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1. 发明申请

US20110104859A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20110104859A1
公开(公告)日：2011-05-05
申请号：US12953066
申请日：2010-11-23
申请人： Shunpei YAMAZAKI , Ryosuke WATANABE , Jun KOYAMA
发明人： Shunpei YAMAZAKI , Ryosuke WATANABE , Jun KOYAMA
IPC分类号： H01L21/84
CPC分类号： H01L21/6835 , H01L23/552 , H01L23/60 , H01L24/75 , H01L24/83 , H01L27/1248 , H01L27/1266 , H01L27/13 , H01L2221/68354 , H01L2221/68363 , H01L2221/68368 , H01L2223/6677 , H01L2224/16 , H01L2224/2919 , H01L2224/83101 , H01L2224/83192 , H01L2224/838 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01054 , H01L2924/0106 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/0781 , H01L2924/12044 , H01L2924/14 , H01L2924/15788 , H01L2924/19041 , H01L2924/19043 , H01L2924/00
摘要： A manufacturing method of a semiconductor device is provided, which includes a process in which a transistor is formed over a first substrate; a process in which a first insulating layer is formed over the transistor; a process in which a first conductive layer connected to a source or a drain of the transistor is formed; a process in which a second substrate provided with a second insulating layer is arranged so that the first insulating layer is attached to the second insulating layer; a process in which the second insulating layer is separated from the second substrate; and a process in which a third substrate provided with a second conductive layer which functions as an antenna is arranged so that the first conductive layer is electrically connected to the second conductive layer.
摘要翻译：提供一种半导体器件的制造方法，其包括在第一衬底上形成晶体管的工艺; 在晶体管上形成第一绝缘层的工艺; 形成与晶体管的源极或漏极连接的第一导电层的工序; 其中设置有第二绝缘层的第二基板被布置成使得第一绝缘层附接到第二绝缘层的工艺; 第二绝缘层与第二基板分离的工序; 并且其中设置有用作天线的第二导电层的第三基板被布置成使得第一导电层电连接到第二导电层的工艺。

2. 发明申请

US20120256179A1 TRANSISTOR AND DISPLAY DEVICE 审中-公开
标题翻译：晶体管和显示器件
公开(公告)号：US20120256179A1
公开(公告)日：2012-10-11
申请号：US13528009
申请日：2012-06-20
申请人： Shunpei YAMAZAKI , Masayuki SAKAKURA , Ryosuke WATANABE , Junichiro SAKATA , Kengo AKIMOTO , Akiharu MIYANAGA , Takuya HIROHASHI , Hideyuki KISHIDA
发明人： Shunpei YAMAZAKI , Masayuki SAKAKURA , Ryosuke WATANABE , Junichiro SAKATA , Kengo AKIMOTO , Akiharu MIYANAGA , Takuya HIROHASHI , Hideyuki KISHIDA
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/04 , H01L29/045 , H01L29/78618 , H01L29/78693 , H01L29/78696
摘要： To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a bottom-gate transistor formed using an oxide semiconductor for a channel region. An oxide semiconductor layer subjected to dehydration or dehydrogenation through heat treatment is used as an active layer. The active layer includes a first region of a superficial portion microcrystallized and a second region of the rest portion. By using the oxide semiconductor layer having such a structure, a change to an n-type, which is attributed to entry of moisture to the superficial portion or elimination of oxygen from the superficial portion, and generation of a parasitic channel can be suppressed. In addition, contact resistance between the oxide semiconductor layer and source and drain electrodes can be reduced.
摘要翻译：提供具有良好的电特性和高可靠性的晶体管以及包括该晶体管的显示装置。晶体管是使用用于沟道区的氧化物半导体形成的底栅晶体管。使用通过热处理进行脱水或脱氢的氧化物半导体层作为活性层。有源层包括微结晶的浅表部分的第一区域和其余部分的第二区域。通过使用具有这种结构的氧化物半导体层，可以抑制归因于表层部分的水分进入或从表面部分的氧的消除导致的n型变化，以及寄生通道的产生。此外，可以减小氧化物半导体层与源极和漏极之间的接触电阻。

