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1. 发明授权

US4692206A Method for producing a semiconductor laser device having a buried heterostructure 失效
标题翻译：一种具有掩埋异质结构的半导体激光器件的制造方法
公开(公告)号：US4692206A
公开(公告)日：1987-09-08
申请号：US830857
申请日：1986-02-19
申请人： Shinji Kaneiwa , Haruhisa Takiguchi , Toshihiko Yoshida , Sadayoshi Matsui
发明人： Shinji Kaneiwa , Haruhisa Takiguchi , Toshihiko Yoshida , Sadayoshi Matsui
IPC分类号： H01S5/00 , H01S5/22 , H01S5/227 , H01S3/18
CPC分类号： H01S5/227 , H01S5/2206 , H01S5/2275
摘要： A method for producing a semiconductor laser device having a buried heterostructure includes a multi-layered crystal structure, containing an active layer for laser oscillation, on a p-substrate, said multi-layered crystal structure having a striped mesa-portion, a p-n-p multi-layered structure surrounding said mesa-portion and a burying layer disposed on an upper face of said striped mesa-portion. The unique structure results in a heterojunction at each of both side faces of said active layer in said mesa-portion.
摘要翻译：一种具有掩埋异质结构的半导体激光器件的制造方法包括在p型基板上含有激光振荡用活性层的多层结晶结构体，具有条状台面部的多层结晶结构体，pnp多围绕所述台面部分的层状结构以及设置在所述条状台面部分的上表面上的掩埋层。独特的结构在所述台面部分中的所述有源层的两个侧面的每一个处产生异质结。

2. 发明授权

US4997747A Method for the formation of a diffraction grating 失效
$Method for the formation of a diffraction grating$
标题翻译：用于形成衍射光栅的方法
公开(公告)号：US4997747A
公开(公告)日：1991-03-05
申请号：US253811
申请日：1988-10-05
申请人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Sadayoshi Matsui
发明人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Sadayoshi Matsui
IPC分类号： G02B5/18 , G02B5/32 , G02B6/124 , H01S5/00 , H01S5/12
CPC分类号： H01S5/12 , G02B5/1857 , G02B5/32 , G02B6/124 , H01S5/124 , Y10S359/90
摘要： A method for the formation of a diffraction grating on a substrate using a holographic technique and an etching technique, wherein the periodicity of the pattern of the diffraction grating can be changed at will by a change of the light-path length of one of the two light fluxes from a holographic exposing system.

3. 发明授权

US4908831A Buried type semiconductor laser device 失效
公开(公告)号：US4908831A
公开(公告)日：1990-03-13
申请号：US314363
申请日：1989-02-22
申请人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Hiroaki Kudo , Sadayoshi Matsui
发明人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Hiroaki Kudo , Sadayoshi Matsui
IPC分类号： H01S5/00 , H01S5/223 , H01S5/227 , H01S5/24
CPC分类号： H01S5/24 , H01S5/227 , H01S5/0035 , H01S5/2235 , H01S5/2237 , H01S5/2275
摘要： A buried type semiconductor laser device comprising a multi-layered epitaxial growth crystal including a striped laser-oscillation operating area on a semiconductor substrate, wherein said laser-oscillation operating area contains a buffer layer having the same polarity as said substrate, an active layer and a cladding layer having a polarity different from that of said substrate, said laser-oscillation operation area being sandwiched between one part of the burying layer and another part of the burying layer, which are disposed on said substrate and which have a polarity different from that of said substrate, through said substrate or a diffusion region having an impurity with the same polarity as said substrate so as to electrically isolate said burying layer from said cladding layer, thereby maintaining ineffective current flowing from said cladding layer to said burying layer at a low level even when current injected into said device is increased.

4. 发明授权

US4745616A Semiconductor laser device with a diffraction grating 失效
$Semiconductor laser device with a diffraction grating$
标题翻译：具有衍射光栅的半导体激光器件
公开(公告)号：US4745616A
公开(公告)日：1988-05-17
申请号：US830864
申请日：1986-02-19
申请人： Shinji Kaneiwa , Haruhisa Takiguchi , Toshihiko Yoshida , Sadayoshi Matsui
发明人： Shinji Kaneiwa , Haruhisa Takiguchi , Toshihiko Yoshida , Sadayoshi Matsui
IPC分类号： H01S5/00 , H01S5/12 , H01S3/19
CPC分类号： H01S5/12
摘要： A semiconductor laser device comprising a GaAlAs first cladding layer, a Ga.sub.1-x Al.sub.x As (0.ltoreq.x.ltoreq.0.4) active layer for laser oscillation, an In.sub.1-y Ga.sub.y P.sub.1-z As.sub.z (z=2.04y-1.04, and 0.ltoreq.z.ltoreq.1) optical guiding layer with a diffraction grating thereon, a GaAlAs buffer layer disposed between said active layer and said optical guiding layer, and a GaAlAs second cladding layer, the width of the forbidden band of said buffer layer being greater than that of the active layer and smaller than that of the optical guiding layer.
摘要翻译：包括GaAlAs第一包层，用于激光振荡的Ga1-xAlxAs（0≤x≤0.4）有源层，In1-yGayP1-zAsz（z = 2.04y-1.04和0）的半导体激光器件， = z 1）具有衍射光栅的光导层，设置在所述有源层和所述光导层之间的GaAlAs缓冲层和GaAlAs第二包层，所述缓冲层的禁带的宽度更大比活性层的厚度小，而且比光导层的面积小。

