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1. 发明授权

US4404236A High pressure chemical vapor deposition 失效
标题翻译：高压化学气相沉积
公开(公告)号：US4404236A
公开(公告)日：1983-09-13
申请号：US314305
申请日：1981-10-23
申请人： Shoichi Komatsu , Seiichi Iwamatsu
发明人： Shoichi Komatsu , Seiichi Iwamatsu
IPC分类号： H01L21/205 , C23C16/40 , C23C16/458 , C30B33/00 , H01L21/31 , H01L21/316 , H01L21/318
CPC分类号： C23C16/4584 , C23C16/402 , C30B33/005
摘要： A process for carrying out chemical vapor deposition under increased pressure is provided. By carrying out chemical vapor deposition under increased pressure, a boundry layer of reduced thickness is formed which permit formation of a chemical vapor reaction film in the minute necking portions on the surface of the substrate formed during formation of the electrical components, such as a transistor or an integrated circuit. The step of chemical vapor deposition under increased pressure may be followed by chemical vapor deposition at normal or reduced pressure for forming a film of uniform thickness across the wafer.
摘要翻译：提供了一种在增加压力下进行化学气相沉积的方法。通过在增加的压力下进行化学气相沉积，形成厚度减小的边界层，其允许在电气部件形成期间形成的基板表面上的微小颈缩部分形成化学气相反应膜，例如晶体管或集成电路。在增加压力下化学气相沉积的步骤可以在正常或减压下进行化学气相沉积，以在晶片上形成均匀厚度的膜。

2. 发明授权

US5119170A Thin film metal interconnects in integrated circuit structures to reduce circuit operation speed delay 失效
标题翻译：薄膜金属互连集成电路结构，以减少电路运行速度的延迟
公开(公告)号：US5119170A
公开(公告)日：1992-06-02
申请号：US759786
申请日：1991-09-09
申请人： Seiichi Iwamatsu
发明人： Seiichi Iwamatsu
IPC分类号： H01L21/3205 , H01L23/52 , H01L23/522
CPC分类号： H01L23/5222 , H01L2924/0002 , H01L2924/3011 , Y10S257/915
摘要： A method of forming thin film metal interconnects employed in integrated circuit structures comprising the step of laying out the interconnects so that the patterned interconnects have a relationship of interconnect width, L, and interconnect spatial separation, S, so that S>1 .mu.m>L. In particular, line width, L, is equal to or less than 0.8 .mu.m, spatial separation, S, is in the range of 1.0 .mu.m to 1.2 .mu.m and interconnect thickness, T.sub.A1, is about 0.5 .mu.m thereby providing effective optimization in the amount of reduction in interconnect spatial capacitance resulting in increased operation speed of the integrated circuit structure.
摘要翻译：一种形成用于集成电路结构的薄膜金属互连的方法，包括布置互连的步骤，使得图案化互连具有互连宽度L和互连空间间隔S的关系，使得S>1μm> L. 特别地，线宽L等于或小于0.8μm，空间分离S在1.0μm至1.2μm的范围内，并且互连厚度TA1为约0.5μm，从而提供有效优化在互连空间电容的减少量上，导致集成电路结构的运算速度提高。

3. 发明授权

US4538291A X-ray source 失效
标题翻译： X射线源
公开(公告)号：US4538291A
公开(公告)日：1985-08-27
申请号：US438569
申请日：1982-11-02
申请人： Seiichi Iwamatsu
发明人： Seiichi Iwamatsu
IPC分类号： H05G2/00 , H05G1/00 , H01J35/00
CPC分类号： H05G2/001
摘要： An X-ray source for producing high intensity X-rays. The X-ray source includes a vessel filled with an inert gas. An energizing mechanism such as a magnetic coil causes the gas to enter a pinch, plasma state which produces high intensity X-rays. The vessel includes a window through which the X-rays are radiated. In a second embodiment, a laser or electron beam bombards a crystal of selected material to produce the X-rays. The material, when gasified, does not interfere with radiation of the X-rays.
摘要翻译：用于产生高强度X射线的X射线源。 X射线源包括填充有惰性气体的容器。诸如电磁线圈的激励机构使得气体进入产生高强度X射线的夹紧等离子体状态。容器包括一个窗口，X射线通过该窗口辐射。在第二实施例中，激光或电子束轰击选定材料的晶体以产生X射线。气化后的材料不会干扰X射线的辐射。