3. 发明申请

US20110204362A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110204362A1
公开(公告)日：2011-08-25
申请号：US13026518
申请日：2011-02-14
申请人： Kengo AKIMOTO , Ryosuke WATANABE , Masashi TSUBUKU , Shunpei YAMAZAKI
发明人： Kengo AKIMOTO , Ryosuke WATANABE , Masashi TSUBUKU , Shunpei YAMAZAKI
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , H01L29/41733 , H01L29/66969 , H01L29/78618
摘要： It is an object to provide a semiconductor device including an oxide semiconductor, in which miniaturization of a transistor is achieved and the concentration of an electric field is relieved. The width of a gate electrode is reduced and a space between a source electrode layer and a drain electrode layer is shortened. By adding a rare gas in a self-alignment manner with the use of a gate electrode as a mask, a low-resistance region in contact with a channel formation region can be provided in an oxide semiconductor layer. Accordingly, even when the width of the gate electrode, that is, the line width of a gate wiring is small, the low-resistance region can be provided with high positional accuracy, so that miniaturization of a transistor can be realized.
摘要翻译：本发明的目的是提供一种包括氧化物半导体的半导体器件，其中实现了晶体管的小型化和电场的集中。栅电极的宽度减小，源电极层和漏电极层之间的间隔缩短。通过使用栅电极作为掩模以自对准的方式添加稀有气体，可以在氧化物半导体层中提供与沟道形成区域接触的低电阻区域。因此，即使栅电极的宽度，即栅极配线的线宽小，也能够提供高电位区域的高位置精度，能够实现晶体管的小型化。

4. 发明申请

US20110062436A1 TRANSISTOR AND DISPLAY DEVICE 审中-公开
标题翻译：晶体管和显示器件
公开(公告)号：US20110062436A1
公开(公告)日：2011-03-17
申请号：US12880343
申请日：2010-09-13
申请人： Shunpei YAMAZAKI , Masayuki SAKAKURA , Ryosuke WATANABE , Junichiro SAKATA , Kengo AKIMOTO , Akiharu MIYANAGA , Takuya HIROHASHI , Hideyuki KISHIDA
发明人： Shunpei YAMAZAKI , Masayuki SAKAKURA , Ryosuke WATANABE , Junichiro SAKATA , Kengo AKIMOTO , Akiharu MIYANAGA , Takuya HIROHASHI , Hideyuki KISHIDA
IPC分类号： H01L29/12
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/04 , H01L29/045 , H01L29/78618 , H01L29/78693 , H01L29/78696
摘要： To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a bottom-gate transistor formed using an oxide semiconductor for a channel region. An oxide semiconductor layer subjected to dehydration or dehydrogenation through heat treatment is used as an active layer. The active layer includes a first region of a superficial portion microcrystallized and a second region of the rest portion. By using the oxide semiconductor layer having such a structure, a change to an n-type, which is attributed to entry of moisture to the superficial portion or elimination of oxygen from the superficial portion, and generation of a parasitic channel can be suppressed. In addition, contact resistance between the oxide semiconductor layer and source and drain electrodes can be reduced.
摘要翻译：提供具有良好的电特性和高可靠性的晶体管以及包括该晶体管的显示装置。晶体管是使用用于沟道区的氧化物半导体形成的底栅晶体管。使用通过热处理进行脱水或脱氢的氧化物半导体层作为活性层。有源层包括微结晶的浅表部分的第一区域和其余部分的第二区域。通过使用具有这种结构的氧化物半导体层，可以抑制归因于表层部分的水分进入或从表面部分的氧的消除导致的n型变化，以及寄生通道的产生。此外，可以减小氧化物半导体层与源极和漏极之间的接触电阻。

5. 发明申请

US20110287591A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110287591A1
公开(公告)日：2011-11-24
申请号：US13110314
申请日：2011-05-18
申请人： Shunpei YAMAZAKI , Ryosuke WATANABE , Suzunosuke HIRAISHI , Junichiro SAKATA
发明人： Shunpei YAMAZAKI , Ryosuke WATANABE , Suzunosuke HIRAISHI , Junichiro SAKATA
IPC分类号： H01L21/336 , H01L21/20
CPC分类号： H01L21/477 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L29/66969 , H01L29/7869
摘要： An object is to provide a semiconductor device including an oxide semiconductor, which has stable electrical characteristics and high reliability. In a manufacturing process of a bottom-gate transistor including an oxide semiconductor layer, heat treatment in an atmosphere containing oxygen and heat treatment in vacuum are sequentially performed for dehydration or dehydrogenation of the oxide semiconductor layer. In addition, irradiation with light having a short wavelength is performed concurrently with the heat treatment, whereby elimination of hydrogen, OH, or the like is promoted. A transistor including an oxide semiconductor layer on which dehydration or dehydrogenation treatment is performed through such heat treatment has improved stability, so that variation in electrical characteristics of the transistor due to light irradiation or a bias-temperature stress (BT) test is suppressed.
摘要翻译：目的在于提供一种具有稳定的电气特性和高可靠性的氧化物半导体的半导体装置。在包括氧化物半导体层的底栅晶体管的制造工艺中，在氧化物气氛中进行热处理，在真空中进行热处理，依次进行氧化物半导体层的脱水或脱氢。此外，与热处理同时进行具有短波长的光的照射，由此促进氢，OH等的消除。包括通过这种热处理进行脱水或脱氢处理的氧化物半导体层的晶体管具有改善的稳定性，从而抑制了由于光照射或偏压温度应力（BT）测试而导致的晶体管的电特性的变化。

