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1. 发明申请

US20130148948A1 HEAT TREATMENT APPARATUS AND METHOD FOR HEATING SUBSTRATE BY LIGHT-IRRADIATION 有权
标题翻译：热处理装置和通过光照射加热底板的方法
公开(公告)号：US20130148948A1
公开(公告)日：2013-06-13
申请号：US13759658
申请日：2013-02-05
申请人： Shinichi KATO
发明人： Shinichi KATO
IPC分类号： F27D11/12
CPC分类号： F27D11/12 , F27D19/00 , F27D99/0006 , H01L21/67115 , H01L21/67248
摘要： A light-emission output of a flash lamp for performing a light-irradiation heat treatment on a substrate in which impurities are implanted is increased up to a target value L1 over a period of time from 1 to 100 milliseconds, is kept for 5 to 100 milliseconds within a fluctuation range of plus or minus 30% from the target value L1, and is then attenuated from the target value L1 to zero over a period of time from 1 to 100 milliseconds. That is, compared with conventional flash lamp annealing, the light-emission output of the flash lamp is increased more gradually, is kept to be constant for a certain period of time, and is then decreased more gradually. As a result, a total heat amount of a surface of the substrate increases compared with the conventional case, but a surface temperature thereof rises more gradually and then drops more gradually compared with the conventional case.
摘要翻译：用于对其中注入杂质的衬底进行光照射热处理的闪光灯的发光输出在1至100毫秒的时间段内增加到目标值L1，保持为5至100 在距离目标值L1的正或负30％的波动范围内的毫秒，然后在1至100毫秒的时间段内从目标值L1衰减到零。也就是说，与传统的闪光灯退火相比，闪光灯的发光输出逐渐增加，保持恒定一段时间，然后逐渐减小。结果，与常规情况相比，基板表面的总热量增加，但是与常规情况相比，表面温度逐渐上升，然后逐渐下降。

2. 发明申请

US20130078802A1 HEAT TREATMENT METHOD FOR GROWING SILICIDE 有权
标题翻译：用于生长硅胶的热处理方法
公开(公告)号：US20130078802A1
公开(公告)日：2013-03-28
申请号：US13606281
申请日：2012-09-07
申请人： Kazuhiko FUSE , Shinichi KATO
发明人： Kazuhiko FUSE , Shinichi KATO
IPC分类号： H01L21/768
CPC分类号： H01L21/28518 , H01L21/2686 , H01L21/67115 , H01L21/67248 , H01L21/68742
摘要： Ions of silicon are implanted into source/drain regions in a semiconductor wafer to amorphize an ion implantation region in the semiconductor wafer. A nickel film is deposited on the amorphized ion implantation region. First irradiation from a flash lamp is performed on the semiconductor wafer with the nickel film deposited thereon to increase the temperature of a front surface of the semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 1 to 20 milliseconds. Subsequently, second irradiation from the flash lamp is performed to maintain the temperature of the front surface of the semiconductor wafer within a ±25° C. range around the target temperature for a time period in the range of 1 to 100 milliseconds. This causes nickel silicide to grow preferentially in a direction perpendicular to the semiconductor wafer.
摘要翻译：将硅的离子注入到半导体晶片中的源极/漏极区域中以使半导体晶片中的离子注入区域非晶化。镍膜沉积在非晶化离子注入区上。在其上沉积有镍膜的半导体晶片上进行来自闪光灯的第一次照射，以将半导体晶片的前表面的温度从预热温度升高到目标温度，持续1至20毫秒的范围。随后，执行从闪光灯的第二次照射，以将半导体晶片的前表面的温度保持在目标温度的±25℃范围内在1至100毫秒范围内的时间段内。这使得硅化镍在垂直于半导体晶片的方向上优先生长。