4. 发明申请

US20050121623A1 Electron beam duplication lithography method and apparatus 失效
标题翻译：电子束复制光刻方法及装置
公开(公告)号：US20050121623A1
公开(公告)日：2005-06-09
申请号：US11040202
申请日：2005-01-21
申请人： Seiichi Iwamatsu
发明人： Seiichi Iwamatsu
IPC分类号： A61N5/00 , G21G5/00 , H01J37/30 , H01J37/317
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , H01J2237/31779 , H01J2237/31786 , Y10S430/143
摘要： An electron beam duplication lithography apparatus and method for focusing electrons emitted from a mask plate as a result of an application of an electric field between a mask plate and a duplication plate. Irradiation of electrons from the mask plate is assisted through an electric field lens or magnetic field lens, or a combination thereof from an electron field emission material formed into a pattern on a flat surface of a substrate. The result is that a congruent or similar pattern is lithographed by electron beam exposure onto an electron beam resist film from a field emission film having the congruent or similar pattern to be created.
摘要翻译：一种电子束复制光刻设备和方法，用于对由掩模板和复制板之间施加电场的结果聚焦从掩模板发射的电子。通过电场透镜或磁场透镜或其组合形成在基板的平坦表面上的图案的电子场发射材料来辅助来自掩模板的电子的照射。其结果是，通过电子束照射到具有一致或类似图案的场致发射膜的电子束抗蚀剂膜上，将所有等同或相似的图案进行平版印刷。

5. 发明授权

US5327011A Semiconductor device with enhanced via or contact hole connection between an interconnect layer and a connecting region 失效
标题翻译：具有在互连层和连接区域之间增强的通孔或接触孔连接的半导体器件
公开(公告)号：US5327011A
公开(公告)日：1994-07-05
申请号：US918295
申请日：1992-07-22
申请人： Seiichi Iwamatsu
发明人： Seiichi Iwamatsu
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/485 , H01L23/52 , H01L23/522 , H01L23/48 , H01L29/46
CPC分类号： H01L23/485 , H01L21/76877 , H01L2924/0002
摘要： A semiconductor device has an interconnect layer, connected to a connecting region, such as a diffusion region or layer formed on the surface of a substrate, through a contact hole formed in an interlayer insulating film, which includes a concavity, representing a defective portion, extending from the bottom portion of the contact hole to the surface of the interconnect layer. This defective portion occurs because the metal comprising the interconnect layer will not penetrate to completely fill the contact hole. To correct for this formed defective portion, the concavity, the concavity is permitted to be formed followed by its filling with a plug electrode comprising a high quality penetration metal film, such as, tungsten. As a result, the mechanical as well as electrical characteristics of the interconnect layer connection to the connecting region is significantly improve by the presence of the plug electrode. In an alternative approach, both the interlayer insulating film and the interconnect layer comprising, for example, aluminum layer, may first be formed on the surface of the substrate followed by the selective etching to form concavities or contact holes within which are formed plug electrodes comprising, for example, a tungsten film for electrically connecting the interconnect layer to the diffusion layer through the plug electrode per se.
摘要翻译：半导体器件具有互连层，其通过形成在层间绝缘膜中的接触孔连接到诸如形成在衬底表面上的扩散区或层的连接区域，该接触孔包括表示缺陷部分的凹面，从接触孔的底部延伸到互连层的表面。发生这种缺陷部分是因为包括互连层的金属将不会渗透以完全填充接触孔。为了校正该形成的缺陷部分，凹面，允许形成凹部，随后填充包括诸如钨的高质量穿透金属膜的插头电极。结果，通过插头电极的存在，显着地改善了与连接区域的互连层连接的机械以及电特性。在替代方法中，层间绝缘膜和包括例如铝层的互连层可以首先形成在基板的表面上，然后进行选择性蚀刻，以形成凹部或接触孔，其中形成插塞电极，包括例如，用于通过插头电极本身将互连层电连接到扩散层的钨膜。

