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1. 发明申请

US20050021321A1 Apparatus, method, and program for estimation of biological electromagnetic compatibility 审中-公开
标题翻译：用于估计生物电磁兼容性的装置，方法和程序
公开(公告)号：US20050021321A1
公开(公告)日：2005-01-27
申请号：US10760376
申请日：2004-01-21
申请人： Shoji Mochizuki , Souichi Watanabe , Yukio Yamanaka , Maso Taki , Hiroshi Shirai
发明人： Shoji Mochizuki , Souichi Watanabe , Yukio Yamanaka , Maso Taki , Hiroshi Shirai
IPC分类号： G01N22/00 , G06G7/48 , G06G7/58 , H05K9/00
CPC分类号： H05K9/0069 , G16H50/50
摘要： In an apparatus, a method, and a program for estimation of biological electromagnetic compatibility, model data of a scattering body and an electromagnetic wave radiation source, data for prescribing a range to which an MoM including the electromagnetic wave radiation source is applied and a range to which a scattered field type FDTD method including the scattering body and the range to which the MoM is applied, and the like are previously prepared. The distribution of a current distributed by a voltage fed to the electromagnetic wave radiation source is determined by the MoM, incident electromagnetic fields incident on the respective grids in the scattering body are determined using the resultant distribution of the current, an electromagnetic field scattered from the scattering body is determined from the resultant incident electromagnetic field by the scattered field type FDTD method, electromotive forces induced in the respective segments of the electromagnetic wave radiation source are determined from the resultant scattered electromagnetic field, and further the distribution of the current is determined again in consideration of the induced electromotive forces. The above processing steps are repeated until the electromagnetic fields incident on the respective grids in the scattering body, and the like are converged. With the above operation, the biological electromagnetic compatibility can be estimated by executing calculations simply without depending on the distance between the electromagnetic wave radiation source and the scattering body.
摘要翻译：在用于估计生物电磁兼容性的装置，方法和程序，散射体和电磁波辐射源的模型数据，用于规定包括电磁波辐射源的MoM的范围的数据和范围预先制备了包括散射体和施加MoM的范围的散射场型FDTD方法等。由馈送到电磁波辐射源的电压分布的电流的分布由MoM确定，散射体中入射到各个栅格上的入射电磁场使用电流的分布，从通过散射场型FDTD方法从所得到的入射电磁场确定散射体，从所得到的散射电磁场确定在电磁波辐射源的各个段中感应的电动势，并且再次确定电流的分布考虑感应电动势。重复上述处理步骤，直到入射到散射体中的各个栅格的电磁场等收敛。通过上述操作，可以简单地执行计算来估计生物电磁兼容性，而不依赖于电磁波辐射源和散射体之间的距离。

2. 发明授权

US07505392B2 Optical disk with a plurality of radially extending marks for recording reflectance data of the optical disk 有权
标题翻译：具有用于记录光盘的反射率数据的多个径向延伸标记的光盘
公开(公告)号：US07505392B2
公开(公告)日：2009-03-17
申请号：US10988707
申请日：2004-11-16
申请人： Reiji Tamura , Hiroshi Shirai
发明人： Reiji Tamura , Hiroshi Shirai
IPC分类号： G11B7/24
CPC分类号： G11B7/00736 , G11B7/0053 , G11B7/24079 , G11B7/268 , Y10T428/21
摘要： An optical disk includes a first area on which user information is recorded, and a second area in which a plurality of marks radially extending are arranged in a track direction in the optical disk. Information about the reflectance of the optical disk is recorded in the second area. It is intended to optimize the amplification factor of the reproduced signal on the basis of the information about the reflectance of the optical disk in the second area. Control data and user data can be reproduced quickly and highly reliably without depending on the relationship between the reflectances of a recording area and a non-recorded area of the optical disk.
摘要翻译：光盘包括其上记录有用户信息的第一区域和在光盘中沿轨道方向布置多个径向延伸的标记的第二区域。关于光盘的反射率的信息被记录在第二区域中。旨在基于关于第二区域中的光盘的反射率的信息来优化再现信号的放大系数。控制数据和用户数据可以快速而高可靠地再现，而不依赖于记录区域的反射率与光盘的非记录区域之间的关系。

