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1. 发明申请

US20060269390A1 Susceptor for MOCVD reactor 有权
公开(公告)号：US20060269390A1
公开(公告)日：2006-11-30
申请号：US11483387
申请日：2006-07-06
申请人： Shuji Nakamura , Steven DenBaars , Max Batres , Michael Coulter
发明人： Shuji Nakamura , Steven DenBaars , Max Batres , Michael Coulter
IPC分类号： B65G49/07
CPC分类号： H01L21/67103 , H01L21/68771
摘要： A susceptor for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers is disclosed. The susceptor comprises a base structure made of a material having low thermal conductivity at high temperature, and has one or more plate holes to house heat transfer plugs. The plugs are made of a material with high thermal conductivity at high temperatures to transfer heat to the semiconductor wafers. A metalorganic organic chemical vapor deposition reactor is also disclosed utilizing a susceptor according to the present invention.

2. 发明授权

US08372204B2 Susceptor for MOCVD reactor 有权
标题翻译： MOCVD反应器的受体
公开(公告)号：US08372204B2
公开(公告)日：2013-02-12
申请号：US11483387
申请日：2006-07-06
申请人： Shuji Nakamura , Steven DenBaars , Max Batres , Michael Coulter
发明人： Shuji Nakamura , Steven DenBaars , Max Batres , Michael Coulter
IPC分类号： H01L21/00 , C23C14/00 , C23C16/00
CPC分类号： H01L21/67103 , H01L21/68771
摘要： A susceptor for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers is disclosed. The susceptor comprises a base structure made of a material having low thermal conductivity at high temperature, and has one or more plate holes to house heat transfer plugs. The plugs are made of a material with high thermal conductivity at high temperatures to transfer heat to the semiconductor wafers. A metalorganic chemical vapor deposition reactor is also disclosed utilizing a susceptor according to the present invention.
摘要翻译：公开了一种用于在晶片上的外延层生长期间将半导体晶片保持在MOCVD反应器中的基座。感受体包括由在高温下具有低导热性的材料制成的基座结构，并且具有一个或多个用于容纳传热塞的板孔。插头由高温下具有高导热性的材料制成，以将热量传递到半导体晶片。还公开了一种利用根据本发明的基座的金属有机化学气相沉积反应器。

3. 发明授权

US08366830B2 Susceptor apparatus for inverted type MOCVD reactor 有权
标题翻译：反型MOCVD反应器的受体装置
公开(公告)号：US08366830B2
公开(公告)日：2013-02-05
申请号：US10382198
申请日：2003-03-04
申请人： Shuji Nakamura , Steven DenBaars , Max Batres , Michael Coulter
发明人： Shuji Nakamura , Steven DenBaars , Max Batres , Michael Coulter
IPC分类号： H01L21/00 , C23C14/00 , C23C16/00
CPC分类号： C23C16/4584 , C23C16/4581 , C23C16/46 , C30B25/10 , C30B25/12
摘要： The present invention discloses a susceptor mounting assembly for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers, that is particularly adapted for mounting a susceptor in an inverted type reactor chamber. It includes a tower having an upper and lower end with the upper end mounted to the top inside surface of the reactor chamber and a susceptor is arranged at the tower's lower end. Semiconductor wafers are held adjacent to the susceptor such that heat from the susceptor passes into wafers. A second embodiment of a susceptor mounting assembly according to the invention also comprises a tower having an upper and lower end. The tower's upper end is mounted to the top inside surface of the reactor chamber. A susceptor is housed within a cup and the cup is mounted to the tower's lower end.
摘要翻译：本发明公开了一种用于在晶圆上生长外延层期间将半导体晶片保持在MOCVD反应器中的基座安装组件，其特别适用于将基座安装在倒置型反应室中。它包括具有上端和下端的塔，其上端安装到反应室的顶部内表面，并且基座设置在塔的下端。半导体晶片被保持在基座附近，使得来自基座的热量进入晶片。根据本发明的基座安装组件的第二实施例还包括具有上端和下端的塔。塔的上端安装在反应室的顶部内表面。托架被容纳在一个杯子内，杯子安装在塔的下端。

