专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110084263A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110084263A1
公开(公告)日：2011-04-14
申请号：US12894911
申请日：2010-09-30
申请人： Shunpei YAMAZAKI , Kei TAKAHASHI , Yoshiaki ITO
发明人： Shunpei YAMAZAKI , Kei TAKAHASHI , Yoshiaki ITO
IPC分类号： H01L29/12 , H01L21/16
CPC分类号： H01L29/7869 , H01L27/1251 , H01L29/045 , H01L29/0611 , H01L29/24 , H01L29/41733 , H01L29/42384 , H01L29/66477 , H01L29/66969 , H01L29/78618 , H01L29/78642 , H01L29/78648 , H01L29/78693 , H01L29/78696
摘要： It is an object to provide a semiconductor device having a new productive semiconductor material and a new structure. The semiconductor device includes a first conductive layer over a substrate, a first insulating layer which covers the first conductive layer, an oxide semiconductor layer over the first insulating layer that overlaps with part of the first conductive layer and has a crystal region in a surface part, second and third conductive layers formed in contact with the oxide semiconductor layer, an insulating layer which covers the oxide semiconductor layer and the second and third conductive layers, and a fourth conductive layer over the insulating layer that overlaps with part of the oxide semiconductor layer.
摘要翻译：本发明的目的是提供一种具有新的生产半导体材料和新结构的半导体器件。半导体器件包括：衬底上的第一导电层，覆盖第一导电层的第一绝缘层，与第一导电层的一部分重叠的第一绝缘层上的氧化物半导体层，并且在表面部分中具有晶体区域形成为与氧化物半导体层接触的第二和第三导电层，覆盖氧化物半导体层和第二和第三导电层的绝缘层，以及绝缘层上的与氧化物半导体层的一部分重叠的第四导电层。

2. 发明申请

US20110115839A1 DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME 有权
标题翻译：显示装置和包括其的电子装置
公开(公告)号：US20110115839A1
公开(公告)日：2011-05-19
申请号：US12945475
申请日：2010-11-12
申请人： Kei TAKAHASHI , Shunpei YAMAZAKI
发明人： Kei TAKAHASHI , Shunpei YAMAZAKI
IPC分类号： G09G5/02 , H01L33/08 , G09G3/36
CPC分类号： H01L27/1225 , G09G3/3233 , G09G3/3266 , G09G2300/0814 , G09G2300/0842 , G09G2310/0286 , G09G2310/08 , H01L27/3246 , H01L27/3248 , H01L27/3262 , H01L29/78672 , H01L29/7869
摘要： A display device includes a pixel portion including a plurality of pixels each including a first transistor, a second transistor, and a light-emitting element, in which a gate of the first transistor is electrically connected to a scan line, one of a source and a drain of the first transistor is electrically connected to a signal line, and the other of them is electrically connected to a gate of the second transistor; one of a source and a drain of the second transistor is electrically connected to a power supply line and the other of them is electrically connected to the light-emitting element, and the first transistor includes an oxide semiconductor layer. A period when the display device displays a still image includes a period in which output of a signal to all the scan lines in the pixel portion is stopped.
摘要翻译：显示装置包括像素部分，其包括多个像素，每个像素包括第一晶体管，第二晶体管和发光元件，其中第一晶体管的栅极电连接到扫描线，源和源之一第一晶体管的漏极与信号线电连接，另一端与第二晶体管的栅极电连接; 第二晶体管的源极和漏极之一电连接到电源线，并且另一个电连接到发光元件，并且第一晶体管包括氧化物半导体层。显示装置显示静止图像的周期包括对像素部分中的所有扫描线的信号的输出停止的时段。