3. 发明申请

US20060003607A1 Electrical connector 失效
标题翻译：电连接器
公开(公告)号：US20060003607A1
公开(公告)日：2006-01-05
申请号：US11218877
申请日：2005-09-02
申请人： Hiroshi Shirai , Shinichi Hashimoto
发明人： Hiroshi Shirai , Shinichi Hashimoto
IPC分类号： H01R12/00
CPC分类号： H05K7/1069 , H01R12/714 , H01R13/24
摘要： The electrical connector of the present invention has an insulative housing having a first face across from a first electrical circuit and a second face across from a second electrical circuit. A plurality of contacts are mounted in the insulative housing, each of which contacts a contact point of the first electrical circuit at the first face, and contacts a contact point of the second electrical circuit at the second face, thereby interconnecting the first and second circuits. Each of the contacts has one portion of the contact supported by the insulative housing so as to be capable of pivoting in response to the displacement of the first contact portion and the second contact portion.
摘要翻译：本发明的电连接器具有绝缘壳体，其具有与第一电路相对的第一面和跨越第二电路的第二面。多个触点安装在绝缘壳体中，每个触点接触第一面处的第一电路的接触点，并且在第二面处接触第二电路的接触点，从而将第一和第二电路。每个触点具有由绝缘壳体支撑的触点的一部分，以便能够响应于第一接触部分和第二接触部分的位移而枢转。

4. 发明授权

US06976888B2 LGA socket contact 失效
标题翻译： LGA插座触点
公开(公告)号：US06976888B2
公开(公告)日：2005-12-20
申请号：US10662006
申请日：2003-09-12
申请人： Hiroshi Shirai , Shinichi Hashimoto , Hidenori Taguchi
发明人： Hiroshi Shirai , Shinichi Hashimoto , Hidenori Taguchi
IPC分类号： H01R33/76 , H01R4/48 , H01R13/24 , H05K7/10
CPC分类号： H01R13/2442 , H01R12/52 , H01R12/714 , H05K7/1069
摘要： A land grid array socket contact has a resilient contact that extends parallel to a base plate and is attached to at least one side walls of the base plate by a curved section angled approximately 180 degrees from the at least one side wall. The resilient contact has a free end for contacting a contact pad. A board terminal extends from a lower end of the base plate for connection to a circuit board. In another embodiment, the land grid array socket contact has a resilient contact extending from an upper end of a base plate. The resilient contact has an elongated slit substantially in a center of the resilient contact with respect to a direction of width and a free end for contacting a contact pad. A board terminal extends from a lower end of the base plate for connection to a circuit board.
摘要翻译：平面栅格阵列插座接触件具有平行于基板延伸的弹性接触件，并且通过与所述至少一个侧壁成大约180度的弯曲部分附接到所述基板的至少一个侧壁。弹性接触件具有用于接触接触垫的自由端。板端子从基板的下端延伸以连接到电路板。在另一个实施例中，焊盘格栅阵列插座接触件具有从基板的上端延伸的弹性接触。弹性接触件具有相对于宽度方向基本上位于弹性接触件的中心的细长狭缝和用于接触接触垫的自由端。板端子从基板的下端延伸以连接到电路板。

5. 发明授权

US06734960B1 Wafer defect measuring method and apparatus 有权
标题翻译：晶圆缺陷测量方法和装置
公开(公告)号：US06734960B1
公开(公告)日：2004-05-11
申请号：US09589087
申请日：2000-06-08
申请人： Hiroyuki Goto , Hiroyuki Saito , Makiko Fujinami , Hiroshi Shirai
发明人： Hiroyuki Goto , Hiroyuki Saito , Makiko Fujinami , Hiroshi Shirai
IPC分类号： G01N2100
CPC分类号： C30B29/06 , G01N21/95 , G01N21/956 , G01N25/00 , H01L22/12
摘要： The depth and a relative dimensional factor of a defect present in the interior of a silicon wafer are measured, and the number of such defects is calculated. A laser beam having a larger energy than the band gap of silicon is radiated obliquely to the semiconductor wafer and a scattered beam from a defect present in a subsurface layer of the wafer is detected by an image pick-up device. The temperature of the wafer is changed to at least two temperatures of T1 and T2 or to any one of plural temperatures by means of a heater and the intensity of a scattered beam is measured. It is taken into account that the light absorbance of silicon and the penetration depth of light in silicon vary depending on temperature, to determine the depth and a relative dimensional factor of an internal defect which causes scattering of light, as well as the number of such crystal defects.
摘要翻译：测量存在于硅晶片内部的缺陷的深度和相对尺寸因子，并计算出这些缺陷的数量。具有比硅的带隙大的能量的激光束被倾斜地辐射到半导体晶片，并且由图像拾取装置检测来自晶片的地下层中存在的缺陷的散射光束。通过加热器将晶片的温度改变为T1和T2的至少两个温度或多个温度中的任何一个，并测量散射光束的强度。考虑到硅的吸光度和硅中的光的穿透深度根据温度而变化，以确定导致光散射的内部缺陷的深度和相对尺寸因子，以及其数量晶体缺陷。

