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1. 发明申请

US20080289957A1 Vacuum Film Forming Apparatus 审中-公开
标题翻译：真空成膜装置
公开(公告)号：US20080289957A1
公开(公告)日：2008-11-27
申请号：US11662563
申请日：2005-09-05
申请人： Shirou Takigawa , Keiji Katou , Nobuo Yoneyama
发明人： Shirou Takigawa , Keiji Katou , Nobuo Yoneyama
IPC分类号： C23C14/34 , C23C14/35
CPC分类号： C23C14/352 , B05D1/62 , C23C14/205 , H01J37/3405 , H01J37/3447
摘要： A vacuum film forming apparatus is provided that is intended to use a portion of its cylindrical member as a target and moreover have an additional function of plasma polymerization using the cylindrical member.A vacuum film forming apparatus (100) is provided with an electrically conductive vacuum chamber (13) having an interior space, a frame member (15) having a plurality of curved members (31, 32) each curved in a sector shape and arranged in the interior space (10) so as to form a substantially cylindrical shape, and a magnetic field forming device (33) disposed in an interior surrounded by the frame member (15) and configured to form a magnetic field along the circumference of the frame member (15). At least one of the curved members (15, 16) is a target used for sputtering, and a region of the frame member (15) other than the target is used for plasma polymerization.
摘要翻译：提供一种真空成膜装置，其旨在使用其圆柱形构件的一部分作为靶，并且还具有使用该圆柱形构件的等离子体聚合的附加功能。真空成膜装置（100）设置有具有内部空间的导电真空室（13），具有多个弯曲构件（31,32）的框架构件（15），每个弯曲构件（31,32）以扇形形状弯曲并布置在所述内部空间（10）形成为大致圆筒形状;以及磁场形成装置（33），其设置在由所述框架构件（15）围绕的内部，并被构造成沿着所述框架构件的周缘形成磁场（15）。弯曲构件（15,16）中的至少一个是用于溅射的靶，并且除了靶之外的框架构件（15）的区域用于等离子体聚合。

2. 发明申请

US20090229977A1 Magnet Structure and Cathode Electrode Unit for Magnetron Sputtering System, and Magnetron Sputtering System 审中-公开
标题翻译：磁控溅射系统的磁体结构和阴极电极单元，以及磁控溅射系统
公开(公告)号：US20090229977A1
公开(公告)日：2009-09-17
申请号：US12090465
申请日：2006-11-02
申请人： Takahiko Kondo , Takanobu Hori , Yasukuni Iwasaki , Nobuo Yoneyama
发明人： Takahiko Kondo , Takanobu Hori , Yasukuni Iwasaki , Nobuo Yoneyama
IPC分类号： C23C14/35
CPC分类号： C23C14/3407 , H01J37/3405 , H01J37/3461
摘要： Provided are a magnet structure and the like capable of changing a magnetic force line distribution on a surface of a target to thereby achieve wide erosion of a target, using a simple drive mechanism. A magnet structure (110) comprises a main magnet (10, 13) disposed at a reverse surface (20B) side of a target (20) to produce a main magnetic force line reaching an obverse surface (20A) of the target, an adjustment magnet (11) disposed at the reverse surface (20B) side of the target (20) to produce an adjustment magnetic force line for changing a magnetic flux density distribution produced by the main magnetic force line, a magnetic path (21A, 21B, 24) of the adjustment magnetic force line which is disposed at the reverse surface (20B) side of the target 20, and a magnetic field adjustment means (12, 14) configured to be able to change strength of the adjustment magnetic force line passing through inside of the magnetic path (21A, 21B, 24).
摘要翻译：提供了能够使用简单的驱动机构改变目标表面上的磁力线分布从而实现目标的广泛侵蚀的磁体结构等。磁体结构（110）包括设置在目标（20）的反面（20B）侧的主磁体（10,13），以产生到达目标的正面（20A）的主磁力线，调节设置在所述目标（20）的所述反面（20B）侧的磁体（11），以产生用于改变由所述主磁力线产生的磁通密度分布的调节磁力线，磁路（21A，21B，24 ）设置在靶20的反面（20B）侧的调整用磁力线以及能够改变通过内侧的调节用磁力线的强度的磁场调整单元（12,14）的磁路（21A，21B，24）。

3. 发明申请

US20070277732A1 Film Forming Apparatus 审中-公开
标题翻译：成膜装置
公开(公告)号：US20070277732A1
公开(公告)日：2007-12-06
申请号：US10592556
申请日：2005-03-10
申请人： Nobuo Yoneyama , Takashi Nakayama , Shiro Takigawa , Takao Umezawa , Motosuke Ishizawa , Hiroshi Takano
发明人： Nobuo Yoneyama , Takashi Nakayama , Shiro Takigawa , Takao Umezawa , Motosuke Ishizawa , Hiroshi Takano
IPC分类号： C23C14/00
CPC分类号： C23C14/34 , H01J37/32458 , H01J37/3435
摘要： A film forming apparatus which can perform a film forming process to a base material while the base material is being mounted on a die for a molding process. The film forming apparatus is provided with a cylinder-shaped frame body (1h) having one end closed with a bottom part and the other end opened, a target (1a) arranged on an inner plane of the bottom part, and a port (3b) formed to penetrate a wall part of the frame body (1h).
摘要翻译：一种成膜设备，其可以在将基材安装在用于模制过程的模具上的基材上进行成膜处理。成膜装置具有：一端封闭的筒状框体（1h），另一端开口，另一端开放，设置在底部内面的靶（1a）和端部（3b）形成为穿透框体（1h）的壁部。