5. 发明授权

US4745615A Semiconductor laser device with a diffraction grating 失效
$Semiconductor laser device with a diffraction grating$
标题翻译：具有衍射光栅的半导体激光器件
公开(公告)号：US4745615A
公开(公告)日：1988-05-17
申请号：US789787
申请日：1985-10-21
申请人： Shinji Kaneiwa , Haruhisa Takiguchi , Toshihiko Yoshida , Sadayoshi Matsui
发明人： Shinji Kaneiwa , Haruhisa Takiguchi , Toshihiko Yoshida , Sadayoshi Matsui
IPC分类号： H01S5/00 , H01S5/042 , H01S5/12 , H01S5/32 , H01S5/323 , H01S3/19
CPC分类号： H01S5/32308 , H01S5/12 , H01S5/3211
摘要： A semiconductor laser device for laser oscillation at a wavelength in the range of from 660 nm to 890 nm which includes an active layer of Ga.sub.1-x Al.sub.x As (0.ltoreq.x.ltoreq.0.4) or In.sub.1-y Ga.sub.y P.sub.1-z As.sub.z (0.51.ltoreq.y.ltoreq.1, 0.ltoreq.z.ltoreq.1, and z=2.04y-1.04) and a layer with a diffraction grating thereon of In.sub.1-y Ga.sub.y P.sub.1-z As (z=2.04y-1.04) which is adjacent to the active layer.
摘要翻译：用于在660nm至890nm范围内的波长的激光振荡的半导体激光器件，其包括Ga1-xAlxAs（0≤x≤0.4）或In1-yGayP1-zAsz有效层（0.51 < = y 1 = 0,0 / z = 1，z = 2.04y-1.04）和其上具有In1-yGayP1-zAs（z = 2.04y-1.04）的衍射光栅的层，其相邻到活动层。

6. 发明授权

US4806454A Method for the formation of a diffraction grating 失效
$Method for the formation of a diffraction grating$
标题翻译：用于形成衍射光栅的方法
公开(公告)号：US4806454A
公开(公告)日：1989-02-21
申请号：US65145
申请日：1987-06-24
申请人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Sadayoshi Matsui
发明人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Sadayoshi Matsui
IPC分类号： G02B5/18 , G02B5/32 , G02B6/124 , H01S5/00 , H01S5/12 , G03C5/00
CPC分类号： H01S5/12 , G02B5/1857 , G02B5/32 , G02B6/124 , H01S5/124 , Y10S359/90
摘要： A method for the formation of a diffraction grating on a substrate using a holographic technique and an etching technique, wherein the periodicity of the pattern of the diffraction grating can be changed at will by a change of the light-path length of one of the two light fluxes from a holographic exposing system.
摘要翻译：一种使用全息技术和蚀刻技术在基板上形成衍射光栅的方法，其中衍射光栅的图案的周期可以随意地通过两个中的一个的光路长度的变化而改变来自全息曝光系统的光通量。

7. 发明授权

US4803690A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US4803690A
公开(公告)日：1989-02-07
申请号：US839869
申请日：1986-03-13
申请人： Haruhisa Takiguchi , Shinji Kaneiwa , Toshihiko Yoshida , Sadayoshi Matsui
发明人： Haruhisa Takiguchi , Shinji Kaneiwa , Toshihiko Yoshida , Sadayoshi Matsui
IPC分类号： H01S5/00 , H01S5/12 , H01S3/09 , H01S3/08
CPC分类号： H01S5/12 , H01S5/1215
摘要： A semiconductor laser comprising a triple-layered structure composed of an active layer for laser oscillation and a pair of optical guiding layers sandwiching said active layer therebetween, wherein the refractive index of each of said optical guiding layers is smaller than that of said active layer, and the bandgap of each of said optical guiding layers is greater than that of said active layer, and moreover diffraction gratings with different pitches are positioned on the outer side of each of said optical guiding layers.
摘要翻译：一种半导体激光器，包括由用于激光振荡的有源层组成的三层结构和夹在其间的所述有源层的一对光导层，其中每个所述光导层的折射率小于所述有源层的折射率，并且每个所述光导层的带隙大于所述有源层的带隙，此外，具有不同间距的衍射光栅位于每个所述光导层的外侧。

