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    • 1. 发明申请
    • CONTINUOUS COPPER ELECTROPLATING METHOD
    • 连续电镀方法
    • US20090026083A1
    • 2009-01-29
    • US12179352
    • 2008-07-24
    • Shinji TACHIBANAKoji ShimizuTomohiro KawaseNaoyuki OmuraToshihisa IsonoKazuyoshi Nishimoto
    • Shinji TACHIBANAKoji ShimizuTomohiro KawaseNaoyuki OmuraToshihisa IsonoKazuyoshi Nishimoto
    • C25D21/18
    • C25D21/18
    • A continuous copper electroplating method wherein copper is continuously plated on a workpiece to be placed in a plating vessel accommodating a copper sulfate plating bath containing organic additives by use of a soluble or insoluble anode and a workpiece as a cathode, the method including overflowing the plating bath from the plating vessel in an lo overflow vessel under which the plating bath in the overflow vessel is returned to the plating vessel, providing an oxidative decomposition vessel, and returning a plating bath from the oxidative decomposition vessel through the overflow vessel to the plating vessel to circulate the plating bath between the plating vessel and oxidative decomposition vessel, and metallic copper is immersed in the plating bath in the oxidative decomposition vessel and exposed to air bubbling, so that decomposed/degenerated organic products formed by decomposition or degeneration produced during the copper electroplating can be oxidatively decomposed.
    • 一种连续铜电镀方法,其中铜连续地镀在工件上,以通过使用可溶性或不溶性阳极和工件作为阴极而放置在容纳含有有机添加剂的硫酸铜电镀液的电镀槽中,该方法包括使镀层溢出 在溢流容器中从电镀容器中洗涤,溢流容器内的电镀槽返回到电镀槽中,提供氧化分解容器,并将来自氧化分解容器的电镀槽通过溢流容器返回到电镀容器 使电镀槽和氧化分解容器之间的电镀槽循环,将金属铜浸入氧化分解容器中的电镀槽中,暴露于鼓泡状态,使得在铜中产生的分解或退化形成的分解/退化的有机产物 电镀可能被氧化分解。
    • 2. 发明授权
    • Continuous copper electroplating method
    • 连续铜电镀方法
    • US07988842B2
    • 2011-08-02
    • US12179352
    • 2008-07-24
    • Shinji TachibanaKoji ShimizuTomohiro KawaseNaoyuki OmuraToshihisa IsonoKazuyoshi Nishimoto
    • Shinji TachibanaKoji ShimizuTomohiro KawaseNaoyuki OmuraToshihisa IsonoKazuyoshi Nishimoto
    • C25D21/18C25B9/00
    • C25D21/18
    • A continuous copper electroplating method wherein copper is continuously plated on a workpiece to be placed in a plating vessel accommodating a copper sulfate plating bath containing organic additives by use of a soluble or insoluble anode and a workpiece as a cathode, the method including overflowing the plating bath from the plating vessel in an overflow vessel under which the plating bath in the overflow vessel is returned to the plating vessel, providing an oxidative decomposition vessel, and returning a plating bath from the oxidative decomposition vessel through the overflow vessel to the plating vessel to circulate the plating bath between the plating vessel and oxidative decomposition vessel, and metallic copper is immersed in the plating bath in the oxidative decomposition vessel and exposed to air bubbling, so that decomposed/degenerated organic products formed by decomposition or degeneration produced during the copper electroplating can be oxidatively decomposed.