3. 发明申请

US20070194314A1 DISPLAY DEVICE AND ELECTRONIC APPARATUS HAVING THE DISPLAY DEVICE 有权
标题翻译：具有显示装置的显示装置和电子装置
公开(公告)号：US20070194314A1
公开(公告)日：2007-08-23
申请号：US11548079
申请日：2006-10-10
申请人： Shunpei YAMAZAKI , Mitsuaki OSAME , Tomoyuki IWABUCHI , Kei TAKAHASHI , Ryo NOZAWA , Mizuki SATO , Ryota FUKUMOTO
发明人： Shunpei YAMAZAKI , Mitsuaki OSAME , Tomoyuki IWABUCHI , Kei TAKAHASHI , Ryo NOZAWA , Mizuki SATO , Ryota FUKUMOTO
IPC分类号： H01L29/76
CPC分类号： G02F1/0123 , G02F2001/134345 , G02F2201/58 , G09G3/3275 , G09G2320/029 , G09G2320/041 , G09G2320/043 , H01L27/3269
摘要： A light-emitting element has a property that a resistance value (internal resistance) changes in accordance with an environmental temperature. It is an object to downsize a monitoring element which corrects an influence of variations in current value of the light-emitting element, which are caused by an environmental temperature change and a change with time. A pixel includes a plurality of sub-pixels, areas of light-emitting elements provided in the individual sub-pixels are made to be different from each other, and an area of a monitoring element is made to be the same as an area of the light-emitting element in any of the sub-pixels, thereby correcting light-emission of the pixel by the monitoring element.
摘要翻译：发光元件具有电阻值（内部电阻）根据环境温度而变化的性质。本发明的目的是减小由环境温度变化和随时间变化引起的发光元件的电流值的变化的影响的监视元件的小型化。像素包括多个子像素，将设置在各个子像素中的发光元件的区域彼此不同，并且将监视元件的区域设置为与任何子像素中的发光元件，从而通过监视元件校正像素的发光。

4. 发明申请

US20110266564A1 SEMICONDUCTOR DISPLAY DEVICE 有权
标题翻译：半导体显示设备
公开(公告)号：US20110266564A1
公开(公告)日：2011-11-03
申请号：US13179824
申请日：2011-07-11
申请人： Shunpei YAMAZAKI , Jun KOYAMA , Yoshifumi TANADA , Hiroyuki MIYAKE , Kei TAKAHASHI
发明人： Shunpei YAMAZAKI , Jun KOYAMA , Yoshifumi TANADA , Hiroyuki MIYAKE , Kei TAKAHASHI
IPC分类号： H01L33/08
CPC分类号： H01L27/3276 , H01L27/124 , H01L27/1266
摘要： A semiconductor display device using a light-emitting element, which can suppress luminance unevenness among pixels due to the potential drop of a wiring, is provided. Power supply lines to which a power supply potential is supplied are electrically connected to each other in a display region where a plurality of pixels are arranged. Further, an interlayer insulating film is formed over a wiring (an auxiliary power supply line) for electrically connecting the power supply lines to each other in the display region and a gate electrode of a transistor included in a pixel; and the power supply lines are formed over the interlayer insulating film which is formed over the auxiliary power supply line and the gate electrode. Furthermore, a wiring (an auxiliary wiring) formed over the interlayer insulating film is electrically or directly connected to the auxiliary power supply line.
摘要翻译：提供一种使用能够抑制由于布线的电位下降引起的像素之间的亮度不均匀的发光元件的半导体显示装置。供给电源电位的电源线在布置有多个像素的显示区域中彼此电连接。此外，在用于将显示区域中的电源线彼此电连接并且包括在像素中的晶体管的栅电极的布线（辅助电源线）上形成层间绝缘膜; 并且在辅助电源线和栅电极之间形成的层间绝缘膜上形成电源线。此外，形成在层间绝缘膜上的布线（辅助布线）与辅助电源线电连接或直接连接。