3. 发明申请

US20110076241A1 TOOTH COATING COMPOSITION 审中-公开
标题翻译：牙科涂料组合物
公开(公告)号：US20110076241A1
公开(公告)日：2011-03-31
申请号：US12887921
申请日：2010-09-22
申请人： Shinichi KATO , Takuya Sato
发明人： Shinichi KATO , Takuya Sato
IPC分类号： A61K8/20 , A61Q11/00
CPC分类号： A61K6/0017 , C08L27/06 , C08L29/04 , C08L23/0853 , C08L33/08 , C08L33/10 , C08L71/02 , C08L93/02 , C08L93/04
摘要： To provide a tooth coating composition capable of maintaining dental caries preventing effects of CPP-ACP, such as recalcification effect and demineralization-inhibiting effect, for a long period of time, a tooth coating composition is made not to contain water, but to include (a) 0.5 to 20% by weight of a casein phosphopeptide-amorphous calcium phosphate complex (CPP-ACP) and/or a casein phosphopeptide-amorphous calcium fluoride phosphate complex (CPP-ACFP), (b) 5 to 70% by weight of a coating film-forming polymer, (c) 5 to 70% by weight of an organic solvent selected so as to contain alcohol, (d) 0.01 to 10% by weight of a fluorine compound, and (e) 0.1 to 20% by weight of a thickener, the tooth coating composition being used by coating on a tooth.
摘要翻译：为了提供能够长期保持防止CPP-ACP的影响的龋齿的牙齿涂层组合物，例如再钙化抑制作用和脱矿质化作用，牙齿涂敷组合物不含水，而是包括（ a）0.5〜20重量％的酪蛋白磷酸肽 - 无定形磷酸钙复合物（CPP-ACP）和/或酪蛋白磷酸肽 - 无定形磷酸氟化钙复合物（CPP-ACFP），（b）5〜70重量％涂料成膜聚合物，（c）5至70重量％的选自含有醇的有机溶剂，（d）0.01至10重量％的氟化合物，和（e）0.1至20重量％增稠剂的重量，牙齿涂层组合物通过涂覆在牙齿上而被使用。

4. 发明申请

US20120244725A1 HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS FOR HEATING SUBSTRATE BY IRRADIATING SUBSTRATE WITH LIGHT 有权
标题翻译：热处理方法和热处理装置通过用光照射基板加热基板
公开(公告)号：US20120244725A1
公开(公告)日：2012-09-27
申请号：US13417498
申请日：2012-03-12
申请人： Kazuhiko FUSE , Shinichi KATO , Kenichi YOKOUCHI
发明人： Kazuhiko FUSE , Shinichi KATO , Kenichi YOKOUCHI
IPC分类号： H01L21/263 , F27B9/36
CPC分类号： H01L21/2253 , F27B17/0025 , H01L21/02694 , H01L21/26513 , H01L21/2686 , H01L21/324 , H01L21/67115 , H01L21/67248 , H01L21/68707 , H01L21/68742
摘要： First irradiation which causes an emission output from a flash lamp to reach its maximum value over a time period in the range of 1 to 20 milliseconds is performed to increase the temperature of a front surface of a semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 1 to 20 milliseconds. This achieves the activation of the impurities. Subsequently, second irradiation which gradually decreases the emission output from the maximum value over a time period in the range of 3 to 50 milliseconds is performed to maintain the temperature of the front surface within a ±25° C. range around the target temperature for a time period in the range of 3 to 50 milliseconds. This prevents the occurrence of process-induced damage while suppressing the diffusion of the impurities.
摘要翻译：执行使闪光灯的发射输出在1至20毫秒的范围内达到其最大值的第一次照射，以将半导体晶片的前表面的温度从预热温度升高到目标温度在1到20毫秒的范围内的时间段。这实现了杂质的活化。随后，进行从3-50毫秒的范围内的最大值的最大值逐渐降低的第二次照射，将前表面的温度保持在目标温度±25℃左右的范围内时间段在3到50毫秒的范围内。这防止了杂质的扩散抑制了工艺引起的损伤的发生。

5. 发明申请

US20100273333A1 HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS FOR HEATING SUBSTRATE BY LIGHT IRRADIATION 有权
标题翻译：热处理加热处理方法及热处理装置
公开(公告)号：US20100273333A1
公开(公告)日：2010-10-28
申请号：US12732591
申请日：2010-03-26
申请人： Shinichi KATO
发明人： Shinichi KATO
IPC分类号： H01L21/26 , F27B5/06
CPC分类号： F27B17/0025 , H01L21/26513 , H01L21/2686 , H01L21/67103 , H01L21/67115 , H01L21/67248 , H01L21/68742 , H01L21/68785 , H01L21/68792
摘要： A semiconductor wafer in which a carbon thin film is formed on a surface of a silicon substrate implanted with impurities is irradiated with flash light emitted from flash lamps. Absorbing the flash light causes the temperature of the carbon thin film to increase. The surface temperature of the silicon substrate implanted with impurities is therefore increased to be higher than that in a case where no thin film is formed, and the sheet resistance value can be thereby decreased. When the semiconductor wafer with the carbon thin film formed thereon is irradiated with flash light in high concentration oxygen atmosphere, since the carbon of the thin film is oxidized to be vaporized, removal of the thin film is performed concurrently with flash heating.
摘要翻译：在其上注入有杂质的硅衬底的表面上形成碳薄膜的半导体晶片被从闪光灯发射的闪光照射。吸收闪光灯会导致碳薄膜的温度升高。因此，注入杂质的硅衬底的表面温度增加到高于不形成薄膜的情况下的表面温度，并且可以降低薄层电阻值。当在其上形成有碳薄膜的半导体晶片用高浓度氧气氛中的闪光照射时，由于薄膜的碳被氧化以汽化，所以与闪光加热同时进行薄膜的去除。