    • 一种连续铜电镀方法,其中铜连续地镀在工件上,以通过使用可溶性或不溶性阳极和工件作为阴极而放置在容纳含有有机添加剂的硫酸铜电镀液的电镀槽中,该方法包括使镀层溢出 在溢流容器中从电镀槽中洗涤,在溢流容器中将溢流容器中的电镀液返回到电镀槽中,提供氧化分解容器,并将来自氧化分解容器的电镀槽通过溢流容器返回到电镀槽 在电镀槽和氧化分解容器之间循环电镀槽,将金属铜浸入氧化分解容器中的电镀槽中,暴露于鼓泡状态,从而在铜电镀期间产生的分解/退化的有机产物 可以氧化分解。
    • 3. 发明授权
    • Electrolytic copper plating process
    • 电解镀铜工艺
    • US07892411B2
    • 2011-02-22
    • US12187918
    • 2008-08-07
    • Shinji TachibanaTomohiro KawaseNaoyuki OmuraToshihisa IsonoKoji Shimizu
    • Shinji TachibanaTomohiro KawaseNaoyuki OmuraToshihisa IsonoKoji Shimizu
    • C25D21/18C25D3/38
    • C25D3/38C25D21/16H05K3/241
    • Disclosed herein is an electrolytic copper plating process for electroplating copper on workpieces in a copper sulfate plating bath filled in a plating tank and containing an organic additive while using a soluble anode or insoluble anode as an anode and the workpieces as cathodes, including the steps of, setting a bath current density at not higher than 5 A/L, immersing metal copper in a region of the copper sulfate plating bath, the region being apart from a region between the anode and the cathode and also from regions adjacent the anode and cathode, respectively, such that a neighborhood of the thus-immersed metal copper can be used as an oxidative decomposition region, setting an immersed area of the metal copper at not smaller than 0.001 dm2/L based on the plating bath, and applying air bubbling to the oxidative decomposition region at not lower than 0.01 L/dm2·min based on the immersed area.
    • 本发明公开了一种电解铜电镀工艺,该方法是在使用可溶性阳极或不溶性阳极作为阳极并将工件作为阴极的情况下,在填充于镀槽中的含硫酸铜电镀液中的铜上电镀铜并含有有机添加剂, 设定浴电流密度不高于5A / L,将金属铜浸入硫酸铜电镀槽区域,该区域与阳极和阴极之间的区域以及与阳极和阴极相邻的区域分开 ,使得这样浸入的金属铜的附近可以用作氧化分解区域,基于电镀槽将金属铜的浸渍面积设定为不小于0.001dm 2 / L,并将空气鼓泡 氧化分解区域根据浸渍面积不低于0.01 L / dm2·min。
    • 4. 发明授权
    • Continuous copper electroplating method
    • 连续铜电镀方法
    • US08801912B2
    • 2014-08-12
    • US12401113
    • 2009-03-10
    • Naoyuki OmuraToshihisa IsonoKoji ShimizuShinji TachibanaTomohiro KawaseShunsaku Hoshi
    • Naoyuki OmuraToshihisa IsonoKoji ShimizuShinji TachibanaTomohiro KawaseShunsaku Hoshi
    • C25D21/18C25D17/00C25D3/38H05K3/24
    • C25D17/00C25D3/38C25D7/123C25D17/001C25D17/002C25D21/18H05K3/241
    • Disclosed is a method for a repeated electroplating of a workpiece to be plated as a cathode by using an insoluble anode in a plating vessel accommodating a copper sulfate plating bath, wherein a copper dissolution vessel different from the plating vessel is provided, the plating bath is transferred to the copper dissolution vessel and is returned from the copper dissolution vessel to the plating vessel for circulating the plating bath between the plating vessel and the copper dissolution vessel, copper ion supplying salt is charged into the copper dissolution vessel and dissolved in the plating bath so that copper ions consumed by the plating can be replenished, and the workpiece to be plated is continuously electroplated, characterized in that the plating bath is permitted to transfer between the anode side and the cathode side, and the plating bath is returned to vicinity of the anode in the return of the plating bath from the copper dissolution vessel to the plating vessel. Plating performance impairing components, which are produced when the copper ion supplying salt is dissolved in the plating bath for replenishing the copper ions, are oxidized and decomposed, whereby defective plating due to the presence of the plating performance impairing components can be prevented.
