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1. 发明授权

US06187506B1 Antireflective coating for photoresist compositions 有权
标题翻译：用于光致抗蚀剂组合物的抗反射涂层
公开(公告)号：US06187506B1
公开(公告)日：2001-02-13
申请号：US09368740
申请日：1999-08-05
申请人： Shuji Ding , Dinesh N. Khanna , Mark A. Spak , Dana L. Durham , Jianhui Shan , Eleazer Gonzalez
发明人： Shuji Ding , Dinesh N. Khanna , Mark A. Spak , Dana L. Durham , Jianhui Shan , Eleazer Gonzalez
IPC分类号： G03C500
CPC分类号： G03F7/091
摘要： The present invention relates to a novel antireflective coating solution and a process for its use in photolithography. The antireflective coating solution comprises a novel polymer and an organic solvent or mixture of solvents, where the novel polymer comprises a unit containing a dye that absorbs from about 180 nm to about 450 nm and does not contain a crosslinking group.
摘要翻译：本发明涉及一种新颖的抗反射涂层溶液及其在光刻中的应用。抗反射涂层溶液包含新型聚合物和有机溶剂或溶剂混合物，其中新型聚合物包含含有吸收约180nm至约450nm并且不含交联基团的染料的单元。

2. 发明授权

US5217840A Image reversal negative working o-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment and element produced therefrom 失效
标题翻译：图像反转负性邻醌二叠氮化物和含光致抗蚀剂工艺的交联化合物具有热固化处理和由其制成的元素
公开(公告)号：US5217840A
公开(公告)日：1993-06-08
申请号：US530545
申请日：1990-05-25
申请人： Mark A. Spak , Donald Mammato , Dana Durham , Sangya Jain
发明人： Mark A. Spak , Donald Mammato , Dana Durham , Sangya Jain
IPC分类号： G03F7/022 , G03F7/38
CPC分类号： G03F7/0226 , G03F7/38 , Y10S430/143 , Y10S430/168
摘要： A process for converting a normally positive working photosensitive composition to a negative working composition. One forms a composition containing an alkali soluble resin, a 1,2 quinone diazide-4-sulfonyl compound and an acid catalyzed crosslinker in a solvent mixture. After drying and imagewise exposing, the composition is baked and developed to produce a negative image.
摘要翻译：将正常工作的感光性组合物转变成负极组合物的方法。一种在溶剂混合物中形成含有碱溶性树脂，1,2-醌二叠氮-4-磺酰基化合物和酸催化交联剂的组合物。干燥和成像曝光后，将组合物烘焙和显影以产生负像。

3. 发明授权

US5256522A Image reversal negative working O-naphthoquinone diazide and cross-linking compound containing photoresist process with thermal curing 失效
标题翻译：图像反转负性O-萘醌二叠氮化物和含光致抗蚀剂工艺的交联化合物与热固化
公开(公告)号：US5256522A
公开(公告)日：1993-10-26
申请号：US815645
申请日：1991-12-30
申请人： Mark A. Spak , Donald Mammato , Dana Durham , Sangya Jain
发明人： Mark A. Spak , Donald Mammato , Dana Durham , Sangya Jain
IPC分类号： G03F7/022 , G03F7/20 , G03F7/38 , G03F7/30
CPC分类号： G03F7/2022 , G03F7/0226 , G03F7/38 , Y10S430/143 , Y10S430/168
摘要： A process for converting a normally positive working photosensitive composition to a negative working composition is disclosed. One forms a composition containing an alkali soluble resin, a 1,2 quinone diazide-4-sulfonyl compound and an acid catalyzed crosslinker in a solvent mixture. After drying and imagewise exposing, the composition is baked and developed to produce a negative image. The image-reversal negative-working photoresists of this invention have superior storage stability and shelf life.
摘要翻译：公开了将正常正性感光性组合物转变为负性组合物的方法。一种在溶剂混合物中形成含有碱溶性树脂，1,2-醌二叠氮-4-磺酰基化合物和酸催化交联剂的组合物。干燥和成像曝光后，将组合物烘焙和显影以产生负像。本发明的图像反转负性光刻胶具有优异的储存稳定性和保质期。