4. 发明授权

US08133322B2 Apparatus for inverted multi-wafer MOCVD fabrication 有权
标题翻译：倒装多晶圆MOCVD制造装置
公开(公告)号：US08133322B2
公开(公告)日：2012-03-13
申请号：US10256814
申请日：2002-09-27
申请人： Shuji Nakamura , Steven DenBaars , Max Batres , Michael Coulter
发明人： Shuji Nakamura , Steven DenBaars , Max Batres , Michael Coulter
IPC分类号： C23C16/455 , C23C16/458 , C23C16/46 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45502 , C23C16/4584 , C30B25/10 , C30B25/14
摘要： A semiconductor fabrication reactor according to the invention comprises a rotatable susceptor mounted to the top of a reactor chamber. One or more wafers are mounted to a surface of the susceptor and the rotation of the susceptor causes the wafers to rotate within the chamber. A heater heats the susceptor and a chamber gas inlet allows semiconductor growth gasses into the reactor chamber to deposit semiconductor material on said wafers. A chamber gas outlet is included to allow growth gasses to exit the chamber. In a preferred embodiment, the inlet is at or below the level of said wafers and the outlet is preferably at or above the level of the wafers. A semiconductor fabrication system according to the invention comprises a source of gasses for forming epitaxial layers on wafers and a source of gasses for dopants in said epitaxial layers. A gas line carries the dopant and epitaxial source gasses to a reactor for growing semiconductor devices on wafers, and the source gasses in the gas line are injected into the reactor chamber through a reactor inlet. The reactor comprises an inverted susceptor mounted in a reactor chamber that is capable of rotating. One or more wafers are mounted to a surface of the susceptor, the rotation of the susceptor causing the wafers to rotate within the chamber. A heater heats the susceptor and the source gasses deposit semiconductor material on the wafers.
摘要翻译：根据本发明的半导体制造反应器包括安装到反应器室的顶部的可旋转基座。将一个或多个晶片安装到基座的表面，并且基座的旋转导致晶片在腔室内旋转。加热器加热基座，腔室气体入口允许半导体生长气体进入反应器室以将半导体材料沉积在所述晶片上。包括室气体出口以允许生长气体离开室。在优选实施例中，入口处于或低于所述晶片的水平面，并且出口优选地处于或高于晶片的水平面。根据本发明的半导体制造系统包括用于在晶片上形成外延层的气体源和用于所述外延层中的掺杂剂的气体源。气体管线将掺杂剂和外延源气体输送到用于在晶片上生长半导体器件的反应器，并且气体管线中的源气体通过反应器入口注入反应器室。反应器包括安装在能够旋转的反应器室中的反转基座。一个或多个晶片被安装到基座的表面，基座的旋转导致晶片在腔室内旋转。加热器加热基座和源气体将半导体材料沉积在晶片上。

5. 发明授权

US07122844B2 Susceptor for MOCVD reactor 有权
公开(公告)号：US07122844B2
公开(公告)日：2006-10-17
申请号：US10144943
申请日：2002-05-13
申请人： Shuji Nakamura , Steven DenBaars , Max Batres , Michael Coulter
发明人： Shuji Nakamura , Steven DenBaars , Max Batres , Michael Coulter
IPC分类号： H01L33/00 , H01L31/00
CPC分类号： H01L21/67103 , H01L21/68771
摘要： A susceptor for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers is disclosed. The susceptor comprises a base structure made of a material having low thermal conductivity at high temperature, and has one or more plate holes to house heat transfer plugs. The plugs are made of a material with high thermal conductivity at high temperatures to transfer heat to the semiconductor wafers. A metalorganic organic chemical vapor deposition reactor is also disclosed utilizing a susceptor according to the present invention.

6. 发明申请

US20070252164A1 METHOD FOR GROWTH OF SEMIPOLAR (Al,In,Ga,B)N OPTOELECTRONIC DEVICES 有权
标题翻译：用于生长半导体（Al，In，Ga，B）N光电器件的方法
公开(公告)号：US20070252164A1
公开(公告)日：2007-11-01
申请号：US11676999
申请日：2007-02-20
申请人： Hong Zhong , John Kaeding , Rajat Sharma , James Speck , Steven DenBaars , Shuji Nakamura
发明人： Hong Zhong , John Kaeding , Rajat Sharma , James Speck , Steven DenBaars , Shuji Nakamura
IPC分类号： H01L33/00 , H01L21/00 , H01L29/06
CPC分类号： H01L31/0236 , C30B25/186 , C30B29/403 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02647 , H01L21/02658 , H01L29/2003 , H01L29/778 , H01L31/18 , H01L33/0075 , Y02E10/50
摘要： A method of fabricating an optoelectronic device, comprising growing an active layer of the device on an oblique surface of a suitable material, wherein the oblique surface comprises a facetted surface. The present invention also discloses a method of fabricating the facetted surfaces. One fabrication process comprises growing an epitaxial layer on a suitable material, etching the epitaxial layer through a mask to form the facets having a specific crystal orientation, and depositing one or more active layers on the facets. Another method comprises growing a layer of material using a lateral overgrowth technique to produce a facetted surface, and depositing one or more active layers on the facetted surfaces. The facetted surfaces are typically semipolar planes.
摘要翻译：一种制造光电器件的方法，包括在合适材料的倾斜表面上生长所述器件的有源层，其中所述倾斜表面包括刻面。本发明还公开了一种制造分面表面的方法。一个制造工艺包括在合适的材料上生长外延层，通过掩模蚀刻外延层以形成具有特定晶体取向的刻面，以及在该刻面上沉积一个或多个活性层。另一种方法包括使用横向过度生长技术生长材料层以产生刻面，以及在刻面上沉积一个或多个活性层。分面表面通常是半极性平面。