6. 发明授权

US06025596A Method for measuring epitaxial film thickness of multilayer epitaxial wafer 失效
标题翻译：测量多层外延晶片的外延膜厚度的方法
公开(公告)号：US06025596A
公开(公告)日：2000-02-15
申请号：US19049
申请日：1998-02-05
申请人： Hiroshi Shirai , Kenji Akai , Toshio Abe , Chikara Tojima , Katsuyuki Iwata
发明人： Hiroshi Shirai , Kenji Akai , Toshio Abe , Chikara Tojima , Katsuyuki Iwata
IPC分类号： G01B11/06 , H01L21/66 , H01L29/739 , H01L29/78 , G01J5/02
CPC分类号： G01B11/0625
摘要： In a measurement method for measuring the epitaxial film thickness of a multilayer epitaxial wafer, a reflectivity spectrum of a multilayer epitaxial wafer having at least two epitaxial layers of different electric characteristics is measured by using infrared radiation in a far infrared region of at least 500 cm.sup.-1 or less, and frequency-analysis is performed on the reflection spectrum thus obtained by a maximum entropy method, and the film thickness of each epitaxial layer is calculated on the basis of the analysis spectrum thus obtained.
摘要翻译：在用于测量多层外延晶片的外延膜厚度的测量方法中，通过在至少500cm的远红外区域中使用红外辐射来测量具有不同电特性的至少两个外延层的多层外延晶片的反射率光谱 -1以下，对通过最大熵法得到的反射光谱进行频率分析，根据得到的分析光谱计算各外延层的膜厚。

7. 发明授权

US5744401A Silicon wafer manufacturing method eliminating final mirror-polishing step 失效
标题翻译：消除最终镜面抛光步骤的硅晶片制造方法
公开(公告)号：US5744401A
公开(公告)日：1998-04-28
申请号：US620195
申请日：1996-03-22
申请人： Hiroshi Shirai , Jun Yoshikawa , Youji Ogawa , Kazuhiko Kashima , Kazuya Ookubo , Yukari Kohtari , Norihiro Shimoi , Masayuki Sanada , Shuji Tobashi
发明人： Hiroshi Shirai , Jun Yoshikawa , Youji Ogawa , Kazuhiko Kashima , Kazuya Ookubo , Yukari Kohtari , Norihiro Shimoi , Masayuki Sanada , Shuji Tobashi
IPC分类号： H01L21/02 , H01L21/30 , H01L21/306 , H01L21/324 , H01L21/00
CPC分类号： H01L21/02008 , H01L21/3003
摘要： A silicon wafer is mirror-polished until obtaining surface roughness Ra of 0.70-1.00 nm, Rq of 0.80-1.10 nm, or Rt of 4.50-7.00 nm. The resulting wafer is heat-treated at a temperature not lower than 1,200.degree. C. for 30 minutes to 4 hours in a hydrogen gas atmosphere. According to another aspect, a silicon wafer is mirror-polished until obtaining surface roughness values Ra' of 0.08-0.70 nm, rms of 0.10-0.90 nm, and P-V of 0.80-5.80 nm in a square area of 90 .mu.m by 90 .mu.m, and surface roughness values Ra' of 0.13-0.40 nm, rms of 0.18-0.50 nm, and P-V of 1.30-2.50 nm in a square area of 500 nm by 500 nm. The resulting wafer is heat-treated at 1,100.degree.-1,300.degree. C. for 30 minutes to 4 hours in a hydrogen gas atmosphere.
摘要翻译：对硅晶片进行镜面抛光，直到获得0.70-1.00nm的表面粗糙度Ra，0.80-1.10nm的Rq或4.50-7.00nm的Rt。将得到的晶片在氢气气氛中在不低于1200℃的温度下热处理30分钟至4小时。根据另一方面，将硅晶片进行镜面抛光，直到得到表面粗糙度值Ra'为0.08-0.70nm，均方厘米为0.10-0.90nm，PV为0.80-5.80nm，平方90μm的面积为90μm m，表面粗糙度Ra'为0.13-0.40nm，均方根为0.18-0.50nm，PV为1.30-2.50nm，平均面积为500nm至500nm。将得到的晶片在氢气气氛中在1100〜1300℃下热处理30分钟〜4小时。

