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1. 发明申请

US20060220166A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20060220166A1
公开(公告)日：2006-10-05
申请号：US11395599
申请日：2006-03-30
申请人： Shuichi Kikuchi , Shigeaki Okawa , Kiyofumi Nakaya , Toshiyuki Takahashi
发明人： Shuichi Kikuchi , Shigeaki Okawa , Kiyofumi Nakaya , Toshiyuki Takahashi
IPC分类号： H01L29/861
CPC分类号： H01L29/872 , H01L29/866
摘要： In a semiconductor device of the present invention, a protection diode for protecting a device is formed on an epitaxial layer formed on a substrate. A Schottky barrier metal layer is formed on a surface of the epitaxial layer and a P-type diffusion layer is formed at a lower portion of an end portion of the Schottky barrier metal layer. Then, a P-type diffusion layer is formed to be connected to a P-type diffusion layer and is extended to a cathode region. A metal layer to which an anode electrode is applied is formed above the P-type diffusion layer, thereby making it possible to obtain a field plate effect. This structure reduces a large change in a curvature of a depletion layer, thereby improving a withstand voltage characteristic of the protection diode.
摘要翻译：在本发明的半导体器件中，在形成在基板上的外延层上形成用于保护器件的保护二极管。在外延层的表面上形成肖特基势垒金属层，在肖特基势垒金属层的端部的下部形成P型扩散层。然后，形成P型扩散层以连接到P型扩散层并延伸到阴极区。在P型扩散层的上方形成有施加了阳极电极的金属层，能够得到场板效应。这种结构减小了耗尽层的曲率的大的变化，从而提高了保护二极管的耐电压特性。

2. 发明授权

US07737523B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07737523B2
公开(公告)日：2010-06-15
申请号：US11395599
申请日：2006-03-30
申请人： Shuichi Kikuchi , Shigeaki Okawa , Kiyofumi Nakaya , Toshiyuki Takahashi
发明人： Shuichi Kikuchi , Shigeaki Okawa , Kiyofumi Nakaya , Toshiyuki Takahashi
IPC分类号： H01L29/93
CPC分类号： H01L29/872 , H01L29/866
摘要： In a semiconductor device of the present invention, a protection diode for protecting a device is formed on an epitaxial layer formed on a substrate. A Schottky barrier metal layer is formed on a surface of the epitaxial layer and a P-type diffusion layer is formed at a lower portion of an end portion of the Schottky barrier metal layer. Then, a P-type diffusion layer is formed to be connected to a P-type diffusion layer and is extended to a cathode region. A metal layer to which an anode electrode is applied is formed above the P-type diffusion layer, thereby making it possible to obtain a field plate effect. This structure reduces a large change in a curvature of a depletion layer, thereby improving a withstand voltage characteristic of the protection diode.
摘要翻译：在本发明的半导体器件中，在形成在基板上的外延层上形成用于保护器件的保护二极管。在外延层的表面上形成肖特基势垒金属层，在肖特基势垒金属层的端部的下部形成P型扩散层。然后，形成P型扩散层以连接到P型扩散层并延伸到阴极区。在P型扩散层的上方形成有施加了阳极电极的金属层，能够得到场板效应。这种结构减小了耗尽层的曲率的大的变化，从而提高了保护二极管的耐电压特性。

3. 发明申请

US20060244091A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20060244091A1
公开(公告)日：2006-11-02
申请号：US11395890
申请日：2006-03-30
申请人： Shuichi Kikuchi , Shigeaki Okawa , Kiyofumi Nakaya , Toshiyuki Takahashi
发明人： Shuichi Kikuchi , Shigeaki Okawa , Kiyofumi Nakaya , Toshiyuki Takahashi
IPC分类号： H01L31/07
CPC分类号： H01L29/872 , H01L27/0255 , H01L29/0692 , H01L29/8611 , H01L29/868
摘要： In a semiconductor device of the present invention, a protection diode for protecting a device is formed on an epitaxial layer formed on a substrate. A Schottky barrier metal layer is formed on a surface of the epitaxial layer and a P-type diffusion layer is formed at a lower portion of an end portion of the Schottky barrier metal layer. Then, P-type diffusion layers are formed in a floating state closer to a cathode region side than the P-type diffusion layer, and are capacitively coupled with a metal layer to which an anode potential is applied. This structure reduces a large change in a curvature of a depletion layer, thereby improving a withstand voltage characteristic of the protection diode.
摘要翻译：在本发明的半导体器件中，在形成在基板上的外延层上形成用于保护器件的保护二极管。在外延层的表面上形成肖特基势垒金属层，在肖特基势垒金属层的端部的下部形成P型扩散层。然后，P型扩散层形成为比P型扩散层更靠近阴极区域的浮置状态，并且与施加有阳极电位的金属层电容耦合。这种结构减小了耗尽层的曲率的大的变化，从而提高了保护二极管的耐电压特性。

