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1. 发明申请

US20090194018A1 APPARATUS AND METHOD FOR MANUFACTURING EPITAXIAL WAFER 审中-公开
标题翻译：装置及其制造方法
公开(公告)号：US20090194018A1
公开(公告)日：2009-08-06
申请号：US12354530
申请日：2009-01-15
申请人： Shinya HIGASHI , Hirotaka YANAGISAWA , Shinichi MITANI , Hironobu HIRATA
发明人： Shinya HIGASHI , Hirotaka YANAGISAWA , Shinichi MITANI , Hironobu HIRATA
IPC分类号： C30B25/10
CPC分类号： C23C16/46 , C30B25/10 , C30B25/12
摘要： An apparatus for manufacturing an epitaxial wafer, includes: a chamber; a gas inlet provided in the chamber and introducing a reaction gas into the chamber; a gas outlet provided in the chamber and exhausting the reaction gas; a rotator unit provided inside the chamber; a wafer holder provided on an upper portion of the rotator unit and holding a wafer; an inner heater provided inside the rotator unit; and an outer heater provided between the rotator unit and an inner wall of the chamber.
摘要翻译：一种用于制造外延晶片的装置，包括：腔室; 设置在所述室中的气体入口并将反应气体引入所述室中; 气体出口，设置在室中并排出反应气体; 设置在所述腔室内的旋转器单元; 设置在旋转体单元的上部并保持晶片的晶片保持器; 设置在旋转体单元内的内部加热器; 以及设置在所述转子单元和所述室的内壁之间的外部加热器。

2. 发明申请

US20080311294A1 VAPOR-PHASE GROWTH APPARATUS AND VAPOR-PHASE GROWTH METHOD 审中-公开
标题翻译：蒸汽相生长装置和蒸汽相生长方法
公开(公告)号：US20080311294A1
公开(公告)日：2008-12-18
申请号：US12139172
申请日：2008-06-13
申请人： Hideki ITO , Hironobu HIRATA , Shinichi MITANI
发明人： Hideki ITO , Hironobu HIRATA , Shinichi MITANI
IPC分类号： C23C16/44 , C23C16/00
CPC分类号： C23C16/45504 , C23C16/4401 , C30B25/14
摘要： There is provided a vapor-phase growth apparatus which reduces particle generation and an adhering material in epitaxial growth to make it easy to improve the productivity. The vapor-phase growth apparatus includes a gas supply port formed in a top portion of a reactor, a gas distribution plate arranged in the reactor, a discharge port formed in a bottom portion of the reactor, at a head portion and which covers a side wall of the reactor, an annular holder on which a semiconductor wafer is placed. A separation distance between the gas distribution plate and the annular holder is set such that a film forming gas which flows downward from the gas supply port through the gas distribution plate is in a laminar flow state on a surface of the semiconductor wafer or a surface of the annular holder.
摘要翻译：提供了一种气相生长装置，其减少了外延生长中的颗粒产生和附着材料，从而容易提高生产率。气相生长装置包括形成在反应器的顶部的气体供给口，设置在反应器中的气体分配板，形成在反应器的底部的排出口，头部，并且覆盖侧反应器的壁，其上放置半导体晶片的环形保持器。气体分配板和环形保持器之间的间隔距离被设定为使得从气体供给口向下流过气体分配板的成膜气体在半导体晶片的表面上处于层流状态，环形支架。

3. 发明申请

US20080236477A1 VAPOR PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD 有权
标题翻译：蒸气相生长装置和蒸汽相生长方法
公开(公告)号：US20080236477A1
公开(公告)日：2008-10-02
申请号：US12053657
申请日：2008-03-24
申请人： Hideki ITO , Shinichi MITANI
发明人： Hideki ITO , Shinichi MITANI
IPC分类号： C30B25/16 , C30B35/00
CPC分类号： C30B25/10 , C23C16/4586 , C30B35/00 , Y10S117/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A vapor phase growth apparatus and a vapor phase growth method improve the uniformity of film formed are provided. The vapor phase growth apparatus includes a chamber, a rotatable holder having a susceptor, an internal heater and an external heater which are arranged in the holder and heat the wafer from the bottom surface, an gas-pipe which is arranged to face the internal heater and sprays a cooling gas, and a temperature measuring unit which is arranged outside the chamber and measures the surface temperature of the wafer. In this manner, a position of a singular point of temperature which is an overheated portion generated on the wafer can be recognized. The singular point of temperature is locally cooled to make it possible to improve the uniformity of a temperature distribution in plane of the wafer.
摘要翻译：提供了一种提高膜形成均匀性的气相生长装置和气相生长方法。气相生长装置包括：室，具有基座的可旋转保持器，内部加热器和外部加热器，其布置在保持器中并从底表面加热晶片;气体管，其布置成面对内部加热器并喷射冷却气体，以及温度测量单元，其布置在室外并测量晶片的表面温度。以这种方式，可以识别在晶片上产生的过热部分的单个温度点的位置。温度的单个点被局部冷却，从而可以提高晶片的平面内的温度分布的均匀性。

