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1. 发明授权

US4798167A Apparatus for preparing a photoelectromotive force member having a concentric triplicate conduit for generating active species and precursor 失效
标题翻译：用于制备具有用于产生活性物质和前体的同心三重管道的光电动势部件的装置
公开(公告)号：US4798167A
公开(公告)日：1989-01-17
申请号：US44778
申请日：1987-05-01
申请人： Shunichi Ishihara , Keishi Saito , Shunri Oda , Isamu Shimizu
发明人： Shunichi Ishihara , Keishi Saito , Shunri Oda , Isamu Shimizu
IPC分类号： H01L31/04 , H01L21/20 , H01L31/075 , H01L31/20 , C23C16/50
CPC分类号： H01L31/202 , H01L31/075 , Y02E10/548 , Y02P70/521 , Y10S148/169
摘要： An apparatus for the preparation of a photoelectric conversion layer for a photoelectromotive force member includes:(a) a film-forming chamber having an inner space in which a substrate holder for a substrate is provided;(b) an exhaust pipe connected to the film-forming chamber and through a main valve to an exhaust pump;(c) a concentric triplicate conduit connected through a nozzle to the film-forming chamber. The concentric triplicate conduit includes:(i) an outer passage for introducing a gaseous raw material and formed by a circumferential wall and an inner wall having a plurality of gas liberation holes;(ii) a middle passage for applying microwave energy to said raw material gas to generate an active species and having a mixing region at the downstream side before the nozzle means, and(iii) a central passage situated horizontally within said middle passage (ii) for introducing a gaseous precursor and for transporting the gaseous precursor toward the film-forming chamber and being open at its end positioned in the mixing region leaving a desired distance to the nozzle means; said middle passage (ii) being formed by the inner wall of the outer passage and a circumferential wall of the central psssage (iii).Also included are:(d) a feed pipe for introducing said raw material to said outer passage (i);(e) a microwave power source for generating said microwave energy; and(f) a feed pipe for introducing said gaseous precursor to said central passage (iii).
摘要翻译：一种用于制备光电动势部件的光电转换层的装置包括：（a）具有内部空间的成膜室，在该内部空间中设置有用于基板的基板保持器; （b）排气管，其连接到成膜室并通过主阀到排气泵; （c）通过喷嘴连接到成膜室的同心三重导管。同心三重管道包括：（i）用于引入气态原料并由圆周壁形成的外部通道和具有多个气体释放孔的内壁; （ii）用于向所述原料气体施加微波能量以产生活性物质并且在喷嘴装置之前的下游侧具有混合区域的中间通道，以及（iii）水平地位于所述中间通道（ii）内的中心通道，用于引入气态前体和用于将气态前驱体输送到成膜室，并且在其位于混合区域的端部处开口，留下到喷嘴装置的期望距离; 所述中间通道（ii）由所述外部通道的内壁和所述中央通道（iii）的周壁形成。还包括：（d）用于将所述原料引入所述外通道（i）的进料管; （e）用于产生所述微波能量的微波功率源; 和（f）用于将所述气态前体引入所述中心通道（iii）的进料管。

2. 发明授权

US4689093A Process for the preparation of photoelectromotive force member 失效
标题翻译：光电动力部件制备工艺
公开(公告)号：US4689093A
公开(公告)日：1987-08-25
申请号：US843304
申请日：1986-03-24
申请人： Shunichi Ishihara , Keishi Saito , Shunri Oda , Isamu Shimizu
发明人： Shunichi Ishihara , Keishi Saito , Shunri Oda , Isamu Shimizu
IPC分类号： H01L31/04 , H01L21/20 , H01L31/075 , H01L31/20 , H01L21/205 , H01L31/18
CPC分类号： H01L31/202 , H01L31/075 , Y02E10/548 , Y02P70/521 , Y10S148/169
摘要： Process for preparing a photoelectromotive force member by forming a photoelectric conversion layer on a substrate by: (a) generating an active species by the action of microwave energy on a substance in a space leading to a film forming space containing a substrate; (b) generating a precursor by the action of microwave energy on a substance in a space situated within the space for generating the active species; and (c) introducing the resulting active species and precursor into the film forming space to chemically react them and to form the photoelectric conversion layer.
摘要翻译：通过以下步骤在基板上形成光电转换层来制备光电动势部件的方法：（a）通过微波能量作用于通向包含基板的成膜空间的空间中的物质产生活性物质; （b）通过微波能量作用于产生活性物质的空间内的物质的物质产生前体; 和（c）将所得到的活性物质和前体引入成膜空间以使其发生化学反应并形成光电转换层。