6. 发明申请

US20130078744A1 HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS OF THIN FILM 有权
标题翻译：薄膜热处理方法及热处理装置
公开(公告)号：US20130078744A1
公开(公告)日：2013-03-28
申请号：US13609947
申请日：2012-09-11
申请人： Hiroki KIYAMA , Kazuhiko FUSE , Shinichi KATO
发明人： Hiroki KIYAMA , Kazuhiko FUSE , Shinichi KATO
IPC分类号： H01L21/30 , A21B1/22
CPC分类号： H01L21/2686 , H01L21/02181 , H01L21/0228 , H01L21/02337 , H01L21/02356 , H01L21/67109 , H01L21/67115
摘要： A semiconductor wafer, on the surface of which a silicon dioxide base material and an amorphous silicon thin film are formed in this order, is carried into a chamber. An insulated gate bipolar transistor (IGBT) is connected with a power supply circuit to a flash lamp, and the IGBT makes an energization period to the flash lamp to be 0.01 millisecond or more and 1 millisecond or less, consequently making a flash light irradiation time to be 0.01 millisecond or more and 1 millisecond or less. Since a flash heat treatment is performed with a remarkably short flash light irradiation time, the excessive heating of the thin film of amorphous silicon is suppressed and harmful influence such as the exfoliation of the film is prevented.
摘要翻译：在其表面上依次形成二氧化硅基底材料和非晶硅薄膜的半导体晶片被携带到腔室中。绝缘栅双极晶体管（IGBT）与电源电路连接到闪光灯，并且IGBT使闪光灯的通电周期为0.01毫秒以上且1毫秒以下，从而使闪光灯照射时间为0.01毫秒以上且1毫秒以下。由于以明显短的闪光照射时间进行闪光热处理，因此能够抑制非晶硅薄膜的过度加热，并且防止了膜的剥离等有害影响。

7. 发明申请

US20120263403A1 SLIDING BEARING STRUCTURE FOR A SHAFT MEMBER 有权
标题翻译：滑动轴承组件的滑动轴承结构
公开(公告)号：US20120263403A1
公开(公告)日：2012-10-18
申请号：US13444260
申请日：2012-04-11
申请人： Yuichiro KIMURA , Shinichi KATO , Yasuhiro HIKITA
发明人： Yuichiro KIMURA , Shinichi KATO , Yasuhiro HIKITA
IPC分类号： F16C17/00 , F16C33/74
CPC分类号： F16C17/022 , F16C33/667 , F16C33/74 , F16C37/002 , F16C2202/22
摘要： A sliding bearing structure for a shaft member includes: a shaft member; a bearing member rotates relative to the shaft member; an oil supply space to which lubrication is supplied between sliding surfaces of the shaft member and the bearing member; two annular grooves formed in a circumferential direction in an inner peripheral surface of the bearing member; and two annular seal members formed as separate pieces from the shaft member and the bearing member, and arranged in the annular grooves between the shaft member and the bearing member. Each annular seal member is formed in plural, and is made of material having a thermal expansion coefficient such that an inside diameter of the annular seal member is smaller than an inside diameter of the bearing member at a low temperature, and is the same as or larger than the inside diameter of the bearing member at a high temperature.
摘要翻译：一种用于轴构件的滑动轴承结构包括：轴构件; 轴承构件相对于轴构件旋转; 在轴构件和轴承构件的滑动面之间供给润滑的供油空间; 在所述轴承部件的内周面上沿圆周方向形成的两个环状槽; 以及两个环形密封构件，其形成为与轴构件和轴承构件分离的片，并且布置在轴构件和轴承构件之间的环形槽中。每个环形密封件多个形成，并且由具有热膨胀系数的材料制成，使得环形密封件的内径小于轴承件在低温下的内径，并且与大于轴承构件在高温下的内径。

