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    • 1. 发明授权
    • Hot press mold, temperature measuring device, and hot press molding method
    • 热压模具,温度测量装置和热压成型法
    • US09302306B2
    • 2016-04-05
    • US13508193
    • 2009-11-09
    • Shin'ichiroh MatsumotoKatsuro GotoShinji IshiiTakefumi SuzukiTakahiro Yoshihara
    • Shin'ichiroh MatsumotoKatsuro GotoShinji IshiiTakefumi SuzukiTakahiro Yoshihara
    • B21D22/00B21D22/21B21D37/16G01K1/14G01K1/16B21D22/20
    • B21D22/208B21D22/20B21D22/21B21D37/16G01K1/14G01K1/16
    • Provided is a technique which can, in order to guarantee the molding accuracy of hot press molding, accurately measure the temperature of a workpiece being subjected to the hot press molding. A hot press mold is a mold used for hot press molding for hardening and molding a workpiece, which has been heated, by pressing the workpiece. The hot press mold is provided with a stroke type temperature measuring device which is extended and retracted by a pressing force applied thereto through the workpiece. The temperature measuring device is provided in such a manner that the temperature measuring device protrudes outward from the molding surface of the mold, and when subjected to the pressing force applied through the workpiece while being in contact with the workpiece, the temperature measuring device shortens in length and retracts into the mold. It is preferable that the temperature measuring device is provided with a first elastic member and a second elastic member which shorten in length when subjected to the pressing force applied through the workpiece, and that the temperature measuring device is extended and retracted in two stages by means of the first elastic member and the second elastic member.
    • 提供了为了确保热压成型的成型精度,能够精确地测定经受热压成型的工件的温度的技术。 热压模具是用于对通过按压工件加热的工件进行硬化和成型的热压成型用的模具。 热压模具设有行程式温度测量装置,该冲程型温度测量装置通过通过工件施加到其上的按压力而延伸和缩回。 温度测量装置以使得温度测量装置从模具的模制表面向外突出的方式设置,并且当受到与工件接触的工件施加的压力时,温度测量装置缩短 长度并缩回到模具中。 优选地,温度测量装置设置有第一弹性构件和第二弹性构件,当经受通过工件施加的按压力时,第二弹性构件和第二弹性构件在长度上缩短,并且温度测量装置通过装置两级延伸和缩回 的第一弹性构件和第二弹性构件。
    • 2. 发明申请
    • HOT PRESS MOLD, TEMPERATURE MEASURING DEVICE, AND HOT PRESS MOLDING METHOD
    • 热压模具,温度测量装置和热压成型方法
    • US20120234069A1
    • 2012-09-20
    • US13508193
    • 2009-11-09
    • Shin'ichiroh MatsumotoKatsuro GotoShinji IshiiTakefumi SuzukiTakahiro Yoshihara
    • Shin'ichiroh MatsumotoKatsuro GotoShinji IshiiTakefumi SuzukiTakahiro Yoshihara
    • B21D37/16
    • B21D22/208B21D22/20B21D22/21B21D37/16G01K1/14G01K1/16
    • Provided is a technique which can, in order to guarantee the molding accuracy of hot press molding, accurately measure the temperature of a workpiece being subjected to the hot press molding. A hot press mold is a mold used for hot press molding for hardening and molding a workpiece, which has been heated, by pressing the workpiece. The hot press mold is provided with a stroke type temperature measuring device which is extended and retracted by a pressing force applied thereto through the workpiece. The temperature measuring device is provided in such a manner that the temperature measuring device protrudes outward from the molding surface of the mold, and when subjected to the pressing force applied through the workpiece while being in contact with the workpiece, the temperature measuring device shortens in length and retracts into the mold. It is preferable that the temperature measuring device is provided with a first elastic member and a second elastic member which shorten in length when subjected to the pressing force applied through the workpiece, and that the temperature measuring device is extended and retracted in two stages by means of the first elastic member and the second elastic member.
    • 提供了为了确保热压成型的成型精度,能够精确地测定经受热压成型的工件的温度的技术。 热压模具是用于对通过按压工件加热的工件进行硬化和成型的热压成型用的模具。 热压模具设有行程式温度测量装置,该冲程型温度测量装置通过通过工件施加到其上的按压力而延伸和缩回。 温度测量装置以使得温度测量装置从模具的模制表面向外突出的方式设置,并且当受到与工件接触的工件施加的压力时,温度测量装置缩短 长度并缩回到模具中。 优选地,温度测量装置设置有第一弹性构件和第二弹性构件,当经受通过工件施加的按压力时,第二弹性构件和第二弹性构件在长度上缩短,并且温度测量装置通过装置两级延伸和缩回 的第一弹性构件和第二弹性构件。
    • 4. 发明授权
    • Chamfer processing method and device for plate material
    • 倒角加工方法和板材装置
    • US07033255B2
    • 2006-04-25
    • US10446118
    • 2003-05-28
    • Kazuyuki HosoeTakefumi Suzuki
    • Kazuyuki HosoeTakefumi Suzuki
    • B24B1/00
    • F16G5/16B24B9/00B24B19/26B24B21/002B24B47/04
    • Chamfer processing is carried out by making plate material W end faces come in contact with rotating grinding belts. The grinding surfaces of the opposing side by side grinding belts are on the centerline in the thickness direction of the plate material. The center point is considered the pivot point as seen from the plate material end faces and in distance is smaller than the thickness of the plate material. Pivot motion of the plate material is carried out in the rotating direction of grinding belts. This chamfer processing method and device enables chamfer in a small curvature radius without applying a heavy tension load on grinding belts, and performs uniform deep chamfer processing of multiple plate material simultaneously.
