专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US10727396B2 Method for producing composite wafer having oxide single-crystal film 有权
公开(公告)号：US10727396B2
公开(公告)日：2020-07-28
申请号：US15577615
申请日：2016-06-01
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Shoji Akiyama , Makoto Kawai
IPC分类号： H01L21/312 , H01L41/312 , H01L21/02 , H01L21/18 , H01L21/324 , H01L21/265 , H01L21/762 , H01L41/187 , H01L41/335
摘要： Provided is a composite wafer (c-wafer) having an oxide single-crystal film transferred onto a support wafer (s-wafer), the film being a lithium tantalate or lithium niobate film, and c-wafer being unlikely to have cracking or peeling caused in the lamination interface between the film and s-wafer. More specifically, provided is a method of producing c-wafer, including steps of: implanting hydrogen atom ions or molecule ions from a surface of the oxide wafer (o-wafer) to form an ion-implanted layer inside thereof; subjecting at least one of the surface of o-wafer and a surface of s-wafer to surface activation; bonding the surfaces together to obtain a laminate; providing at least one of the surfaces of the laminate with a protection wafer having thermal expansion coefficient smaller than that of o-wafer; and heat-treating the laminate with the protection wafer at 80° C. or higher to split the laminate along the layer to obtain c-wafer.

2. 发明授权

US09425248B2 Composite substrate 有权
标题翻译：复合基材
公开(公告)号：US09425248B2
公开(公告)日：2016-08-23
申请号：US14358923
申请日：2012-12-20
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Shigeru Konishi , Yoshihiro Kubota , Makoto Kawai
IPC分类号： H01L29/02 , H01L21/20 , H01L21/02
CPC分类号： H01L29/02 , H01L21/02002 , H01L21/2007
摘要： Disclosed is a composite substrate, which is provided with an inorganic insulating sintered substrate, which has a heat conductivity of 5 W/m·K or more, and a volume resistivity of 1×108 Ω·cm or more, and a single crystal semiconductor film, or a composite substrate, which is provided with the inorganic insulating sintered substrate, a single crystal semiconductor film, and a thin layer configured of at least one kind of material selected from among an oxide, a nitride, and an oxynitride, said thin layer being provided between the inorganic insulating sintered substrate and the single crystal semiconductor film. According to the present invention, a low-cost composite substrate with suppressed metal impurity contamination can be provided using an inorganic insulating sintered body, which is opaque to visible light, and which has excellent heat conductivity, and furthermore, a small loss in a high frequency region.
摘要翻译：公开了一种复合基板，其具有导热率为5W / m·K以上，体积电阻率为1×10 8Ω·cm以上的无机绝缘性烧结基板，单晶半导体膜或复合基板，其具有无机绝缘烧结基板，单晶半导体膜以及由选自氧化物，氮化物和氮氧化物中的至少一种材料构成的薄层，所述薄膜在无机绝缘烧结基板和单晶半导体膜之间设置有层。根据本发明，可以使用对可见光不透明的无机绝缘烧结体提供具有抑制的金属杂质污染的低成本复合基板，并且具有优异的导热性，此外，高的低损耗复合基板频率区域。

3. 发明申请

US20150262862A1 METHOD FOR PRODUCING NANOCARBON FILM AND NANOCARBON FILM 有权
标题翻译：生产纳米碳膜和纳米碳膜的方法
公开(公告)号：US20150262862A1
公开(公告)日：2015-09-17
申请号：US14435235
申请日：2013-08-07
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Makoto Kawai , Yoshihiro Kubota
IPC分类号： H01L21/762 , H01L21/324 , H01L21/02
CPC分类号： H01L21/76254 , B82Y30/00 , B82Y40/00 , C01B32/15 , C01B32/184 , C01B32/188 , C30B29/02 , C30B29/36 , C30B31/22 , C30B33/06 , H01L21/02043 , H01L21/324
摘要： The present invention relates to a method for producing a nanocarbon film using a hybrid substrate with which a nanocarbon film free from defects can be produced at low cost. This method is characterized in forming an ion implantation region by implanting ion into a single crystal silicon carbide substrate from a surface thereof and after bonding together the surface of the silicon carbide substrate implanted with ion and a surface of a base substrate, releasing the silicon carbide substrate at the ion implanted region to produce a hybrid substrate in which a thin film that includes the single crystal silicon carbide is transferred onto the base substrate, and then heating the hybrid substrate to sublime silicon atoms from the thin film that includes the single crystal silicon carbide so as to obtain the nanocarbon film.
摘要翻译：本发明涉及使用可以以低成本生产无缺陷的纳米碳膜的混合基板的纳米碳膜的制造方法。该方法的特征在于通过从其表面将离子注入到单晶碳化硅衬底中并在将离子和基底表面的碳化硅衬底的表面粘合在一起而形成离子注入区域之后，将碳化硅衬底，以产生其中将包括单晶碳化硅的薄膜转移到基底衬底上的混合衬底，然后加热混合衬底以使来自包括单晶硅的薄膜的硅原子升华碳化物以获得纳米碳膜。

