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1. 发明申请

US20060292859A1 Damascene process using dielectic layer containing fluorine and nitrogen 审中-公开
标题翻译：使用含氟和氮的介电层的镶嵌工艺
公开(公告)号：US20060292859A1
公开(公告)日：2006-12-28
申请号：US11166237
申请日：2005-06-27
申请人： Shiu-Ko Jian , Sheng-Wen Chen , Hung-Jui Chang , Ying-Lang Wang
发明人： Shiu-Ko Jian , Sheng-Wen Chen , Hung-Jui Chang , Ying-Lang Wang
IPC分类号： H01L21/4763
CPC分类号： H01L21/76808 , H01L21/02131 , H01L21/0214 , H01L21/02211 , H01L21/02271 , H01L21/3144 , H01L21/31629
摘要： An improved damascene process for fabricating a semiconductor device. A dielectric layer comprising at least both fluorine and nitrogen is formed overlying a substrate, in which a nitrogen content in the dielectric layer is about 5% to 10%. The dielectric layer is subsequently pattered to form at least one damascene opening therein. A metal layer is formed overlying the dielectric layer and fills the damascene opening. The excess metal layer on the dielectric layer is removed to leave the metal layer in the damascene opening. A semiconductor device with the same damascene structure is also disclosed.
摘要翻译：用于制造半导体器件的改进的镶嵌工艺。形成至少包含氟和氮两者的电介质层，覆盖在基底中，其中介电层中的氮含量为约5％至10％。随后图案化介电层以在其中形成至少一个镶嵌开口。形成覆盖在电介质层上的金属层并填充镶嵌开口。去除电介质层上的多余的金属层，使金属层离开镶嵌开口。还公开了具有相同镶嵌结构的半导体器件。

2. 发明申请

US20070151949A1 Semiconductor processes and apparatuses thereof 审中-公开
标题翻译：半导体工艺及其装置
公开(公告)号：US20070151949A1
公开(公告)日：2007-07-05
申请号：US11326267
申请日：2006-01-04
申请人： Shiu-Ko Jian , Morning Wu , W. Huang , C. Sun
发明人： Shiu-Ko Jian , Morning Wu , W. Huang , C. Sun
IPC分类号： B44C1/22 , C23F1/00 , H01L21/306 , H01L21/302
CPC分类号： H01L21/31111 , H01L21/02079
摘要： Methods of semiconductor processing and apparatuses are disclosed. An organic solvent is applied over a surface of a material layer on a substrate in which the material layer includes a short-chain structure. A fluorine-containing solution is applied over the surface of the material layer to substantially remove the material layer from the substrate. The apparatus comprises the wafer holder coupled to the organic solvent source and the fluorine solution source. The wafer holder accommodates at least one wafer. The organic solvent source supplies an organic solvent with a temperature from about 18° C. to about 40° C., a concentration from about 90 w. % to about 100 w. % and is applied over the substrate about 100 seconds or more. The fluorine solution source containing fluorine solution supplies the fluorine-containing solution with a temperature from about 18° C. to about 70° C. and a concentration from about 1 w. % to about 49 w. %.
摘要翻译：公开了半导体处理方法和装置。将有机溶剂施加在基材上的材料层的表面上，其中材料层包括短链结构。将含氟溶液施加在材料层的表面上，以从衬底基本上去除材料层。该装置包括与有机溶剂源和氟溶液源耦合的晶片保持器。晶片架容纳至少一个晶片。有机溶剂源提供温度为约18℃至约40℃，浓度为约90w的有机溶剂。％至约100w。％，并施加在基材上约100秒以上。含有氟溶液的氟溶液源将含氟溶液的温度从约18℃至约70℃提供，浓度约为1w。％至约49 w。％。

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