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1. 发明申请

US20080108160A1 Semiconductor Light Emitting Device, Its Manufacturing Method, Semiconductor Device and Its Manufacturing Method 有权
标题翻译：半导体发光器件及其制造方法，半导体器件及其制造方法
公开(公告)号：US20080108160A1
公开(公告)日：2008-05-08
申请号：US11969088
申请日：2008-01-03
申请人： Osamu Goto , Takeharu Asano , Yasuhiko Suzuki , Motonobu Takeya , Katsuyoshi Shibuya , Takashi Mizuno , Tsuyoshi Tojo , Shiro Uchida , Masao Ikeda
发明人： Osamu Goto , Takeharu Asano , Yasuhiko Suzuki , Motonobu Takeya , Katsuyoshi Shibuya , Takashi Mizuno , Tsuyoshi Tojo , Shiro Uchida , Masao Ikeda
IPC分类号： H01L33/00
CPC分类号： H01L33/0075 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01S5/0425 , H01S5/2004 , H01S5/2013 , H01S5/3201 , H01S5/34333 , H01S2301/173 , H01S2304/12
摘要： A semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.
摘要翻译：由氮化物III-V化合物半导体制成的半导体发光器件包括由In和Ga等InGaN的第一氮化物III-V化合物半导体构成的有源层; 由包含In和Ga的不同于第一氮化物III-V化合物半导体的第二氮化物III-V化合物半导体制成的中间层，例如InGaN; 以及由含有Al和Ga的第三氮化物III-V化合物半导体（例如p型AlGaN）制成的覆盖层，其以顺序接触沉积。

2. 发明授权

US06954477B2 Semiconductor laser device and fabrication method thereof 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US06954477B2
公开(公告)日：2005-10-11
申请号：US10821342
申请日：2004-04-09
申请人： Shiro Uchida , Tsuyoshi Tojo
发明人： Shiro Uchida , Tsuyoshi Tojo
IPC分类号： H01S5/042 , H01S5/22 , H01S5/00
CPC分类号： H01S5/22 , H01S5/0425 , H01S5/2213
摘要： A method of fabricating a ridge-waveguide type semiconductor laser device having a large half-value width and a high kink level is provided. First, an effective refractive index difference Δn between an effective refractive index neff1 of the ridge and an effective refractive index neff2 of a portion on each of both sides of the ridge is taken as Δn=neff1−neff2, and a ridge width is taken as W. On such an assumption, constants “a”, “b”, “c”, and “d” of the following three equations are set on X-Y coordinates (X-axis: W, Y-axis: Δn) The first equation is expressed by Δn≦a×W+b, where “a” and “b” are constants determining a kink level. The second equation is expressed by W≧c, where “c” is a constant specifying a minimum ridge width at the time of formation of the ridge. The third equation is expressed by Δn≧d, where “d” is a constant specified by a desired half-width value θpara. Then at least either of a kind and a thickness of an insulating film, a thickness of an electrode film on the insulating film, and a kind and a thickness of a portion, located on each of both the sides of the ridge, of the upper cladding layer is set in such a manner that a combination of Δn and W satisfies the above three equations.
摘要翻译：提供一种制造具有大的半值宽度和高扭结等级的脊 - 波导型半导体激光器件的方法。首先，脊的两侧的部分的有效折射率nλeff1 <！ - SIPO - >的有效折射率差值Deltan，被取为Deltan = n eff1 eff2 ，并且脊宽度取为W.在这样的假设下，常数“a”，“b”，“c 在XY坐标（X轴：W，Y轴：Deltan）上设置以下三个方程的“d”和“d”。第一方程由Deltan <= axW + b表示，其中“a”和“b” 是确定扭结水平的常数。第二方程用W> = c表示，其中“c”是指定形成脊时的最小脊宽度的常数。第三个方程由Deltan> = d表示，其中“d”是由期望的半角值θ指定的常数。然后，将绝缘膜的种类和厚度，绝缘膜上的电极膜的厚度和位于隆起的两侧的每一侧上的部分的种类和厚度中的至少一个，上部以如下方式设置包层：Deltan和W的组合满足上述三个等式。