4. 发明申请

US20060220099A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20060220099A1
公开(公告)日：2006-10-05
申请号：US11391166
申请日：2006-03-27
申请人： Shuichi Kikuchi , Shigeaki Okawa , Kiyofumi Nakaya , Toshiyuki Takahashi
发明人： Shuichi Kikuchi , Shigeaki Okawa , Kiyofumi Nakaya , Toshiyuki Takahashi
IPC分类号： H01L29/788
CPC分类号： H01L29/7816 , H01L29/0696 , H01L29/0878 , H01L29/402 , H01L29/404 , H01L29/41725 , H01L29/42368 , H01L29/456 , H01L2924/0002 , H01L2924/00
摘要： In a conventional semiconductor device, there has been a problem that, in a region where a wiring layer to which a high electric potential is applied traverses a top surface of an isolation region, the withstand voltage is deteriorated. In a semiconductor device of the present invention, an epitaxial layer is deposited on a substrate, and an LDMOSFET is formed in one region divided by an isolation region. In a region where a wiring layer connected to a drain electrode traverses a top surface of the isolation region, a conductive plate having a ground electric potential and another conductive plate in a floating state are formed under the wiring layer. With this structure, electric field is reduced in the vicinity of the isolation region under the wiring layer, whereby a withstand voltage of the LDMOSFET is increased.
摘要翻译：在现有的半导体装置中，存在如下问题：在施加高电位的布线层横越隔离区域的上表面的区域中，耐电压劣化。在本发明的半导体器件中，在衬底上沉积外延层，并且在由隔离区域划分的一个区域中形成LDMOSFET。在与漏电极连接的布线层穿过隔离区域的上表面的区域中，在布线层的下方形成具有接地电位的导电板和浮置状态的另一导电板。利用这种结构，在布线层下面的隔离区附近减小了电场，从而提高了LDMOSFET的耐受电压。

5. 发明授权

US07999333B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07999333B2
公开(公告)日：2011-08-16
申请号：US11391166
申请日：2006-03-27
申请人： Shuichi Kikuch , Shigeaki Okawa , Kiyofumi Nakaya , Toshiyuki Takahashi
发明人： Shuichi Kikuch , Shigeaki Okawa , Kiyofumi Nakaya , Toshiyuki Takahashi
IPC分类号： H01L29/76
CPC分类号： H01L29/7816 , H01L29/0696 , H01L29/0878 , H01L29/402 , H01L29/404 , H01L29/41725 , H01L29/42368 , H01L29/456 , H01L2924/0002 , H01L2924/00
摘要： In a conventional semiconductor device, there has been a problem that, in a region where a wiring layer to which a high electric potential is applied traverses a top surface of an isolation region, the withstand voltage is deteriorated. In a semiconductor device of the present invention, an epitaxial layer is deposited on a substrate, and an LDMOSFET is formed in one region divided by an isolation region. In a region where a wiring layer connected to a drain electrode traverses a top surface of the isolation region, a conductive plate having a ground electric potential and another conductive plate in a floating state are formed under the wiring layer. With this structure, electric field is reduced in the vicinity of the isolation region under the wiring layer, whereby a withstand voltage of the LDMOSFET is increased.
摘要翻译：在现有的半导体装置中，存在如下问题：在施加高电位的布线层横越隔离区域的上表面的区域中，耐电压劣化。在本发明的半导体器件中，在衬底上沉积外延层，并且在由隔离区域划分的一个区域中形成LDMOSFET。在与漏电极连接的布线层穿过隔离区域的上表面的区域中，在布线层的下方形成具有接地电位的导电板和浮置状态的另一导电板。利用这种结构，在布线层下面的隔离区附近减小了电场，从而提高了LDMOSFET的耐受电压。

