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1. 发明申请

US20090031262A1 MASK PATTERN FORMATION METHOD, MASK PATTERN FORMATION APPARATUS, AND LITHOGRAPHY MASK 审中-公开
标题翻译：掩模图案形成方法，掩模图案形成装置和平铺掩模
公开(公告)号：US20090031262A1
公开(公告)日：2009-01-29
申请号：US12179735
申请日：2008-07-25
申请人： Shimon Maeda , Suigen Kyoh , Soichi Inoue
发明人： Shimon Maeda , Suigen Kyoh , Soichi Inoue
IPC分类号： G06F17/50
CPC分类号： G06F17/5068
摘要： A mask pattern formation method and apparatus capable of performing OPC and lithography verification and obtaining OPC result, and a lithography mask are provided. The method of forming a mask pattern from a design layout of a semiconductor integrated circuit comprises inputting a design layout, performing first OPC on the design layout, calculating a first evaluation value for a finished planar shape of a resist pattern corresponding to the design layout based on the first OPC, determining whether the first evaluation value satisfies a predetermined value, if the first evaluation value does not satisfy the predetermined value, locally altering the design layout, performing second OPC on the altered design layout, calculating a second evaluation value for the altered design layout, performing second determination, and if the second evaluation value satisfies the predetermined value, outputting the result of OPC and the first and second evaluation values.
摘要翻译：提供了能够执行OPC和光刻验证并获得OPC结果的掩模图案形成方法和装置，以及光刻掩模。从半导体集成电路的设计布局形成掩模图案的方法包括输入设计布局，在设计布局上执行第一OPC，计算与设计布局相对应的抗蚀剂图案的成品平面形状的第一评估值在第一OPC上，确定第一评估值是否满足预定值，如果第一评估值不满足预定值，则局部改变设计布局，在改变的设计布局上执行第二OPC，计算第二评估值改变设计布局，执行第二确定，以及如果第二评估值满足预定值，则输出OPC的结果以及第一和第二评估值。

2. 发明申请

US20100067777A1 EVALUATION PATTERN GENERATING METHOD, COMPUTER PROGRAM PRODUCT, AND PATTERN VERIFYING METHOD 审中-公开
标题翻译：评估模式生成方法，计算机程序产品和模式验证方法
公开(公告)号：US20100067777A1
公开(公告)日：2010-03-18
申请号：US12536900
申请日：2009-08-06
申请人： Katsuyoshi Kodera , Satoshi Tanaka , Shimon Maeda , Suigen Kyoh , Soichi Inoue , Ryuji Ogawa
发明人： Katsuyoshi Kodera , Satoshi Tanaka , Shimon Maeda , Suigen Kyoh , Soichi Inoue , Ryuji Ogawa
IPC分类号： G06K9/00
CPC分类号： G03F1/44 , G03F1/36
摘要： An evaluation pattern generating method including dividing a peripheral area of an evaluation target pattern into a plurality of meshes; calculating an image intensity of a circuit pattern when the evaluation target pattern is transferred onto a wafer by a lithography process in a case where a mask function value is given to a predetermined mesh; calculating a mask function value of the mesh so that a cost function of the image intensity, in which an optical image characteristic amount that affects a transfer performance of the evaluation target pattern to the wafer is set to the image intensity, satisfies a predetermined reference when evaluating a lithography performance of the evaluation target pattern; and generating an evaluation pattern corresponding to the mask function value.
摘要翻译： 1.一种评价图案生成方法，包括将评价对象图案的周边区域划分为多个网格; 当将掩模函数值赋予预定网格时，通过光刻处理将评估对象图案转印到晶片上时，计算电路图案的图像强度; 计算网格的掩码函数值，使得影响评估对象图案对晶片的转印性能的光学图像特征量被设置为图像强度的图像强度的成本函数满足预定参考，当评估目标模式的光刻性能评估; 以及生成与所述掩模功能值对应的评估图案。