6. 发明申请

US20110068335A1 OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE 有权
标题翻译：氧化物半导体膜和半导体器件
公开(公告)号：US20110068335A1
公开(公告)日：2011-03-24
申请号：US12887646
申请日：2010-09-22
申请人： Shunpei YAMAZAKI , Masayuki SAKAKURA , Ryosuke WATANABE , Junichiro SAKATA , Kengo AKIMOTO , Akiharu MIYANAGA , Takuya HIROHASHI , Hideyuki KISHIDA
发明人： Shunpei YAMAZAKI , Masayuki SAKAKURA , Ryosuke WATANABE , Junichiro SAKATA , Kengo AKIMOTO , Akiharu MIYANAGA , Takuya HIROHASHI , Hideyuki KISHIDA
IPC分类号： H01L29/786 , H01L21/44
CPC分类号： H01L29/78696 , H01L21/2636 , H01L27/1225 , H01L29/04 , H01L29/045 , H01L29/12 , H01L29/24 , H01L29/41733 , H01L29/66969 , H01L29/7869
摘要： It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.
摘要翻译：本发明的目的是提供具有良好电气特性的高度可靠的半导体器件以及包括半导体器件作为开关元件的显示器件。在包括氧化物半导体层的晶体管中，设置在氧化物半导体层的至少一个表面侧上的针状晶体在垂直于该表面的c轴方向上生长，并且包括平行于该表面的ab平面，以及除了针状晶体组是无定形区域或非晶态和微晶体混合的区域。因此，可以形成具有良好电特性的高可靠性半导体器件。

7. 发明申请

US20130002312A1 DRIVER CIRCUIT, METHOD OF MANUFACTURING THE DRIVER CIRCUIT, AND DISPLAY DEVICE INCLUDING THE DRIVER CIRCUIT 有权
公开(公告)号：US20130002312A1
公开(公告)日：2013-01-03
申请号：US13529120
申请日：2012-06-21
申请人： Shunpei YAMAZAKI , Jun KOYAMA
发明人： Shunpei YAMAZAKI , Jun KOYAMA
IPC分类号： H03K17/00 , H01R43/00
CPC分类号： H01L27/0266 , G09G3/3283 , G09G3/3677 , G09G3/3688 , G09G2300/0426 , G09G2310/0267 , G09G2310/0275 , G09G2310/0286 , G09G2330/04 , G11C19/28 , H01L27/1225 , H02H9/044 , Y10T29/49117 , Y10T428/24364 , Y10T428/24372 , Y10T428/2438
摘要： Provided are a driver circuit which suppresses damage of a semiconductor element due to ESD in a manufacturing process, a method of manufacturing the driver circuit. Further provided are a driver circuit provided with a protection circuit with low leakage current, and a method of manufacturing the driver circuit. By providing a protection circuit in a driver circuit to be electrically connected to a semiconductor element in the driver circuit, and by forming, at the same time, a transistor which serves as the semiconductor element in the driver circuit and a transistor included in the protection circuit in the driver circuit, damage of the semiconductor element due to ESD is suppressed in the process of manufacturing the driver circuit. Further, by using an oxide semiconductor film for the transistor included in the protection circuit in the driver circuit, leakage current in the protection circuit is reduced.