3. 发明申请

US20060273326A1 Semiconductor Light Emitting Device, its Manufacturing Method, Semiconductor Device and Its Manufacturing Method 有权
标题翻译：半导体发光器件及其制造方法，半导体器件及其制造方法
公开(公告)号：US20060273326A1
公开(公告)日：2006-12-07
申请号：US11425595
申请日：2006-06-21
申请人： Osamu Goto , Takeharu Asano , Yasuhiko Suzuki , Motonobu Takeya , Katsuyoshi Shibuya , Takashi Mizuno , Tsuyoshi Tojo , Shiro Uchida , Masao Ikeda
发明人： Osamu Goto , Takeharu Asano , Yasuhiko Suzuki , Motonobu Takeya , Katsuyoshi Shibuya , Takashi Mizuno , Tsuyoshi Tojo , Shiro Uchida , Masao Ikeda
IPC分类号： H01L33/00
CPC分类号： H01L33/0075 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01S5/0425 , H01S5/2004 , H01S5/2013 , H01S5/3201 , H01S5/34333 , H01S2301/173 , H01S2304/12
摘要： A semiconductor light emitting device made of nitride III-V compound semiconductors includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.
摘要翻译：由氮化物III-V族化合物半导体制成的半导体发光器件包括由含有In和Ga的第一氮化物III-V化合物半导体构成的有源层，例如InGaN; 由包含In和Ga的不同于第一氮化物III-V化合物半导体的第二氮化物III-V化合物半导体制成的中间层，例如InGaN; 以及由含有Al和Ga的第三氮化物III-V化合物半导体（例如p型AlGaN）制成的覆盖层，其以顺序接触沉积。

4. 发明授权

US06711197B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US06711197B2
公开(公告)日：2004-03-23
申请号：US10120566
申请日：2002-04-11
申请人： Tsuyoshi Tojo , Shiro Uchida , Satoru Kijima
发明人： Tsuyoshi Tojo , Shiro Uchida , Satoru Kijima
IPC分类号： H01S500
CPC分类号： H01S5/22 , H01S5/0655 , H01S5/2218 , H01S5/2219 , H01S5/32341
摘要： Disclosed is a nitride based III-V group compound semiconductor laser device of ridge waveguide type with an oscillation wavelength of about 410 nm which has a low driving voltage, a high half-width value &thgr;// of a FFP in a direction horizontal to a hetero interface, and a high kink level (i.e., good light output-injected current characteristics over the high-output range). This laser device is similar in structure to the related-art semiconductor laser device except for the current constricting layer formed in a ridge. It has a stacked film composed of an SiO2 film (600 Å thick) and an amorphous Si film (300 Å thick) which are formed on the SiO2 film by vapor deposition. The stacked film covers both sides of the ridge and a p-AlGaN cladding layer extending sideward from the base of the ridge. The SiO2 film and Si film have respective thicknesses which are established such that the absorption coefficient of fundamental horizontal lateral mode is larger than the absorption coefficient of primary horizontal lateral mode. This structure results in a higher kink level, while suppressing the high-order horizontal lateral mode, a larger effective refractive index difference &Dgr;n, and a larger value of &thgr;// without the necessity for reducing the ridge width.
摘要翻译：公开了一种振荡波长约410nm的脊波导型氮化物III-V族化合物半导体激光装置，其具有低驱动电压，FFP在水平方向上的高半值宽度θ// 异质界面和高扭结水平（即在高输出范围内具有良好的光输出注入电流特性）。除了形成在脊中的电流收缩层之外，该激光装置的结构类似于现有技术的半导体激光装置。它具有由SiO 2膜（600）和通过气相沉积形成在SiO 2膜上的非晶Si膜（300）组成的叠层膜。堆叠的膜覆盖脊的两侧，并且从脊的底部向侧延伸的p-AlGaN包覆层。 SiO 2膜和Si膜具有各自的厚度，其被建立为使得基本水平横向模式的吸收系数大于初级水平横向模式的吸收系数。这种结构导致更高的扭结水平，同时抑制高阶水平横向模式，更大的有效折射率差Deltan和更大的θ//值，而不需要减小脊宽度。

5. 发明授权

US06693935B2 Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US06693935B2
公开(公告)日：2004-02-17
申请号：US09883235
申请日：2001-06-19
申请人： Tsuyoshi Tojo , Shiro Uchida
发明人： Tsuyoshi Tojo , Shiro Uchida
IPC分类号： H01S500
CPC分类号： H01S5/028 , H01S5/0213 , H01S5/0286 , H01S5/32341
摘要： A semiconductor laser includes semiconductor layers stacked on a substrate, and a pair of resonator end surfaces opposed to each other in the direction perpendicular to the stacking direction. In this semiconductor laser, a light emission side reflecting film is formed on one of the resonator end surfaces. A refractive index of the reflecting film against an emission wavelength of laser light is set to a value between an effective refractive index and a refractive index of the substrate. Another semiconductor laser includes a light emission function layer stack including a cladding layer and an active layer formed on one place of a translucent substrate; two electrodes having different polarities, which are provided on the light emission function layer stack side; and a light leakage preventive film formed on the other plane of the translucent substrate.
摘要翻译：半导体激光器包括堆叠在基板上的半导体层和在垂直于层叠方向的方向上彼此相对的一对谐振器端面。在该半导体激光器中，在一个谐振器端面上形成发光侧反射膜。相对于激光的发射波长的反射膜的折射率被设定为基板的有效折射率和折射率之间的值。另一半导体激光器包括发光功能层堆叠，其包括覆盖层和形成在透光性基板的一个位置上的有源层; 设置在发光功能层堆叠侧的具有不同极性的两个电极; 以及形成在透光性基板的另一平面上的防漏膜。