4. 发明授权

US09741603B2 Method for producing hybrid substrate, and hybrid substrate 有权
公开(公告)号：US09741603B2
公开(公告)日：2017-08-22
申请号：US14785724
申请日：2014-04-21
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Yuji Tobisaka , Shoji Akiyama , Yoshihiro Kubota , Makoto Kawai , Kazutoshi Nagata
IPC分类号： H01L21/762 , H01L21/02 , H01L21/304 , H01L21/306 , H01L21/311 , H01L27/12 , H01L29/06
CPC分类号： H01L21/76256 , H01L21/02164 , H01L21/304 , H01L21/30604 , H01L21/31111 , H01L27/1207 , H01L29/0649
摘要： A hybrid substrate has an SOI structure having a good silicon active layer, without defects such as partial separation of the silicon active layer is obtained without trimming the outer periphery of the substrate. An SOI substrate is obtained by sequentially laminating a first silicon oxide film and a silicon active layer in this order on a silicon substrate. A terrace portion that does not have the silicon active layer is formed in the outer peripheral portion of the silicon substrate surface. A second silicon oxide film is formed on the silicon active layer surface of the SOI substrate The bonding surfaces of the SOI substrate and a supporting substrate that has a thermal expansion coefficient different from that of the SOI substrate is subjected to an activation treatment. The SOI substrate and the supporting substrate are bonded with the second silicon oxide film being interposed therebetween.

5. 发明授权

US09379000B2 Method for producing nanocarbon film and nanocarbon film 有权
标题翻译：制造纳米碳膜和纳米碳膜的方法
公开(公告)号：US09379000B2
公开(公告)日：2016-06-28
申请号：US14435235
申请日：2013-08-07
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Makoto Kawai , Yoshihiro Kubota
IPC分类号： H01L21/762 , C01B31/02 , B82Y30/00 , B82Y40/00 , C30B29/02 , C30B29/36 , C30B31/22 , C30B33/06 , H01L21/02 , H01L21/324
CPC分类号： H01L21/76254 , B82Y30/00 , B82Y40/00 , C01B32/15 , C01B32/184 , C01B32/188 , C30B29/02 , C30B29/36 , C30B31/22 , C30B33/06 , H01L21/02043 , H01L21/324
摘要： The present invention relates to a method for producing a nanocarbon film using a hybrid substrate with which a nanocarbon film free from defects can be produced at low cost. This method is characterized in forming an ion implantation region by implanting ion into a single crystal silicon carbide substrate from a surface thereof and after bonding together the surface of the silicon carbide substrate implanted with ion and a surface of a base substrate, releasing the silicon carbide substrate at the ion implanted region to produce a hybrid substrate in which a thin film that includes the single crystal silicon carbide is transferred onto the base substrate, and then heating the hybrid substrate to sublime silicon atoms from the thin film that includes the single crystal silicon carbide so as to obtain the nanocarbon film.
摘要翻译：本发明涉及使用可以以低成本生产无缺陷的纳米碳膜的混合基板的纳米碳膜的制造方法。该方法的特征在于通过从其表面将离子注入到单晶碳化硅衬底中并在将离子和基底表面的碳化硅衬底的表面粘合在一起而形成离子注入区域之后，将碳化硅衬底，以产生其中将包括单晶碳化硅的薄膜转移到基底衬底上的混合衬底，然后加热混合衬底以使来自包括单晶硅的薄膜的硅原子升华碳化物以获得纳米碳膜。