3. 发明申请

US20090037852A1 PATTERN DATA GENERATION METHOD AND PATTERN DATA GENERATION PROGRAM 有权
标题翻译：模式数据生成方法和模式数据生成程序
公开(公告)号：US20090037852A1
公开(公告)日：2009-02-05
申请号：US12180244
申请日：2008-07-25
申请人： Sachiko KOBAYASHI , Suigen Kyoh , Shimon Maeda
发明人： Sachiko KOBAYASHI , Suigen Kyoh , Shimon Maeda
IPC分类号： G06F17/50
CPC分类号： G06F17/5081
摘要： A pattern data generation method of an aspect of the present invention, the method includes creating at least one modification guide to modify a modification target point contained in pattern data, evaluating the modification guides on the basis of an evaluation item, the evaluation item being a change in the shape of the pattern data for the modification target point caused by the modification based on the modification guides or a change in electric characteristics of a pattern formed in accordance with the pattern data, selecting a predetermined modification guide from among the modification guides on the basis of the evaluation result of the modification guides, and modifying the modification target point in accordance with the selected modification guide.
摘要翻译：本发明的一个方式的图形数据生成方法，该方法包括创建至少一个修改指南，以修改包含在图案数据中的修改目标点，基于评估项目评估修改指南，评估项目是基于修改引导引起的修改目标点的图案数据的形状的改变或根据图案数据形成的图案的电特性的变化，从修改引导件中选择预定的修改指南修改指南的评估结果的基础，以及根据所选择的修改指南修改修改目标点。

4. 发明授权

US08234596B2 Pattern data creating method, pattern data creating program, and semiconductor device manufacturing method 有权
标题翻译：图案数据创建方法，图案数据创建程序和半导体器件制造方法
公开(公告)号：US08234596B2
公开(公告)日：2012-07-31
申请号：US12552010
申请日：2009-09-01
申请人： Ryuji Ogawa , Masahiro Miyairi , Shimon Maeda , Suigen Kyoh , Satoshi Tanaka
发明人： Ryuji Ogawa , Masahiro Miyairi , Shimon Maeda , Suigen Kyoh , Satoshi Tanaka
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： A pattern data creating method according to an embodiment of the present invention comprises: extracting marginal error patterns using a first result obtained by applying process simulation to mask pattern data based on an evaluation target cell pattern, applying the process simulation to mask pattern data based on an evaluation target cell pattern with peripheral environment pattern created by arranging a peripheral environment pattern in the marginal error patterns such that a second result obtained by creating mask pattern data and applying the process simulation to the mask pattern data is more deteriorated than the first result, and correcting the evaluation target cell pattern or the mask pattern data based on the evaluation target cell pattern when there is a fatal error.
摘要翻译：根据本发明的实施例的图形数据创建方法包括：使用通过应用过程模拟获得的第一结果来提取边缘误差模式以基于评估目标单元图案来屏蔽图案数据，将过程模拟应用于基于通过将周边环境图案布置在边缘误差图案中，使得通过创建掩模图案数据获得的第二结果和对掩模图案数据应用处理模拟而得到的第一结果比第一结果更差，从而产生具有周边环境图案的评估对象单元图案，以及当存在致命错误时，基于评估对象单元图案来校正评估对象单元格图案或掩模图案数据。