7. 发明申请

US20070126023A1 GROWTH OF REDUCED DISLOCATION DENSITY NON-POLAR GALLIUM NITRIDE 有权
标题翻译：减少偏差密度非极性氮化钠的生长
公开(公告)号：US20070126023A1
公开(公告)日：2007-06-07
申请号：US11670332
申请日：2007-02-01
申请人： Benjamin Haskell , Michael Craven , Paul Fini , Steven DenBaars , James Speck , Shuji Nakamura
发明人： Benjamin Haskell , Michael Craven , Paul Fini , Steven DenBaars , James Speck , Shuji Nakamura
IPC分类号： H01L33/00
CPC分类号： C30B29/406 , C30B25/02 , C30B29/403 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： Lateral epitaxial overgrowth (LEO) of non-polar gallium nitride (GaN) films results in significantly reduced defect density.
摘要翻译：非极性氮化镓（GaN）膜的横向外延生长（LEO）导致显着降低的缺陷密度。

8. 发明申请

US20060008941A1 Growth of planar, non-polar a-plane gallium nitride by hydride vapor phase epitaxy 有权
标题翻译：通过氢化物气相外延生长平面，非极性a面平面氮化镓
公开(公告)号：US20060008941A1
公开(公告)日：2006-01-12
申请号：US10537385
申请日：2003-07-15
申请人： Benjamin Haskell , Paul Fini , Shigemasa Matsuda , Michael Craven , Steven DenBaars , James Speck , Shuji Nakamura
发明人： Benjamin Haskell , Paul Fini , Shigemasa Matsuda , Michael Craven , Steven DenBaars , James Speck , Shuji Nakamura
IPC分类号： H01L21/00
CPC分类号： C30B25/02 , C30B29/40 , C30B29/406 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02587 , H01L21/02609 , H01L21/0262
摘要： Highly planar non-polar a-plane GaN films are grown by hydride vapor phase epitaxy (HVPE). The resulting films are suitable for subsequent device regrowth by a variety of growth techniques
摘要翻译：通过氢化物气相外延（HVPE）生长高平面非极性a面GaN膜。所得到的膜适合于通过各种生长技术的后续装置再生长

9. 发明申请

US20050245095A1 Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy 有权
标题翻译：通过氢化物气相外延生长平面缩小位错密度m面氮化镓
公开(公告)号：US20050245095A1
公开(公告)日：2005-11-03
申请号：US11140893
申请日：2005-05-31
申请人： Benjamin Haskell , Melvin McLaurin , Steven DenBaars , James Speck , Shuji Nakamura
发明人： Benjamin Haskell , Melvin McLaurin , Steven DenBaars , James Speck , Shuji Nakamura
IPC分类号： C30B25/02 , C30B29/40 , H01L21/00 , H01L21/20 , H01L21/205 , H01L21/31 , H01L21/469
CPC分类号： C30B25/02 , C30B29/40 , C30B29/406 , H01L21/02378 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L21/02647
摘要： A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. High quality, uniform, thick m-plane GaN films are produced for use as substrates for polarization-free device growth.
摘要翻译：生长高度平面，完全透明和镜面的m面氮化镓（GaN）膜的方法。该方法通过侧向过度生长技术显着降低结构缺陷密度。制造高品质，均匀，厚的m面GaN膜用作无极化器件生长的衬底。

10. 发明授权

US07825006B2 Lift-off process for GaN films formed on SiC substrates and devices fabricated using the method 有权
标题翻译：在SiC衬底上形成的GaN膜的剥离工艺和使用该方法制造的器件
公开(公告)号：US07825006B2
公开(公告)日：2010-11-02
申请号：US10841016
申请日：2004-05-06
申请人： Shuji Nakamura , Steven DenBaars
发明人： Shuji Nakamura , Steven DenBaars
IPC分类号： H01L21/30 , H01L21/00
CPC分类号： H01L33/465 , H01L33/0079 , H01L33/105
摘要： One embodiment of a method according to the present invention for fabricating a high light extraction photonic device comprises growing a lift-off layer on a substrate and growing an epitaxial semiconductor device structure on the lift-off layer such that the lift-off layer is sandwiched between said device structure and substrate. The epitaxial semiconductor structure comprises an emitter adapted to emit light in response to a bias. The device structure, lift-off layer and substrate is flip-chip mounted on a submount such that the epitaxial semiconductor device structure is sandwiched between the submount and lift-off layer. The lift-off layer is removed to separate the substrate from the device structure. Different removal methods can be used such as removal by a photo electrochemical etch or by illuminating the lift-off layer with laser light.
摘要翻译：根据本发明的用于制造高光提取光子器件的方法的一个实施例包括在衬底上生长剥离层并在剥离层上生长外延半导体器件结构，使得剥离层夹在在所述器件结构和衬底之间。外延半导体结构包括适于响应于偏压而发光的发射极。器件结构，剥离层和衬底被倒装安装在基座上，使得外延半导体器件结构夹在子安装座和剥离层之间。去除剥离层以将衬底与器件结构分离。可以使用不同的去除方法，例如通过光电化学蚀刻去除或通过用激光照射剥离层。

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