6. 发明申请

US20160071761A1 METHOD FOR PRODUCING HYBRID SUBSTRATE, AND HYBRID SUBSTRATE 有权
标题翻译：生产混合基质的方法和混合基材
公开(公告)号：US20160071761A1
公开(公告)日：2016-03-10
申请号：US14785724
申请日：2014-04-21
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Yuji Tobisaka , Shoji Akiyama , Yoshihiro Kubota , Makoto Kawai , Kazutoshi Nagata
IPC分类号： H01L21/762 , H01L27/12 , H01L21/311 , H01L21/306 , H01L29/06 , H01L21/02 , H01L21/304
CPC分类号： H01L21/76256 , H01L21/02164 , H01L21/304 , H01L21/30604 , H01L21/31111 , H01L27/1207 , H01L29/0649
摘要： A hybrid substrate has an SOI structure having a good silicon active layer, without defects such as partial separation of the silicon active layer is obtained without trimming the outer periphery of the substrate. An SOI substrate is obtained by sequentially laminating a first silicon oxide film and a silicon active layer in this order on a silicon substrate. A terrace portion that does not have the silicon active layer is formed in the outer peripheral portion of the silicon substrate surface. A second silicon oxide film is formed on the silicon active layer surface of the SOI substrate The bonding surfaces of the SOI substrate and a supporting substrate that has a thermal expansion coefficient different from that of the SOI substrate is subjected to an activation treatment. The SOI substrate and the supporting substrate are bonded with the second silicon oxide film being interposed therebetween.
摘要翻译：混合基板具有具有良好的硅有源层的SOI结构，在不修整基板的外周的情况下不会产生诸如硅有源层的部分分离的缺陷。通过在硅衬底上依次层叠第一氧化硅膜和硅有源层来获得SOI衬底。在硅衬底表面的外周部形成有不具有硅有源层的露台部。在SOI衬底的硅有源层表面上形成第二氧化硅膜。对具有与SOI衬底不同的热膨胀系数的SOI衬底和支撑衬底的接合表面进行活化处理。 SOI衬底和支撑衬底与其间插入的第二氧化硅膜接合。

7. 发明授权

US09214380B2 SOS substrate having low surface defect density 有权
标题翻译： SOS衬底具有低表面缺陷密度
公开(公告)号：US09214380B2
公开(公告)日：2015-12-15
申请号：US13946206
申请日：2013-07-19
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Shoji Akiyama , Atsuo Ito , Yuji Tobisaka , Makoto Kawai
IPC分类号： H01L21/30 , H01L21/762 , H01L21/265 , H01L21/268
CPC分类号： H01L21/76254 , H01L21/265 , H01L21/26506 , H01L21/268
摘要： Method of making a bonded SOS substrate with a semiconductor film on or above a sapphire substrate by implanting ions from a surface of the semiconductor substrate to form an ion-implanted layer; activating at least a surface of one of the sapphire substrate and the semiconductor substrate from which the ions have been implanted; bonding the surface of the semiconductor substrate and the surface of the sapphire substrate at a temperature of from 50° C. to 350° C.; heating the bonded substrates at a maximum temperature of from 200° C. to 350° C.; and irradiating visible light from a sapphire substrate side or a semiconductor substrate side to the ion-implanted layer of the semiconductor substrate to make the interface of the ion-implanted layer brittle at a temperature of the bonded body higher than the temperature at which the surfaces were bonded, to transfer the semiconductor film to the sapphire substrate.
摘要翻译：通过从半导体衬底的表面注入离子以形成离子注入层来在蓝宝石衬底上或上方制造具有半导体膜的结合SOS衬底的方法; 激活蓝宝石衬底和离子已被植入的半导体衬底之一的至少一个表面; 将半导体衬底的表面和蓝宝石衬底的表面在50℃至350℃的温度下接合; 在200℃至350℃的最高温度下加热粘合的基材。并将来自蓝宝石衬底侧或半导体衬底侧的可见光照射到半导体衬底的离子注入层，使得离子注入层的界面在接合体的温度下脆性高于表面以将半导体膜转移到蓝宝石衬底。

