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1. 发明授权

US07372496B2 Solid-state image capturing device and imaging apparatus using the same 失效
标题翻译：固体摄像装置及使用其的成像装置
公开(公告)号：US07372496B2
公开(公告)日：2008-05-13
申请号：US10329780
申请日：2002-12-27
申请人： Shinji Uya , Yong Gwan Kim , Tomohiro Sakamoto
发明人： Shinji Uya , Yong Gwan Kim , Tomohiro Sakamoto
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H01L27/14831 , H01L27/14812 , H04N5/3559 , H04N5/374 , H04N5/378 , H04N9/045
摘要： An n-type semiconductor substrate 11 has a p-type well 12 in which are formed a charge transfer channel 13, a flowing diffusion region 14 made of an n-type impurity region, an n-type buried region 16 and a reset drain region 15. Transfer gates 51 and 52 of a horizontal CCD and an output gate 41 are formed on the surface of the charge transfer channel 13, with an insulation film 20 interposed; reset electrodes 31 and 32 are formed on the surface of the buried region 16, again with the insulation film 20 interposed. The floating diffusion region 14 is connected to a source follower circuit 6. The reset electrodes 31 and 32 are provided adjacent to each other in the channel direction of a reset gate section 3 and can be driven independently of each other.
摘要翻译： n型半导体基板11具有p型阱12，其中形成有电荷传输沟道13，由n型杂质区构成的流动扩散区14，n型掩埋区16和复位漏极区 15。水平CCD和输出门41的转移门51和52形成在电荷转移通道13的表面上，绝缘膜20被插入; 复位电极31,32形成在掩埋区域16的表面上，再次插入绝缘膜20。浮动扩散区域14连接到源极跟随器电路6。复位电极31和32在复位栅极部3的沟道方向上彼此相邻地设置，并且可以彼此独立地驱动。

2. 发明授权

US06507055B1 Solid state image pickup device and its manufacture 失效
标题翻译：固态摄像装置及其制造
公开(公告)号：US06507055B1
公开(公告)日：2003-01-14
申请号：US09633265
申请日：2000-08-04
申请人： Yong Gwan Kim
发明人： Yong Gwan Kim
IPC分类号： H01L27148
CPC分类号： H01L27/14843 , H01L27/14683 , H01L27/14806
摘要： A solid state image pickup device is provided, that improves the transfer efficiency of charges in the horizontal charge transfer path by implementing a selectively arranged matrix of semiconductor layers with differing conductivity type, impurity concentration and orientation. Further, the solid state image pickup device prevents the lowering of the transfer efficiency of charges transferred from the vertical charge transfer path to the horizontal charge transfer path.
摘要翻译：提供了一种固态图像拾取装置，其通过实现具有不同导电类型，杂质浓度和取向的选择性排列的半导体矩阵来提高水平电荷转移路径中电荷的转移效率。此外，固态图像拾取装置防止从垂直电荷传送路径传送到水平电荷传送路径的电荷的传送效率降低。

3. 发明授权

US06496223B1 Solid-state image sensor 失效
标题翻译：固态图像传感器
公开(公告)号：US06496223B1
公开(公告)日：2002-12-17
申请号：US08953511
申请日：1997-10-17
申请人： Yong Gwan Kim
发明人： Yong Gwan Kim
IPC分类号： H04N5335
CPC分类号： H01L29/76816 , H01L27/14806
摘要： A solid-state image sensor in which an interface area between a vertical charge coupled device (VCCD) and a horizontal charge coupled device (HCCD) is formed under the HCCD, thereby maximizing charge-transferring efficiency is disclosed, including a substrate; a well formed in the substrate; a first impurity region formed in the well under the VCCD and the HCCD; and second impurity regions selectively formed in the first impurity region to have a border from the first impurity region under the HCCD, wherein the second impurity regions have a different ion concentration from the first impurity region.
摘要翻译：一种固态图像传感器，其中在HCCD之下形成垂直电荷耦合器件（VCCD）和水平电荷耦合器件（HCCD）之间的界面区域，从而最大化电荷转移效率，包括衬底; 在基底中形成良好的; 形成在VCCD和HCCD下的阱中的第一杂质区; 以及选择性地形成在所述第一杂质区域中的与所述HCCD之下的所述第一杂质区域具有边界的第二杂质区域，其中所述第二杂质区域具有与所述第一杂质区域不同的离子浓度。