6. 发明授权

US07439546B2 Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method 有权
公开(公告)号：US07439546B2
公开(公告)日：2008-10-21
申请号：US11425595
申请日：2006-06-21
申请人： Osamu Goto , Takeharu Asano , Yasuhiko Suzuki , Motonobu Takeya , Katsuyoshi Shibuya , Takashi Mizuno , Tsuyoshi Tojo , Shiro Uchida , Masao Ikeda
发明人： Osamu Goto , Takeharu Asano , Yasuhiko Suzuki , Motonobu Takeya , Katsuyoshi Shibuya , Takashi Mizuno , Tsuyoshi Tojo , Shiro Uchida , Masao Ikeda
IPC分类号： H01L27/15 , H01L33/00
CPC分类号： H01L33/0075 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01S5/0425 , H01S5/2004 , H01S5/2013 , H01S5/3201 , H01S5/34333 , H01S2301/173 , H01S2304/12
摘要： A semiconductor light emitting device made of nitride III-V compound semiconductors includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

7. 发明授权

US07065118B2 Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US07065118B2
公开(公告)日：2006-06-20
申请号：US10720112
申请日：2003-11-25
申请人： Tsuyoshi Tojo , Shiro Uchida
发明人： Tsuyoshi Tojo , Shiro Uchida
IPC分类号： H01S5/00
CPC分类号： H01S5/028 , H01S5/0213 , H01S5/0286 , H01S5/32341
摘要： A semiconductor laser includes semiconductor layers stacked on a substrate, and a pair of resonator end surfaces opposed to each other in the direction perpendicular to the stacking direction. In this semiconductor laser, a light emission side reflecting film is formed on one of the resonator end surfaces. A refractive index of the reflecting film against an emission wavelength of laser light is set to a value between an effective refractive index and a refractive index of the substrate. Another semiconductor laser includes a light emission function layer stack including a cladding layer and an active layer formed on one place of a translucent substrate; two electrodes having different polarities, which are provided on the light emission function layer stack side; and a light leakage preventive film formed on the other plane of the translucent substrate.
摘要翻译：半导体激光器包括堆叠在基板上的半导体层和在垂直于层叠方向的方向上彼此相对的一对谐振器端面。在该半导体激光器中，在一个谐振器端面上形成发光侧反射膜。相对于激光的发射波长的反射膜的折射率被设定为基板的有效折射率和折射率之间的值。另一半导体激光器包括发光功能层堆叠，其包括覆盖层和形成在透光性基板的一个位置上的有源层; 设置在发光功能层堆叠侧的具有不同极性的两个电极; 以及形成在透光性基板的另一平面上的防漏膜。

8. 发明授权

US08460958B2 Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method 有权
标题翻译：半导体发光器件及其制造方法，半导体器件及其制造方法
公开(公告)号：US08460958B2
公开(公告)日：2013-06-11
申请号：US13080802
申请日：2011-04-06
申请人： Osamu Goto , Takeharu Asano , Yasuhiko Suzuki , Motonobu Takeya , Katsuyoshi Shibuya , Takashi Mizuno , Tsuyoshi Tojo , Shiro Uchida , Masao Ikeda
发明人： Osamu Goto , Takeharu Asano , Yasuhiko Suzuki , Motonobu Takeya , Katsuyoshi Shibuya , Takashi Mizuno , Tsuyoshi Tojo , Shiro Uchida , Masao Ikeda
IPC分类号： H01L21/00
CPC分类号： H01L33/0075 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01S5/0425 , H01S5/2004 , H01S5/2013 , H01S5/3201 , H01S5/34333 , H01S2301/173 , H01S2304/12
摘要： A method of manufacturing a semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.
摘要翻译：由氮化物III-V族化合物半导体制造的半导体发光器件的制造方法包括由含有In和Ga的第一氮化物III-V化合物半导体，例如InGaN构成的有源层; 由包含In和Ga的不同于第一氮化物III-V化合物半导体的第二氮化物III-V化合物半导体制成的中间层，例如InGaN; 以及由含有Al和Ga的第三氮化物III-V化合物半导体（例如p型AlGaN）制成的覆盖层，其以顺序接触沉积。

