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1. 发明授权

US08421069B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08421069B2
公开(公告)日：2013-04-16
申请号：US12904579
申请日：2010-10-14
申请人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
IPC分类号： H01L29/10 , H01L29/12 , H01L29/04 , H01L31/00 , H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： H01L29/7869 , H01L21/84 , H01L23/552 , H01L23/60 , H01L23/66 , H01L25/16 , H01L27/0222 , H01L27/10873 , H01L27/12 , H01L27/1225 , H01L28/20 , H01L28/60 , H01L29/78609 , H01L2223/6677 , H01L2924/0002 , H01L2924/00
摘要： An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit included in an LSI, a CPU, or a memory is manufactured using the transistor which is formed using an oxide semiconductor which is an intrinsic or substantially intrinsic semiconductor obtained by removal of impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than a silicon semiconductor, and is formed over a semiconductor substrate. With the transistor which is formed over the semiconductor substrate and includes the highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device whose power consumption due to leakage current is low can be realized.
摘要翻译：目的是减少用于LSI，CPU或存储器的晶体管的漏电流和寄生电容。包括在LSI，CPU或存储器中的半导体集成电路使用使用氧化物半导体形成的晶体管来制造，所述氧化物半导体是通过从作为电子给体（供体）中除去作为电子给体（供体）的杂质而获得的内在或本质上的半导体氧化物半导体，并且具有比硅半导体更大的能隙，并且形成在半导体衬底上。通过形成在半导体衬底上的晶体管，并且包括具有充分降低的氢浓度的高度净化的氧化物半导体层，可以实现其由漏电流引起的功率消耗低的半导体器件。

2. 发明申请

US20110089927A1 VOLTAGE REGULATOR CIRCUIT 有权
标题翻译：电压调节器电路
公开(公告)号：US20110089927A1
公开(公告)日：2011-04-21
申请号：US12909556
申请日：2010-10-21
申请人： Shunpei Yamazaki , Hiroyuki Miyake , Masashi Tsubuku , Kosei Noda
发明人： Shunpei Yamazaki , Hiroyuki Miyake , Masashi Tsubuku , Kosei Noda
IPC分类号： G05F3/08
CPC分类号： H01L29/78696 , H01L21/84 , H01L27/105 , H01L27/1225 , H01L27/124 , H01L27/1255 , H01L29/24 , H01L29/66969 , H01L29/7869 , H02M3/073 , H02M3/158
摘要： A transistor includes a gate, a source, and a drain, the gate is electrically connected to the source or the drain, a first signal is input to one of the source and the drain, and an oxide semiconductor layer whose carrier concentration is 5×1014/cm3 or less is used for a channel formation layer. A capacitor includes a first electrode and a second electrode, the first electrode is electrically connected to the other of the source and the drain of the transistor, and a second signal which is a clock signal is input to the second electrode. A voltage of the first signal is stepped up or down to obtain a third signal which is output as an output signal through the other of the source and the drain of the transistor.
摘要翻译：晶体管包括栅极，源极和漏极，栅极电连接到源极或漏极，第一信号被输入到源极和漏极中的一个，以及载流子浓度为5× 1014 / cm3以下用于沟道形成层。电容器包括第一电极和第二电极，第一电极电连接到晶体管的源极和漏极中的另一个，并且作为时钟信号的第二信号被输入到第二电极。第一信号的电压被升高或降低以获得通过晶体管的源极和漏极中的另一个输出作为输出信号的第三信号。