6. 发明授权

US4231657A Light-reflection type pattern forming system 失效
标题翻译：光反射型图案形成系统
公开(公告)号：US4231657A
公开(公告)日：1980-11-04
申请号：US22848
申请日：1979-03-22
申请人： Seiichi Iwamatsu
发明人： Seiichi Iwamatsu
IPC分类号： H01L21/30 , G03F7/20 , H01L21/027 , G03B27/72
CPC分类号： G03F7/70283 , G03F7/2002
摘要： A light-reflection type pattern forming system used in the process for producing semiconductor devices. The system comprises a light source, a light-reflection type mask having a highly reflective region with a desired pattern on its surface, and an object to be exposed by the light reflected from said highly reflective region. The reflected light contains the information about the desired pattern and the desired pattern is copied on the object. Since this constitution uses reflected light instead of transmitted light, the absorption of light can be prevented and also the restriction on the range of wavelengths of the light from the source can be removed. The part of the incident light cast on the region other than the highly reflective region is absorbed, irregularly reflected or diverted so as not to expose the object.
摘要翻译：在半导体器件的制造方法中使用的光反射型图案形成系统。该系统包括光源，具有在其表面上具有期望图案的高反射区域的光反射型掩模，以及由所述高反射区域反射的光而被曝光的物体。反射光包含有关所需图案的信息，并将所需图案复制到对象上。由于该结构使用反射光而不是透射光，因此可以防止光的吸收，并且还可以去除来自光源的光的波长范围的限制。在高反射区域以外的区域中投射的入射光的部分被吸收，不规则地反射或转向，以便不暴露物体。

7. 发明申请

US20070230767A1 Method for Displaying Bioinformation Using Millimeter-Wave Band Electromagnetic Wave, Device for Acquiring and Displaying Bioinformation 审中-公开
标题翻译：使用毫米波波段电磁波显示生物信息的方法，用于获取和显示生物信息的装置
公开(公告)号：US20070230767A1
公开(公告)日：2007-10-04
申请号：US11628731
申请日：2005-07-11
申请人： Seiichi Iwamatsu , Tomohiro Marui , Nobuaki Kawaguchi , Makoto Shinozaki
发明人： Seiichi Iwamatsu , Tomohiro Marui , Nobuaki Kawaguchi , Makoto Shinozaki
IPC分类号： G06K9/00
CPC分类号： A61B5/05 , A61B5/0507
摘要： A method and device for extracting medically effective information by applying a millimeter-wave band electromagnetic wave to an organism and analyzing transmission, reflection and spontaneous radiation signals. The method and display comprise an acquiring step or means in which a database is so prepared in advance that from the transmission, reflection, and spontaneous electromagnetic wave data measured in a state that an organism is irradiated with an electromagnetic wave having wavelength components the wavelengths of which are 6 to 14 mm and a state that the organism is not irradiated, electromagnetic characteristics at the organism surface and in the organism is categorized and organized by actual condition of the organism constituent element, and the actual condition information on the organism constituent element of the subject is acquired according to the database information from the transmission, reflection, and spontaneous electromagnetic wave data measured in a state that the organism, the subject, is irradiated with a similar electromagnetic wave and a state that the organism is not irradiated; a step of associating the position information on the measurement portion of the subject with three-dimensional meridians and meridian points; and an image displaying step.
摘要翻译：一种通过将毫米波段电磁波应用于生物体并分析透射，反射和自发辐射信号来提取医学有效信息的方法和装置。该方法和显示器包括获取步骤或装置，其中数据库预先如此准备：从在发射，反射和自发电磁波数据中测量的状态下，生物被辐射的波长成分的波长成分的电磁波照射其为6〜14mm，生物体不被照射的状态，生物体表面和生物体的电磁特性根据生物构成要素的实际条件分类和组织，并且关于生物体构成元素的实际条件信息根据来自发射，反射和自发电磁波数据的数据库信息获取对象，该数据信息在生物体，受试者用相似的电磁波照射的状态和生物体未照射的状态下测量; 将被检体的测定部位的位置信息与三维子午线和子午点相关联的步骤; 和图像显示步骤。