4. 发明授权

US6054341A Method of manufacturing charge-coupled device having different light-receiving region and charge-isolating layer structures 失效
标题翻译：制造具有不同光接收区域和电荷隔离层结构的电荷耦合器件的方法
公开(公告)号：US6054341A
公开(公告)日：2000-04-25
申请号：US17800
申请日：1998-02-03
申请人： Yong Gwan Kim
发明人： Yong Gwan Kim
IPC分类号： H01L29/762 , H01L21/339 , H01L27/146 , H01L27/148 , H01L31/0352 , H04N5/335 , H04N5/361 , H04N5/365 , H04N5/369 , H04N5/372
CPC分类号： H01L27/14689 , H01L27/14812 , H01L27/14825 , H01L31/03529 , Y02E10/50
摘要： A charge-coupled device includes a first P-type well formed in an N-type semiconductor substrate, a second P-type well formed repeatedly the first P-type well region, a charge-transfer region (BCCD) formed within the second P-type well region, an N-type photodiode region (PDN) formed in the upper portion of the first P-type well so as to be isolated from the charge-transfer region, a first high concentration P-type photodiode region (first PDP.sup.+ region) formed in the upper surface of the N-type photodiode region excluding the charge-transfer region and serving as a charge-isolating layer, first and second poly-gates formed repeatedly on the charge-transfer region, and a second high concentration self aligned P-type photodiode region (second PDP.sup.+ region) formed in the surface of the first high concentration P-type photodiode region. The charge-isolating region is thin to extend the potential pocket of each light-conversion PDN region.
摘要翻译：电荷耦合器件包括在N型半导体衬底中形成的第一P型阱，重复形成第一P型阱区的第二P型阱，形成在第二P型阱区内的电荷转移区（BCCD）型阱区，形成在第一P型阱的上部以与电荷转移区隔离的N型光电二极管区（PDN），第一高浓度P型光电二极管区（第一PDP + 区域）形成在除了电荷转移区域之外的N型光电二极管区域的上表面中并且用作电荷隔离层，在电荷转移区域上重复形成的第一和第二多晶硅栅极以及第二高浓度自身形成在第一高浓度P型光电二极管区域的表面中的P型光电二极管区域（第二PDP +区域）。电荷隔离区域很薄，以延伸每个光转换PDN区域的势阱。

5. 发明授权

US5729233A Analog/digital converter using a charge coupled device with poly-gates relatively sized 失效
标题翻译：模/数转换器采用电荷耦合器件，具有多门相对大小
公开(公告)号：US5729233A
公开(公告)日：1998-03-17
申请号：US532100
申请日：1995-09-22
申请人： Yong Gwan Kim
发明人： Yong Gwan Kim
IPC分类号： H03M1/36 , H03M1/38
CPC分类号： H03M1/368
摘要： An analog-to-digital (A/D) converter using a charge-coupled device (CCD) for converting analog data to digital data, the CCD including a plurality of gates with potential wells, the number of gates corresponding to a number of bits of the digital data, and a size of each potential well corresponding to a given significant bit and being one-half the size of the potential well corresponding to the next most significant bit. The charges of an input analog signal are transmitted to respective potential wells. A plurality of driving circuits apply a voltage to the respective potential wells and output the charges stored in the respective potential wells as digital data.
摘要翻译：一种使用电荷耦合器件（CCD）将模拟数据转换为数字数据的模数（A / D）转换器，CCD包括具有势阱的多个门，与多个位对应的门数的数字数据，以及对应于给定有效位的每个势阱的大小，并且是对应于下一最高有效位的势阱的大小的一半。输入模拟信号的电荷被发送到相应的电位阱。多个驱动电路向各个电位阱施加电压，并输出存储在各个电位阱中的电荷作为数字数据。

