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1. 发明授权

US08889461B2 CIS image sensors with epitaxy layers and methods for forming the same 有权
标题翻译：具有外延层的CIS图像传感器及其形成方法
公开(公告)号：US08889461B2
公开(公告)日：2014-11-18
申请号：US13620322
申请日：2012-09-14
申请人： Shiu-Ko JangJian , Min Hao Hong , Kei-Wei Chen , Chih-Cherng Jeng
发明人： Shiu-Ko JangJian , Min Hao Hong , Kei-Wei Chen , Chih-Cherng Jeng
IPC分类号： H01L31/113 , H01L27/146
CPC分类号： H01L27/14645 , H01L27/14612 , H01L27/14616 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14689 , H01L29/16 , H01L31/028 , H01L31/103 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method includes performing a first epitaxy to grow a first epitaxy layer of a first conductivity type, and performing a second epitaxy to grow a second epitaxy layer of a second conductivity type opposite the first conductivity type over the first epitaxy layer. The first and the second epitaxy layers form a diode. The method further includes forming a gate dielectric over the first epitaxy layer, forming a gate electrode over the gate dielectric, and implanting a top portion of the first epitaxy layer and the second epitaxy layer to form a source/drain region adjacent to the gate dielectric.
摘要翻译：一种方法包括执行第一外延以生长第一导电类型的第一外延层，以及执行第二外延以在第一外延层上生长与第一导电类型相反的第二导电类型的第二外延层。第一和第二外延层形成二极管。该方法还包括在第一外延层上形成栅极电介质，在栅极电介质上方形成栅电极，以及注入第一外延层和第二外延层的顶部部分，以形成与栅极电介质相邻的源极/漏极区域。

2. 发明申请

US20130320419A1 CIS Image Sensors with Epitaxy Layers and Methods for Forming the Same 有权
公开(公告)号：US20130320419A1
公开(公告)日：2013-12-05
申请号：US13620322
申请日：2012-09-14
申请人： Shiu-Ko JangJian , Min Hao Hong , Kei-Wei Chen , Chih-Cherng Jeng
发明人： Shiu-Ko JangJian , Min Hao Hong , Kei-Wei Chen , Chih-Cherng Jeng
IPC分类号： H01L31/113 , H01L31/18
CPC分类号： H01L27/14645 , H01L27/14612 , H01L27/14616 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14689 , H01L29/16 , H01L31/028 , H01L31/103 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method includes performing a first epitaxy to grow a first epitaxy layer of a first conductivity type, and performing a second epitaxy to grow a second epitaxy layer of a second conductivity type opposite the first conductivity type over the first epitaxy layer. The first and the second epitaxy layers form a diode. The method further includes forming a gate dielectric over the first epitaxy layer, forming a gate electrode over the gate dielectric, and implanting a top portion of the first epitaxy layer and the second epitaxy layer to form a source/drain region adjacent to the gate dielectric.

3. 发明授权

US09349902B2 System and method for reducing irregularities on the surface of a backside illuminated photodiode 有权
标题翻译：用于减少背面照射光电二极管表面的凹凸的系统和方法
公开(公告)号：US09349902B2
公开(公告)日：2016-05-24
申请号：US13486833
申请日：2012-06-01
申请人： Shiu-Ko JangJian , Kei-Wei Chen , Chi-Cherng Jeng , Min Hao Hong
发明人： Shiu-Ko JangJian , Kei-Wei Chen , Chi-Cherng Jeng , Min Hao Hong
IPC分类号： H01L31/00 , H01L31/103 , H01L29/36 , H01L31/18
CPC分类号： H01L31/103 , H01L29/36 , H01L31/1037 , H01L31/18 , H01L31/1812 , Y02E10/50
摘要： System and method for processing a semiconductor device surface to reduce dark current and white pixel anomalies. An embodiment comprises a method applied to a semiconductor or photodiode device surface adjacent to a photosensitive region, and opposite a side having circuit structures for the device. A doped layer may optionally be created at a depth of less than about 10 nanometers below the surface of the substrate and may be doped with a boron concentration between about 1E13 and 1E16. An oxide may be created on the substrate using a temperature sufficient to reduce the surface roughness below a predetermined roughness threshold, and optionally at a temperature between about 300° C. and 500° C. and a thickness between about 1 nanometer and about 10 nanometers. A dielectric may then be created on the oxide, the dielectric having a refractive index greater than a predetermined refractive threshold, optionally at least about 2.0.
摘要翻译：用于处理半导体器件表面以减少暗电流和白色像素异常的系统和方法。一个实施例包括应用于与光敏区域相邻的半导体或光电二极管器件表面的方法，以及与该器件的电路结构相反的一侧。掺杂层可以任选地在衬底表面下方小于约10纳米的深度处产生，并且可以掺杂在约1E13和1E16之间的硼浓度。可以使用足以将表面粗糙度降低到预定粗糙度阈值以下且可选地在约300℃至500℃之间的温度和约1纳米至约10纳米的厚度的温度在基底上产生氧化物。然后可以在氧化物上产生电介质，电介质具有大于预定折射阈值的折射率，任选至少约2.0。

