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    • 6. 发明授权
    • Semiconductor pressure sensor
    • 半导体压力传感器
    • US07219554B2
    • 2007-05-22
    • US11225019
    • 2005-09-14
    • Seizo FujimotoTakafumi HaraMasaaki Taruya
    • Seizo FujimotoTakafumi HaraMasaaki Taruya
    • G01L9/00
    • G01L9/0055G01L19/069
    • A semiconductor pressure sensor is not influenced by a charged object in a fluid to be measured or an electric field from the outside, so satisfactory sensitivity and accuracy can be ensured. The semiconductor pressure sensor is provided with a diaphragm 4 that responds to the pressure of the fluid to be measured. The diaphragm includes a silicon substrate with piezoresistive elements, which together constitute a bridge circuit, being embedded therein, and a shield film for electromagnetic shielding formed on a surface of the silicon substrate at a side thereof at which the fluid to be measured is in contact with the silicon substrate. The shield film is electrically connected to the silicon substrate so as to have the same potential as that of the silicon substrate.
    • 半导体压力传感器不受受测流体中的带电物体或来自外部的电场的影响,因此可以确保令人满意的灵敏度和精度。 半导体压力传感器设置有响应待测流体的压力的隔膜4。 隔膜包括具有压阻元件的硅衬底,它们共同构成嵌入其中的桥接电路,以及形成在硅衬底的表面上的用于电磁屏蔽的屏蔽膜,在该表面上,被测量流体接触 与硅衬底。 屏蔽膜与硅衬底电连接以具有与硅衬底相同的电位。
    • 7. 发明申请
    • Semiconductor pressure sensor
    • 半导体压力传感器
    • US20060278012A1
    • 2006-12-14
    • US11225019
    • 2005-09-14
    • Seizo FujimotoTakafumi HaraMasaaki Taruya
    • Seizo FujimotoTakafumi HaraMasaaki Taruya
    • G01L9/00
    • G01L9/0055G01L19/069
    • A semiconductor pressure sensor is not influenced by a charged object in a fluid to be measured or an electric field from the outside, so satisfactory sensitivity and accuracy can be ensured. The semiconductor pressure sensor is provided with a diaphragm 4 that responds to the pressure of the fluid to be measured. The diaphragm includes a silicon substrate with piezoresistive elements, which together constitute a bridge circuit, being embedded therein, and a shield film for electromagnetic shielding formed on a surface of the silicon substrate at a side thereof at which the fluid to be measured is in contact with the silicon substrate. The shield film is electrically connected to the silicon substrate so as to have the same potential as that of the silicon substrate.
    • 半导体压力传感器不受受测流体中的带电物体或来自外部的电场的影响,因此可以确保令人满意的灵敏度和精度。 半导体压力传感器设置有响应待测流体的压力的隔膜4。 隔膜包括具有压阻元件的硅衬底,它们共同构成嵌入其中的桥接电路,以及形成在硅衬底的表面上的用于电磁屏蔽的屏蔽膜,在该表面上,被测量流体接触 与硅衬底。 屏蔽膜与硅衬底电连接以具有与硅衬底相同的电位。
    • 8. 发明授权
    • Semiconductor angular velocity determining device
    • 半导体角速度测定装置
    • US06003372A
    • 1999-12-21
    • US742490
    • 1996-11-01
    • Yuji KawakamiTakafumi HaraMasaaki Taruya
    • Yuji KawakamiTakafumi HaraMasaaki Taruya
    • G01C19/56G01C19/5663G01D9/04
    • G01C19/5642
    • A semiconductor angular velocity determining device includes a piezoelectric substance, a first substrate 21 disposed on the piezoelectric substance, a detector main body disposed on the first substrate 21 and a second substrate for holding the detector main body in cooperation with the first substrate 21 therebetween. The detector main body includes an oscillator 27 having a linear beam portion 26 with a one end 26a of the beam portion 26 being directly fixed to the first substrate 21. Further, the other end 26b of the beam portion 26 draws an elliptical locus in response to the combined force resulting from a force from the piezoelectric substance for producing oscillation along the plane of the first substrate 21 and a Coriolis force acting on the first substrate 21 in a perpendicular direction. With this arrangement, there can be obtained the semiconductor angular velocity determining device capable of improving a determining sensitivity and a determining accuracy.
    • 半导体角速度确定装置包括压电体,设置在压电体上的第一基板21,设置在第一基板21上的检测器主体和与第一基板21配合保持检测器主体的第二基板。 检测器主体包括具有直线束部分26的振荡器27,其中梁部分26的一端26a直接固定到第一基板21.此外,梁部分26的另一端26b响应地绘制椭圆轨迹 与来自用于产生沿着第一基板21的平面的振荡的压电体的力产生的合力,以及沿垂直方向作用在第一基板21上的科里奥利力。 利用这种布置,可以获得能够提高确定灵敏度和确定精度的半导体角速度确定装置。