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1. 发明专利

JP2003068699A Sidewall-removing liquid 有权
标题翻译：拆卸液体
公开(公告)号：JP2003068699A
公开(公告)日：2003-03-07
申请号：JP2001252481
申请日：2001-08-23
申请人： Showa Denko Kk , 昭和電工株式会社
发明人： SHIMIZU KOJI , SUGIYAMA TSUTOMU , MIYAHARA KUNIAKI
IPC分类号： C09D9/00 , H01L21/302 , H01L21/306 , H01L21/3065 , H01L21/3213 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide a removing liquid, capable of removing sidewall at a low temperature and in a short time, without corroding a metal wiring material or an interlayer material, etc.
SOLUTION: The sidewall-removing liquid, containing a fluorine compound, certain types of amino alcohols, an organic solvent and water having a pH of 9-11, can remove sidewall at a low temperature and in a short time, without corroding the metal wiring material or the interlayer material.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供能够在低温和短时间内去除侧壁的除去液体，而不会腐蚀金属布线材料或中间层材料等。解决方案：含有氟化合物的侧壁去除液体某些类型的氨基醇，有机溶剂和pH为9-11的水可以在低温和短时间内去除侧壁，而不会腐蚀金属布线材料或中间层材料。

2. 发明专利

AU1410200A Composition for removing sidewall and method of removing sidewall 未知
公开(公告)号：AU1410200A
公开(公告)日：2000-06-19
申请号：AU1410200
申请日：1999-11-26
申请人： SHOWA DENKO KK
发明人： OGATA FUJIMARO , SUGIYAMA TSUTOMU , MIYAHARA KUNIAKI
IPC分类号： C11D3/02 , C11D3/20 , C11D7/08 , C11D11/00 , G03F7/42 , H01L21/02 , H01L21/3213 , H01L21/308 , H01L21/302 , H01L21/027 , C11D7/22
摘要： A composition for removing side wall which comprises an aqueous solution containing both nitric acid and at least one of carboxylic acids selected from the group consisting of polycarboxylic acid, aminocarboxylic acid, and salts threreof; a method of removing side wall; and a process for producing a semiconductor device. Use of the composition is effective in removing side wall at a low temperature in a short time in semiconductor device production without corroding the wiring material, e.g., an aluminium alloy. Thus, a semiconductor device having an aluminium alloy wiring which has undergone substantially no corrosion can be efficiently produced.

3. 发明公开

EP1139401A4 COMPOSITION FOR REMOVING SIDEWALL AND METHOD OF REMOVING SIDEWALL 有权
标题翻译：组合物和方法用于侧面墙的距离
公开(公告)号：EP1139401A4
公开(公告)日：2007-05-02
申请号：EP99973167
申请日：1999-11-26
申请人： SHOWA DENKO KK
发明人： OGATA FUJIMARO , SUGIYAMA TSUTOMU , MIYAHARA KUNIAKI
IPC分类号： C11D3/02 , C11D3/20 , C11D7/08 , C11D11/00 , G03F7/42 , H01L21/02 , H01L21/3213 , H01L21/308 , C11D7/22 , H01L21/027 , H01L21/302
CPC分类号： H01L21/02071 , C11D3/042 , C11D3/2075 , C11D3/2082 , C11D3/2086 , C11D7/08 , C11D11/0047 , G03F7/423
摘要： A composition for removing sidewalls which comprises an aqueous solution containing both nitric acid and at least one carboxylic acid compound selected from the group consisting of polycarboxylic acids, aminocarboxylic acids, and salts of these; a method of removing sidewalls; and a process for producing a semiconductor device. Use of the composition is effective in removing sidewalls at a low temperature in a short time in semiconductor device production without corroding the wiring material, e.g., an aluminum alloy. Thus, a semiconductor device having an aluminum alloy wiring which has undergone substantially no corrosion can be efficiently produced.