3. 发明授权

US4803093A Process for preparing a functional deposited film 失效
标题翻译：制备功能沉积膜的方法
公开(公告)号：US4803093A
公开(公告)日：1989-02-07
申请号：US843236
申请日：1986-03-24
申请人： Shunichi Ishihara , Keishi Saito , Shunri Oda , Isamu Shimizu
发明人： Shunichi Ishihara , Keishi Saito , Shunri Oda , Isamu Shimizu
IPC分类号： C23C16/24 , C08J5/18 , C23C16/00 , C23C16/44 , C23C16/455 , H01L21/205 , H01L31/04 , B05D3/06
CPC分类号： H01L21/02422 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： Process for preparing a functional film deposited on a substrate having practically applicable characteristics which is usable as a photoconductive member in semiconductor device, image input line sensor, image pickup device on the like by generating an active species by subjecting a gaseous substance capable of being activated to generate said active species to the action of activating energy in an active species generating and transporting space leading to a film forming space containing the substrate;simultaneously generating a precursor by subjecting a gaseous substance capable of generating said precursor to the action of activating energy in a precursor generating and transporting space located separately from and within the active species generating and transporting space and open in a downstream region of that space; andintroducing the resulting active species and precursor into the film forming space to chemically react to form the functional deposited film on the substrate in the absence of plasma.
摘要翻译：用于制备沉积在基板上的功能膜的方法，其具有可用作半导体器件中的感光体的实际应用特性，图像输入线传感器，图像拾取装置等，通过使能够活化的气态物质产生活性物质以产生所述活性物质以产生和传输空间的活化能的作用，所述活性物质通向含有所述基底的成膜空间; 通过使能够产生所述前体的气态物质在产生和传输空间的活化物质生成和传输空间内的前体产生和传输空间中活化能量的作用同时产生前体，并在该空间的下游区域中开放; 并将所得活性物质和前体引入成膜空间中以在不存在等离子体的情况下在基板上形成功能性沉积膜。

4. 发明授权

US4702934A Electrophotographic photosensitive member, process and apparatus for the preparation thereof 失效
标题翻译：电子照相感光构件，其制备方法和装置
公开(公告)号：US4702934A
公开(公告)日：1987-10-27
申请号：US843277
申请日：1986-03-24
申请人： Shunichi Ishihara , Keishi Saito , Shunri Oda , Isamu Shimizu
发明人： Shunichi Ishihara , Keishi Saito , Shunri Oda , Isamu Shimizu
IPC分类号： G03B27/62 , G03G15/00 , G03G15/01 , G03G15/04 , G03G15/043 , G03G15/36 , G03G21/00 , B05D3/06
CPC分类号： G03G5/0433 , G03G5/04 , G03G2215/00957
摘要： A process and an apparatus for preparing an electrophotographic photosensitive member with the use of an active species and a precursor in the absence of a plasma.
摘要翻译：一种在没有等离子体的情况下使用活性物质和前体制备电子照相感光构件的方法和装置。