5. 发明申请

US20100081294A1 PATTERN DATA CREATING METHOD, PATTERN DATA CREATING PROGRAM, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：图形数据创建方法，图形数据创建程序和半导体器件制造方法
公开(公告)号：US20100081294A1
公开(公告)日：2010-04-01
申请号：US12552010
申请日：2009-09-01
申请人： Ryuji OGAWA , Masahiro Miyairi , Shimon Maeda , Suigen Kyoh , Satoshi Tanaka
发明人： Ryuji OGAWA , Masahiro Miyairi , Shimon Maeda , Suigen Kyoh , Satoshi Tanaka
IPC分类号： H01L21/027 , G06F17/50
CPC分类号： G03F1/36
摘要： A pattern data creating method according to an embodiment of the present invention comprises: extracting marginal error patterns using a first result obtained by applying process simulation to mask pattern data based on an evaluation target cell pattern, applying the process simulation to mask pattern data based on an evaluation target cell pattern with peripheral environment pattern created by arranging a peripheral environment pattern in the marginal error patterns such that a second result obtained by creating mask pattern data and applying the process simulation to the mask pattern data is more deteriorated than the first result, and correcting the evaluation target cell pattern or the mask pattern data based on the evaluation target cell pattern when there is a fatal error.
摘要翻译：根据本发明的实施例的图形数据创建方法包括：使用通过应用过程模拟获得的第一结果来提取边缘误差模式以基于评估目标单元图案来屏蔽图案数据，将过程模拟应用于基于通过将周边环境图案布置在边缘误差图案中，使得通过创建掩模图案数据获得的第二结果和对掩模图案数据应用处理模拟而得到的第一结果比第一结果更差，从而产生具有周边环境图案的评估对象单元图案，以及当存在致命错误时，基于评估对象单元图案来校正评估对象单元格图案或掩模图案数据。

6. 发明申请

US20090199148A1 Pattern-producing method for semiconductor device 有权
公开(公告)号：US20090199148A1
公开(公告)日：2009-08-06
申请号：US12385454
申请日：2009-04-08
申请人： Suigen Kyoh , Toshiya Kotani , Soichi Inoue
发明人： Suigen Kyoh , Toshiya Kotani , Soichi Inoue
IPC分类号： G06F17/50
CPC分类号： G03F1/36 , G03F7/70441
摘要： Disclosed is a method of producing a pattern for a semiconductor device, comprising extracting part of a pattern layout, perturbing a pattern included in the part of the pattern layout to generate a perturbation pattern, correcting the perturbation pattern, predicting a first pattern, to be formed on a wafer, from the corrected perturbation pattern, acquiring a first difference between the perturbation pattern and the first pattern, and storing information concerning the perturbation pattern including information concerning the first difference.

7. 发明授权

US07917871B2 Method and program for pattern data generation using a modification guide 有权
标题翻译：使用修改指南生成图形数据的方法和程序
公开(公告)号：US07917871B2
公开(公告)日：2011-03-29
申请号：US12180244
申请日：2008-07-25
申请人： Sachiko Kobayashi , Suigen Kyoh , Shimon Maeda
发明人： Sachiko Kobayashi , Suigen Kyoh , Shimon Maeda
IPC分类号： G06F17/50
CPC分类号： G06F17/5081
摘要： A pattern data generation method of an aspect of the present invention, the method includes creating at least one modification guide to modify a modification target point contained in pattern data, evaluating the modification guides on the basis of an evaluation item, the evaluation item being a change in the shape of the pattern data for the modification target point caused by the modification based on the modification guides or a change in electric characteristics of a pattern formed in accordance with the pattern data, selecting a predetermined modification guide from among the modification guides on the basis of the evaluation result of the modification guides, and modifying the modification target point in accordance with the selected modification guide.
摘要翻译：本发明的一个方式的图形数据生成方法，该方法包括创建至少一个修改指南，以修改包含在图案数据中的修改目标点，基于评估项目评估修改指南，评估项目是基于修改引导引起的修改目标点的图案数据的形状的改变或根据图案数据形成的图案的电特性的变化，从修改引导件中选择预定的修改指南修改指南的评估结果的基础，以及根据所选择的修改指南修改修改目标点。