    • 公开了一种通过在容纳硫酸铜电镀浴的电镀槽中使用不溶性阳极来重复电镀作为阴极的工件的方法,其中提供了不同于电镀槽的铜溶解容器,电镀浴是 转移到铜溶解容器中,并从铜溶解容器返回到电镀槽,用于使电镀槽和铜溶解容器之间的电镀槽循环,将铜离子供应盐装入铜溶解容器中并溶解在镀浴中 使得可以补充由电镀消耗的铜离子,并且将被镀工件连续电镀,其特征在于允许电镀液在阳极侧和阴极侧之间转移,电镀浴返回到 阳极将电镀液从铜溶解容器返回到电镀槽中。 当铜离子供应盐溶解在用于补充铜离子的镀浴中时产生的电镀性能损害部件被氧化分解,从而可以防止由于存在电镀性能损害部件而导致的不良电镀。
    • 8. 发明授权
    • Radar device, calibration system and calibration method
    • 雷达装置,校准系统和校准方法
    • US08816900B2
    • 2014-08-26
    • US13467589
    • 2012-05-09
    • Yutaka HasegawaKoji Shimizu
    • Yutaka HasegawaKoji Shimizu
    • G01S13/00G01S7/40
    • G01S13/34G01S3/74G01S7/4026G01S13/42G01S13/48G01S13/931G01S2013/9321G01S2013/9325G01S2013/9346
    • In an environment inspection mode of a calibration system, a radar device executes a signal analysis process to calculate an eigenvalue ratio of each comparison eigenvalue. The eigenvalue ratio has a small value when a pair of eigenvalues corresponding to arrival radar waves has a strong correlation. On the other hand, the eigenvalue ratio has a large value when the eigenvalue ratio is calculated between an eigenvalue and thermal noise. When there is no eigenvalue which is not more than a reference threshold value, the radar device indicates a notice that the current environment is suitable for the calibration of the radar device. On the other hand, when there is presence of at least one eigenvalue of not more than the reference threshold value, the radar device indicates a notice that the current environment is unsuitable for the calibration of the radar device.
    • 在校准系统的环境检查模式中,雷达装置执行信号分析处理,以计算每个比较特征值的特征值比。 当对应于到达雷达波的一对特征值具有很强的相关性时,特征值比率具有小的值。 另一方面,当在特征值和热噪声之间计算特征值比率时,特征值比率具有大的值。 当没有不大于参考阈值的特征值时,雷达装置指示当前环境适合于雷达装置的校准的通知。 另一方面,当存在不超过参考阈值的至少一个特征值时,雷达装置指示当前环境不适合于雷达装置的校准的通知。
    • 9. 发明授权
    • Method for removing an uncured photosensitive composition
    • 去除未固化的光敏组合物的方法
    • US08431333B2
    • 2013-04-30
    • US13243090
    • 2011-09-23
    • Masato KanedaYasuhiro MikawaKoji ShimizuKouichi Terao
    • Masato KanedaYasuhiro MikawaKoji ShimizuKouichi Terao
    • G03F7/30G03F7/32B08B3/00
    • G03F7/168G03F7/0007G03F7/325
    • A photosensitive composition remover used for removal of an uncured photosensitive composition, which remover includes 1 to 80 percent by mass of at least one type of aromatic hydrocarbon having 9 carbon atoms or more within the molecule. The photosensitive composition remover further includes an aprotic polar solvent and/or another solvent other than aprotic polar solvents. The photosensitive composition remover is effective for removal of an uncured photosensitive composition film deposited at the periphery, edges, or back of a substrate or removal of an uncured photosensitive composition deposited at the surface of system members or equipment in a process for forming a photosensitive composition film on a glass substrate, a semiconductor wafer, or the like.
    • 用于去除未固化的光敏组合物的光敏组合物去除剂,该去除剂包括1至80质量%的至少一种在分子内具有9个或更多碳原子的芳族烃。 光敏组合物去除剂还包括非质子极性溶剂和/或非质子极性溶剂以外的其它溶剂。 光敏组合物去除剂对于去除沉积在基材的周边,边缘或背面的未固化光敏组合物薄膜或去除沉积在系统构件或设备的表面上的未固化光敏组合物在用于形成光敏组合物的方法中是有效的 玻璃基板上的薄膜,半导体晶片等。