4. 发明申请

US20160047351A1 CONTROL APPARATUS FOR INTERNAL COMBUSTION ENGINE 审中-公开
标题翻译：内燃机控制装置
公开(公告)号：US20160047351A1
公开(公告)日：2016-02-18
申请号：US14780266
申请日：2014-03-20
申请人： Susumu HASHIMOTO , Shinichi MITANI
发明人： Susumu HASHIMOTO , Shinichi MITANI
IPC分类号： F02P5/145
CPC分类号： F02P5/145 , F02D37/02
摘要： In a control apparatus for an internal combustion engine, which implements temperature increasing processing in which an ignition timing is retarded to a predetermined target ignition timing in order to increase an exhaust gas temperature, a period required for an actual ignition timing to become equal to the target ignition timing following the start of retardation of the ignition timing during the temperature increasing processing is lengthened when a startup torque, which is a torque generated by the internal combustion engine during a startup process, is small.
摘要翻译：在用于内燃机的控制装置中，实现点火正时延迟到预定目标点火正时以增加排气温度的升温处理，实际点火正时所需的时间变为等于当在启动过程中由内燃机产生的扭矩的启动转矩小时，在升温处理期间开始延迟点火正时之后的目标点火正时延长。

5. 发明申请

US20090269490A1 COATING APPARATUS AND COATING METHOD 审中-公开
标题翻译：涂装和涂装方法
公开(公告)号：US20090269490A1
公开(公告)日：2009-10-29
申请号：US12425148
申请日：2009-04-16
申请人： Yoshikazu MORIYAMA , Hideaki NISHIKAWA , Masayoshi YAJIMA , Hiroshi FURUTANI , Shinichi MITANI , Michio NISHIBAYASHI
发明人： Yoshikazu MORIYAMA , Hideaki NISHIKAWA , Masayoshi YAJIMA , Hiroshi FURUTANI , Shinichi MITANI , Michio NISHIBAYASHI
IPC分类号： C23C16/44 , B05C11/00 , B05D3/12
CPC分类号： H01L21/68785 , C23C16/4412 , C23C16/4584 , C23C16/4586 , H01L21/67109 , H01L21/6838 , H01L21/68735
摘要： An object of the present invention is to provide a coating apparatus in which the substrate can be reliably rotated at high speed. Another object of the invention is to provide a coating method of forming a coating on a substrate while reliably rotating it at high speed. A coating apparatus includes a susceptor for supporting a silicon wafer, and a rotating portion for rotating the susceptor. The rotating portion is covered on top with the susceptor to form a P2 region. The contact surface of the susceptor with the silicon wafer has a plurality of holes therein. The silicon wafer is attached to the susceptor by evacuating gas from the P2 region.
摘要翻译：本发明的目的在于提供一种能够高速可靠地旋转基板的涂布装置。本发明的另一个目的是提供一种在可靠地高速旋转基板的同时在基板上形成涂层的涂布方法。涂覆装置包括用于支撑硅晶片的基座和用于旋转基座的旋转部分。旋转部分在顶部被基座覆盖以形成P2区域。具有硅晶片的基座的接触面在其中具有多个孔。通过从P2区域排出气体将硅晶片附接到基座。