8. 发明授权

US07966584B2 Pattern-producing method for semiconductor device 有权
标题翻译：半导体器件的图案制作方法
公开(公告)号：US07966584B2
公开(公告)日：2011-06-21
申请号：US12385454
申请日：2009-04-08
申请人： Suigen Kyoh , Toshiya Kotani , Soichi Inoue
发明人： Suigen Kyoh , Toshiya Kotani , Soichi Inoue
IPC分类号： G06F17/50
CPC分类号： G03F1/36 , G03F7/70441
摘要： Disclosed is a method of producing a pattern for a semiconductor device, comprising extracting part of a pattern layout, perturbing a pattern included in the part of the pattern layout to generate a perturbation pattern, correcting the perturbation pattern, predicting a first pattern, to be formed on a wafer, from the corrected perturbation pattern, acquiring a first difference between the perturbation pattern and the first pattern, and storing information concerning the perturbation pattern including information concerning the first difference.
摘要翻译：公开了一种制造用于半导体器件的图案的方法，包括提取图案布局的一部分，扰乱包含在图案布局部分中的图案以产生扰动图案，校正扰动图案，预测第一图案，为形成在晶片上，从校正的扰动图案获取扰动图案和第一图案之间的第一个差异，以及存储关于包含关于第一个差异的信息的扰动图案的信息。

9. 发明授权

US07029799B2 Exposure method for forming pattern for IC chips on reticle by use of master masks 有权
公开(公告)号：US07029799B2
公开(公告)日：2006-04-18
申请号：US10118050
申请日：2002-04-09
申请人： Suigen Kyoh , Soichi Inoue
发明人： Suigen Kyoh , Soichi Inoue
IPC分类号： G03F1/00 , G03C5/00
CPC分类号： G03F7/70466 , G03F1/00 , G03F1/50
摘要： There is provided a method which forms master masks used when a pattern of size larger than a region which can be exposed at one time is exposed on a to-be-exposed object. The pattern of the size larger than the region which can be exposed at one time is divided into a region of low repetitiveness and a region of high repetitiveness. A pattern of the region of low repetitiveness is drawn on at least one first master mask. Further, a pattern of the region of high repetitiveness is drawn on at least one second master mask.

10. 发明申请

US20050025351A1 Method for inspecting a defect in a photomask, method for manufacturing a semiconductor device and method for producing a photomask 失效
标题翻译：用于检查光掩模中的缺陷的方法，用于制造半导体器件的方法和用于制造光掩模的方法
公开(公告)号：US20050025351A1
公开(公告)日：2005-02-03
申请号：US10878384
申请日：2004-06-29
申请人： Toshiya Kotani , Suigen Kyoh , Shinji Yamaguchi , Soichi Inoue
发明人： Toshiya Kotani , Suigen Kyoh , Shinji Yamaguchi , Soichi Inoue
IPC分类号： G03F1/20 , G03F1/84 , G03F1/86 , G06K9/00 , G06T7/00 , H01L21/027
CPC分类号： G03F1/84 , G06T7/001 , G06T2207/30148
摘要： There is disclosed a method for inspecting a defect in a photomask which is produced by using a graphic data, that matches mask data or is produced by subjecting mask data to correction of a process conversion difference relating to at least a line width. The method includes the following steps. Inspection data is produced by correcting a pattern of mask data so as to substantially match a planar shape of a pattern of a photomask to be produced by using the graphic data. A pattern of a produced photomask is compared with a pattern of the inspection data. Portions where planar shapes of the pattern of the inspection data and the pattern of the produced photomask do not match are extracted. A defect is distinguished from the portions where the planer shapes do not match.
摘要翻译：公开了一种用于检查光掩模中的缺陷的方法，其通过使用匹配掩模数据的图形数据或通过对掩模数据进行校正至少与线宽相关的处理转换差来产生。该方法包括以下步骤。通过校正掩模数据的图案以便通过使用图形数据基本上匹配要产生的光掩模的图案的平面形状来产生检查数据。将生成的光掩模的图案与检查数据的图案进行比较。提取检查数据的图案的平面形状和所生成的光掩模的图案不匹配的部分。缺陷与刨床形状不匹配的部分不同。

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