6. 发明授权

US11089221B2 Lens driving device, camera module and camera-mounted device 有权
公开(公告)号：US11089221B2
公开(公告)日：2021-08-10
申请号：US15776166
申请日：2016-11-14
申请人： Shun Sasaki , Toshiyuki Takahashi , Satoshi Ajiki
发明人： Shun Sasaki , Toshiyuki Takahashi , Satoshi Ajiki
IPC分类号： H04N5/232 , G02B7/09 , G02B27/00 , H04N5/225
摘要： Provided are a lens driving device, a camera module and a camera-mounted device which can perform translational deviation correction in addition to angular deviation correction. The lens driving device is provided with: an image-capturing unit which captures a subject image formed by a lens unit; a driving unit for translational deviation correction which performs translational deviation correction by shaking the lens unit within a plane perpendicular to an optical axis, on the basis of a detection signal from a translational deviation detecting unit that detects a translational deviation; and a driving unit for angular deviation correction which performs angular deviation correction by integrally tilting the image-capturing unit and the driving unit for translational deviation correction, on the basis of a detection signal from an angular deviation detecting unit that detects an angular deviation.

7. 发明授权

US08997481B2 Reservoir tank and brake system using the reservoir tank 有权
标题翻译：储罐和制油系统采用储罐
公开(公告)号：US08997481B2
公开(公告)日：2015-04-07
申请号：US13119792
申请日：2009-09-16
申请人： Toshiyuki Takahashi
发明人： Toshiyuki Takahashi
IPC分类号： B60T11/22
CPC分类号： B60T11/22
摘要： In a reservoir tank (5) of the present invention, a hydraulic fluid movement deterring wall (26) is disposed integrally with an upper half body (9) and extending toward a radial direction center of a cylindrical upper half body neck section (24) on a curved portion at a boundary between an inner peripheral surface (24a) of the cylindrical upper half body neck section (24) and an inner surface (25a1) of a ceiling portion (25a) of an upper half body trunk section (25) or on the inner peripheral surface (24a) of the upper half body neck section (24). The movement of the hydraulic fluid frontward (toward a hydraulic fluid inlet (10)) in a hydraulic fluid storage chamber 13 at a time when the reservoir tank (5) is tilted frontward is controlled by this hydraulic fluid movement deterring wall (26).
摘要翻译：在本发明的储罐（5）中，液压流体运动阻止壁（26）与上半体（9）一体地设置并且朝向圆柱形上半体颈部（24）的径向中心延伸，在圆筒形上半身颈部（24）的内周面（24a）与上半身躯干部（25）的顶部（25a）的内表面（25a1）之间的边界处的弯曲部分上，或在上半体颈部（24）的内周面（24a）上。在液压流体移动阻止壁（26）中控制储存箱（5）向前倾斜时液压流体向前（朝向液压流体入口（10））的运动。

8. 发明授权

US08917897B2 Microphone 有权
标题翻译：麦克风
公开(公告)号：US08917897B2
公开(公告)日：2014-12-23
申请号：US13318248
申请日：2011-03-16
申请人： Yusuke Nakagawa , Yasuhiro Horimoto , Tadashi Inoue , Toshiyuki Takahashi
发明人： Yusuke Nakagawa , Yasuhiro Horimoto , Tadashi Inoue , Toshiyuki Takahashi
IPC分类号： H04R9/08 , H04R11/04 , H04R17/02 , H04R19/04 , H04R21/02 , H04R1/04 , H04R1/06
CPC分类号： H04R1/04 , H01L2224/16225 , H04R1/06 , H04R19/04
摘要： Provided is a microphone capable of reducing a plane area seen from above, and further increasing a capacity of a back chamber of an acoustic sensor. An interposer 52 is mounted on a top surface of a circuit board 43, and an acoustic sensor 51 is mounted on the top surface thereof. A signal processing circuit 53 is accommodated in a space 70 provided in the interposer 52, and mounted on the circuit board 43. The acoustic sensor 51 is connected to the circuit board 43 through a wiring structure provided in the interposer 52. The acoustic sensor 51, the interposer 52 and the like are covered by a cover 42 put on the top surface of the circuit board 43. In the cover 42, a sound introduction hole 48 is opened in a position opposed to the front chamber of the acoustic sensor 51. The interposer 52 is formed with a ventilation notch 71 for acoustically communicating a space below a diaphragm 56 of the acoustic sensor 51 with a space inside the cover 42 and outside the interposer 52.
摘要翻译：提供了能够减少从上方看到的平面区域并进一步增加声学传感器的后室的容量的麦克风。插入器52安装在电路板43的顶表面上，声传感器51安装在其顶表面上。信号处理电路53容纳在设置在插入器52中的空间70中，并且安装在电路板43上。声传感器51通过设置在插入器52中的布线结构连接到电路板43.声传感器51 插入器52等被放置在电路板43的上表面上的盖42覆盖。在盖42中，声音引入孔48在与声学传感器51的前室相对的位置打开。内插件52形成有通气凹口71，用于将声传感器51的隔膜56下方的空间与罩42内的空间和插入件52外部隔开。