8. 发明授权

US4942854A Valve operating device for use in internal combustion engine 失效
标题翻译：用于内燃机的阀门操作装置
公开(公告)号：US4942854A
公开(公告)日：1990-07-24
申请号：US317771
申请日：1989-03-02
申请人： Hiroshi Shirai , Takashi Tatsumi , Hisashi Kanda , Koichi Fukuo , Masahiko Motsumoto , Toshiaki Hiro
发明人： Hiroshi Shirai , Takashi Tatsumi , Hisashi Kanda , Koichi Fukuo , Masahiko Motsumoto , Toshiaki Hiro
IPC分类号： F01L1/08
CPC分类号： F01L1/08
摘要： A valve operating device for operating an intake or exhaust valve in an internal combustion engine includes a cam having a cam profile including a valve lifting portion for applying a force to open the engine valve and a base circle portion for allowing the valve to be closed, the cam profile having a valve opening point and a valve closing point between the valve lifting portion and the base circle portion, a cam follower slidably engaging the cam, and a hydraulic lash adjuster combined with the cam follower for eliminating any gap between the means and the engine valve. The base circle portion has a gradient cam surface or a combination of different gradient cam surfaces for canceling out valve-lifting radial displacement of the base circle portion.

9. 发明授权

US4502933A Apparatus for electrolytic treatment to metal web 失效
标题翻译：金属网电解处理设备
公开(公告)号：US4502933A
公开(公告)日：1985-03-05
申请号：US447555
申请日：1982-12-07
申请人： Teruo Mori , Hiroshi Shirai , Tsutomu Kakei , Tsuneyasu Matsuhisa , Masaru Watanabe
发明人： Teruo Mori , Hiroshi Shirai , Tsutomu Kakei , Tsuneyasu Matsuhisa , Masaru Watanabe
IPC分类号： C25D13/16 , C25D7/06 , C25D11/00 , C25D17/00 , C25D21/10 , C25F7/00
CPC分类号： C25D7/0614
摘要： A method and apparatus for electrolytic treatment to a metal web includes transporting the metal web between pairs of electrolytic-plates which are immersed in an electrolyzer. A plurality of insulating members extends from upper surface or bottom of the electrolyzer along a widthwise direction of the metal web, and the insulating members function to interrupt a flow of the electrolyte which is circulated in the electrolyzer which increases the agitation rate of the electrolyte in the vicinity of the surfaces of the metal web.
摘要翻译：用于金属网的电解处理的方法和装置包括将金属网传送到浸在电解槽中的电解板对之间。多个绝缘构件沿着金属腹板的宽度方向从电解槽的上表面或底部延伸，并且绝缘构件用于中断在电解槽中循环的电解质的流动，这增加了电解液的搅拌速度金属网的表面附近。

10. 发明授权

US07985803B2 Resin composition for optical material 有权
标题翻译：光学材料用树脂组合物
公开(公告)号：US07985803B2
公开(公告)日：2011-07-26
申请号：US12078478
申请日：2008-03-31
申请人： Jun Yonezawa , Eiko Kobayashi , Masahito Kuramitsu , Yuko Fukuoka , Kimihiro Kubo , Hiroshi Shirai
发明人： Jun Yonezawa , Eiko Kobayashi , Masahito Kuramitsu , Yuko Fukuoka , Kimihiro Kubo , Hiroshi Shirai
IPC分类号： C08L33/02 , C08L33/04 , C08L33/18 , C08L33/20 , C08L35/02
CPC分类号： C08L25/10 , C08L25/12 , C08L33/06 , C08L33/12 , G02B1/04 , G02B5/3083 , C08L33/10 , C08L33/08 , C08L2666/04
摘要： An optical material having a high birefringence and a small absolute value of a photoelastic coefficient is provided by use of a resin composition for an optical material comprising a resin (a) having a positive photoelastic coefficient and a negative inherent birefringence and a resin (b) having a negative photoelastic coefficient and a negative inherent birefringence.
摘要翻译：通过使用包含具有正光弹性系数和负固有双折射的树脂（a）的光学材料用树脂组合物和树脂（b），提供具有高双折射和小的光弹性系数绝对值的光学材料，具有负光弹性系数和负固有双折射。

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