5. 发明申请

US20110259420A1 PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：光电转换装置及其制造方法
公开(公告)号：US20110259420A1
公开(公告)日：2011-10-27
申请号：US13087714
申请日：2011-04-15
申请人： Shunpei YAMAZAKI , Hajime KIMURA , Yoshiaki ITO , Takuro OHMARU
发明人： Shunpei YAMAZAKI , Hajime KIMURA , Yoshiaki ITO , Takuro OHMARU
IPC分类号： H01L31/0203
CPC分类号： H01L31/202 , C23C14/08 , C23C14/34 , H01L21/02422 , H01L21/02538 , H01L21/02554 , H01L21/02565 , H01L21/0262 , H01L21/02672 , H01L31/0296 , H01L31/0304 , H01L31/0312 , H01L31/03685 , H01L31/03762 , H01L31/0392 , H01L31/075 , H01L31/1816 , H02S40/32 , Y02E10/544 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： It is an object to reduce the region of a photoelectric conversion element which light does not reach, to suppress deterioration of power generation efficiency, and to suppress manufacturing cost of a voltage conversion element. The present invention relates to a transmissive photoelectric conversion device which includes a photoelectric conversion element including an n-type semiconductor layer, an intrinsic semiconductor layer, and a p-type semiconductor layer; a voltage conversion element which is overlapped with the photoelectric conversion element and which includes an oxide semiconductor film for a channel formation region; and a conductive element which electrically connects the photoelectric conversion element and the voltage conversion element. The photoelectric conversion element is a solar cell. The voltage conversion element includes a transistor having a channel formation region including an oxide semiconductor film. The voltage conversion element is a DC-DC converter.
摘要翻译：本发明的目的是减少不能到达的光电转换元件的区域，以抑制发电效率的劣化，并且抑制电压转换元件的制造成本。本发明涉及一种透射光电转换装置，其包括：包括n型半导体层，本征半导体层和p型半导体层的光电转换元件; 电压转换元件，其与光电转换元件重叠并且包括用于沟道形成区域的氧化物半导体膜; 以及电连接光电转换元件和电压转换元件的导电元件。光电转换元件是太阳能电池。电压转换元件包括具有包括氧化物半导体膜的沟道形成区的晶体管。电压转换元件是DC-DC转换器。

6. 发明申请

US20130069055A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20130069055A1
公开(公告)日：2013-03-21
申请号：US13608044
申请日：2012-09-10
申请人： Shunpei YAMAZAKI , Atsuo ISOBE , Hiromachi GODO , Takehisa HATANO , Sachiaki TEZUKA , Suguru HONDO , Naoto YAMADE , Junichi KOEZUKA
发明人： Shunpei YAMAZAKI , Atsuo ISOBE , Hiromachi GODO , Takehisa HATANO , Sachiaki TEZUKA , Suguru HONDO , Naoto YAMADE , Junichi KOEZUKA
IPC分类号： H01L29/78
CPC分类号： H01L29/41733 , H01L29/78618 , H01L29/7869 , H01L29/78693
摘要： Provided is a semiconductor device in which an oxide semiconductor layer is provided; a pair of wiring layers which are provided with the gate electrode layer interposed therebetween are electrically connected to the low-resistance regions; and electrode layers are provided to be in contact with the low-resistance regions, below regions where the wiring layers are formed.
摘要翻译：提供一种半导体器件，其中提供氧化物半导体层; 设置有栅极电极层的一对布线层电连接到低电阻区域; 并且电极层设置成与低电阻区域接触，在形成布线层的区域之下。

7. 发明申请

US20130062607A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20130062607A1
公开(公告)日：2013-03-14
申请号：US13604669
申请日：2012-09-06
申请人： Shunpei YAMAZAKI , Jun Koyama
发明人： Shunpei YAMAZAKI , Jun Koyama
IPC分类号： H01L29/786
CPC分类号： H01L27/1225 , H01L27/0266
摘要： A protection circuit for efficiently reducing the influence of ESD and a semiconductor device in which the influence of ESD is efficiently reduced are provided. The protection circuit includes at least two protection diodes. Each protection diode is a transistor including two gates facing each other with a semiconductor layer in which a channel is formed sandwiched between the gates. A fixed potential is applied to one of the gates of the transistor.
摘要翻译：提供了用于有效降低ESD的影响的保护电路和其中有效降低ESD的影响的半导体器件。保护电路包括至少两个保护二极管。每个保护二极管是包括两个彼此面对的栅极的晶体管，半导体层中形成夹在栅极之间的沟道。固定电位施加到晶体管的一个栅极。