6. 发明授权

US06441409B1 Dual-line type charge transfer device 失效
标题翻译：双线式电荷转移装置
公开(公告)号：US06441409B1
公开(公告)日：2002-08-27
申请号：US09298845
申请日：1999-04-26
申请人： Yong Gwan Kim
发明人： Yong Gwan Kim
IPC分类号： H01L27148
CPC分类号： H01L27/14812 , H01L29/768
摘要： A charge transfer device which comprises vertical charge transfer devices which transfer charges in the vertical direction, first and second horizontal charge transfer devices which transfer the charges from the vertical charge transfer devices in the horizontal direction, and a shift gate which controls the charges from the vertical charge transfer devices to be supplied to one the first horizontal charge device or the second horizontal charge transfer device, wherein the first. horizontal charge transfer device is a semiconductor region between the vertical charge transfer devices and the second horizontal charge transfer device and includes highly-doped regions having tapered portions whose one ends near the second horizontal charge transfer device are broader than another ends near the vertical charge transfer devices.
摘要翻译：一种电荷转移装置，包括在垂直方向上传送电荷的垂直电荷转移装置，在水平方向上从垂直电荷转移装置传送电荷的第一和第二水平电荷转移装置，以及控制来自垂直电荷转移装置被提供给第一水平充电装置或第二水平电荷转移装置中的一个，其中第一水平充电装置或第二水平电荷转移装置。水平电荷转移装置是垂直电荷转移装置和第二水平电荷转移装置之间的半导体区域，并且包括具有锥形部分的高度掺杂区域，其一端靠近第二水平电荷转移装置比在垂直电荷转移附近的另一端更宽设备。

7. 发明授权

US06337495B1 Solid-state image pickup device 失效
标题翻译：固态图像拾取装置
公开(公告)号：US06337495B1
公开(公告)日：2002-01-08
申请号：US09588228
申请日：2000-06-06
申请人： Yong Gwan Kim
发明人： Yong Gwan Kim
IPC分类号： H01L27148
CPC分类号： H01L27/14887 , H01L27/14818 , H01L27/14843 , H01L27/14868
摘要： In forming a photodiode by forming a burying layer on a charge accumulation region, the readout gate channel for the photodiode is separated from a high impurity concentration region of the burying layer of the photodiode, and at least a partial area of the high impurity concentration region is separated from the channel stopper region of the photodiode. Noises of a solid-state image pickup device using buried type photodiodes can be reduced.
摘要翻译：在通过在电荷累积区域上形成掩埋层来形成光电二极管的情况下，将光电二极管的读出栅极通道与光电二极管的掩埋层的高杂质浓度区域分开，并且高浓度区域的至少一部分区域与光电二极管的通道停止区域分离。可以减少使用掩埋式光电二极管的固态摄像装置的噪声。

8. 发明授权

US06806904B1 Solid-state image pickup device 失效
标题翻译：固态图像拾取装置
公开(公告)号：US06806904B1
公开(公告)日：2004-10-19
申请号：US09639876
申请日：2000-08-17
申请人： Yong Gwan Kim
发明人： Yong Gwan Kim
IPC分类号： H04N5335
CPC分类号： H01L27/14843 , H01L27/14621 , H01L27/14627 , H01L27/14812 , H04N5/372 , H04N5/3728
摘要： A solid-state image pickup device in which many photoelectric converters are arranged in a shifted-pixel layout includes a vertical charge transfer path whose width is larger in a region in which an isolation area is disposed on both sides of the transfer path than in a region in which the isolation area is arranged on only one side thereof. This prevents an event in which the transfer efficiency and the saturation output of charge in the vertical charge transfer path are locally changed by the narrow channel effect.
摘要翻译：其中许多光电转换器以偏移像素布局布置的固态图像拾取装置包括垂直电荷传输路径，其宽度在传输路径的两侧设置隔离区域的区域中的宽度大于其中隔离区域仅布置在其一侧上的区域。这防止了通过窄通道效应局部地改变垂直电荷传输路径中的电荷的传输效率和饱和输出的事件。