6. 发明申请

US20120244685A1 Manufacturing Apparatus and Method for Semiconductor Device 审中-公开
标题翻译：半导体器件的制造装置和方法
公开(公告)号：US20120244685A1
公开(公告)日：2012-09-27
申请号：US13421901
申请日：2012-03-16
申请人： Kunihiko SUZUKI , Shinichi MITANI
发明人： Kunihiko SUZUKI , Shinichi MITANI
IPC分类号： H01L21/20 , C23C16/52 , C23C16/455
CPC分类号： H01L21/67017 , C23C16/24 , C23C16/45523 , C23C16/45561 , H01L21/6719
摘要： A semiconductor manufacturing apparatus includes: a plurality of reaction chambers into which wafers are introduced and deposition process is performed; a material gas supply mechanism that includes a plurality of material gas supply lines that respectively supply a material gas to the plurality of reaction chambers and a flow rate control mechanism that controls a flow rate of the marital gas in the material gas supply lines; a carrier gas supply mechanism that includes a plurality of carrier gas supply lines that respectively supplies a carrier gas into the plurality of reaction chambers; and a material gas switching mechanism that intermittently opens and closes the plurality of material gas supply lines respectively so that at least one of the plurality of material gas supply lines comes to be in an opened state at a same time, and sequentially switches the reaction chamber to which the material gas is supplied.
摘要翻译：半导体制造装置包括：多个反应室，其中引入晶片并进行沉积处理; 材料气体供给机构，其包括分别向多个反应室供给原料气体的多个原料气体供给管线和控制所述原料气体供给管路中的所述结婚气体的流量的流量控制机构; 载气供给机构，其包括分别将载气供给到所述多个反应室中的多个载气供给管线; 以及分别间歇地打开和关闭多个原料气体供给管线的材料气体切换机构，使得多个原料气体供给管线中的至少一个同时进入打开状态，并且依次切换反应室供应原料气体。

7. 发明申请

US20100248458A1 COATING APPARATUS AND COATING METHOD 审中-公开
标题翻译：涂装和涂装方法
公开(公告)号：US20100248458A1
公开(公告)日：2010-09-30
申请号：US12730571
申请日：2010-03-24
申请人： Shinichi MITANI , Kunihiko SUZUKI , Toshiro TSUMORI
发明人： Shinichi MITANI , Kunihiko SUZUKI , Toshiro TSUMORI
IPC分类号： H01L21/205 , C23C16/34
CPC分类号： C30B25/08 , C23C16/54 , C30B25/16 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262
摘要： The present invention provides a coating apparatus capable of efficiently performing a deposition process and also provides an efficient coating method.A coating apparatus 1 for performing a deposition process on substrates W placed in a coating chamber by metalorganic chemical vapor deposition includes three or more coating chambers, e.g., a first coating chamber 2, a second coating chamber 102, and a third coating chamber 202. These coating chambers are configured such that each coating chamber is controlled independently of the other coating chambers to form a different film on the substrates W by controlling at least the composition of the material gas, the flow rate of material gas, the temperature, and the pressure in the coating chamber. A cleaning unit 5 is provided outside the coating chambers 2, 102, 202 to clean the susceptor after the deposition process.
摘要翻译：本发明提供能够有效地进行沉积工艺的涂覆设备，并且还提供有效的涂覆方法。用于通过金属有机化学气相沉积在衬底W上进行沉积处理的涂覆设备1包括三个或更多个涂覆室，例如第一涂覆室2，第二涂覆室102和第三涂覆室202。这些涂布室被构造成使得每个涂布室被独立于其它涂布室控制，以通过至少控制材料气体的组成，材料气体的流速，温度和温度来在基板W上形成不同的膜涂层室内的压力。清洁单元5设置在涂布室2,102,202的外侧，以在沉积处理之后清洁基座。

8. 发明申请

US20110064885A1 APPARATUS AND METHOD FOR FILM DEPOSITION 审中-公开
标题翻译：电影沉积的装置和方法
公开(公告)号：US20110064885A1
公开(公告)日：2011-03-17
申请号：US12881516
申请日：2010-09-14
申请人： Kunihiko SUZUKI , Shinichi MITANI
发明人： Kunihiko SUZUKI , Shinichi MITANI
IPC分类号： B05D3/02 , C23C16/00
CPC分类号： C23C16/4401 , C23C16/46
摘要： The deposition apparatus 100 comprises: a heater 121 for heating a silicon wafer 101; electrically-conductive busbars 123 for supporting the heater 121; electrode assemblies 107 for supporting the busbars 123 and conducting electricity to the heater 121, the electrode assemblies 107 each having a hollow rod electrode 108 with upper and lower openings; and a columnar support 105 for supporting the rod electrodes 108 of the electrode assemblies 107. Wafer heating by the heater 121 is conducted while a purge gas flows through the inside of the rod electrodes 108 from the lower openings of the rod electrodes 108, so that the electrode assemblies 107 cannot be heated to a high temperature.
摘要翻译：沉积装置100包括：用于加热硅晶片101的加热器121; 用于支撑加热器121的导电汇流条123; 用于支撑汇流条123并向加热器121传导电力的电极组件107，每个电极组件107具有带有上开口和下开口的中空棒电极108; 以及用于支撑电极组件107的杆电极108的柱状支撑件105.由吹扫气体从棒状电极108的下部开口流过棒状电极108的内部时，进行加热器121的晶片加热，电极组件107不能被加热到高温。

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