8. 发明授权

US09214379B2 SOS substrate having low defect density in vicinity of interface 有权
标题翻译：界面附近具有低缺陷密度的SOS衬底
公开(公告)号：US09214379B2
公开(公告)日：2015-12-15
申请号：US13936357
申请日：2013-07-08
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Shoji Akiyama , Atsuo Ito , Yuji Tobisaka , Makoto Kawai
IPC分类号： H01L21/30 , H01L21/762 , H01L21/268
CPC分类号： H01L21/76254 , H01L21/268
摘要： A bonded SOS substrate having a semiconductor film on or above a surface of a sapphire substrate is obtained by a method with the steps of implanting ions from a surface of a semiconductor substrate to form an ion-implanted layer; activating at least a surface from which the ions have been implanted; bonding the surface of the semiconductor substrate and the surface of the sapphire substrate at a temperature of 50° C. to 350° C.; heating the bonded substrates at a maximum temperature from 200° C. to 350° C. to form a bonded body; and irradiating visible light from a sapphire substrate side or a semiconductor substrate side to the ion-implanted layer of the semiconductor substrate for embrittling an interface of the ion-implanted layer, while keeping the bonded body at a temperature higher than the temperature at which the surfaces of the semiconductor substrate and the sapphire substrate were bonded.
摘要翻译：通过以下步骤获得在蓝宝石衬底的表面上或上方具有半导体膜的结合SOS衬底：从半导体衬底的表面注入离子以形成离子注入层的步骤; 至少活化离子已被植入的表面; 将半导体衬底的表面和蓝宝石衬底的表面在50℃至350℃的温度下接合; 在200℃至350℃的最高温度下加热粘合的基材以形成粘合体; 以及将来自蓝宝石衬底侧或半导体衬底侧的可见光照射到所述半导体衬底的离子注入层，以使所述离子注入层的界面脆化，同时将所述接合体保持在高于键合半导体衬底和蓝宝石衬底的表面。

9. 发明申请

US20150108502A1 HEAT DISSIPATION SUBSTRATE AND METHOD FOR PRODUCING SAME 审中-公开
标题翻译：散热基板及其制造方法
公开(公告)号：US20150108502A1
公开(公告)日：2015-04-23
申请号：US14398555
申请日：2013-05-07
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Shoji Akiyama , Yoshihiro Kubota , Makoto Kawai
IPC分类号： H01L23/373 , H01L29/20 , H01L21/18 , H01L29/16
摘要： The present invention relates to a heat dissipation substrate, which is a composite substrate composed of two layers, and which is characterized in that a surface layer (first layer) (1) is configured of single crystal silicon and a handle substrate (second layer) (2) is configured of a material that has a higher thermal conductivity than the first layer. A heat dissipation substrate of the present invention has high heat dissipation properties.
摘要翻译：本发明涉及一种由两层构成的复合基板的散热基板，其特征在于，表层（1）由单晶硅和手柄基板（第二层）构成，（2）由具有比第一层高的导热性的材料构成。本发明的散热基板具有高散热性。

10. 发明授权

US08772132B2 Method of manufacturing laminated wafer by high temperature laminating method 有权
标题翻译：通过高温层压法制造层压晶片的方法
公开(公告)号：US08772132B2
公开(公告)日：2014-07-08
申请号：US13930705
申请日：2013-06-28
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Kouichi Tanaka , Yuji Tobisaka , Yoshihiro Nojima
IPC分类号： H01L21/00
CPC分类号： H01L21/84 , H01L21/76254 , H01L21/76256
摘要： A method of manufacturing a laminated wafer is provided by forming a silicon film layer on a surface of an insulating substrate comprising the steps in the following order of: applying a surface activation treatment to both a surface of a silicon wafer or a silicon wafer to which an oxide film is layered and a surface of the insulating substrate followed by laminating in an atmosphere of temperature exceeding 50° C. and lower than 300° C., applying a heat treatment to a laminated wafer at a temperature of 200° C. to 350° C., and thinning the silicon wafer by a combination of grinding, etching and polishing to form a silicon film layer.
摘要翻译：通过在绝缘基板的表面上形成硅膜层来提供层压晶片的制造方法，该方法包括以下顺序的步骤：对硅晶片或硅晶片的表面进行表面活化处理，层叠氧化膜和绝缘基板的表面，然后在超过50℃且低于300℃的气氛中层压，在200℃的温度下对层压晶片进行热处理，并且通过研磨，蚀刻和抛光的组合使硅晶片变薄以形成硅膜层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式