9. 发明授权

US6118143A Solid state image sensor 失效
标题翻译：固态图像传感器
公开(公告)号：US6118143A
公开(公告)日：2000-09-12
申请号：US038240
申请日：1998-03-11
申请人： Yong Gwan Kim
发明人： Yong Gwan Kim
IPC分类号： H01L27/146 , H01L27/148
CPC分类号： H01L27/14825
摘要： A solid state image sensor includes a photodiode, a vertical charge coupled device positioned to a side of the photodiode for transmitting charges generated in the photodiode, a first polygate extending in a horizontal direction and partly overlapping the vertical charge coupled device, and a second polygate extending in a horizontal direction, partly overlapping the vertical charge coupled device and having a second polygate extension, wherein the second polygate extension extends for substantially an entire length of the side of the photodiode.
摘要翻译：固态图像传感器包括光电二极管，位于光电二极管侧的用于传输在光电二极管中产生的电荷的垂直电荷耦合器件，在水平方向上延伸并部分地与垂直电荷耦合器件重叠的第一多晶硅栅极和第二多晶硅栅极在水平方向上延伸，部分地与垂直电荷耦合器件重叠并且具有第二多晶硅延伸部分，其中第二多晶硅延伸延伸延伸到光电二极管侧面的大致整个长度。

10. 发明授权

US5821574A Charge-coupled device having different light-receiving region and charge isolation layer structures 失效
标题翻译：具有不同光接收区域和电荷隔离层结构的电荷耦合器件
公开(公告)号：US5821574A
公开(公告)日：1998-10-13
申请号：US762845
申请日：1996-12-10
申请人： Yong Gwan Kim
发明人： Yong Gwan Kim
IPC分类号： H01L29/762 , H01L21/339 , H01L27/146 , H01L27/148 , H01L31/0352 , H04N5/335 , H04N5/361 , H04N5/365 , H04N5/369 , H04N5/372 , H01L29/768
CPC分类号： H01L27/14689 , H01L27/14812 , H01L27/14825 , H01L31/03529 , Y02E10/50
摘要： A charge-coupled device includes a first P-type well formed in an N-type semiconductor substrate, a second P-type well formed repeatedly the first P-type well region, a charge-transfer region (BCCD) formed within the second P-type well region, an N-type photodiode region (PDN) formed in the upper portion of the first P-type well so as to be isolated from the charge-transfer region, a first high concentration P-type photodiode region (first PDP.sup.+ region) formed in the upper surface of the N-type photodiode region excluding the charge-transfer region and serving as a charge-isolating layer, first and second poly-gates formed repeatedly on the charge-transfer region, and a second high concentration self aligned P-type photodiode region (second PDP.sup.+ region) formed in the surface of the first high concentration P-type photodiode region. The charge-isolating region is thin to extend the potential pocket of each light-conversion PDN region.
摘要翻译：电荷耦合器件包括在N型半导体衬底中形成的第一P型阱，重复形成第一P型阱区的第二P型阱，形成在第二P型阱区内的电荷转移区（BCCD）型阱区，形成在第一P型阱的上部以与电荷转移区隔离的N型光电二极管区（PDN），第一高浓度P型光电二极管区（第一PDP + 区域）形成在除了电荷转移区域之外的N型光电二极管区域的上表面中并且用作电荷隔离层，在电荷转移区域上重复形成的第一和第二多晶硅栅极以及第二高浓度自身形成在第一高浓度P型光电二极管区域的表面中的P型光电二极管区域（第二PDP +区域）。电荷隔离区域很薄，以延伸每个光转换PDN区域的势阱。

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