4. 发明授权

US08772899B2 Method and apparatus for backside illumination sensor 有权
标题翻译：背面照明传感器的方法和装置
公开(公告)号：US08772899B2
公开(公告)日：2014-07-08
申请号：US13409924
申请日：2012-03-01
申请人： Shiu-Ko JangJian , Min Hao Hong , Kei-Wei Chen , Ying-Lang Wang
发明人： Shiu-Ko JangJian , Min Hao Hong , Kei-Wei Chen , Ying-Lang Wang
IPC分类号： H01L31/00 , H01L31/02
CPC分类号： H01L27/1464 , H01L27/14687
摘要： Methods and apparatus for a backside illuminated (BSI) image sensor device are disclosed. A BSI sensor device is formed on a substrate comprising a photosensitive diode. The substrate may be thinned at the backside, then a B doped Epi-Si(Ge) layer may be formed on the backside surface of the substrate. Additional layers may be formed on the B doped Epi-Si(Ge) layer, such as a metal shield layer, a dielectric layer, a micro-lens, and a color filter.
摘要翻译：公开了用于背面照明（BSI）图像传感器装置的方法和装置。在包括感光二极管的基板上形成BSI传感器装置。衬底可以在背面变薄，则可以在衬底的背面上形成B掺杂的Epi-Si（Ge）层。另外的层可以形成在B掺杂的Epi-Si（Ge）层上，例如金属屏蔽层，电介质层，微透镜和滤色器。

5. 发明申请

US20130320478A1 System and Method for Processing a Backside Illuminated Photodiode 有权
标题翻译：用于处理背面照明光电二极管的系统和方法
公开(公告)号：US20130320478A1
公开(公告)日：2013-12-05
申请号：US13486833
申请日：2012-06-01
申请人： Shiu-Ko JangJian , Kei-Wei Chen , Chi-Cherng Jeng , Min Hao Hong
发明人： Shiu-Ko JangJian , Kei-Wei Chen , Chi-Cherng Jeng , Min Hao Hong
IPC分类号： H01L31/103 , H01L29/36 , H01L31/18
CPC分类号： H01L31/103 , H01L29/36 , H01L31/1037 , H01L31/18 , H01L31/1812 , Y02E10/50
摘要： System and method for processing a semiconductor device surface to reduce dark current and white pixel anomalies. An embodiment comprises a method applied to a semiconductor or photodiode device surface adjacent to a photosensitive region, and opposite a side having circuit structures for the device. A doped layer may optionally be created at a depth of less than about 10 nanometers below the surface of the substrate and may be doped with a boron concentration between about 1E13 and 1E16. An oxide may be created on the substrate using a temperature sufficient to reduce the surface roughness below a predetermined roughness threshold, and optionally at a temperature between about 300° C. and 500° C. and a thickness between about 1 nanometer and about 10 nanometers. A dielectric may then be created on the oxide, the dielectric having a refractive index greater than a predetermined refractive threshold, optionally at least about 2.0.
摘要翻译：用于处理半导体器件表面以减少暗电流和白色像素异常的系统和方法。一个实施例包括应用于与光敏区域相邻的半导体或光电二极管器件表面的方法，以及与该器件的电路结构相反的一侧。掺杂层可以任选地在衬底表面下方小于约10纳米的深度处产生，并且可以掺杂在约1E13和1E16之间的硼浓度。可以使用足以将表面粗糙度降低到预定粗糙度阈值以下且可选地在约300℃至500℃之间的温度和约1纳米至约10纳米的厚度的温度在基底上产生氧化物。然后可以在氧化物上产生电介质，电介质具有大于预定折射阈值的折射率，任选至少约2.0。

6. 发明申请

US20130234202A1 Image Sensor Isolation Region and Method of Forming the Same 有权
标题翻译：图像传感器隔离区域及其形成方法
公开(公告)号：US20130234202A1
公开(公告)日：2013-09-12
申请号：US13415546
申请日：2012-03-08
申请人： Shiu-Ko JangJian , Min Hao Hong , Kei-Wei Chen , Szu-An Wu
发明人： Shiu-Ko JangJian , Min Hao Hong , Kei-Wei Chen , Szu-An Wu
IPC分类号： H01L31/109 , H01L31/18
CPC分类号： H01L27/1463 , H01L27/1464
摘要： Image sensors comprising an isolation region according to embodiments are disclosed, as well as methods of forming the image sensors with isolation region. An embodiment is a structure comprising a semiconductor substrate, a photo element in the semiconductor substrate, and an isolation region in the semiconductor substrate. The isolation region is proximate the photo element and comprises a dielectric material and an epitaxial region. The epitaxial region is disposed between the semiconductor substrate and the dielectric material.
摘要翻译：公开了包括根据实施例的隔离区域的图像传感器，以及形成具有隔离区域的图像传感器的方法。实施例是包括半导体衬底，半导体衬底中的光电元件和半导体衬底中的隔离区域的结构。隔离区域靠近光电元件并且包括电介质材料和外延区域。外延区域设置在半导体衬底和电介质材料之间。