3. 发明授权

US10061172B2 Liquid crystal display device and electronic apparatus having the same 有权
公开(公告)号：US10061172B2
公开(公告)日：2018-08-28
申请号：US12904634
申请日：2010-10-14
申请人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Masashi Tsubuku , Kosei Noda
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Masashi Tsubuku , Kosei Noda
IPC分类号： G09G3/36 , G02F1/1368 , H01L27/12 , H01L29/786
CPC分类号： G02F1/1368 , G09G3/3611 , G09G3/3648 , G09G3/3674 , G09G3/3677 , G09G5/18 , G09G2310/0286 , G09G2320/103 , G09G2330/021 , G09G2330/022 , G09G2330/027 , H01L27/1225 , H01L29/7869
摘要： A liquid crystal display device includes: a driver circuit portion; a pixel portion; a signal generation circuit for generating a control signal for driving the driver circuit portion and an image signal which is supplied to the pixel portion; a memory circuit; a comparison circuit for detecting a difference of image signals for a series of frame periods among image signals stored for respective frame periods in the memory circuit; a selection circuit which selects and outputs the image signals for the series of frame periods when the difference is detected in the comparison circuit; and a display control circuit which supplies the control signal and the image signals output from the selection circuit, to the driver circuit portion when the difference is detected in the comparison circuit, and stops supplying the control signal to the driver circuit portion when the difference is not detected in the comparison circuit.

4. 发明授权

US08421068B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08421068B2
公开(公告)日：2013-04-16
申请号：US12904565
申请日：2010-10-14
申请人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
IPC分类号： H01L29/10 , H01L29/12 , H01L29/04 , H01L31/00 , H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： H01L29/26 , G06K19/07758 , G11C7/00 , G11C19/28 , H01L21/8236 , H01L23/66 , H01L27/0883 , H01L27/1225 , H01L29/24 , H01L29/66969 , H01L29/78609 , H01L29/7869 , H01L29/78696 , H01L2223/6677 , H02M3/07
摘要： An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.
摘要翻译：目的是减少用于LSI，CPU或存储器的晶体管的漏电流和寄生电容。使用薄膜晶体管制造诸如LSI，CPU或存储器的半导体集成电路，其中使用氧化物半导体形成沟道形成区域，该氧化物半导体通过去除作为电子给体的杂质而成为本征或本质上的半导体（供体），并且具有比硅半导体更大的能隙。通过使用具有充分降低的氢浓度的高度净化的氧化物半导体层的薄膜晶体管，可以实现由于漏电流而具有低功耗的半导体器件。

5. 发明申请

US20110090204A1 LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC APPARATUS HAVING THE SAME 审中-公开
标题翻译：液晶显示装置和具有该液晶显示装置的电子装置
公开(公告)号：US20110090204A1
公开(公告)日：2011-04-21
申请号：US12904634
申请日：2010-10-14
申请人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Masashi Tsubuku , Kosei Noda
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Masashi Tsubuku , Kosei Noda
IPC分类号： G09G3/36 , G06F3/038
CPC分类号： G02F1/1368 , G09G3/3611 , G09G3/3648 , G09G3/3674 , G09G3/3677 , G09G5/18 , G09G2310/0286 , G09G2320/103 , G09G2330/021 , G09G2330/022 , G09G2330/027 , H01L27/1225 , H01L29/7869
摘要： A liquid crystal display device includes: a driver circuit portion; a pixel portion; a signal generation circuit for generating a control signal for driving the driver circuit portion and an image signal which is supplied to the pixel portion; a memory circuit; a comparison circuit for detecting a difference of image signals for a series of frame periods among image signals stored for respective frame periods in the memory circuit; a selection circuit which selects and outputs the image signals for the series of frame periods when the difference is detected in the comparison circuit; and a display control circuit which supplies the control signal and the image signals output from the selection circuit, to the driver circuit portion when the difference is detected in the comparison circuit, and stops supplying the control signal to the driver circuit portion when the difference is not detected in the comparison circuit.
摘要翻译：液晶显示装置包括：驱动电路部分; 像素部分; 信号产生电路，用于产生用于驱动驱动电路部分的控制信号和提供给像素部分的图像信号; 存储电路; 比较电路，用于检测在存储电路中为各个帧周期存储的图像信号中的一系列帧周期的图像信号的差异; 选择电路，当在比较电路中检测到差异时，选择并输出用于一系列帧周期的图像信号; 以及显示控制电路，当在比较电路中检测到差异时，将从选择电路输出的控制信号和图像信号提供给驱动电路部分，并且当差值为在比较电路中未检测到。