8. 发明申请

US20090154955A1 IMAGING UNIT AND IMAGE FORMING APPARATUS USING SAME 有权
标题翻译：成像单元和图像形成装置使用相同
公开(公告)号：US20090154955A1
公开(公告)日：2009-06-18
申请号：US12332721
申请日：2008-12-11
申请人： Shinichi KATO
发明人： Shinichi KATO
IPC分类号： G03G15/04
CPC分类号： G03G21/1821 , G03G21/1825
摘要： An electrophotographic imaging unit includes a photoconductor housing, a developer housing, and a support. The photoconductor housing is configured to rotatably support a photoconductor drum. The developer housing is configured to accommodate developer and a developer roller. The support is configured to rotatably support the developer roller at opposite ends thereof. The photoconductor housing and the developer housing are hinged together at one side, and movable relative to each other at another side to open and close the imaging unit to sandwiched the support between the photoconductor housing and the developer housing when the imaging unit is closed.
摘要翻译：电子照相成像单元包括感光体外壳，显影剂外壳和支撑件。光电导体壳体构造成可旋转地支撑感光鼓。显影剂壳体构造成容纳显影剂和显影辊。支撑件构造成在显影辊的相对端处可旋转地支撑显影辊。光电导体壳体和显影剂壳体在一侧铰接在一起，并且在另一侧相对于彼此可移动，以在成像单元关闭时打开和关闭成像单元以夹持光电导体壳体和显影剂壳体之间的支撑。

9. 发明申请

US20180059599A1 SEPARATOR, FIXING DEVICE, AND IMAGE FORMING APPARATUS 审中-公开
公开(公告)号：US20180059599A1
公开(公告)日：2018-03-01
申请号：US15670105
申请日：2017-08-07
申请人： Shinichi KATO , Kenji MAEDA , Hirochika OHNISHI
发明人： Shinichi KATO , Kenji MAEDA , Hirochika OHNISHI
IPC分类号： G03G15/20
CPC分类号： G03G15/2028 , G03G15/2053
摘要： A separator includes a base and a sheet. The base includes a first face to face a medium, a second face being opposite to the first face, and a third face being an end face in a longitudinal direction of the base. The sheet is disposed on a portion of each of the first and second faces that contacts or is adjacent to a rotator. The sheet has a length in a longitudinal direction thereof substantially equal to a length of the base in the longitudinal direction thereof. The sheet includes a projecting portion outboard from the length of the sheet in the longitudinal direction thereof. A combined length of the sheet and the projecting portion in the longitudinal direction of the sheet is greater than the length of the base in the longitudinal direction thereof. The projecting portion is attached to the second and third faces of the base.

10. 发明申请

US20140035223A1 SHEET CONVEYOR AND IMAGE FORMING APPARATUS INCORPORATING SAME 有权
标题翻译：表格输送机和图像形成装置同时进行
公开(公告)号：US20140035223A1
公开(公告)日：2014-02-06
申请号：US13945992
申请日：2013-07-19
申请人： Shinichi KATO
发明人： Shinichi KATO
IPC分类号： B65H85/00
CPC分类号： B65H85/00 , B65H15/00 , B65H29/58 , B65H2301/33312 , B65H2403/422 , B65H2403/53 , B65H2404/63 , B65H2801/09 , G03G15/234 , G03G15/6529 , G03G15/6573 , G03G2215/00438 , G03G2215/00675
摘要： A sheet conveyor included in an image forming apparatus includes a conveying roller rotatable in normal and reverse directions to convey a sheet in opposite sheet conveyance directions, a switching guide rotatable about a support shaft to guide the sheet to a path, a first switchback mechanism performing a first operation of changing a direction of rotation of the conveying roller, a first actuator actuating the first switchback mechanism, a second switchback mechanism performing a second operation of changing a position of the switching guide, a second actuator actuating the second switchback mechanism. The switchback mechanisms and the actuators are configured to be replaceable with a switchback linking mechanism, by employing a linking member, configured to link the first and second operations to be actuated by one actuator of the first and second actuators without changing an arrangement of the one actuator of the first and second actuators.
摘要翻译：包括在图像形成装置中的片材输送机包括可沿正反方向旋转的输送辊，以沿相对的纸张输送方向输送纸张;可绕支撑轴转动以将纸张引导到路径的切换导向器，执行第一转回机构改变传送辊的旋转方向的第一操作，致动第一回转机构的第一致动器，执行改变切换引导件的位置的第二操作的第二回转机构，致动第二回转机构的第二致动器。转向机构和致动器被配置为可以用回转连接机构来替换，通过使用连接构件，该连接构件被构造成将第一和第二操作连接起来以由第一和第二致动器的一个致动器致动而不改变一个第一和第二致动器的致动器。

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