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    • 2. 发明申请
    • ULTRAVIOLET IRRADIATION APPARATUS
    • 超紫外线辐射装置
    • US20120235059A1
    • 2012-09-20
    • US13421649
    • 2012-03-15
    • Shinji KOBAYASHINorimitsu ABEAkihiko SHIROTANaoto YOSHIZAWATakahiro SOMA
    • Shinji KOBAYASHINorimitsu ABEAkihiko SHIROTANaoto YOSHIZAWATakahiro SOMA
    • C02F1/32
    • C02F1/325C02F1/283C02F1/52C02F1/76C02F2201/3223
    • A ultraviolet irradiation apparatus includes: an ultraviolet-irradiation water tank; a protection pipe provided in the ultraviolet-irradiation water tank; an ultraviolet lamp provided in the protection pipe to be lit up with high-frequency discharge at a frequency of 10 kHz to 10 MHz, inclusive; protection covers respectively provided on the two ends of the ultraviolet-irradiation water tank; an electronic ballast provided in one of the protection covers; and a feeder wire electrically connecting the ultraviolet lamp to the electronic ballast. Each of the ultraviolet-irradiation water tank and the protection covers is made of a conductive material with a specific conductivity and a relative magnetic permittivity whose product is equal to or larger than 1, and has a thickness at least three times as large as a skin depth at a frequency of a high-frequency current that flows through the ultraviolet lamp.
    • 紫外线照射装置包括:紫外线照射水箱; 设置在紫外线照射水箱内的保护管; 设置在保护管内的紫外线灯以10kHz至10MHz的频率以高频放电点亮; 分别设置在紫外线照射水箱两端的防护罩; 设置在所述保护盖之一中的电子镇流器; 以及将紫外线灯电连接到电子镇流器的馈线。 紫外线照射水箱和保护罩中的每一个都由具有等于或大于1的比电导率和相对磁介电常数的导电材料制成,并且具有至少三倍于皮肤的厚度 在穿过紫外线灯的高频电流的频率处的深度。
    • 5. 发明申请
    • ULTRAVIOLET WATER TREATING APPARATUS
    • ULTRAVIOLET水处理设备
    • US20120061585A1
    • 2012-03-15
    • US13231567
    • 2011-09-13
    • Takeshi IDENorimitsu ABESeiichi MURAYAMAShinji KOBAYASHIKenji TAKEUCHITakahiro SOMA
    • Takeshi IDENorimitsu ABESeiichi MURAYAMAShinji KOBAYASHIKenji TAKEUCHITakahiro SOMA
    • C02F1/32
    • C02F1/325C02F2201/3227C02F2201/324C02F2303/04
    • An ultraviolet water treating apparatus according to one embodiment has an ultraviolet irradiation unit, and water inlet and outlet pipes. The unit includes a hollow enclosure with first and second openings in its peripheral wall. Within the enclosure, one or more ultraviolet irradiation devices are provided, which irradiate ultraviolet light onto the water flowing through the enclosure. Also within the enclosure, a cleaning device is provided, which includes a cleaning tool to clean the surface of each protective sleeve, and a driving unit to move the cleaning tool along the protective sleeve. The inlet pipe is in fluid communication with the first opening and flows the water therethrough into the enclosure. The outlet pipe is in fluid communication with the second opening and flows the ultraviolet-irradiated water therethrough out of the enclosure. The inlet and outlet pipes have their central axes intersected with the central axis of the enclosure.
    • 根据一个实施方案的紫外线水处理装置具有紫外线照射单元,以及进水和出水管。 该单元包括在其周围壁上具有第一和第二开口的中空外壳。 在外壳内,提供一个或多个紫外线照射装置,其将紫外线照射到流过外壳的水上。 同样在外壳内,提供了一种清洁装置,其包括清洁每个保护套的表面的清洁工具,以及用于沿着保护套移动清洁工具的驱动单元。 入口管与第一开口流体连通,并将水流入其中。 出口管与第二开口流体连通,并将紫外线照射的水流过外壳。 入口管和出口管的中心轴线与外壳的中心轴线相交。
    • 10. 发明申请
    • THIN FILM REMOVING DEVICE AND THIN FILM REMOVING METHOD
    • 薄膜去除装置和薄膜去除方法
    • US20080105377A1
    • 2008-05-08
    • US11925467
    • 2007-10-26
    • Shinji KOBAYASHINorihisa Koga
    • Shinji KOBAYASHINorihisa Koga
    • B05C11/10
    • H01L21/6708Y10S134/902Y10T156/1111Y10T156/1928Y10T156/1989
    • A thin film removing device and a thin film removing method are capable of removing straight parts of a thin film formed on a square substrate from corners of the substrate, and of suppressing the formation of mists. An approach stage 20 having flat stage plates 23 capable of being disposed substantially flush with the surface of a substrate M mounted on a support table 22 is positioned close to the substrate M mounted on the support table 22. Removing nozzles 30 jet a solvent toward edge parts of the substrate M and suck a solution produced by dissolving part of the resist in the solvent while the removing nozzles 30 are moved along side edges of the substrate M and the approach stage 20 disposed close to the substrate M. Thus, the removing nozzles 30 jet the solvent uniformly over the edge parts and corners of the substrate M and suck the solution without changing modes of jetting the solvent and sucking the solution. Consequently, straight parts of a thin film formed on the square substrate M can be removed from the corners of the substrate M, and the formation of mists can be suppressed.
    • 薄膜去除装置和薄膜去除方法能够从基板的角部去除在正方形基板上形成的薄膜的直线部分,并且抑制雾的形成。 具有能够与安装在支撑台22上的基板M的表面基本上齐平的平坦台板23的接近台20靠近安装在支撑台22上的基板M定位。 去除喷嘴30将溶剂喷射到基板M的边缘部分,并且吸取通过将抗蚀剂的一部分溶解在溶剂中而产生的溶液,同时移除喷嘴30沿着基板M的侧边缘移动,接近台20靠近 因此,除去喷嘴30将溶剂均匀地喷射在基板M的边缘部分和拐角上,并且吸取溶液而不改变喷射溶剂的方式并吸取溶液。 因此,可以从基板M的角部去除在正方形基板M上形成的薄膜的直线部分,并且可以抑制雾的形成。