8. 发明授权

US4799227A Semiconductor laser device having a buried heterostructure 失效
标题翻译：具有掩埋异质结构的半导体激光器件
公开(公告)号：US4799227A
公开(公告)日：1989-01-17
申请号：US066510
申请日：1987-06-26
申请人： Shinji Kaneiwa , Haruhisa Takiguchi , Toshihiko Yoshida , Sadayoshi Matsui
发明人： Shinji Kaneiwa , Haruhisa Takiguchi , Toshihiko Yoshida , Sadayoshi Matsui
IPC分类号： H01S5/00 , H01S5/22 , H01S5/227 , H01S3/19
CPC分类号： H01S5/227 , H01S5/2206 , H01S5/2275
摘要： A semiconductor laser device having a buried heterostructure which includes a multi-layered crystal structure, containing an active layer for laser oscillation, on a substrate, said multi-layered crystal structure having a striped mesa-portion, a multi-layered structure surrounding said mesa-portion and a burying layer disposed on an upper face of said striped mesa-portion. The unique structure results in a heterojunction at each side of the active layer.

9. 发明授权

US4771434A Semiconductor laser device with an integrated light-detecting area 失效
标题翻译：半导体激光器件具有集成的光检测区域
公开(公告)号：US4771434A
公开(公告)日：1988-09-13
申请号：US880167
申请日：1987-06-30
申请人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Sadayoshi Matsui
发明人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Sadayoshi Matsui
IPC分类号： H01S5/00 , H01S5/026 , H01S3/19
CPC分类号： H01S5/0264
摘要： A semiconductor laser apparatus comprising a laser-oscillating area and a light-detecting area, both of which are formed on a single substrate, wherein said laser-oscillating area and said light-detecting area have a common semiconductor layer with a first polarity disposed on said substrate and a common active layer disposed on said semiconductor layer, and said layer-oscillating area of said laser-oscillating area and/or said light-detecting area has a cladding layer with a second polarity disposed on said active layer, said laser-oscillating area and said light-detecting area being separated by a groove formed from the upper face of said cladding layer to the region below said active layer, and the active layer of said laser-oscillation area being flat while the active layer of said light-detecting area is sloped.
摘要翻译：一种半导体激光装置，包括激光振荡区域和光检测区域，两者都形成在单个基板上，其中所述激光振荡区域和所述光检测区域具有第一极性的公共半导体层，所述衬底和设置在所述半导体层上的公共有源层，并且所述激光振荡区域和/或所述光检测区域的所述层振荡区域具有设置在所述有源层上的具有第二极性的包层，振荡区域和所述光检测区域由由所述包覆层的上表面形成的沟槽分隔成所述有源层下方的区域，并且所述激光振荡区域的有源层是平坦的，检测区域倾斜。

10. 发明授权

US4730329A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4730329A
公开(公告)日：1988-03-08
申请号：US869596
申请日：1986-06-02
申请人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Sadayoshi Matsui
发明人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Sadayoshi Matsui
IPC分类号： H01S5/00 , H01S5/062 , H01S5/22 , H01S5/223 , H01S5/227 , H01S5/24 , H01S3/18
CPC分类号： H01S5/227 , H01S5/0035 , H01S5/06213 , H01S5/2206 , H01S5/2237 , H01S5/2275 , H01S5/24
摘要： A semiconductor laser includes a mesa-striped laser structure. A substrate has layered on it an active layer with a refractive index higher than that of, and with an energy gap smaller than that of the substrate. A first electrode is formed under the substrate. A cladding layer of a conductivity type different than that of the substrate overlays the active layer. A multilayered burying crystal includes, at the sides of the mesa-striped laser structure, successively first, second and third burying layers. The first and third burying layers are of the same conductivity type as the substrate. The second burying layer is of a conductivity type different from that of the substrate. A cap layer of a conductivity type different than the substrate covers the upper face of the mesa-striped structure and an upper face of the third burying layer. A second electrode is formed on the cap layer. Injected current flowing into a thyristor composed of the cap layer and the three burying layers can be suppressed.
摘要翻译：半导体激光器包括台面条纹激光器结构。衬底上层叠有折射率高于衬底的能隙的能隙的活性层。第一电极形成在衬底下方。不同于衬底的导电类型的覆层覆盖有源层。多层埋入晶体在台面条纹激光器结构的两侧包括连续的第一，第二和第三掩埋层。第一和第三掩埋层具有与衬底相同的导电类型。第二掩埋层的导电类型与衬底的导电类型不同。不同于衬底的导电类型的覆盖层覆盖台面状结构的上表面和第三掩埋层的上表面。在盖层上形成第二电极。可以抑制流入由盖层和三层埋层构成的晶闸管的注入电流。

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