8. 发明申请

US20120314151A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120314151A1
公开(公告)日：2012-12-13
申请号：US13592911
申请日：2012-08-23
申请人： Shunpei YAMAZAKI , Jun KOYAMA
发明人： Shunpei YAMAZAKI , Jun KOYAMA
IPC分类号： H01L33/08 , G02F1/136
CPC分类号： H01L29/78696 , H01L27/124 , H01L27/127 , H01L27/3262 , H01L29/4908 , H01L29/78621 , H01L29/78624 , H01L29/78627 , H01L33/0041 , H01L2029/7863
摘要： The purpose of the present invention is to provide a reliable semiconductor device comprising TFTs having a large area integrated circuit with low wiring resistance. One of the features of the present invention is that an LDD region including a region which overlaps with a gate electrode and a region which does not overlap with the gate electrode is provided in one TFT. Another feature of the present invention is that gate electrode comprises a first conductive layer and a second conductive layer and portion of the gate wiring has a clad structure comprising the first conductive layer and the second conductive layer with a low resistance layer interposed therebetween
摘要翻译：本发明的目的是提供一种包括具有低布线电阻的大面积集成电路的TFT的可靠的半导体器件。本发明的特征之一是在一个TFT中设置包括与栅电极重叠的区域和不与栅电极重叠的区域的LDD区域。本发明的另一特征在于，栅电极包括第一导电层和第二导电层，并且栅极配线的一部分具有包含第一导电层和第二导电层的包层结构，其间具有低电阻层

9. 发明申请

US20120299003A1 ANALOG CIRCUIT AND SEMICONDUCTOR DEVICE 有权
标题翻译：模拟电路和半导体器件
公开(公告)号：US20120299003A1
公开(公告)日：2012-11-29
申请号：US13568186
申请日：2012-08-07
申请人： Shunpei YAMAZAKI , Jun KOYAMA , Atsushi HIROSE , Masashi TSUBUKU , Kosei NODA
发明人： Shunpei YAMAZAKI , Jun KOYAMA , Atsushi HIROSE , Masashi TSUBUKU , Kosei NODA
IPC分类号： H01L29/22 , H01L27/15 , H01L29/786
CPC分类号： H01L27/1225 , H01L21/823412 , H01L27/124 , H01L27/1255 , H01L27/156 , H01L27/3213 , H01L29/24 , H01L29/36 , H01L29/7869 , H01L29/78693 , H01L33/025 , H01L2924/0002 , H04M1/0266 , H04R1/02 , H01L2924/00
摘要： An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.
摘要翻译：目的是获得使用其中使用氧化物半导体层的薄膜晶体管，在检测信号和宽动态范围中具有高灵敏度的半导体器件。使用具有作为沟道形成层的功能的氧化物半导体的薄膜晶体管形成模拟电路，其氢浓度为5×1019个原子/ cm3以下，并且在该状态下基本上起绝缘体的作用其中不产生电场。因此，可以获得在检测信号中具有高灵敏度和宽动态范围的半导体器件。

10. 发明申请

US20120206325A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20120206325A1
公开(公告)日：2012-08-16
申请号：US13367711
申请日：2012-02-07
申请人： Shunpei YAMAZAKI , Jun KOYAMA
发明人： Shunpei YAMAZAKI , Jun KOYAMA
IPC分类号： G09G3/36
CPC分类号： G09G3/003 , G02B27/0093 , G02B27/2214 , G02F1/13471 , G09G3/3611 , H04N13/31 , H04N13/315 , H04N13/356 , H04N13/373
摘要： A display device includes a display panel and a shutter panel that is provided on the viewer side of the display panel and includes a first liquid crystal element and a second liquid crystal element adjacent to each other. In a first display state, a first light-shielding region and a first light-transmitting region are formed in the shutter panel by the first liquid crystal element, and light from the display panel is emitted through the first light-transmitting region. In a second display state, a second light-shielding region larger than the first light-shielding region and a second light-transmitting region smaller than the first light-transmitting region are formed in the shutter panel by the first liquid crystal element and the second liquid crystal element, and light from the display panel is emitted through the second light-transmitting region.
摘要翻译：显示装置包括显示面板和快门面板，其设置在显示面板的观察者侧，并且包括彼此相邻的第一液晶元件和第二液晶元件。在第一显示状态下，通过第一液晶元件在快门面板中形成第一遮光区域和第一透光区域，并且通过第一透光区域发射来自显示面板的光。在第二显示状态下，通过第一液晶元件在快门面板中形成比第一遮光区域大的第二遮光区域和小于第一透光区域的第二透光区域，液晶元件，并且来自显示面板的光通过第二透光区域发射。

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