    • 通过使板材W端面与旋转的研磨带接触来进行倒角加工。 相对的并排研磨带的磨削表面在板材的厚度方向上的中心线上。 中心点被认为是从板材端面看的枢轴点,距离小于板材的厚度。 板材的枢轴运动沿研磨带的旋转方向进行。 这种倒角加工方法和装置能够在小的曲率半径上进行倒角,而不会在研磨带上施加重的张力,同时对多个板材进行均匀的深倒角加工。
    • 5. 发明授权
    • Peripheral length correction device of metal rings
    • 金属环外围长度校正装置
    • US06949013B1
    • 2005-09-27
    • US10644729
    • 2003-08-21
    • Takefumi Suzuki
    • Takefumi Suzuki
    • F16G5/16B21B5/00B21B45/02B21D1/02B21D45/06B21D53/14B24B7/00A47L5/38
    • B21D45/06B21B5/00B21B45/0287B21D53/14
    • In the peripheral length correction device of metal rings, a metal ring is laid on a driving roller and a driven roller which are displaceable in mutually separating directions. One or both of the rollers are displaced while rotating the rollers, thereby applying tensile stress to the metal ring to correct the peripheral length thereof. The peripheral length correction device of metal rings further comprises a foreign substance removal head, which functions as the removal means for removing foreign substances adhered to the inner peripheral surface of the metal ring, and as the re-adhesion prevention means for preventing re-adhesion of the foreign substances removed by the removal means from the metal ring. There is provided a peripheral length correction device of metal rings which can prevent the reduction in production yield without damaging the rollers even if foreign substances (residual pieces of cutting metal or the like) adhere to the surface of the metal ring in a preceding process (solution treatment or the like) prior to the correction process.
    • 在金属环的圆周长度校正装置中,将金属环放置在驱动辊和从动辊上,该驱动辊和从动辊可以在相互分离的方向上移动。 一个或两个辊在旋转辊的同时移位,从而对金属环施加拉伸应力以校正其周长。 金属环的圆周长度校正装置还包括异物去除头,其用作去除附着在金属环的内周面上的异物的去除装置,以及用作防止再附着的再粘合防止装置 的去除装置从金属环去除的异物。 提供了金属环的周长校正装置,即使在前一过程中异物(切割金属等的残留部分)附着在金属环的表面上时,也可以防止生产量的降低而不损坏辊 溶液处理等)。
    • 7. 发明授权
    • Etching gas and etching method
    • 蚀刻气体和蚀刻方法
    • US09368363B2
    • 2016-06-14
    • US14005483
    • 2012-03-14
    • Takefumi Suzuki
    • Takefumi Suzuki
    • H01L21/302H01L21/3065H01L21/311
    • H01L21/3065H01L21/31116H01L21/31138
    • The present invention is a plasma etching gas comprising a fluorocarbon having 3 or 4 carbon atoms, the fluorocarbon including at least one unsaturated bond and/or ether linkage, and including a bromine atom, and a plasma etching method comprising subjecting a silicon oxide film on a substrate to plasma etching through a mask using a process gas, the process gas being the plasma etching gas. This plasma etching gas exhibits excellent etching selectivity, and has a short atmospheric lifetime and a low environmental impact. This plasma etching method makes it possible to selectively subject a silicon oxide film to plasma etching at a high etching rate without causing an increase in surface roughness.
    • 本发明是一种等离子体蚀刻气体,其包括碳原子数为3或4的碳氟化合物,所述碳氟化合物包括至少一个不饱和键和/或醚键,并且包括溴原子,以及等离子体蚀刻方法,包括使氧化硅膜 用于使用处理气体等离子体蚀刻通过掩模的衬底,所述工艺气体是等离子体蚀刻气体。 这种等离子体蚀刻气体表现出优异的蚀刻选择性,并且具有短的大气寿命和低的环境影响。 这种等离子体蚀刻方法使得可以以高蚀刻速率选择性地使氧化硅膜进行等离子体蚀刻,而不会导致表面粗糙度的增加。
    • 8. 发明申请
    • PLASMA ETCHING METHOD
    • 等离子体蚀刻法
    • US20110068086A1
    • 2011-03-24
    • US12736241
    • 2009-03-27
    • Takefumi SuzukiAzumi Ito
    • Takefumi SuzukiAzumi Ito
    • C03C25/68
    • H01L21/31116
    • A plasma etching method includes etching an etching target under plasma conditions using a process gas, the process gas including a saturated fluorohydrocarbon shown by the formula (1): CxHyFz, wherein x is 3, 4, or 5, and y and z are individually positive integers, provided that y>z is satisfied. When etching a silicon nitride film that covers a silicon oxide film formed on the etching target, the silicon nitride film can be selectivity etched as compared with the silicon oxide film by utilizing the process gas including the specific fluorohydrocarbon under the plasma conditions.
    • 等离子体蚀刻方法包括使用处理气体在等离子体条件下蚀刻蚀刻靶,所述工艺气体包括由式(1)表示的饱和氟代烃:C x H y F z,其中x为3,4或5,y和z分别为 正整数,条件是满足y> z。 当蚀刻覆盖形成在蚀刻靶上的氧化硅膜的氮化硅膜时,与氧化硅膜相比,在等离子体条件下利用含有特定氟代烃的工艺气体,可以选择性地蚀刻氮化硅膜。