6. 发明授权

US08963517B2 Voltage regulator circuit comprising transistor which includes an oixide semiconductor 有权
标题翻译：包括晶体管的电压调节器电路包括氧化硅半导体
公开(公告)号：US08963517B2
公开(公告)日：2015-02-24
申请号：US12909556
申请日：2010-10-21
申请人： Shunpei Yamazaki , Hiroyuki Miyake , Masashi Tsubuku , Kosei Noda
发明人： Shunpei Yamazaki , Hiroyuki Miyake , Masashi Tsubuku , Kosei Noda
IPC分类号： G05F3/16 , G05F1/618 , G05F1/00 , H02M3/07
CPC分类号： H01L29/78696 , H01L21/84 , H01L27/105 , H01L27/1225 , H01L27/124 , H01L27/1255 , H01L29/24 , H01L29/66969 , H01L29/7869 , H02M3/073 , H02M3/158
摘要： A transistor includes a gate, a source, and a drain, the gate is electrically connected to the source or the drain, a first signal is input to one of the source and the drain, and an oxide semiconductor layer whose carrier concentration is 5×1014/cm3 or less is used for a channel formation layer. A capacitor includes a first electrode and a second electrode, the first electrode is electrically connected to the other of the source and the drain of the transistor, and a second signal which is a clock signal is input to the second electrode. A voltage of the first signal is stepped up or down to obtain a third signal which is output as an output signal through the other of the source and the drain of the transistor.
摘要翻译：晶体管包括栅极，源极和漏极，栅极电连接到源极或漏极，第一信号被输入到源极和漏极中的一个，以及载流子浓度为5× 1014 / cm3以下用于沟道形成层。电容器包括第一电极和第二电极，第一电极电连接到晶体管的源极和漏极中的另一个，并且作为时钟信号的第二信号被输入到第二电极。第一信号的电压被升高或降低以获得通过晶体管的源极和漏极中的另一个输出作为输出信号的第三信号。

7. 发明申请

US20110101331A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110101331A1
公开(公告)日：2011-05-05
申请号：US12904579
申请日：2010-10-14
申请人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
IPC分类号： H01L29/78
CPC分类号： H01L29/7869 , H01L21/84 , H01L23/552 , H01L23/60 , H01L23/66 , H01L25/16 , H01L27/0222 , H01L27/10873 , H01L27/12 , H01L27/1225 , H01L28/20 , H01L28/60 , H01L29/78609 , H01L2223/6677 , H01L2924/0002 , H01L2924/00
摘要： An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit included in an LSI, a CPU, or a memory is manufactured using the transistor which is formed using an oxide semiconductor which is an intrinsic or substantially intrinsic semiconductor obtained by removal of impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than a silicon semiconductor, and is formed over a semiconductor substrate. With the transistor which is formed over the semiconductor substrate and includes the highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device whose power consumption due to leakage current is low can be realized.
摘要翻译：目的是减少用于LSI，CPU或存储器的晶体管的泄漏电流和寄生电容。包括在LSI，CPU或存储器中的半导体集成电路使用使用氧化物半导体形成的晶体管来制造，所述氧化物半导体是通过从作为电子给体（供体）中除去作为电子给体（供体）的杂质而获得的内在或本质上的半导体氧化物半导体，并且具有比硅半导体更大的能隙，并且形成在半导体衬底上。通过形成在半导体衬底上的晶体管，并且包括具有充分降低的氢浓度的高度净化的氧化物半导体层，可以实现其由漏电流引起的功率消耗低的半导体器件。