5. 发明申请

US20110098568A1 IMAGE FORMING METHOD USING ULTRASOUND AND ABERRATION CORRECTION METHOD 有权
标题翻译：使用超声和去噪校正方法的图像形成方法
公开(公告)号：US20110098568A1
公开(公告)日：2011-04-28
申请号：US12937535
申请日：2009-04-03
申请人： Yasuhiro Someda , Kenichi Nagae , Katsuya Oikawa , Keishi Saito , Yasuyoshi Takai , Hirofumi Taki , Toru Sato
发明人： Yasuhiro Someda , Kenichi Nagae , Katsuya Oikawa , Keishi Saito , Yasuyoshi Takai , Hirofumi Taki , Toru Sato
IPC分类号： A61B8/14
CPC分类号： G01S7/52049 , G01S15/8952
摘要： An ultrasound image forming method comprises a first step of receiving a first signal reflected from the object, a second step of obtaining an aberration correction value based on the first signal thus received, a third step of receiving a second signal reflected from the object when a second ultrasound corrected based on the aberration correction value is transmitted to the object, and a fourth step of forming an image from the aberration correction value and the second signal. The center frequency of the second ultrasound is between 0.5 MHz and 20 MHz, the center frequency of the first ultrasound is between 3/16 and 9/20 of the center frequency of the second ultrasound. By this method, an accurate aberration correction value can be obtained and an ultrasound imaging with high resolution can be achieved even if aberrations are large and difficult to correct.
摘要翻译：超声波图像形成方法包括：接收从对象反射的第一信号的第一步骤，基于如此接收的第一信号获得像差校正值的第二步骤;接收从物体反射的第二信号的第三步骤，当第基于像差校正值校正的第二超声波被发送到物体，以及第四步骤，根据像差校正值和第二信号形成图像。第二超声的中心频率在0.5MHz和20MHz之间，第一超声的中心频率在第二超声的中心频率的3/16和9/20之间。通过该方法，可以获得精确的像差校正值，即使像差大，难以校正也能够实现高分辨率的超声波成像。

6. 发明授权

US07700165B2 Method of forming deposited film and method of forming photovoltaic element 失效
标题翻译：形成沉积膜的方法和形成光伏元件的方法
公开(公告)号：US07700165B2
公开(公告)日：2010-04-20
申请号：US11627066
申请日：2007-01-25
申请人： Yasuyoshi Takai , Masafumi Sano , Keishi Saito
发明人： Yasuyoshi Takai , Masafumi Sano , Keishi Saito
IPC分类号： H05H1/24
CPC分类号： C23C16/24 , C23C16/45523 , C23C16/545 , Y02E10/545 , Y02E10/548
摘要： Provided is a deposited film containing microcrystalline silicon by plasma CVD, which includes changing at least one of conditions selected from a high frequency power density, a bias voltage with respect to an interelectrode distance, a bias current with respect to an electrode area, a high frequency power with respect to a source gas flow rate, a ratio of a diluting gas flow rate to a source gas flow rate, a substrate temperature, a pressure, and an interelectrode distance, between conditions for forming a deposited film of a microcrystalline region and conditions for forming a deposited film of an amorphous region; and forming a deposited film under conditions within a predetermined range in the vicinity of boundary conditions under which the crystal system of the deposited film substantially changes between a amorphous state and a microcrystalline state.
摘要翻译：提供了通过等离子体CVD包含微晶硅的沉积膜，其包括改变选自高频功率密度，相对于电极间距离的偏置电压，相对于电极面积的偏置电流，高电平用于形成微晶区域的沉积膜的条件和相对于源气体流量的稀释气体流量的比率，稀释气体流量与源气体流量的比率，基板温度，压力和电极间距离形成非晶区沉积膜的条件; 以及在沉积膜的晶体系统在非晶态和微晶态之间基本上变化的边界条件附近的预定范围内的条件下形成沉积膜。

7. 发明申请

US20090146072A1 SENSOR AND IMAGE PICKUP DEVICE 有权
标题翻译：传感器和图像拾取器件
公开(公告)号：US20090146072A1
公开(公告)日：2009-06-11
申请号：US12368592
申请日：2009-02-10
申请人： Keishi Saito , Hideo Hosono , Toshio Kamiya , Kenji Nomura
发明人： Keishi Saito , Hideo Hosono , Toshio Kamiya , Kenji Nomura
IPC分类号： G01T1/24
CPC分类号： H01L31/032 , H01L27/14601 , H01L27/14632 , H01L27/14658 , H01L29/7869 , H01L31/02322 , H01L31/085 , H01L31/09 , H01L31/118
摘要： A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.
摘要翻译：一种用于检测接收的电磁波的传感器，包括插在第一电极和第二电极之间的第一电极，第二电极和无定形氧化物层。

