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1. 发明申请

US20130181258A1 IMAGE SENSOR AND METHOD OF MANUFACTURING 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：US20130181258A1
公开(公告)日：2013-07-18
申请号：US13349221
申请日：2012-01-12
申请人： Shiu-Ko JangJian , Kei-Wei CHEN , Szu-An WU , Ying-Lang WANG
发明人： Shiu-Ko JangJian , Kei-Wei CHEN , Szu-An WU , Ying-Lang WANG
IPC分类号： H01L27/148 , H01L27/146
CPC分类号： H01L27/14621 , H01L27/14623 , H01L27/1464
摘要： An image sensor includes a substrate having opposite first and second sides, a multilayer structure on the first side of the substrate, and a photo-sensitive element on the second side of the substrate. The photo-sensitive element is configured to receive light that is incident upon the first side and transmitted through the multilayer structure and the substrate. The multilayer structure includes first and second light transmitting layers. The first light transmitting layer is sandwiched between the substrate and the second light transmitting layer. The first light transmitting layer has a refractive index that is from 60% to 90% of a refractive index of the substrate. The second light transmitting layer has a refractive index that is lower than the refractive index of the first light transmitting layer and is from 40% to 70% of the refractive index of the substrate.
摘要翻译：图像传感器包括具有相对的第一和第二侧的基板，在基板的第一侧上的多层结构和在基板的第二侧上的感光元件。光敏元件被配置为接收入射在第一侧并透过多层结构和基板的光。该多层结构包括第一和第二透光层。第一透光层夹在基板和第二透光层之间。第一透光层的折射率为基板折射率的60％至90％。第二透光层的折射率低于第一透光层的折射率，为基板的折射率的40％〜70％。

2. 发明申请

US20130075831A1 METAL GATE STACK HAVING TIALN BLOCKING/WETTING LAYER 审中-公开
标题翻译：金属门盖有天然气阻塞/湿润层
公开(公告)号：US20130075831A1
公开(公告)日：2013-03-28
申请号：US13244355
申请日：2011-09-24
申请人： Shiu-Ko JangJian , Szu-An Wu , Ying-Lang Wang , Chi-Wen Liu
发明人： Shiu-Ko JangJian , Szu-An Wu , Ying-Lang Wang , Chi-Wen Liu
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66545
摘要： A metal gate stack having a TiAlN blocking/wetting layer, and methods of manufacturing the same, are disclosed. In an example, an integrated circuit device includes a semiconductor substrate and a gate stack disposed over the semiconductor substrate. The gate stack includes a gate dielectric layer disposed over the semiconductor substrate; a work function layer disposed over the gate dielectric layer; a multi-function wetting/blocking layer disposed over the work function layer, wherein the multi-function wetting/blocking layer is a titanium aluminum nitride layer; and a conductive layer disposed over the multi-function wetting/blocking layer.
摘要翻译：公开了具有TiAlN阻挡/润湿层的金属栅极堆叠及其制造方法。在一个示例中，集成电路器件包括设置在半导体衬底上的半导体衬底和栅极堆叠。栅极堆叠包括设置在半导体衬底上的栅介质层; 设置在所述栅极介电层上的功函数层; 设置在所述功函数层上的多功能润湿/阻挡层，其中所述多功能润湿/阻挡层是氮化铝钛层; 以及设置在多功能润湿/阻挡层上的导电层。

3. 发明授权

US07611589B2 Methods of spin-on wafer cleaning 有权
标题翻译：旋转晶圆清洗方法
公开(公告)号：US07611589B2
公开(公告)日：2009-11-03
申请号：US11072114
申请日：2005-03-04
申请人： Jun Wu , Dong-Xuan Lu , Shih-Chi Lin , Wen-Long Lee , Yi-An Jian , Guang-Cheng Wang , Shiu-Ko JangJian , Chyi-Tsong Ni , Szu-An Wu , Ying-Lang Wang
发明人： Jun Wu , Dong-Xuan Lu , Shih-Chi Lin , Wen-Long Lee , Yi-An Jian , Guang-Cheng Wang , Shiu-Ko JangJian , Chyi-Tsong Ni , Szu-An Wu , Ying-Lang Wang
IPC分类号： B08B3/02 , B08B1/04
CPC分类号： B08B1/04 , B08B3/02 , H01L21/67051
摘要： A method for spin-on wafer cleaning. The method comprises controlling spin speed and vertical water jet pressure. The vertical jet pressure and the spin speed are substantially maintained in inverse proportion. Wafer spin speed is between 50 to 1200 rpm. Vertical wafer jet pressure is between 0.05 to 100 KPa.
摘要翻译：旋转晶片清洗的方法。该方法包括控制旋转速度和垂直喷水压力。垂直喷射压力和旋转速度基本保持成反比例。晶圆转速在50至1200rpm之间。垂直晶片喷射压力为0.05至100KPa。