4. 发明授权

US06372414B1 Lift-off process for patterning fine metal lines 有权
标题翻译：图案精细金属线的剥离工艺
公开(公告)号：US06372414B1
公开(公告)日：2002-04-16
申请号：US09268438
申请日：1999-03-12
申请人： Randy D. Redd , Ralph R. Dammel , John P. Sagan , Mark A. Spak
发明人： Randy D. Redd , Ralph R. Dammel , John P. Sagan , Mark A. Spak
IPC分类号： G03F726
CPC分类号： G03F7/322 , G03F7/168 , G03F7/38
摘要： The present invention relates to a process for providing a pattern on a substrate for use in a metal lift-off process, the process comprising: 1) coating a substrate with a liquid positive photoresist; 2) soft baking the coated substrate; 3) contacting the substrate with an aqueous alkaline developer containing from about 0.005 volume percent to about 0.05 volume percent of an alkylene glycol alkyl ether; 4) placing a patterned mask over the substrate; 5) exposing the substrate through the mask; 6) post exposure baking the substrate; 7) optionally, flood exposing the substrate; and 8) developing the substrate with an aqueous alkaline developer. The invention also relates to a novel developer solution of an ammonium hydroxide containing from about 0.005 volume percent to about 0.5 volume percent of an alkylene glycol alkyl ether and to a process for producing such a novel developer solution.
摘要翻译：本发明涉及在用于金属剥离工艺的基板上提供图案的方法，该方法包括：1）用液体正性光致抗蚀剂涂覆基材; 2）软化涂层基材; 3）使底物与含有约0.005体积％至约0.05体积％的亚烷基二醇烷基醚的含水碱性显影剂接触; 4）将图案化掩模放置在衬底上; 5）使基板通过掩模曝光; 6）曝光后烘烤基材; 7）任选地，泛化暴露基板; 和8）用含水碱性显影剂显影底物。本发明还涉及含有约0.005体积％至约0.5体积％的亚烷基二醇烷基醚的氢氧化铵的新显影剂溶液以及用于制备这种新型显影剂溶液的方法。

5. 发明授权

US5922503A Process for obtaining a lift-off imaging profile 失效
标题翻译：获取剥离成像轮廓的过程
公开(公告)号：US5922503A
公开(公告)日：1999-07-13
申请号：US802807
申请日：1997-02-18
申请人： Mark A. Spak , Ralph R. Dammel , Michael Deprado
发明人： Mark A. Spak , Ralph R. Dammel , Michael Deprado
IPC分类号： G03F7/022 , G03F7/039 , G03F7/09 , G03F7/26 , G03F7/38 , G03F7/40 , G11B7/24 , G03C1/492 , G03C5/00
CPC分类号： G03F7/405 , G03F7/094
摘要： A process for obtaining a lift-off imaging profile which comprises the steps of:a) providing a first layer of plasma etchable material wherein said material has a film thickness less than about 0.5 .mu.m (micrometer);b) providing a second layer comprising a photoimageable material on top of the first layer;c) forming a pattern in said second layer which comprises the steps of selectively exposing and developing the second layer;d) reacting the second layer with an organosilicon material; ande) etching the first layer isotropically in an oxygen atmosphere.
摘要翻译：一种用于获得剥离成像轮廓的方法，包括以下步骤：a）提供第一层等离子体可蚀刻材料，其中所述材料具有小于约0.5μm（微米）的膜厚度; b）在第一层的顶部上提供包含可光成像材料的第二层; c）在所述第二层中形成图案，其包括选择性地暴露和显影所述第二层的步骤; d）使第二层与有机硅材料反应; 和e）在氧气氛中各向同性蚀刻第一层。

6. 发明授权

US5019488A Method of producing an image reversal negative photoresist having a photo-labile blocked imide 失效
标题翻译：制备具有光不稳定封闭酰亚胺的图像反转负性光致抗蚀剂的方法
公开(公告)号：US5019488A
公开(公告)日：1991-05-28
申请号：US517530
申请日：1990-04-24
申请人： Donald C. Mammato , Sangya Jain , Dana Durham , Mark A. Spak , Douglas A. Usifer , Michael McFarland
发明人： Donald C. Mammato , Sangya Jain , Dana Durham , Mark A. Spak , Douglas A. Usifer , Michael McFarland
IPC分类号： G03F7/039
CPC分类号： G03F7/039
摘要： A method for producing a negative image by coating a substrate with a photosensitive layer containing a blocked hydrophobic polymer capable of deblocking in the presence of an acid, and an oxime sulfonate ester or o-quinone-4-sulfonyl-containing diazide, then imagewise exposing, treating with a gaseous base, removing excess base, overall flood exposing, baking and developing with an aqueous alkaline solution.
摘要翻译：通过用含有在酸存在下能够解封的封闭的疏水性聚合物的感光层和肟磺酸酯或邻醌-4-磺酰基的重氮化物涂布基材来制造负像的方法，然后成像曝光用气态碱处理，除去过量的碱，总体暴露，用碱性水溶液烘烤和显影。

7. 发明授权

US5399456A Image reversal negative working photoresist containing O-quinone diazide and cross-linking compound 失效
标题翻译：图像反转负性光刻胶含有O-醌二叠氮化物和交联化合物
公开(公告)号：US5399456A
公开(公告)日：1995-03-21
申请号：US978099
申请日：1992-11-19
申请人： Mark A. Spak , Donald Mammato , Dana Durham , Sangya Jain
发明人： Mark A. Spak , Donald Mammato , Dana Durham , Sangya Jain
IPC分类号： G03F7/022 , G03F7/38 , G03F7/023
CPC分类号： G03F7/0226 , G03F7/38 , Y10S430/143 , Y10S430/168
摘要： A process for converting a normally positive working photosensitive composition to a negative working composition. One forms a composition containing an alkali soluble resin, a 1,2 quinone diazide-4-sulfonyl compound and an acid catalyzed crosslinker in a solvent mixture. After drying and imagewise exposing, the composition is baked and developed to produce a negative image.
摘要翻译：将正常工作的感光性组合物转变成负极组合物的方法。一种在溶剂混合物中形成含有碱溶性树脂，1,2-醌二叠氮-4-磺酰基化合物和酸催化交联剂的组合物。干燥和成像曝光后，将组合物烘焙和显影以产生负像。