4. 发明专利

JP2000056479A SIDE WALL REMOVING LIQUID 失效
公开(公告)号：JP2000056479A
公开(公告)日：2000-02-25
申请号：JP22411398
申请日：1998-08-07
申请人： SHOWA DENKO KK
发明人： OGATA FUJIMARO , SUGIYAMA TSUTOMU , MIYAHARA KUNIAKI , SHIMIZU KOJI
IPC分类号： C09K13/04 , C11D7/00 , G03F1/00 , G03F1/68 , G03F7/36 , G03F7/42 , H01L21/302 , H01L21/306 , H01L21/3065 , H01L21/3213 , H01L21/768 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide a side wall removing liquid capable of easily removing the side wall occurring at the time of dry etching in semiconductor- manufacturing process from a semiconductor substrate without corroding a wiring material. SOLUTION: The side wall is removed from the semiconductor substrate by using a generally used side wall removing liquid after immersing the semiconductor substrate into an aqueous solution of nitric acid, preferably, in a nitric acid concentration of 0. 1-80 weight %, preferably, in an immersing time of 1 sec-1 hr, and rinsing it with water.

5. 发明专利

JP2000338686A SIDEWALL REMOVING LIQUID 失效
公开(公告)号：JP2000338686A
公开(公告)日：2000-12-08
申请号：JP15003299
申请日：1999-05-28
申请人： SHOWA DENKO KK
发明人： OGATA FUJIMARO , SUGIYAMA TSUTOMU , MIYAHARA KUNIAKI
IPC分类号： H01L21/302 , G03F7/42 , H01L21/027 , H01L21/3065 , H01L21/308
摘要： PROBLEM TO BE SOLVED: To provide a sidewall removing liquid which is capable of rapidly (within 60 minutes) removing the sidewalls generated at the time of dry etching in a semiconductor production stage at a low temperature (

6. 发明专利

JP2000164597A SIDE WALL REMOVING SOLUTION 失效
公开(公告)号：JP2000164597A
公开(公告)日：2000-06-16
申请号：JP33759998
申请日：1998-11-27
申请人： SHOWA DENKO KK
发明人： OGATA FUJIMARO , SUGIYAMA TSUTOMU , MIYAHARA KUNIAKI
IPC分类号： H01L21/3213 , H01L21/308
摘要： PROBLEM TO BE SOLVED: To provide a side wall removing solution which is capable of removing a side wall at a low temperature in a short time without corroding a wiring material, by a method wherein the removing solution contains amino alcohol, tetraalkylammonium hydroxide, water, organic solvent, and anticorrosives as integral components. SOLUTION: An exposed metal layer 3 is subjected to a dry etching treatment. At this point, a part, of the metal layer 3 where resist is removed is etched, and a side wall 6 is formed at the same time. In succession, a resist pattern 4 is removed by ashing, and a metal wiring pattern 3 is formed. The side wall 6 is removed by the use of a side wall removing solution. At this point, the side wall removing solution is composed of amino alcohol such as N-methyl monoethanolamine or the like, tetraalkylammonium hydroxide, water, organic solvent such as ethylene glycol or the like, and corrosives such as glucose or the like. By this setup, the side wall 6 'can be removed by the removing solution at a low temperature in a short time without corroding a wiring material.

7. 发明专利

JP2000056478A SIDE WALL REMOVING LIQUID 失效
公开(公告)号：JP2000056478A
公开(公告)日：2000-02-25
申请号：JP22086498
申请日：1998-08-04
申请人： SHOWA DENKO KK
发明人： OGATA FUJIMARO , SUGIYAMA TSUTOMU , MIYAHARA KUNIAKI
IPC分类号： G03F7/42 , H01L21/308
摘要： PROBLEM TO BE SOLVED: To provide a side wall removing liquid capable of easily removing the side wall at low cost and low temperature in a short time in one process without corroding a wiring material. SOLUTION: The side wall removing liquid, preferably, can use at least one kind of oxidant selected from a group comprising ozone, hydrogen peroxide, hypochlorus acid or hypochlorite, chlorus acid or chlorite, perchloric acid or perchlorate, hypobromus acid or hypobromite, bromus acid or bromite, perbromic acid or perbromite, hypoiodus acid or hypoiodite, iodus acid or iodite, and the like.

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