8. 发明申请

US20130009209A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20130009209A1
公开(公告)日：2013-01-10
申请号：US13535506
申请日：2012-06-28
申请人： Shunpei YAMAZAKI
发明人： Shunpei YAMAZAKI
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/7782 , H01L29/78603 , H01L29/78696
摘要： To provide a transistor including an oxide semiconductor layer and having electric characteristics required depending on an intended use and provide a semiconductor device including the transistor, in a transistor in which a semiconductor layer, source and drain electrode layers, a gate insulating film, and a gate electrode are stacked in this order over an oxide semiconductor insulating film, an oxide semiconductor stack layer which includes at least two oxide semiconductor layers with energy gaps different from each other and a mixed region therebetween is used as the semiconductor layer.
摘要翻译：为了提供一种包括氧化物半导体层并且具有根据预期用途需要的电特性的晶体管，并且在包括半导体层，源极和漏极电极层，栅极绝缘膜和栅电极依次堆叠在氧化物半导体绝缘膜上，氧化物半导体堆叠层，其包括具有彼此不同的能隙的至少两个氧化物半导体层以及它们之间的混合区域作为半导体层。

9. 发明申请

US20130001583A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF 有权
公开(公告)号：US20130001583A1
公开(公告)日：2013-01-03
申请号：US13609906
申请日：2012-09-11
申请人： Shunpei YAMAZAKI , Satoshi MURAKAMI , Jun KOYAMA , Yukio TANAKA , Hidehito KITAKADO , Hideto OHNUMA
发明人： Shunpei YAMAZAKI , Satoshi MURAKAMI , Jun KOYAMA , Yukio TANAKA , Hidehito KITAKADO , Hideto OHNUMA
IPC分类号： H01L29/786
CPC分类号： G02F1/1368 , G02F1/133345 , G02F1/13454 , G02F1/136227 , G02F1/136286 , G02F2201/123 , G02F2202/104 , H01L27/12 , H01L27/1222 , H01L27/124 , H01L27/1248 , H01L27/1259 , H01L27/3248 , H01L27/3258 , H01L27/3262 , H01L27/3272 , H01L27/3276 , H01L29/458 , H01L29/78621 , H01L29/78627 , H01L29/78675 , H01L2029/7863 , H01L2227/323
摘要： This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.

10. 发明申请

US20130001568A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130001568A1
公开(公告)日：2013-01-03
申请号：US13609915
申请日：2012-09-11
申请人： Shunpei YAMAZAKI , Satoshi MURAKAMI , Jun KOYAMA , Yukio TANAKA , Hidehito KITAKADO , Hideto OHNUMA
发明人： Shunpei YAMAZAKI , Satoshi MURAKAMI , Jun KOYAMA , Yukio TANAKA , Hidehito KITAKADO , Hideto OHNUMA
IPC分类号： H01L29/786
CPC分类号： G02F1/1368 , G02F1/133345 , G02F1/13454 , G02F1/136227 , G02F1/136286 , G02F2201/123 , G02F2202/104 , H01L27/12 , H01L27/1222 , H01L27/124 , H01L27/1248 , H01L27/1259 , H01L27/3248 , H01L27/3258 , H01L27/3262 , H01L27/3272 , H01L27/3276 , H01L29/458 , H01L29/78621 , H01L29/78627 , H01L29/78675 , H01L2029/7863 , H01L2227/323
摘要： This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.
摘要翻译：本发明提供一种具有高操作性能和高可靠性的半导体器件。在形成驱动电路的n沟道TFT 802中配置与栅极配线重叠的LDD区域707，能够实现高耐热载流子注入的TFT结构。不与栅极布线重叠的LDD区域717,718,719和720被布置在形成像素单元的n沟道TFT 804中。结果，实现了具有小的截止电流值的TFT结构。在这种情况下，属于周期表第15族的元素在LDD区707中比在LDD区717,718,719和720中的浓度更高。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式