8. 发明授权

US4885232A High temperature post exposure baking treatment for positive photoresist compositions 失效
标题翻译：用于正性光致抗蚀剂组合物的高温后曝光烘烤处理
公开(公告)号：US4885232A
公开(公告)日：1989-12-05
申请号：US921879
申请日：1986-10-17
申请人： Mark A. Spak
发明人： Mark A. Spak
IPC分类号： G03F7/16
CPC分类号： G03F7/168
摘要： The invention provides a method for producing a photographic element which comprises coating a substrate with a positive working photosensitive composition which composition comprises an aqueous alkali soluble resin, a quinone diazide photosensitizer and a solvent composition, heat treating said coated substrate at a temperature of from about 20.degree. C. to about 100.degree. C. until substantially all of said solvent composition is removed; imagewise exposing said photosensitive composition to actinic radiation; baking said coated substrate at a temperature of from about 120.degree. C. to about 160.degree. C. for from about 15 seconds to about 90 seconds; and removing the exposed non-image areas of said composition with a suitable developer.
摘要翻译：本发明提供了一种用于生产照相元件的方法，该方法包括用正性感光组合物涂覆基材，所述组合物包含碱性水溶性树脂，醌二叠氮类光敏剂和溶剂组合物，在约 20℃至约100℃，直到基本上所有的所述溶剂组合物被除去; 将所述光敏组合物成像曝光于光化辐射; 在约120℃至约160℃的温度下烘烤所述涂覆的基材约15秒至约90秒; 以及用合适的显影剂除去所述组合物的暴露的非图像区域。

9. 发明授权

US4220706A Etchant solution containing HF-HnO.sub.3 -H.sub.2 SO.sub.4 -H.sub.2 O.sub.2 失效
标题翻译：含有HF-HnO3-H2SO4-H2O2的蚀刻剂溶液用于蚀刻硅衬底上的Al-Ti-Cu或Ni接触冶金
公开(公告)号：US4220706A
公开(公告)日：1980-09-02
申请号：US904541
申请日：1978-05-10
申请人： Mark A. Spak
发明人： Mark A. Spak
IPC分类号： C23F1/18 , C23F1/20 , C23F1/26 , C23F1/28 , H01L21/28 , H01L21/3213 , H01L21/44 , H01L21/465 , H01L21/88
CPC分类号： H01L21/32134 , C23F1/18 , C23F1/20 , C23F1/26 , C23F1/28 , H01L21/28
摘要： An etchant solution for multilayered metal layers comprising an aqueous solution of from 0.5 to 50 percent by weight of nitric acid, from 0.03 to 1.0 percent by weight of hydrofluoric acid, from 0.05 to 0.5 percent by weight of hydrogen peroxide and from 0.1 to 1.0 percent by weight of sulphuric acid. The solution is compatible with photolithographic techniques and uniformly etches three or more metals.
摘要翻译：一种用于多层金属层的蚀刻剂溶液，其包含0.5至50重量％的硝酸，0.03至1.0重量％的氢氟酸，0.05至0.5重量％的过氧化氢和0.1至1.0重量％的水溶液，的硫酸。该溶液与光刻技术兼容，并均匀蚀刻三种或更多种金属。

10. 发明授权

US06852465B2 Photoresist composition for imaging thick films 有权
标题翻译：用于成像厚膜的光刻胶组合物
公开(公告)号：US06852465B2
公开(公告)日：2005-02-08
申请号：US10393925
申请日：2003-03-21
申请人： Ralph R. Dammel , Stephen Meyer , Mark A. Spak
发明人： Ralph R. Dammel , Stephen Meyer , Mark A. Spak
IPC分类号： G03F7/004 , G03F7/016 , G03F7/022 , G03F7/023 , G03F7/30
CPC分类号： G03F7/0226 , G03F7/0048 , G03F7/0166
摘要： The present invention relates to a light-sensitive photoresist composition especially useful for imaging thick films, comprising a film-forming alkali-soluble resin, a photoactive compound, and a surfactant at a level ranging from about 2000 ppm to about 14,000 ppm by weight of total photoresist. Preferably the photoresist film has a thickness greater than 20 microns. The invention further provides for a process for coating and imaging the light-sensitive composition of this invention.
摘要翻译：本发明涉及特别适用于成膜厚膜的光敏光致抗蚀剂组合物，其包含成膜碱溶性树脂，光活性化合物和表面活性剂，其含量范围为约2000ppm至约14,000ppm 全光刻胶。优选地，光致抗蚀剂膜具有大于20微米的厚度。本发明还提供了一种用于涂覆和成像本发明的感光组合物的方法。

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