7. 发明申请

US20130228886A1 Method and Apparatus for Backside Illumination Sensor 有权
标题翻译：背面照明传感器的方法和装置
公开(公告)号：US20130228886A1
公开(公告)日：2013-09-05
申请号：US13409924
申请日：2012-03-01
申请人： Shiu-Ko JangJian , Min Hao Hong , Kei-Wei Chen , Ying-Lang Wang
发明人： Shiu-Ko JangJian , Min Hao Hong , Kei-Wei Chen , Ying-Lang Wang
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/1464 , H01L27/14687
摘要： Methods and apparatus for a backside illuminated (BSI) image sensor device are disclosed. A BSI sensor device is formed on a substrate comprising a photosensitive diode. The substrate may be thinned at the backside, then a B doped Epi-Si(Ge) layer may be formed on the backside surface of the substrate. Additional layers may be formed on the B doped Epi-Si(Ge) layer, such as a metal shield layer, a dielectric layer, a micro-lens, and a color filter.
摘要翻译：公开了用于背面照明（BSI）图像传感器装置的方法和装置。在包括感光二极管的基板上形成BSI传感器装置。衬底可以在背面变薄，则可以在衬底的背面上形成B掺杂的Epi-Si（Ge）层。另外的层可以形成在B掺杂的Epi-Si（Ge）层上，例如金属屏蔽层，电介质层，微透镜和滤色器。

8. 发明授权

US09673244B2 Image sensor isolation region and method of forming the same 有权
公开(公告)号：US09673244B2
公开(公告)日：2017-06-06
申请号：US13415546
申请日：2012-03-08
申请人： Shiu-Ko JangJian , Min Hao Hong , Kei-Wei Chen , Szu-An Wu
发明人： Shiu-Ko JangJian , Min Hao Hong , Kei-Wei Chen , Szu-An Wu
IPC分类号： H01L31/109 , H01L27/146
CPC分类号： H01L27/1463 , H01L27/1464
摘要： Image sensors comprising an isolation region according to embodiments are disclosed, as well as methods of forming the image sensors with isolation region. An embodiment is a structure comprising a semiconductor substrate, a photo element in the semiconductor substrate, and an isolation region in the semiconductor substrate. The isolation region is proximate the photo element and comprises a dielectric material and an epitaxial region. The epitaxial region is disposed between the semiconductor substrate and the dielectric material.

9. 发明授权

US08628998B2 Annealing methods for backside illumination image sensor chips 有权
标题翻译：后背照明图像传感器芯片的退火方法
公开(公告)号：US08628998B2
公开(公告)日：2014-01-14
申请号：US13477897
申请日：2012-05-22
申请人： Yu-Ting Lin , Cheng-Jung Sung , Yu-Sheng Wang , Shiu-Ko JangJian , Wei-Ming You , Chih-Cherng Jeng , Ching-Hwanq Su
发明人： Yu-Ting Lin , Cheng-Jung Sung , Yu-Sheng Wang , Shiu-Ko JangJian , Wei-Ming You , Chih-Cherng Jeng , Ching-Hwanq Su
IPC分类号： H01L21/00
CPC分类号： H01L27/14687 , H01L21/268 , H01L27/14636 , H01L27/1464 , H01L27/14689
摘要： A method includes performing a grinding on a backside of a semiconductor substrate. An image sensor is disposed on a front side of the semiconductor substrate. An impurity is doped into a surface layer of the backside of the semiconductor substrate to form a doped layer. A multi-cycle laser anneal is performed on the doped layer.
摘要翻译：一种方法包括在半导体衬底的背面进行研磨。图像传感器设置在半导体衬底的前侧。杂质掺杂到半导体衬底的背面的表面层中以形成掺杂层。在掺杂层上进行多周期激光退火。

10. 发明申请

US20130171766A1 Annealing Methods for Backside Illumination Image Sensor Chips 有权
标题翻译：背面照明图像传感器芯片的退火方法
公开(公告)号：US20130171766A1
公开(公告)日：2013-07-04
申请号：US13477897
申请日：2012-05-22
申请人： Yu-Ting Lin , Cheng-Jung Sung , Yu-Sheng Wang , Shiu-Ko JangJian , Wei-Ming You , Chih-Cherng Jeng , Ching-Hwanq Su
发明人： Yu-Ting Lin , Cheng-Jung Sung , Yu-Sheng Wang , Shiu-Ko JangJian , Wei-Ming You , Chih-Cherng Jeng , Ching-Hwanq Su
IPC分类号： H01L31/18
CPC分类号： H01L27/14687 , H01L21/268 , H01L27/14636 , H01L27/1464 , H01L27/14689
摘要： A method includes performing a grinding on a backside of a semiconductor substrate. An image sensor is disposed on a front side of the semiconductor substrate. An impurity is doped into a surface layer of the backside of the semiconductor substrate to form a doped layer. A multi-cycle laser anneal is performed on the doped layer.
摘要翻译：一种方法包括在半导体衬底的背面进行研磨。图像传感器设置在半导体衬底的前侧。杂质掺杂到半导体衬底的背面的表面层中以形成掺杂层。在掺杂层上进行多周期激光退火。

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