8. 发明申请

US20110089414A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110089414A1
公开(公告)日：2011-04-21
申请号：US12904565
申请日：2010-10-14
申请人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
IPC分类号： H01L29/12
CPC分类号： H01L29/26 , G06K19/07758 , G11C7/00 , G11C19/28 , H01L21/8236 , H01L23/66 , H01L27/0883 , H01L27/1225 , H01L29/24 , H01L29/66969 , H01L29/78609 , H01L29/7869 , H01L29/78696 , H01L2223/6677 , H02M3/07
摘要： An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.
摘要翻译：目的是减少用于LSI，CPU或存储器的晶体管的泄漏电流和寄生电容。使用薄膜晶体管制造诸如LSI，CPU或存储器的半导体集成电路，其中使用氧化物半导体形成沟道形成区域，该氧化物半导体通过去除作为电子给体的杂质而成为本征或本质上的半导体（供体），并且具有比硅半导体更大的能隙。通过使用具有充分降低的氢浓度的高度净化的氧化物半导体层的薄膜晶体管，可以实现由于漏电流而具有低功耗的半导体器件。

9. 发明授权

US09293104B2 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US09293104B2
公开(公告)日：2016-03-22
申请号：US13167023
申请日：2011-06-23
申请人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kouhei Toyotaka
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kouhei Toyotaka
IPC分类号： G09G5/10 , G09G3/36 , G09G3/34
CPC分类号： G09G3/3677 , G09G3/3413 , G09G3/3688 , G09G2310/0235
摘要： The liquid crystal display device includes a pixel portion including first and second regions and light sources. The first and second regions each include a liquid crystal element whose transmissivity is controlled in accordance with a voltage of an image signal and a transistor for controlling holding of the voltage, whose off-state current is extremely low. The light sources perform first and second drivings: lights whose hues are different from each other are sequentially supplied to the first region in a first rotating order and the lights are sequentially supplied to the second region in a second rotating order which is different from the first rotating order in the first driving; and a light having a single hue is supplied consecutively to one or both of the first and second regions in the second driving. The period for holding the voltage is different between the first and second drivings.
摘要翻译：液晶显示装置包括包括第一和第二区域和光源的像素部分。第一和第二区域各自包括根据图像信号的电压来控制透射率的液晶元件和用于控制截止电流极低的电压的保持的晶体管。光源执行第一和第二驱动：其色调彼此不同的灯以第一旋转顺序被顺序提供给第一区域，并且以与第一和第二驱动器不同的第二旋转顺序顺序地将光提供给第二区域在第一次驾驶时旋转顺序; 并且具有单个色调的光被连续地提供给第二驱动中的第一和第二区域中的一个或两个。用于保持电压的时段在第一和第二驱动之间是不同的。

10. 发明授权

US09224339B2 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US09224339B2
公开(公告)日：2015-12-29
申请号：US13167019
申请日：2011-06-23
申请人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kouhei Toyotaka
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kouhei Toyotaka
IPC分类号： G06F3/041 , G09G3/34 , G09G3/36 , G09G3/20
CPC分类号： G09G3/3406 , G09G3/2025 , G09G3/3413 , G09G3/3607 , G09G3/3659 , G09G2300/0456 , G09G2330/021
摘要： A liquid crystal display device comprising a backlight and a pixel portion including first to 2n-th scan lines, wherein, in a first case of expressing a color image, first pixels controlled by the first to n-th scan lines are configured to express a first image using at least one of first to third hues supplied in a first rotating order, and second pixels controlled by the (n+1)-th to 2n-th scan lines are configured to express a second image using at least one of the first to third hues supplied in a second rotating order, wherein, in a second case of expressing a monochrome image, the first and second pixels controlled by the first to 2n-th scan lines are configured to express the monochrome image by external light reflected by the reflective pixel electrode, and wherein the first rotating order is different from the second rotating order.
摘要翻译：一种液晶显示装置，包括背光源和包括第一至第2n扫描线的像素部分，其中，在表示彩色图像的第一种情况下，由第一至第n扫描线控制的第一像素被配置为表示使用以第一旋转顺序提供的第一至第三色调中的至少一个色调的第一图像，以及由第（n + 1）至第2n扫描线控制的第二像素，被配置为使用至少一个第一至第三色调以第二旋转顺序提供，其中，在表示单色图像的第二种情况下，由第一至第2n扫描线控制的第一和第二像素被配置为通过由所述反射像素电极，并且其中所述第一旋转顺序与所述第二旋转顺序不同。

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