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    • 2. 发明申请
    • Multi-Junction Type Solar Cell Device
    • 多连接型太阳能电池装置
    • US20090272423A1
    • 2009-11-05
    • US12480513
    • 2009-06-08
    • Koichiro NIIRAHirofumi SENTAHideki HAKUMA
    • Koichiro NIIRAHirofumi SENTAHideki HAKUMA
    • H01L31/042H01L31/00
    • H01L31/022408H01L31/022425H01L31/076H01L31/1055Y02E10/548
    • In a photoelectric conversion device, in a contact between a p-type semiconductor 3a and an electrode 2, an n-type semiconductor 6 of a conductivity type opposite to that of the p-type semiconductor is provided between the p-type semiconductor 3a and the electrode 2. The existence of the n-type semiconductor 6 allows a recombination rate of photo-generated carriers excited by incident light to be effectively reduced, and allows a dark current component to be effectively prevented from being produced. Therefore, it is possible to improve photoelectric conversion efficiency as well as to stabilize characteristics. Further, a tunnel junction is realized by increasing the concentration of a doping element in at least one or preferably both of the p-type semiconductor 3a and the n-type semiconductor 6 in a region where they are in contact with each other, thereby keeping ohmic characteristics between the semiconductor and the electrode good.
    • 在光电转换装置中,在p型半导体3a和电极2之间的接触中,在p型半导体3a和p型半导体3a之间设置与p型半导体的导电类型相反的n型半导体6, 电极2.n型半导体6的存在允许有效地减少由入射光激发的光生载流子的复合速率,并且可以有效地防止产生暗电流分量。 因此,可以提高光电转换效率以及稳定特性。 此外,通过在彼此接触的区域中增加p型半导体3a和n型半导体6中的至少一个或优选两者中的掺杂元素的浓度来实现隧道结,从而保持 半导体与电极之间的欧姆特性良好。