4. 发明申请

US20060196526A1 Methods of spin-on wafer cleaning 有权
公开(公告)号：US20060196526A1
公开(公告)日：2006-09-07
申请号：US11072114
申请日：2005-03-04
申请人： Jun Wu , Dong-Xuan Lu , Shih-Chi Lin , Wen-Long Lee , Yi-An Jian , Guang-Cheng Wang , Shiu-Ko JangJian , Chyi-Tsong Ni , Szu-An Wu , Ying-Lang Wang
发明人： Jun Wu , Dong-Xuan Lu , Shih-Chi Lin , Wen-Long Lee , Yi-An Jian , Guang-Cheng Wang , Shiu-Ko JangJian , Chyi-Tsong Ni , Szu-An Wu , Ying-Lang Wang
IPC分类号： C23G1/00 , B08B7/00 , B08B3/00
CPC分类号： B08B1/04 , B08B3/02 , H01L21/67051
摘要： A method for spin-on wafer cleaning. The method comprises controlling spin speed and vertical water jet pressure. The vertical jet pressure and the spin speed are substantially maintained in inverse proportion. Wafer spin speed is between 50 to 1200 rpm. Vertical wafer jet pressure is between 0.05 to 100 KPa.

5. 发明授权

US09673244B2 Image sensor isolation region and method of forming the same 有权
公开(公告)号：US09673244B2
公开(公告)日：2017-06-06
申请号：US13415546
申请日：2012-03-08
申请人： Shiu-Ko JangJian , Min Hao Hong , Kei-Wei Chen , Szu-An Wu
发明人： Shiu-Ko JangJian , Min Hao Hong , Kei-Wei Chen , Szu-An Wu
IPC分类号： H01L31/109 , H01L27/146
CPC分类号： H01L27/1463 , H01L27/1464
摘要： Image sensors comprising an isolation region according to embodiments are disclosed, as well as methods of forming the image sensors with isolation region. An embodiment is a structure comprising a semiconductor substrate, a photo element in the semiconductor substrate, and an isolation region in the semiconductor substrate. The isolation region is proximate the photo element and comprises a dielectric material and an epitaxial region. The epitaxial region is disposed between the semiconductor substrate and the dielectric material.

6. 发明申请

US20130234202A1 Image Sensor Isolation Region and Method of Forming the Same 有权
标题翻译：图像传感器隔离区域及其形成方法
公开(公告)号：US20130234202A1
公开(公告)日：2013-09-12
申请号：US13415546
申请日：2012-03-08
申请人： Shiu-Ko JangJian , Min Hao Hong , Kei-Wei Chen , Szu-An Wu
发明人： Shiu-Ko JangJian , Min Hao Hong , Kei-Wei Chen , Szu-An Wu
IPC分类号： H01L31/109 , H01L31/18
CPC分类号： H01L27/1463 , H01L27/1464
摘要： Image sensors comprising an isolation region according to embodiments are disclosed, as well as methods of forming the image sensors with isolation region. An embodiment is a structure comprising a semiconductor substrate, a photo element in the semiconductor substrate, and an isolation region in the semiconductor substrate. The isolation region is proximate the photo element and comprises a dielectric material and an epitaxial region. The epitaxial region is disposed between the semiconductor substrate and the dielectric material.
摘要翻译：公开了包括根据实施例的隔离区域的图像传感器，以及形成具有隔离区域的图像传感器的方法。实施例是包括半导体衬底，半导体衬底中的光电元件和半导体衬底中的隔离区域的结构。隔离区域靠近光电元件并且包括电介质材料和外延区域。外延区域设置在半导体衬底和电介质材料之间。

7. 发明申请

US20130193538A1 Methods and Apparatus for an Improved Reflectivity Optical Grid for Image Sensors 有权
标题翻译：用于图像传感器的改进的反射光学网格的方法和装置
公开(公告)号：US20130193538A1
公开(公告)日：2013-08-01
申请号：US13363280
申请日：2012-01-31
申请人： Shiu-Ko JangJian , Kei-Wei Chen , Ying-Lang Wang
发明人： Shiu-Ko JangJian , Kei-Wei Chen , Ying-Lang Wang
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L31/022441 , H01L27/14623 , H01L27/14629 , H01L27/1464 , H01L31/022433
摘要： An improved reflectivity optical grid for image sensors. In an embodiment, a backside illuminated CIS device includes a semiconductor substrate having a pixel array area comprising a plurality of photosensors formed on a front side surface of the semiconductor substrate, each of the photosensors forming a pixel in the pixel array area; an optical grid material disposed over a backside surface of the semiconductor substrate, the optical grid material patterned to form an optical grid that bounds each of the pixels in the pixel array area and extending above the semiconductor substrate, the optical grid having sidewalls and a top portion; and a highly reflective coating formed over the optical grid, comprising a pure metal coating of a metal that is at least 99% pure, and a high-k dielectric coating over the pure metal coating that has a refractive index of greater than about 2.0. Methods are also disclosed.
摘要翻译：用于图像传感器的改进的反射光栅。在一个实施例中，背面照明的CIS器件包括具有像素阵列区域的半导体衬底，该像素阵列区域包括形成在半导体衬底的前侧表面上的多个光电传感器，每个光电传感器在像素阵列区域中形成像素; 设置在半导体衬底的背侧表面上的光栅格材料，所述光栅格材料被图案化以形成限定像素阵列区域中的每个像素并在半导体衬底上方延伸的光栅，所述光栅具有侧壁和顶部一部分; 以及形成在光栅上的高反射涂层，包括纯金属的纯金属涂层，其纯度至少为99％，纯金属涂层上的高k电介质涂层具有大于约2.0的折射率。还公开了方法。

