会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Electro-optical device and electronic apparatus
    • 电光装置和电子设备
    • US07759757B2
    • 2010-07-20
    • US12314658
    • 2008-12-15
    • Shin KoideHiroko MuramatsuShin Fujita
    • Shin KoideHiroko MuramatsuShin Fujita
    • H01L33/00
    • G02F1/13318G02F1/1362
    • An electro-optical device includes an insulating substrate, a switching element, at least one PIN diode, and at least one reflector. The switching element includes a first polysilicon semiconductor layer formed on the insulating substrate, and a gate electrode formed between the insulating substrate and the first semiconductor layer. Each of the at least one PIN diode includes a second polysilicon semiconductor layer formed on the insulating substrate. The at least one reflector is formed in the same layer as the gate electrode and opposite the second semiconductor layer or layers of the at least one PIN diode.
    • 电光装置包括绝缘基板,开关元件,至少一个PIN二极管和至少一个反射器。 开关元件包括形成在绝缘基板上的第一多晶硅半导体层和形成在绝缘基板和第一半导体层之间的栅电极。 所述至少一个PIN二极管中的每一个包括形成在所述绝缘基板上的第二多晶硅半导体层。 所述至少一个反射器形成在与所述栅电极相同的层中,并且与所述至少一个PIN二极管的所述第二半导体层相对。
    • 5. 发明授权
    • Electro-optical device and electronic apparatus
    • 电光装置和电子设备
    • US07498649B2
    • 2009-03-03
    • US11708534
    • 2007-02-21
    • Shin KoideHiroko MuramatsuShin Fujita
    • Shin KoideHiroko MuramatsuShin Fujita
    • H01L33/00
    • G02F1/13318G02F1/1362
    • An electro-optical device includes an insulating substrate, a switching element, at least one PIN diode, and at least one reflector. The switching element includes a first polysilicon semiconductor layer formed on the insulating substrate, and a gate electrode formed between the insulating substrate and the first semiconductor layer. Each of the at least one PIN diode includes a second polysilicon semiconductor layer formed on the insulating substrate. The at least one reflector is formed in the same layer as the gate electrode and opposite the second semiconductor layer or layers of the at least one PIN diode.
    • 电光装置包括绝缘基板,开关元件,至少一个PIN二极管和至少一个反射器。 开关元件包括形成在绝缘基板上的第一多晶硅半导体层和形成在绝缘基板和第一半导体层之间的栅电极。 所述至少一个PIN二极管中的每一个包括形成在所述绝缘基板上的第二多晶硅半导体层。 所述至少一个反射器形成在与所述栅电极相同的层中,并且与所述至少一个PIN二极管的所述第二半导体层相对。