8. 发明授权

US06849856B1 Electron beam duplication lithography method and apparatus 失效
公开(公告)号：US06849856B1
公开(公告)日：2005-02-01
申请号：US09836857
申请日：2001-04-17
申请人： Seiichi Iwamatsu
发明人： Seiichi Iwamatsu
IPC分类号： A61N5/00 , G21G5/00 , H01J37/30 , H01J37/317
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , H01J2237/31779 , H01J2237/31786 , Y10S430/143
摘要： An electron beam duplication lithography apparatus and method for focusing electrons emitted from a mask plate as a result of an application of an electric field between a mask plate and a duplication plate. Irradiation of electrons from the mask plate is assisted through an electric field lens or magnetic field lens, or a combination thereof from an electron field emission material formed into a pattern on a flat surface of a substrate. The result is that a congruent or similar pattern is lithographed by electron beam exposure onto an electron beam resist film from a field emission film having the congruent or similar pattern to be created.

9. 发明授权

US5294821A Thin-film SOI semiconductor device having heavily doped diffusion regions beneath the channels of transistors 失效
标题翻译：薄膜SOI半导体器件在晶体管的沟道下方具有重掺杂的扩散区域
公开(公告)号：US5294821A
公开(公告)日：1994-03-15
申请号：US773162
申请日：1991-10-08
申请人： Seiichi Iwamatsu
发明人： Seiichi Iwamatsu
IPC分类号： H01L27/12 , H01L29/06 , H01L29/417 , H01L29/786 , H01L27/01 , H01L29/76
CPC分类号： H01L29/78612 , H01L29/0653 , H01L29/41733 , H01L29/78606 , H01L29/78639 , H01L27/1203
摘要： Thin-film SOI semiconductor devices formed in a thin film Si semiconductor substrate layer formed on an insulating layer on a semiconductor substrate have improved electrical characteristics and reliable reproducibility of those characteristics in the mass production, which are obtained by utilizing semiconductor substrate having high concentrations of active impurities, or by utilizing voltage biased, impurity diffusion regions in the surface of the semiconductor substrate aligned beneath CMOS FETs formed in the thin film Si layer. They can also be obtained by extension of the semiconductor substrate through the insulating film to the channel region of the CMOS FETs formed in a thin film Si regions. Further, reliably reproducible contact connection of electrodes to buried thin film Si layers is also achieved.
摘要翻译：形成在半导体基板上的绝缘层上形成的薄膜Si半导体衬底层中的薄膜SOI半导体器件具有改善的电特性，并且通过利用具有高浓度的半导体衬底或者通过在半导体衬底的表面中利用电压偏置的杂质扩散区域排列在薄膜Si层中形成的CMOS FET之下。它们也可以通过将半导体衬底通过绝缘膜延伸到形成在薄膜Si区域中的CMOS FET的沟道区域而获得。此外，还实现了可靠地再现的电极与埋入的薄膜Si层的接触连接。

10. 发明授权

US4401738A X-Ray lithography mask 失效
标题翻译： X光光刻胶片
公开(公告)号：US4401738A
公开(公告)日：1983-08-30
申请号：US321997
申请日：1981-11-16
申请人： Seiichi Iwamatsu
发明人： Seiichi Iwamatsu
IPC分类号： G03F1/00 , G03F1/76 , H01L21/027 , H01L21/30 , G03C5/00
CPC分类号： G03F1/22 , H01L21/30 , Y10S430/167 , Y10S430/168
摘要： An X-ray mask including a pattern of X-ray absorbing material on a thin membrane is provided. The mask includes overlapping first and second patterns of X-ray absorbing material. This permits X-ray lithography printing of lines in complex patterns required for large scale integration. The X-ray mask can provide patterns of less than 20 A in thickness by X-ray irradiation.
摘要翻译：提供了包括薄膜上的X射线吸收材料图案的X射线掩模。掩模包括重叠的X射线吸收材料的第一和第二图案。这允许大规模集成所需的复杂图案中的线的X射线光刻印刷。 X射线掩模可以通过X射线照射提供厚度小于20A的图案。

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