9. 发明授权

US08917160B2 RFID module 有权
标题翻译： RFID模块
公开(公告)号：US08917160B2
公开(公告)日：2014-12-23
申请号：US13243586
申请日：2011-09-23
申请人： Takaaki Tsushima , Toshiyuki Takahashi , Toshihiko Takeda , Zenkichi Mihara
发明人： Takaaki Tsushima , Toshiyuki Takahashi , Toshihiko Takeda , Zenkichi Mihara
IPC分类号： H04Q5/22 , G06K19/07 , H04B5/00
CPC分类号： G06K19/0723 , G06K19/0726 , H04B5/0031 , H04B5/0081
摘要： An RFID module including an antenna element forming an RFID antenna; an RFID circuit block to which the antenna element is connected; and a first resonance frequency adjustment circuit having an element that includes a drain terminal connected to the antenna element, a gate terminal that is grounded, and a source terminal that is grounded, wherein a pull-up resistor is connected between the drain terminal and a power supply.
摘要翻译：一种RFID模块，包括形成RFID天线的天线元件; 连接天线元件的RFID电路块; 以及第一谐振频率调整电路，具有包括连接到天线元件的漏极端子的元件，接地的栅极端子和接地的源极端子，其中上拉电阻器连接在漏极端子与漏极端子之间电源。

10. 发明申请

US20140016415A1 PROGRAMMING METHOD TO TIGHTEN THRESHOLD VOLTAGE WIDTH WITH AVOIDING PROGRAM DISTURB 有权
标题翻译：使用避免程序干扰来调节阈值电压宽度的编程方法
公开(公告)号：US20140016415A1
公开(公告)日：2014-01-16
申请号：US13546553
申请日：2012-07-11
申请人： Teruhiko Kamei , Cuong Trinh , Atsushi Inoue , Toshiyuki Takahashi
发明人： Teruhiko Kamei , Cuong Trinh , Atsushi Inoue , Toshiyuki Takahashi
IPC分类号： G11C16/04
CPC分类号： G11C11/5628 , G11C16/3418 , G11C16/3427
摘要： A non-volatile storage system that performs a multi-stage programming process to program non-volatile storage to a set of data threshold voltage distributions. The multi-stage programming process includes performing a first stage of the multi-stage programming process to change threshold voltages of at least a subset of the non-volatile storage elements from an erased distribution to one or more intermediate distributions, performing an intermediate stage of the multi-stage programming process to change threshold voltages of at least some of the non-volatile storage elements to appropriate distributions of the data threshold voltage distributions, and performing a later stage of the multi-stage programming process, after performing the intermediate stage of the multi-stage programming process, to tighten only a subset of the data threshold voltage distributions.
摘要翻译：执行多级编程处理以将非易失性存储器编程为一组数据阈值电压分布的非易失性存储系统。多级编程过程包括执行多阶段编程过程的第一阶段，以将非易失性存储元件的至少一个子集的阈值电压从擦除分布改变到一个或多个中间分布，执行中间阶段所述多级编程处理将所述非易失性存储元件中的至少一些的阈值电压改变为所述数据阈值电压分布的适当分布，以及在执行所述多级编程过程的后期阶段之后，执行所述多级编程处理的中间级多级编程过程，仅收紧数据阈值电压分布的子集。

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