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    • 2. 发明授权
    • Method for fabricating semiconductor laser
    • 制造半导体激光器的方法
    • US08551797B2
    • 2013-10-08
    • US13597305
    • 2012-08-29
    • Shinji Abe
    • Shinji Abe
    • H01L21/00
    • H01S5/162B82Y20/00H01S5/2063H01S5/2068H01S5/3432
    • A method for fabricating a semiconductor laser includes: sequentially forming a cladding layer of a first conductivity type, an active layer, a cladding layer of a second conductivity type, and a contact layer of the second conductivity type on a semiconductor substrate; forming a promotion film which contacts the contact layer only in a window region proximate an end plane of the semiconductor laser and absorbs group-III atoms from the contact layer to promote generation of group-III vacancies; implanting ions into the contact layer in the window region to damage the contact layer in the window region; and after forming the promotion film and implanting the ions, heat treating so that the group-III vacancies are diffused and the active layer is disordered in the window region and forms a window structure.
    • 一种制造半导体激光器的方法包括:在半导体衬底上依次形成第一导电类型的包覆层,有源层,第二导电类型的包覆层和第二导电类型的接触层; 形成仅在靠近半导体激光器的端面的窗口区域中与接触层接触的促进膜,并从接触层吸收III族原子以促进III族空位的产生; 将离子注入到窗口区域中的接触层中以损坏窗口区域中的接触层; 并且在形成促进膜和注入离子之后,进行热处理,使得III族空位扩散并且活性层在窗口区域中无序并形成窗口结构。
    • 3. 发明授权
    • Method for manufacturing semiconductor optical device
    • 制造半导体光器件的方法
    • US07981704B2
    • 2011-07-19
    • US11868629
    • 2007-10-08
    • Shinji AbeKazushige Kawasaki
    • Shinji AbeKazushige Kawasaki
    • H01L21/00
    • H01S5/22B82Y20/00H01S5/0425H01S5/2009H01S5/2214H01S5/34333
    • After a metal cap layer is laminated on a semiconductor laminated structure, a waveguide ridge is formed, the waveguide ridge is coated with an SiO2 film, and a resist is applied; then, a resist pattern is formed, the resist pattern exposing the surface of the SiO2 film on the top of the waveguide ridge, and burying the SiO2 film in channels with a resist film having a surface higher than the surface of the metal cap layer of the waveguide ridge and lower than the surface of the SiO2 film of the waveguide ridge; the SiO2 film is removed by dry etching, using the resist pattern as a mask. The metal cap layer is removed by wet etching, and a p-GaN layer of the waveguide ridge is exposed to form the electrode layer.
    • 在半导体层叠结构上层压金属盖层之后,形成波导脊,将波导脊涂覆有SiO 2膜,并施加抗蚀剂; 然后,形成抗蚀剂图案,抗蚀剂图案将波导脊的顶部上的SiO 2膜的表面曝光,并且将SiO 2膜在具有比金属盖层的表面高的表面的抗蚀剂膜的通道中埋入 波导脊并且低于波导脊的SiO 2膜的表面; 通过干蚀刻除去SiO 2膜,使用抗蚀剂图案作为掩模。 通过湿蚀刻去除金属盖层,并且暴露波导脊的p-GaN层以形成电极层。