的区域的介电常数比上述表面的区域低岛状半导体层。

7. 发明授权

US08980733B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08980733B2
公开(公告)日：2015-03-17
申请号：US12904181
申请日：2010-10-14
申请人： Shunpei Yamazaki , Yukie Suzuki , Yasuyuki Arai , Yoshitaka Moriya , Kazuko Ikeda , Yoshifumi Tanada , Shuhei Takahashi
发明人： Shunpei Yamazaki , Yukie Suzuki , Yasuyuki Arai , Yoshitaka Moriya , Kazuko Ikeda , Yoshifumi Tanada , Shuhei Takahashi
IPC分类号： H01L21/02 , H01L29/423 , H01L21/28 , H01L27/12 , H01L29/66 , H01L29/786 , H01L29/788 , H01L21/84 , H01L27/13
CPC分类号： H01L29/42368 , H01L21/28273 , H01L21/28282 , H01L21/84 , H01L27/12 , H01L27/1203 , H01L27/1214 , H01L27/1248 , H01L27/1255 , H01L27/13 , H01L29/42384 , H01L29/66757 , H01L29/66825 , H01L29/66833 , H01L29/78609 , H01L29/78618 , H01L29/7881
摘要： The semiconductor device has a semiconductor layer, a gate electrode which covers an end portion of the semiconductor layer, and an insulating layer for insulating the semiconductor layer and the gate electrode. The film thickness of the insulating layer which insulates a region where an end portion of the semiconductor layer and the gate electrode overlap each other is thicker than the film thickness of the insulating layer which covers the central portion of the semiconductor layer.
摘要翻译：半导体器件具有半导体层，覆盖半导体层的端部的栅电极和用于使半导体层和栅电极绝缘的绝缘层。使半导体层的端部与栅电极重叠的区域绝缘的绝缘层的膜厚比覆盖半导体层的中心部的绝缘层的膜厚厚。

8. 发明授权

US07821002B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07821002B2
公开(公告)日：2010-10-26
申请号：US11790072
申请日：2007-04-23
申请人： Shunpei Yamazaki , Yukie Suzuki , Yasuyuki Arai , Yoshitaka Moriya , Kazuko Ikeda , Yoshifumi Tanada , Shuhei Takahashi
发明人： Shunpei Yamazaki , Yukie Suzuki , Yasuyuki Arai , Yoshitaka Moriya , Kazuko Ikeda , Yoshifumi Tanada , Shuhei Takahashi
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/062 , H01L29/76
CPC分类号： H01L29/42368 , H01L21/28273 , H01L21/28282 , H01L21/84 , H01L27/12 , H01L27/1203 , H01L27/1214 , H01L27/1248 , H01L27/1255 , H01L27/13 , H01L29/42384 , H01L29/66757 , H01L29/66825 , H01L29/66833 , H01L29/78609 , H01L29/78618 , H01L29/7881
摘要： The semiconductor device has a semiconductor layer, a gate electrode which covers an end portion of the semiconductor layer, and an insulating layer for insulating the semiconductor layer and the gate electrode. The film thickness of the insulating layer which insulates a region where an end portion of the semiconductor layer and the gate electrode overlap each other is thicker than the film thickness of the insulating layer which covers the central portion of the semiconductor layer.
摘要翻译：半导体器件具有半导体层，覆盖半导体层的端部的栅电极和用于使半导体层和栅电极绝缘的绝缘层。使半导体层的端部与栅电极重叠的区域绝缘的绝缘层的膜厚比覆盖半导体层的中心部的绝缘层的膜厚厚。

9. 发明申请

US20070281400A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070281400A1
公开(公告)日：2007-12-06
申请号：US11790072
申请日：2007-04-23
申请人： Shunpei Yamazaki , Yukie Suzuki , Yasuyuki Arai , Yoshitaka Moriya , Kazuko Ikeda , Yoshifumi Tanada , Shuhei Takahashi
发明人： Shunpei Yamazaki , Yukie Suzuki , Yasuyuki Arai , Yoshitaka Moriya , Kazuko Ikeda , Yoshifumi Tanada , Shuhei Takahashi
IPC分类号： H01L27/12 , H01L21/02
CPC分类号： H01L29/42368 , H01L21/28273 , H01L21/28282 , H01L21/84 , H01L27/12 , H01L27/1203 , H01L27/1214 , H01L27/1248 , H01L27/1255 , H01L27/13 , H01L29/42384 , H01L29/66757 , H01L29/66825 , H01L29/66833 , H01L29/78609 , H01L29/78618 , H01L29/7881
摘要： The semiconductor device has a semiconductor layer, a gate electrode which covers an end portion of the semiconductor layer, and an insulating layer for insulating the semiconductor layer and the gate electrode. The film thickness of the insulating layer which insulates a region where an end portion of the semiconductor layer and the gate electrode overlap each other is thicker than the film thickness of the insulating layer which covers the central portion of the semiconductor layer.
摘要翻译：半导体器件具有半导体层，覆盖半导体层的端部的栅电极和用于使半导体层和栅电极绝缘的绝缘层。使半导体层的端部与栅电极重叠的区域绝缘的绝缘层的膜厚比覆盖半导体层的中心部的绝缘层的膜厚厚。

10. 发明申请

US20080293322A1 Light emitting device and manufacturing method thereof 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US20080293322A1
公开(公告)日：2008-11-27
申请号：US12219648
申请日：2008-07-25
申请人： Masayuki Sakakura , Shuhei Takahashi , Kazuko Ikeda , Tomoya Futamura
发明人： Masayuki Sakakura , Shuhei Takahashi , Kazuko Ikeda , Tomoya Futamura
IPC分类号： H01J9/02
CPC分类号： H01L51/5253 , H01L27/1214 , H01L27/1248 , H01L27/3244 , H01L27/3248 , H01L27/3258 , H05B33/04
摘要： An object of the present invention is to provide a structure and a manufacturing method of a light emitting device, which reduces the amount of water remaining in the light emitting device. Another object of the invention is to provide a structure and a manufacturing method of a light emitting device, which suppresses the deterioration of a light emitting element due to water remaining in the light emitting device. A light emitting device of the invention includes a thin film transistor, an insulating layer covering the thin film transistor, an electrode which is electrically connected to the thin film transistor through a contact hole formed on the insulating layer, and a light emitting element formed by interposing a light emitting layer between a first electrode which is electrically connected to the electrode and a second electrode. The light emitting device further includes a layer formed of a different material from that of the insulating layer only between the electrode and the first electrode over the insulating layer and the insulating layer.
摘要翻译：本发明的目的是提供一种发光装置的结构和制造方法，其减少了发光装置中剩余的水量。本发明的另一个目的是提供一种发光装置的结构和制造方法，其抑制由于剩余在发光装置中的水而导致的发光元件的劣化。本发明的发光器件包括薄膜晶体管，覆盖薄膜晶体管的绝缘层，通过形成在绝缘层上的接触孔与薄膜晶体管电连接的电极，以及由绝缘层形成的发光元件在与电极电连接的第一电极和第二电极之间插入发光层。发光器件还包括仅在绝缘层和绝缘层上的电极和第一电极之间的与绝缘层不同的材料形成的层。

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