9. 发明申请

US20060284186A1 Semiconductor light emiting device and method of producing the same 失效
标题翻译：半导体发光装置及其制造方法
公开(公告)号：US20060284186A1
公开(公告)日：2006-12-21
申请号：US10568786
申请日：2005-06-15
申请人： Shiro Uchida , Tsuyoshi Tojo
发明人： Shiro Uchida , Tsuyoshi Tojo
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , H01S5/2231 , H01S2301/185
摘要： To provide a semiconductor light emitting device capable of improving an aspect ratio of a laser beam to make it close to a circular shape and a method of producing the same, a first conductive type first cladding layer 11, an active layer 12, and a second conductive type second cladding layer 17 having a ridge-shaped portion RD as a current narrowing structure are stacked on a substrate 10; wherein the ridge-shaped portion includes a first ridge-shaped layer 15 on the side close to said active layer and having a high bandgap and a second ridge-shaped layer 16 on the side distant from the active layer and having a low bandgap, so that the semiconductor light emitting device is obtained. By using an epitaxial growth method, a first cladding layer, active layer and second conductive type second cladding layer are formed by being stacked on the substrate, a part of the second cladding layer is processed to be a ridge-shaped portion, and the second cladding layer is formed, so that the portion to be a ridge shape includes the first ridge-shaped layer and second ridge-shaped layer.
摘要翻译：为了提供能够提高激光束的纵横比以使其接近圆形的半导体发光器件及其制造方法，第一导电类型的第一包层11，有源层12和第二导电类型具有作为电流变窄结构的脊形部分RD的导电型第二覆层17堆叠在基板10上; 其特征在于，所述脊状部在与所述有源层相邻的一侧具有第一脊状层15，在远离有源层的一侧具有高带隙和第二脊状层16，具有低带隙，因此，获得半导体发光器件。通过使用外延生长方法，通过层叠在基板上形成第一包层，有源层和第二导电型第二包层，将第二包层的一部分加工成为脊状部，第二包层形成包覆层，使得脊状部分包括第一脊形层和第二脊形层。

10. 发明授权

US06950451B2 Multi-beam semiconductor laser element 失效
标题翻译：多光束半导体激光元件
公开(公告)号：US06950451B2
公开(公告)日：2005-09-27
申请号：US10480568
申请日：2002-06-14
申请人： Tsuyoshi Tojo , Tomonori Hino , Osamu Goto , Yoshifumi Yabuki , Shinichi Ansai , Shiro Uchida , Masao Ikeda
发明人： Tsuyoshi Tojo , Tomonori Hino , Osamu Goto , Yoshifumi Yabuki , Shinichi Ansai , Shiro Uchida , Masao Ikeda
IPC分类号： H01L21/205 , H01S5/042 , H01S5/22 , H01S5/323 , H01S5/40 , H01S3/10 , H01S3/082 , H01S3/14 , H01S5/00
CPC分类号： H01S5/4031 , H01S5/0425 , H01S5/32341 , H01S5/4087
摘要： A multi-beam semiconductor laser device capable of emitting respective laser beams with uniform optical output levels and enabling easy alignment is provided. This multi-beam semiconductor laser device (40) is a GaN base multi-beam semiconductor laser device provided with four laser stripes (42A, 42B, 42C and 42D) which are capable of emitting laser beams with the same wavelength. The respective laser oscillating regions (42A to 42D) are provided with a p-type common electrode (48) on a mesa structure (46) which is formed on a sapphire substrate (44), and have active regions (50A, 50B, 50C and 50D) respectively. Two n-type electrodes (52A and 52B) are provided on an n-type GaN contact layer (54) and located as common electrodes opposite to the p-type common electrode (48) on both sides of the mesa structure (46). The distance A between the laser stripe (42A) and the laser stripe (42D) is no larger than 100 μm. The distance B1 between the laser stripe (42A) and the n-type electrode (52B) is no larger than 150 μm while the distance B2 between the laser stripe (42D) and the n-type electrode (52A) is no larger than 150 μm.
摘要翻译：提供能够发射具有均匀光输出水平的各激光束并且能够容易对准的多光束半导体激光器装置。该多光束半导体激光器件（40）是具有能够发射具有相同波长的激光束的四个激光条纹（42A，42B，42C和42D）的GaN基多光束半导体激光器件。相应的激光振荡区域（42A至42D）在形成在蓝宝石衬底（44）上的台面结构（46）上设置有p型公共电极（48），并具有活性区域（50A， 50B，50C和50D）。在n型GaN接触层（54）上设置两个n型电极（52A和52B），并且位于与台面结构（46）的两侧的p型公共电极（48）相对的公共电极）。激光条纹（42A）与激光条纹（42D）之间的距离A不大于100μm。激光条纹（42A）和n型电极（52B）之间的距离B 1 <1>不大于150μm，而激光之间的距离B 2 <2> 条纹（42D）和n型电极（52A）不大于150μm。

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