4. 发明授权

US08608918B2 Magnet structure and cathode electrode unit for magnetron sputtering, and magnetron sputtering system 有权
标题翻译：用于磁控溅射的磁体结构和阴极单元，以及磁控溅射系统
公开(公告)号：US08608918B2
公开(公告)日：2013-12-17
申请号：US12067908
申请日：2006-08-23
申请人： Takanobu Hori , Yasukuni Iwasaki , Nobuo Yoneyama , Keisuke Kondo
发明人： Takahiko Kondo , Takanobu Hori , Yasukuni Iwasaki , Nobuo Yoneyama
IPC分类号： H01J37/34
CPC分类号： C23C14/35 , H01J37/3405 , H01J37/3452
摘要： A magnet structure and the like are provided, which can reduce the labor required to make a magnet design for producing a tunnel-shaped leakage magnetic field for plasma confinement in a well-balanced manner over an obverse surface of a target, based on a quadridirectional magnetic field produced by magnetic interaction between plural magnets. The magnet structure (110) includes: inner and outer magnets (10 and 13) positioned at a reverse surface side of a target (20) to have different magnetic moment orientations for producing a first magnetic force line reaching an obverse surface (20A) of the target (20); a pair of intermediate magnets (11 and 12) positioned at the reverse surface side of the target (20) and between the inner and outer magnets (10 and 13) to have different magnetic moment orientations, for producing a second magnetic force line acting to cancel a widthwise magnetic flux density component which is produced by the first magnetic force line; and a magnetic member (24) positioned at the reverse surface side of the target (20) to guide the second magnetic force line emanating from an end surface of one of the pair of intermediate magnets (11 and 12) into an end surface of the other, the magnetic member (24) being configured to produce a magnetic force line reaching an intermediate point in a thickness direction of the target (20) in association with the inner magnet (10) or the outer magnet (13).
摘要翻译：提供了磁体结构等，其可以减少制造磁体设计所需的劳动，以便以目标的正面以良好平衡的方式产生用于等离子体约束的隧道状泄漏磁场，基于四向由多个磁体之间的磁相互作用产生的磁场。磁体结构（110）包括：位于目标（20）的反面侧的内外磁体（10和13），以具有不同的磁矩取向，用于产生到达正面（20A）的第一磁力线目标（20）; 位于目标（20）的反面侧并且在内磁体（10和13）之间的一对中间磁体（11和12）具有不同的磁矩取向，以产生作用于取消由第一磁力线产生的宽度方向磁通密度分量; 以及定位在所述靶（20）的所述反面侧的磁性构件（24），以将从所述一对中间磁体（11和12）中的一个的端面发出的所述第二磁力线引导到所述一对中间磁体另一方面，磁性构件（24）构造成产生与内磁体（10）或外磁体（13）相关联地到达靶（20）的厚度方向的中间点的磁力线。

5. 发明申请

US20100230282A1 Magnet Structure and Cathode Electrode Unit for Magnetron Sputtering, and Magnetron Sputtering System 有权
标题翻译：用于磁控溅射的磁体结构和阴极电极单元和磁控溅射系统
公开(公告)号：US20100230282A1
公开(公告)日：2010-09-16
申请号：US12067908
申请日：2006-08-23
申请人： Takahiko Kondo , Keisuke Kondo , Takanobu Hori , Yasukuni Iwasaki , Nobuo Yoneyama
发明人： Takahiko Kondo , Keisuke Kondo , Takanobu Hori , Yasukuni Iwasaki , Nobuo Yoneyama
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , H01J37/3405 , H01J37/3452
摘要： A magnet structure and the like are provided, which can reduce the labor required to make a magnet design for producing a tunnel-shaped leakage magnetic field for plasma confinement in a well-balanced manner over an obverse surface of a target, based on a quadridirectional magnetic field produced by magnetic interaction between plural magnets. The magnet structure (110) includes: inner and outer magnets (10 and 13) positioned at a reverse surface side of a target (20) to have different magnetic moment orientations for producing a first magnetic force line reaching an obverse surface (20A) of the target (20); a pair of intermediate magnets (11 and 12) positioned at the reverse surface side of the target (20) and between the inner and outer magnets (10 and 13) to have different magnetic moment orientations, for producing a second magnetic force line acting to cancel a widthwise magnetic flux density component which is produced by the first magnetic force line; and a magnetic member (24) positioned at the reverse surface side of the target (20) to guide the second magnetic force line emanating from an end surface of one of the pair of intermediate magnets (11 and 12) into an end surface of the other, the magnetic member (24) being configured to produce a magnetic force line reaching an intermediate point in a thickness direction of the target (20) in association with the inner magnet (10) or the outer magnet (L3).
摘要翻译：提供了磁体结构等，其可以减少制造磁体设计所需的劳动，以便以目标的正面以良好平衡的方式产生用于等离子体约束的隧道状泄漏磁场，基于四向由多个磁体之间的磁相互作用产生的磁场。磁体结构（110）包括：位于目标（20）的反面侧的内外磁体（10和13），以具有不同的磁矩取向，用于产生到达正面（20A）的第一磁力线目标（20）; 位于目标（20）的反面侧并且在内磁体（10和13）之间的一对中间磁体（11和12）具有不同的磁矩取向，以产生作用于取消由第一磁力线产生的宽度方向磁通密度分量; 以及定位在所述靶（20）的所述反面侧的磁性构件（24），以将从所述一对中间磁体（11和12）中的一个的端面发出的所述第二磁力线引导到所述一对中间磁体另一方面，磁性构件（24）被构造为产生与内磁体（10）或外磁体（L3）相关联地到达目标（20）的厚度方向的中间点的磁力线。

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