8. 发明授权

US07453065B2 Sensor and image pickup device 有权
标题翻译：传感器和图像拾取装置
公开(公告)号：US07453065B2
公开(公告)日：2008-11-18
申请号：US11269648
申请日：2005-11-09
申请人： Keishi Saito , Hideo Hosono , Toshio Kamiya , Kenji Nomura
发明人： Keishi Saito , Hideo Hosono , Toshio Kamiya , Kenji Nomura
IPC分类号： G01J5/20
CPC分类号： H01L31/032 , H01L27/14601 , H01L27/14632 , H01L27/14658 , H01L29/7869 , H01L31/02322 , H01L31/085 , H01L31/09 , H01L31/118
摘要： A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.
摘要翻译：一种用于检测接收的电磁波的传感器，包括插在第一电极和第二电极之间的第一电极，第二电极和无定形氧化物层。

9. 发明授权

US06483021B2 Stacked photovoltaic element 有权
标题翻译：堆叠光电元件
公开(公告)号：US06483021B2
公开(公告)日：2002-11-19
申请号：US09257259
申请日：1999-02-25
申请人： Keishi Saito
发明人： Keishi Saito
IPC分类号： H01L3100
CPC分类号： H01L31/03685 , H01L31/03687 , H01L31/076 , H01L31/206 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： The present invention provides a stacked photovoltaic element formed by stacking, on a substrate, at least a pin junction constituent element having a microcrystalline semiconductor in an i-type semiconductor layer and a pin junction constituent element having an amorphous semiconductor in an i-type semiconductor layer, wherein a current is controlled by the pin junction constituent element having the microcrystalline semiconductor in the i-type semiconductor layer, thereby obtaining a stacked photovoltaic element with a high photoelectric conversion efficiency and a reduced variation in the photoelectric conversion efficiency for a long light irradiation time.
摘要翻译：本发明提供一种层叠的光电元件，其通过在i型半导体中在至少具有微晶半导体的i型半导体层中的至少一个pin结构成元件和具有非晶半导体的pin结构成元件层，其中电流由在i型半导体层中具有微晶半导体的pin结构成元件控制，从而获得具有高光电转换效率的叠层光伏元件和对于长光的光电转换效率的变化减小照射时间。

10. 发明授权

US5456762A Photoelectric conversion elements 失效
标题翻译：光电转换元件
公开(公告)号：US5456762A
公开(公告)日：1995-10-10
申请号：US171430
申请日：1993-12-22
申请人： Toshimitsu Kariya , Keishi Saito
发明人： Toshimitsu Kariya , Keishi Saito
IPC分类号： H01L27/00 , H01L31/036 , H01L31/04 , H01L31/052 , H01L31/075 , H01L31/10 , H01L31/105 , H01L31/18 , H01L31/20 , H01L31/0368 , H01L31/0376
CPC分类号： H01L31/076 , H01L31/036 , H01L31/056 , H01L31/075 , H01L31/1055 , H01L31/1812 , H01L31/202 , H01L31/206 , Y02E10/52 , Y02E10/548 , Y02P70/521
摘要： The present invention provides photoelectric conversion elements, wherein the long wavelength sensitivity, the fill factor, and the photoelectric conversion efficiency are improved. In order to provide photoelectric conversion elements wherein light deterioration is reduced, the field durability enhanced, and the temperature characteristic improved, a p-layer composed of amorphous silicon type semiconductor containing hydrogen, an i-layer composed of amorphous silicon-germanium type semiconductor containing hydrogen and further including microcrystalline germanium, and an n-layer composed of amorphous silicon type semiconductor containing hydrogen are laminated on a substrate, the i-layer being formed at a substrate temperature from 400.degree. to 600.degree. C. by microwave plasma CVD, the particle diameter of said microcrystalline germanium ranging from 50 to 500 angstroms. Also, the content of microcrystalline germanium varies in the layer thickness direction.
摘要翻译：本发明提供光电转换元件，其中提高了长波长灵敏度，填充因子和光电转换效率。为了提供光劣化降低的光电转换元件，提高了场耐久性，提高了温度特性，由含有氢的非晶硅型半导体构成的p层，由含有氢的非晶硅锗型半导体构成的i层氢并且还包括微晶锗，并且由含有氢的非晶硅型半导体构成的n层层叠在基板上，所述i层通过微波等离子体CVD在400〜600℃的基板温度下形成，所述微晶锗的粒径为50-500埃。此外，微晶锗的含量在层厚度方向上变化。

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