8. 发明授权

US08772899B2 Method and apparatus for backside illumination sensor 有权
标题翻译：背面照明传感器的方法和装置
公开(公告)号：US08772899B2
公开(公告)日：2014-07-08
申请号：US13409924
申请日：2012-03-01
申请人： Shiu-Ko JangJian , Min Hao Hong , Kei-Wei Chen , Ying-Lang Wang
发明人： Shiu-Ko JangJian , Min Hao Hong , Kei-Wei Chen , Ying-Lang Wang
IPC分类号： H01L31/00 , H01L31/02
CPC分类号： H01L27/1464 , H01L27/14687
摘要： Methods and apparatus for a backside illuminated (BSI) image sensor device are disclosed. A BSI sensor device is formed on a substrate comprising a photosensitive diode. The substrate may be thinned at the backside, then a B doped Epi-Si(Ge) layer may be formed on the backside surface of the substrate. Additional layers may be formed on the B doped Epi-Si(Ge) layer, such as a metal shield layer, a dielectric layer, a micro-lens, and a color filter.
摘要翻译：公开了用于背面照明（BSI）图像传感器装置的方法和装置。在包括感光二极管的基板上形成BSI传感器装置。衬底可以在背面变薄，则可以在衬底的背面上形成B掺杂的Epi-Si（Ge）层。另外的层可以形成在B掺杂的Epi-Si（Ge）层上，例如金属屏蔽层，电介质层，微透镜和滤色器。

9. 发明申请

US20130228886A1 Method and Apparatus for Backside Illumination Sensor 有权
标题翻译：背面照明传感器的方法和装置
公开(公告)号：US20130228886A1
公开(公告)日：2013-09-05
申请号：US13409924
申请日：2012-03-01
申请人： Shiu-Ko JangJian , Min Hao Hong , Kei-Wei Chen , Ying-Lang Wang
发明人： Shiu-Ko JangJian , Min Hao Hong , Kei-Wei Chen , Ying-Lang Wang
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/1464 , H01L27/14687
摘要： Methods and apparatus for a backside illuminated (BSI) image sensor device are disclosed. A BSI sensor device is formed on a substrate comprising a photosensitive diode. The substrate may be thinned at the backside, then a B doped Epi-Si(Ge) layer may be formed on the backside surface of the substrate. Additional layers may be formed on the B doped Epi-Si(Ge) layer, such as a metal shield layer, a dielectric layer, a micro-lens, and a color filter.
摘要翻译：公开了用于背面照明（BSI）图像传感器装置的方法和装置。在包括感光二极管的基板上形成BSI传感器装置。衬底可以在背面变薄，则可以在衬底的背面上形成B掺杂的Epi-Si（Ge）层。另外的层可以形成在B掺杂的Epi-Si（Ge）层上，例如金属屏蔽层，电介质层，微透镜和滤色器。

10. 发明授权

US09356059B2 BSI image sensor chips and methods for forming the same 有权
标题翻译： BSI图像传感器芯片及其形成方法
公开(公告)号：US09356059B2
公开(公告)日：2016-05-31
申请号：US13352980
申请日：2012-01-18
申请人： Shiu-Ko JangJian , Kei-Wei Chen , Ying-Lang Wang
发明人： Shiu-Ko JangJian , Kei-Wei Chen , Ying-Lang Wang
IPC分类号： H01L29/04 , H01L27/146
CPC分类号： H01L27/14623 , H01L27/1464 , H01L27/14685
摘要： A device includes semiconductor substrate having a front side and a backside. A polysilicon layer is disposed on the backside of the semiconductor substrate. The polysilicon layer includes a portion doped with a p-type impurity. A dielectric layer is disposed on the backside of the semiconductor substrate, wherein the polysilicon layer is between the semiconductor substrate and the polysilicon layer.
摘要翻译：一种器件包括具有正面和背面的半导体衬底。多晶硅层设置在半导体衬底的背面。多晶硅层包括掺杂有p型杂质的部分。电介质层设置在半导体衬底的背面，其中多晶硅层位于半导体衬底和多晶硅层之间。

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